Determination of the weldability and elevated temperature stability of refractory metal alloys seventh quarterly report, dec. 21, 1964 - mar. 20, 1965
Weldability and elevated temperature stability of refractory metal alloys
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Weldability and elevated temperature stability of refractory metal alloys
Planetary meteorology - Mars and Venus
Work is continuing on the mathematical modelling of the hydrodynamics of the arterial system. Discussion with Dr. McDonald has raised some questions relative to the geometric model of the arterial system. This area is considered important to provide a suitable base for consideration of the actual events taking place in the arteries. Attempts are being made to develop a model which will describe the geometry in terms of diameters against length, changes in cross-sectional area with division, and number of levels of arteries according to diameter. This work will be described in some detail in a technical report which is being prepared and will be submitted during the next quarter.
High speed rotor support system with foil bearing
Sixty-seventh annual meeting of ASTM on fracture toughness testing and application at Chicago in June 1964
Passive wobble damping system with pendulum damper designed for manned rotating space station
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Weldability and elevated temperature stability of refractory metal alloys
Aerodynamic characteristics of flares mounted on blunt bodies at supersonic and hypersonic speeds
Gaseous electrolyte development for batteries and fuel cells
Electrode and electrolyte studies for lithium- copper fluoride batteries
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silicon transistors
Computer oriented calculations on guidance and space flight problems
Stability and equilibrium measurements of sodium amalgam concentration cells with ammonia electrolytic solvent
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In-flight purification methods for oxygen and hydrogen gases used in Apollo fuel cell
Copper fluoride-lithium high energy density battery development
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transistors