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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Nitriding of titanium and titanium: 8 percent aluminum, 1 percent molybdenum, 1 percent vanadium alloy with an ion-beam source

Titanium and Ti-8Al-1Mo-1V alloy were nitrided with an ion-beam source of nitrogen or argon and nitrogen at a total pressure of 2 x 10 to the minus 4th power to 10 x 10 to the minus 4th power torr. The treated surface was characterized by surface profilometry, X-ray diffractometry, Auger electron spectroscopy and microhardness measurements. The tetragonal Ti2N phase formed in pure titanium and Ti-8Al-1Mo-1V alloy with traces of AlN in the alloy. Two opposite processes competed during the ion-beam-nitriding process: (1) formation of nitrides in the surface layer and (2) sputtering of the nitrided layers by the ion beam. The highest surface hardnesses, about 500 kg/sq mm in titanium and 800 kg/sq mm in Ti-8Al-1Mo-1V, were obtained by ion nitriding with an ion beam of pure nitrogen at 4.2 x 10 to the minus 4th power torr at a beam voltage of 1000 V.

Gill, A.↗
NASA NTRS1982

RF sputtered silicon and hafnium nitrides: Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or - 100 kg/sq mm was measured for hafnium nitride and 3900 + or - 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗
NASA NTRS1983

Application of modern surface analytical tools in the investigation of surface deterioration processes

Surface profilometry and scanning electron microscopy were utilized to study changes in the surface of polymers when eroded. The X-ray photoelectron spectroscopy (XPS) and depth profile analysis indicate the corrosion of metal and ceramic surfaces and reveal the diffusion of certain species into the surface to produce a change in mechanical properties. Ion implantation, nitriding and plating and their effects on the surface are characterized. Auger spectroscopy analysis identified morphological properties of coatings applied to surfaces by sputter deposition.

Buckley, D. H.↗
NASA NTRS1982

Nitridation of Si(111) by nitrogen atoms. II

The reaction between Si(111) and nitrogen atoms has been investigated by LEED, Auger, and electron energy loss (ELS) techniques. The early stage of the reaction at 850-1050 C involves the formation of a chemically reacted monolayer which grows in islands. The sticking coefficient for the submonolayer is estimated to be of the order of unity. Two electronically different surface structures can be formed during these stages, yielding the '8 x 8' and the quadruplet LEED patterns; the quadruplet unit cell is the one with the highest nitrogen density. A pure quadruplet structure is obtained from samples with a carbon contamination of the Si monolayer of about 5 pct. During the multilayer stages, the influence of the substrate is not as important, and the reactions at 850 C and above produce quadruplet-like local structures.

Schrott, A. G.↗
NASA NTRS1982

XPS, AES and friction studies of single-crystal silicon carbide

The surface chemistry and friction behavior of a single crystal silicon carbide surface parallel to the 0001 plane in sliding contact with iron at various temperatures to 1500 C in a vacuum of 3 x 10 nPa are investigated using X-ray photoelectron and Auger electron spectroscopy. Results show that graphite and carbide-type carbon are seen primarily on the silicon carbide surface in addition to silicon at temperatures to 800 C by both types of spectroscopy. The coefficients of friction for iron sliding against a silicon carbide surface parallel to the 0001 plane surface are found to be high at temperatures up to 800 C, with the silicon and carbide-type carbon at maximum intensity in the X-ray photoelectron spectroscopy at 800 C. The concentration of the graphite increases rapidly on the surface as the temperature is increased above 800 C, while the concentrations of the carbide-type carbon and silicon decrease rapidly and this presence of graphite is accompanied by a significant decrease in friction. Preheating the surfaces to 1500 C also gives dramatically lower coefficients of friction when reheating in the sliding temperature range of from room temperature to 1200 C, with this reduction in friction due to the graphite layer on the silicon carbide surface.

Miyoshi, K.↗
NASA NTRS1983

Drastic reduction of adsorption of CO and H2 on (111)-type Pd layers

Clean surfaces of (111)-type Pd layers, grown from the vapor phase on Mo(110) at room temperature, were used to study the adsorption of CO and H2 by temperature-programmed desorption, Auger electron spectroscopy, and low-energy electron diffraction. Mild annealing of the as-grown layers during a single desorption cycle (to about 600 K) drastically reduces the adsorption for both adsorbates. Low-dose argon-ion bombardment introduces surface imperfections which restore a high adsorption probability. The results are interpreted in terms of particular (111)-type surface structures that persist tp layer thicknesses of about four monolayers; the results raise questions with respect to the surface structure of supported thin epitaxial islands and particles of Pd and possibly also with respect to conventional methods of preparing bulk surfaces of Pd for adsorption studies.

Poppa, H.↗
NASA NTRS1983

Tribological characteristics of nitrogen (N+) implanted iron

The effect of implantation of nitrogen ions (1.5 MeV) on the friction and wear characteristics of pure ion sliding against M-50 steel (unimplanted) was studied in a pin-on-disk sliding friction apparatus. Test conditions included room temperature (25 C), a dry air atmosphere, a load of 1/2 kg (4.9 N), sliding velocities of 0.043 to 0.078 m/sec (15 to 25 rpm), a pure hydrocarbon lubricant (n-hexadecane), or a U.S.P. mineral oil and nitrogen ion implantation doses of 5x10 to the 15th power and 5x10 to the 17th power ions/sq cm. No differences in wear rates were observed in the low dose experiments. In the high dose experiments, small reductions in initial (40 percent) and steady state (20 percent) wear rates were observed for nitrogen implanted iron riders as compared with unimplanted controls. No differences in average friction coefficients were noted for either dose. Auger electron spectroscopy combined with argon ion bombardment revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 6 atomic percent at a depth of 0.8 microns. Similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration. No inward migration of nitrogen ions was observed. Previously announced in STAR as N82-24322

