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NASA NTRS1986

Approximations useful for the prediction of electrostatic discharges for simple electrode geometries

The report provides approximations for estimating the capacitance and the ratio of electric field strength to potential for a certain class of electrode geometries. The geometry consists of an electrode near a grounded plane, with the electrode being a surface of revolution about the perpendicular to the plane. Some examples which show the accuracy of the capacitance estimate and the accuracy of the estimate of electric field over potential can be found in the appendix. When it is possible to estimate the potential of the electrode, knowing the ratio of electric field to potential will help to determine if an electrostatic discharge is likely to occur. Knowing the capacitance will help to determine the strength of the discharge (the energy released by it) if it does occur. A brief discussion of discharge mechanisms is given. The medium between the electrode and the grounded plane may be a neutral gas, a vacuum, or an unchanged homogeneous isotropic dielectric.

Edmonds, L.↗

NASA NTRS1987

Oscillator or Amplifier With Wide Frequency Range

Inductive and capacitive effects synthesized with feedback circuits. Oscillator/amplifier resistively tunable over wide frequency range. Feedback circuits containing operational amplifiers, resistors, and capacitors synthesize electrical effects of inductance and capacitance in parallel between input terminals. Synthetic inductance and capacitance, and, therefore, resonant frequency of input admittance, adjusted by changing potentiometer setting.

Kleinberg, L.↗

NASA NTRS1986

Oil film thickness measurement and analysis for an angular contact ball bearing operating in parched elastohydrodynamic lubrication

The capacitance method is used to estimate the oil film thickness in the Hertzian contact zone of an angular contact ball bearing operating in parched elastohydrodynamic lubrication. The parched elastohydrodynamic lubrication regime is characterized by a transient film thickness and basic speed ratio (ball spin rate over combined race speed) and the formation of a friction polymer. The experimental apparatus tests 40 mm 108 H ball bearings in the counter rotating race mode at loads of 200 and 300 lb, a film parameter of 1.6 and nominal inner and outer race speeds of 38 and 26 rps, respectively. Experimental results are presented for the capacitance, thickness, and conductance of the oil film as functions of elapsed time and for the basic speed ratios as a function of elapsed time, load, and amount of lubricant applied to the test bearing. Results indicate that a friction polymer formed from the initial lubricant has an effect on the capacitance and basic speed ratio measurements.

Hunter, Scott D.↗

NASA NTRS1986

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗

NASA NTRS1987

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗

NASA NTRS1987

Electrostatic charge on a dust size distribution in a plasma

The capacitance of a grain immersed in a steady state plasma containing a size distribution of dust particles is studied. The grain charge is determined by assuming the equilibrium potential has been obtained by a simple balance of electron and ion collection currents. It is shown that the validity of the analytical treatment given here for the linearized Poisson equation is confined to a certain region of space. Within this region and starting at very small plasma Debye length lambda(D), the capacitance at first exhibits a monotonic increase with increasing lambda(D). The capacitance eventually reaches a maximum, followed by a monotonic decrease. The charge density of the dust in the plasma is found to be only a function of the lambda(D); there is no significant dependence on the interparticle spacing.

Houpis, Harry L. F.↗

NASA NTRS1988

Approximations useful for the prediction of electrostatic discharges for simple electrode geometries

Edmonds, Larry D.↗

NASA NTRS1989

Stripline feed for a microstrip array of patch elements with teardrop shaped probes

A circularly polarized microstrip array antenna utilizing a honeycomb substrate made of dielectric material to support on one side the microstrip patch elements in an array, and on the other side a stripline circuit for feeding the patch elements in subarray groups of four with angular orientation and phase for producing circularly polarized radiation, preferably at a 0, 90, 180, and 270 degree relationship is described. The probe used for coupling each feed point in the stripline circuit to a microstrip patch element is teardrop shaped in order to introduce capacitance between the coupling probe and the metal sheet of the stripline circuit that serves as an antenna ground plane. The capacitance thus introduced tunes out inductance of the probe. The shape of the teardrop probe is not critical. The probe capacitance required is controlled by the maximum diameter for the teardrop shaped probe, which can be empirically determined for the operating frequency. An aluminum baffle around each subarray blocks out surface wave between subarrays.

