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NASA NTRS1981

Experimental and theoretical studies of the laws governing condensate deposition from combustion gases

A description is presented of the results of a research program directed at an improved understanding of condensate deposition rate phenomena in combustion systems. The conducted experiments make use of real-time optical laser reflectance-interference-polarization techniques in flame environments. The obtained new data and the results of previous gravimetric experiments are employed as a basis for the development of a comprehensive convective diffusion deposition theory, taking into account the assumption of a multicomponent vapor or multisize class particles 'source-free' boundary layer. The theory makes it possible to provide self-consistent salt/ash/soot deposition rate predictions over a wide variety of environmental conditions.

Rosner, D. E.↗

NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗

NASA NTRS1982

Plasma deposition and surface modification techniques for wear resistance

The ion-assisted or plasma coating technology is discussed as it applies to the deposition of hard, wear resistant refractory compound films. Of the many sputtering and ion plating modes and configurations the reactive magnetron sputtering and the reactive triode ion plating techniques are the preferred ones to deposit wear resistant coatings for tribological applications. Both of these techniques incorporate additional means to enhance the ionization efficiency and chemical reaction to precision tailor desirable tribological characteristics. Interrelationships between film formation, structure, and ribological properties are strictly controlled by the deposition parameters and the substrate condition. The enhanced ionization contributes to the excellent adherence and coherence, reduced internal stresses and improved structural growth to form dense, cohesive, equiaxed grain structure for improved wear resistance and control.

Spalvins, T.↗

NASA NTRS1982

The intercrater plains of Mercury and the Moon: Their nature, origin and role in terrestrial planet evolution. Estimated thickness of ejecta deposits compared to to crater rim heights

The area of the continuous ejecta deposits on mercury was calculated to vary from 2.24 to 0.64 times the crater's area for those of diameter 40 km to 300 km. Because crater boundaries on the geologic map include the detectable continuous ejecta blanket, plains exterior to these deposits must consist of farther-flung ejecta (of that or other craters), or volcanic deposits flooding the intervening areas. Ejecta models are explored.

Leake, M. A.↗

NASA NTRS1984

FTIR analysis of aviation fuel deposits

Five modes of operation of the Nicolet 7199 Fourier Transform Infrared Spectrophotometer have been evaluated for application in analysis of the chemical structure of accelerated storage/thermal deposits produced by jet fuels. Using primarily the absorption and emission modes, the effects of fuel type, stress temperature, stress time, type of spiking agent, spiking agent concentration, fuel flow, and post-depositional treatment on the chemical nature of fuel deposits have been determined.

Helmick, L. S.↗

NASA NTRS1982

Development of a polysilicon process based on chemical vapor deposition, phase 1 and phase 2

High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.

Plahutnik, F.↗

NASA NTRS1984

Silicon nitride films deposited with an electron beam created plasma

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Bishop, D. C.↗

NASA NTRS1984

Ion beam deposited silicon carbide on glass optics and replica gratings

The results of an attempt to coat optical flats and replace echelle gratings with ion-deposited SiC are reported. Deposition was performed by bombarding a SiC target with an ion beam angled 45 deg relative to the target. Half the target was covered with stainless steel to furnish a comparison opportunity. After precleaning SiC coatings of 300-2200 A thickness were deposited. The specimens had previously been coated with either Au or Al or were left blank. Reflectance and diffraction data were taken of the finished flats and gratings. The SiC-coated flats performed as well as uncoated flats while the echelles exhibited deteriorating performance with increasing coating thickness. Further studies are indicated on the effect of coating thickness on surface roughness.

Windt, D. L.↗

NASA NTRS1983

Development of a Polysilicon Process Based on Chemical Vapor Deposition of Dichlorosilane in an Advanced Siemen's Reactor

Dichlorosilane (DCS) was used as the feedstock for an advanced decomposition reactor for silicon production. The advanced reactor had a cool bell jar wall temperature, 300 C, when compared to Siemen's reactors previously used for DCS decomposition. Previous reactors had bell jar wall temperatures of approximately 750 C. The cooler wall temperature allows higher DCS flow rates and concentrations. A silicon deposition rate of 2.28 gm/hr-cm was achieved with power consumption of 59 kWh/kg. Interpretation of data suggests that a 2.8 gm/hr-cm deposition rate is possible. Screening of lower cost materials of construction was done as a separate program segment. Stainless Steel (304 and 316), Hastalloy B, Monel 400 and 1010-Carbon Steel were placed individually in an experimental scale reactor. Silicon was deposited from trichlorosilane feedstock. The resultant silicon was analyzed for electrically active and metallic impurities as well as carbon. No material contributed significant amounts of electrically active or metallic impurities, but all contributed carbon.