Jones, W. R., Jr.↗
NASA NTRS1983

Interfacial chemistry of electrical contacts on GaAs and Al0.3Ga0.7As

Thermal restructuring of oxides of GaAs and Al0.3Ga0.7As substrates has been studied using Auger electron spectroscopy and both neutral and secondary ion mass spectrometry. The oxide underwent restructuring at temperature of at least 250 C while gallium oxides desorbed at temperatures depending upon the type of oxide. Reoxidation at low oxygen pressures resulted in surface oxygen species different from those in native oxides. These species desorbed at about 520 C while native oxides desorbed at 600 C. Carbon-containing contaminants did not desorb. The implications of these results for electrical contacts are discussed.

Buonaquisti, A. D.↗
NASA NTRS1983

Interfacial layers in high-temperature-oxidized NiCrAl

The utility of Auger electron spectroscopy combined with ball cratering for depth analysis of oxide and diffusion layers produced in a Ni-14Cr-24Al alloy by oxidation in air at 1180 C for 25 hr is demonstrated. During postoxidation cooling, the oxide layers formed by this alloy spalled profusely. The remaining very thin oxide was primarily Cr2O3 with a trace of Ni. The underlying metal substrate exhibited gamma/gamma-prime and beta phases with a metallic interfacial layer which was similar to the bulk gamma/gamma-prime phase but slightly enriched in Cr and Al. These data are compared to electron microprobe results from a nominally identical alloy. The diffusion layer thickness is modelled with a simple mass balance equation and compared to recent results on the diffusion process in NiCrAl alloys.

Larson, L. A.↗
NASA NTRS1983

Core level excitation of simple gases

The ionization of simple gases by electron bombardment exhibits distinct resonances at electron energies slightly below the core level binding energies of the atomic constituents of the gas. A vacancy in an inner shell of the atom may recombine by a radiationless Auger process, thus leaving the molecule in a singly or higher ionized state. These ions are easily collected and the threshold resonances for excitation are evident in the second derivative of the ion yield plotted as a function of the energy of the electron beam. By using a mixture of gases, such as CO and CO2, it is possible to measure relative chemical shifts of the C and O 1s thresholds. In this case the C 1s threshold is 3.9 eV lower in CO than in CO2, and the O 1s threshold is 2.7 eV lower in CO than in CO2. The feasibility of constructing a simple analyzer based on this technique will be discussed to supplement conventional mass spectrometer analysis of gas composition.

Zhang, A.↗
NASA NTRS1983

Fatigue crack growth and low cycle fatigue of two nickel base superalloys

The fatigue crack growth and low cycle fatigue behavior of two P/M superalloys, Rene 95 and Astroloy, in the hot isostatically pressed (HIP) condition, was determined. Test variables included frequency, temperature, environment, and hold times at peak tensile loads (or strains). Crack initiation sites were identified in both alloys. Crack growth rates were shown to increase in argon with decreasing frequency or with the imposition of hold times. This behavior was attributed to the effect of oxygen in the argon. Auger analyses were performed on oxide films formed in argon. Low cycle fatigue lives also were degraded by tensile hold, contrary to previous reports in the literature. The role of environment in low cycle fatigue behavior is discussed.

Stoloff, N. S.↗
NASA NTRS1983

Surface acoustic wave/silicon monolithic sensor/processor

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Kowel, S. T.↗
NASA NTRS1983

A surface analytical examination of Stringer particles in Al-Li-Cu alloys

A surface analytical examination of powder metallurgy processed Al-Li-Cu alloys was conducted. The oxide stringer particles often found in these alloys was characterized. Particle characterization is important to more fully understand their impact on the stress corrosion and fracture properties of the alloy. The techniques used were SIMS (Secondary Ion Mass Spectroscopy) and SAM (Scanning Auger Microscopy). The results indicate that the oxide stringer particles contain both Al and Li with relatively high Li content and the Li compounds may be associated with the stringer particles, thereby locally depleting the adjacent matrix of Li solute.

Larson, L. A.↗
NASA NTRS1983

Radiative properties of advanced spacecraft heat shield materials

Experimental results are presented to show the effects of simulated reentry exposure by convective heating and by radiant heating on spectral and total emittance of statically oxidized Inconel 617 and Haynes HS188 superalloys to 1260 K and a silicide coatea (R512E) columbium 752 alloy to 1590 K. Convective heating exposures were conducted in a supersonic arc plasma wind tunnel using a wedge-shaped specimen configuration. Radiant tests were conducted at a pressure of .003 atmospheres of dry air at a flow velocity of several meters per second. Convective heating specimens were subjected to 8, 20, and 38 15-min heating cycles, and radiant heating specimens were tested for 10, 20, 50, and 100 30-min heating cycles. Changes in radiative properties are explained in terms of changes in composition resulting from simulated reentry tests. The methods used to evaluate morphological, compositional and crystallographic changes include: Auger electron spectroscopy; scanning electron microscopy; X-ray diffraction analysis; and electron microprobe analysis.

Cunnington, G. R.↗
NASA NTRS1984

Effect of Ion Sputtering on Interface Chemistry and Electrical Properties of an Gaas (100) Schottky Contacts

Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.

Wang, Y. X.↗
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1984

RF sputtered silicon and hafnium nitrides as applied to 440C steel

Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

Grill, A.↗