Huang, John↗

NASA NTRS1989

Common source cascode amplifiers for integrating IR-FPA applications

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Woolaway, James T.↗

NASA NTRS1991

A magneto-sensitive skin for robots in space

The development of a robot arm proximity sensing skin that can sense intruding objects is described. The purpose of the sensor would be to prevent the robot from colliding with objects in space including human beings. Eventually a tri-mode system in envisioned including proximity, tactile, and thermal. To date the primary emphasis was on the proximity sensor which evolved from one based on magneto-inductive principles to the current design which is based on a capacitive-reflector system. The capacitive sensing element, backed by a reflector driven at the same voltage and in phase with the sensor, is used to reflect field lines away from the grounded robot toward the intruding object. This results in an increased sensing range of up to 12 in. with the reflector on compared with only 1 in. with it off. It is believed that this design advances the state-of-the-art in capacitive sensor performance.

Chauhan, D. S.↗

NASA NTRS1991

Some recent studies with the solid-ionomer electrochemical capacitor

Giner, Inc. has developed a high-energy-density, all-solid-ionomer electrochemical capacitor, completely free of liquid electrolyte. The novel features of this device include 1) a three-dimensional metal oxide-particulate-ionomer composite electrode structure, and 2) a unitized repeating cell element. The composite electrode structures are bonded to opposite sides of a thin sheet of a solid proton-conducting ionomer membrane and form an integrally bonded membrane and electrode assembly (MEA). Individual MEAs can be stacked in series as bipolar elements to form a multiple cell device. The discharge characteristics and energy storage properties of these devices are described. Typical capacitance measured for a unit cell is 1 F/cm(exp 2). Life testing of a multicell capacitor on an intermittent basis has shown, that over a 10,000 hour period, the capacitance and resistance of the cell has remained invariant. There has been no maintenance required on the device since it was fabricated. Other multicell units of shorter life duration have exhibited similar reliable performance characteristics. Recent work has focused on increasing the capacitance of the unitized structure and improving the low-temperature characteristics. The approaches and experimental results will be presented. Some possible advanced NASA applications for these unique all-solid-ionomer devices will be discussed.

S Sarangapani↗

NASA NTRS1992

Slot antenna SIS mixers for submillimeter wavelengths

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

Zmuidzinas, Jonas↗

NASA NTRS1992

Noise in Josepson effect mixers and the RSJ model

Josephson effect mixers have previously been observed to display 'excess' noise both in experiments with point contacts and in numerical simulations using the resistively shunted junction (RSJ) model. This excess noise causes the mixer noise temperature to be a factor of typically 20-100 times the physical temperature of the device. Previously, this excess was ascribed to conversion from unwanted sidebands of the local oscillator and Josephson frequencies and their harmonics. Our numerical modeling of the RSJ equations has led to a new understanding of the excess noise, which is simply due to the intrinsic Josephson oscillations of the device. In addition, we have extended the modeling to include the previously ignored case of finite device capacitance (i.e. RSJ capacitance parameter beta(sub c) does not equal 0, which is more realistic for lithographically defined Josephson such as shunted tunnel junctions or SNS bridges. For some cases, this yields an improvement of a factor of two in noise temperature from the zero capacitance models. We will discuss the device parameters which optimize the mixer performance for frequencies approaching the characteristic frequency of the device, which is given by the Josephson frequency at the I(sub c)R(sub n) voltage (nu = 2eI(sub c)R(sub n)/h). These modeling results predict good conversion efficiency and a noise temperature within a factor of a few of the physical temperature. Experiments are in progress to determine the accuracy of this modeling using a waveguide mixer at 100 GHz with optimized, resistively shunted Nb tunnel junctions. If the modeling results are valid, they are particularly encouraging for mixers in the submillimeter regime, given the possibility of obtaining non-hysteretic Josephson devices with I(sub c)R(sub n) products in excess of a millivolt, using for instance, high-T(sub c) SNS bridges. We discuss the modifications to the classical RSJ model which are necessary in the quantum regime (h nu greater than kT), and conclude the Josephson mixers may attain noise temperatures less than ten times the quantum limit at high frequencies.

Schoelkopf, R.↗

NASA NTRS1994

Capaciflector Camera

Sensing electrodes arranged in rows and columns used to generate capacitive images. Sensors of this type installed on robot arms, and three-dimensional capacitance images that they generate used by robot-control circuits to prevent collisions with capacitively sensed objects, to image and identify these objects, and to navigate amongst them.