Arevidson, A. N.↗

NASA NTRS1985

Apparatus and method to keep the walls of a free-space reactor free from deposits of solid materials

An apparatus and method is disclosed for keeping interior walls of a reaction vessel free of undesirable deposits of solid materials in gas-to-solid reactions. The apparatus includes a movable cleaning head which is configured to be substantially complementary to the interior contour of the walls of the reaction vessel. The head ejects a stream of gas with a relatively high velocity into a narrow space between the head and the walls. The head is moved substantially continuously to at least intermittently blow the stream of gas to substantially the entire surface of the walls wherein undesirable solid deposition is likely to occur. The disclosed apparatus and process is particularly useful for keeping the walls of a free-space silane-gas-to-solid-silicon reactor free of undesirable silicon deposits.

Yamakawa, K. A.↗

NASA NTRS1984

A morphological study of silicon carbide prepared by chemical vapor deposition

Surface morphologies of SiC deposits obtained via chemical vapor deposition (CVD) were studied as functions of substrate surface temperature and the concentration of the silicon and carbon source material, methyltrichlorosilane. Substrates of graphite and alpha-SiC crystals were used. Explanations of the observed morphologies on graphite substrates and their marked changes with temperature are given in terms of chemical kinetics and mass transport arguments. The results of thermodynamic calculations were used to help explain the observed morphologies of the deposits on alpha-SiC substrates.

Tsui, P.↗

NASA NTRS1985

Remote sensing of lunar pyroclastic mantling deposits

Reflectance spectra from several regional lunar pyroclastic deposits are presented in support of the theory that mantling units have a unique spectral signature indicative of the presence of a significant, Fe-bearing volcanic glass component. The Rime Bode region discussed is illustrative of an area in which several types of remote sensing data were used to reconstruct the geologic events associated with the emplacement of a regional pyroclastic mantling deposit. Five new areas are identified on the basis of the present data which may represent higher albedo regional pyroclastic deposits.

Gaddis, L. R.↗

NASA NTRS1985

Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

Valco, G. J.↗

NASA NTRS1986

Improvements in Ionized Cluster-Beam Deposition

Lower temperatures result in higher purity and fewer equipment problems. In cluster-beam deposition, clusters of atoms formed by adiabatic expansion nozzle and with proper nozzle design, expanding vapor cools sufficiently to become supersaturated and form clusters of material deposited. Clusters are ionized and accelerated in electric field and then impacted on substrate where films form. Improved cluster-beam technique useful for deposition of refractory metals.

Fitzgerald, D. J.↗

NASA NTRS1986

Increasing the Deposition Rate of Silicon

Modified Siemens reactor enables chemical vapor deposition (CVD) of silicon to occur simultaneously on inner and outer surfaces of hollow cylinder, resulting in increase in mass of silicon deposited per unit time. Outer reactor for silicon deposition made from quartz or stainless steel. Hollow cylinder either single resistance-heated hollow cylinder about 5 to 10 cm or greater in diameter or 1-cm-diameter rods aligned in circular channels at top and bottom, initial circles being 5 to 10 cm in diameter or greater.

Lutwack, R.↗

NASA NTRS1985

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

NASA NTRS1986

Regional dust deposits on Mars - Physical properties, age, and history

This paper presents a description of the use of Viking infrared thermal mapper (IRTM), earth-based radar, and visual observations for the study of the existence of regional dust deposits. It is pointed out that these observations provide estimates of particle size, rock abundance, surface texture, thermal emissivity, and albedo. These estimates can be used to characterize surface deposits and to determine the degree of surface mantling. Attention is given to the regolith properties, atmospheric dust properties, and a model for formation of low-inertia regions. It is found that global dust storms deposit currently approximately 25 microns of material per year in the equatorial region. Over geologic time this value may vary from 0 to 250 microns due to variations in atmospheric conditions produced by orbital variations.

Christensen, P. R.↗

NASA NTRS1985

Preparation and analysis of particulate metal deposits

Small particles and clusters of palladium were grown by deposition from the vapor phase under ultrahigh vacuum conditions. Amorphous and crystalline support films of Al2O3 and ultrathin amorphous carbon films were used as substrate materials. The growth of the metal deposit was monitored in situ by scanning transmission diffraction of energy-filtered 100 kV electrons and high resolution transmission electron microscopy (TEM) analysis was performed in a separate instrument. It was established by in situ TEM, however, that the transfer of specimens in this case did not unduly affect the size and distribution of deposit particles. It was found that the cleanness, stoichiometry, crystallinity and structural perfection of the support surface play an essential role in determining the crystalline perfection and structure of the particles. The smallest palladium clusters reproducibly prepared contained not more than six atoms but size determinations below 1 nm average particle diameter are very problematic with conventional TEM. Palladium particles grown on carbon supports feature an impurity-stabilized mosaic structure.

Poppa, H.↗