Vranish, John M.↗

NASA NTRS1993

Capaciflector camera

A capacitive type proximity sensor having improved range and sensitivity between a surface and an intruding object in the vicinity of the surface having a voltage source, a number of outer electrical conductors on the surface with each forming one electrode of a number of sensor capacitors, the other electrode for each sensor capacitor being the object is described. The outer conductors are made from thin sheets of conductive material covered with insulation. An intermediate electrical conductor is located between the outer conductors and the surface and is of a size larger than the outer conductors to act as a shield for reducing the parasitic capacitance between the outer conductors and the surface. The intermediate conductor is also made from a thin sheet of conductive material covered with insulation. The outer conductors and the intermediate conductor are attached to the surface with no gap between the insulation on the conductors and no gap between the surface and the insulation on intermediate conductor, the outer conductors and the intermediate conductor conjoining with each other and with the surface, with the surface acting as a ground plane. A current-measuring voltage follower circuit is connected to the voltage source for coupling in phase and amplitude the instantaneous voltage at the voltage source to the outer electrical conductors and the intermediate electrical conductor. This circuit is responsive to the change in capacitance of the sensor capacitors and generates a number of output signals.

Vranish, John M.↗

NASA NTRS1994

Steering capaciflector sensor

A capacitive type proximity sensor having substantial range and sensitivity between a machine and an intruding object in the immediate vicinity of the machine and having a steerable sensing field has an outer electrical conductor on the machine forming one electrode of a sensor capacitor, the other electrode is the object. The outer conductor is a thin sheet of conductive material with a pair (or more) of intermediate electrical conductors located between the outer conductor and the machine. The pair of intermediate electrical conductors are in close proximity to each other and together form a surface having a size substantially larger than the outer conductor to act as a shield for reducing the parasitic capacitance between the outer conductor and the machine and to steer the sensor field. The pair of intermediate conductors are thin sheets of conductive material substantially wider than the first conductor. The outer and pair of intermediate conductors are attached to a surface on the machine in electrical isolation and with no gaps between the conductors and no gap between the surface and the pair of intermediate conductors. The outer and pair of intermediate conductors are also in conformance with each other and the surface of the machine, and the surface of the machine acts as a ground plane. Variable gain voltage follower circuits are used for coupling, in phase, the instantaneous voltage at the outer electrical conductor to the pair of intermediate electrical conductors and a signal generator is coupled to the outer conductor and is responsive to the capacitance of the sensor capacitor for generating a control signal to the machine.

Jenstrom, Del T.↗

NASA NTRS1995

Development of electrochemical super capacitors for EMA applications

In a NASA SBIR Phase I program (Contract No. NAS8-40119), Giner, Inc. evaluated the feasibility of fabricating an all-solid-ionomer multicell electrochemical capacitor having a unit cell capacitance greater than 2 F/sq cm and a repeating element thickness of 6 mils. This capacitor can possibly be used by NASA as a high-rate energy source for electromechanical actuator (EMA) activation for advanced space missions. The high unit cell capacitance and low repeating element thickness will allow for the fabrication of a low-volume, low-weight device, favorable characteristics for space applications. These same characteristics also make the capacitor attractive for terrestrial applications, such as load-leveling batteries or fuel cells in electric vehicle applications. Although the projected energy densities for electrochemical capacitors are about two orders of magnitude lower than that of batteries, the high-power-density characteristics of these devices render them as potentially viable candidates for meeting pulse or peak electrical power requirements for some anticipated aerospace mission scenarios, especially those with discharge times on the millisecond to second time scale. On a volumetric or gravimetric basis, the advantages of utilizing electrochemical capacitors rather than batteries for meeting the peak power demands associated with a specific mission scenario will largely depend upon the total and pulse durations of the power peaks. The effect of preparation conditions on RuO(x), the active component in an all-solid-ionomer electrochemical capacitor, was evaluated during this program. Methods were identified to prepare RuO(x) having a surface areagreater than 180 sq m/g, and a capacitance of greater than 2 F/sq cm. Further efforts to reproducibly obtain these high-surface-area materials in scaled-up batches will be evaluated in Phase 2. During this Phase 1 program we identified a superior Nafion 105 membrane, having a film thickness of 5 mils, that showed excellent performance in our all-solid-ionomer capacitors and resulted in electrochemical capacitors with a repeating element thickness of 8 mils. We are currently working with membrane manufacturers to obtain a high performance membrane in less than 3 mil thickness to obtain a repeating element thickness of 6 mils or less. A 10-cell all-solid ionomer capacitor stack, with each cell having a 222 sq cm active area, was fabricated and evaluated as part of the Phase 1 program. Further Scale-up of a high-energy-density stack is plannedin Phase 2.

Kosek, J. A.↗

NASA NTRS1995

On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths

Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.

TRT-THEORETICAL↗