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The epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.
The defect state prevailing in iodine doped single-crystal samples of Hg0.8Cd0.2Te, annealed at 450-600 C in Hg vapor, has been deduced from Hall effect measurements on samples cooled to 77 K from the annealing temperature. Results are found to be similar to those previously obtained for iodine doped CdS, i.e. iodine acts as a single donor occupying Te lattice sites with a fraction paired with the native acceptor defects. The concentration of iodine on tellurium lattice sites increases with the partial pressure of Hg, whereas that of the pair species increases as the partial pressure of Hg decreases.
The heater head tubes of current prototype automotive Stirling engines are fabricated from alloy N-155, an alloy which contains 20 percent cobalt. Because the United States imports over 90 percent of the cobalt used in this country and resource supplies could not meet the demand imposed by automotive applications of cobalt in the heater head (tubes plus cylinders and regenerator housings), it is imperative that substitute alloys free of cobalt be identified. The research described herein focused on the heater head tubes. Sixteen alloys (15 potential substitutes plus the 20 percent Co N-155 alloy) were evaluated in the form of thin wall tubing in the NASA Lewis Research Center Stirling simulator materials diesel fuel fired test rigs. Tubes filled with either hydrogen doped with 1 percent CO2 or with helium at a gas pressure of 15 MPa and a temperature of 820 C were cyclic endurance tested for times up to 3500 hr. Results showed that two iron-nickel base superalloys, CG-27 and Pyromet 901 survived the 3500 hr endurance test. The remaining alloys failed by creep-rupture at times less than 3000 hr, however, several other alloys had superior lives to N-155. Results further showed that doping the hydrogen working fluid with 1 vol % CO2 is an effective means of reducing hydrogen permeability through all the alloy tubes investigated.
A series of polyimide films containing pyridine coordinating groups doped with cobalt or nickel ions has been examined. Using 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride, films were prepared in combination with 4,4'-oxydianiline, 4,4'-dianiline sulfide, 3,3'-bis(aminopyridine) sulfide and 2,2'-dioxyphenelenebis (5,5'-aminopyridine). Room temperature volume resistivities have been found to decrease slightly with sulfur and pyridine containing diamines relative to diamines which do not contain these functionalities. Doping with cobalt and nickel additives results in further lowering of room temperature volume resistivity. Preliminary temperature profiling experiments have shown that volume resistivity decreases as T(g) is approached.
A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.
It is pointed out that the study of intensity-dependent absorption (IDA) in general, and two-photon absorption (TPA), in particular, has suffered from experimental difficulties and inadequate theoretical models. Bass et al. (1979) could improve the experimental situation by making use of laser calorimetry to obtain directly the TPA coefficient of a medium with a high degree of sensitivity. In the present investigation, the employed technique has been used to study the effect of deep level dopants on IDA in InP and GaAs. It is found that the coefficient for IDA is strongly dependent on the presence of Fe in InP and Cr in GaAs. The conducted investigation had the objective to examine the effect of deep level impurities on IDA processes in InP and GaAs. Fe-doped InP and Cr-doped GaAs were compared with undoped crystals.
A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.
Theoretical work on heavily doped silicon was described. Heavily doped polysilicon was used as a back-surface passivant replacing the usual back-surface field (BSF). Very good first results were achieved and there is the promise of a simple, low temperature deposition process. Short-circuit current-decay measurement methods were also covered.
Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region.
A new GaAs nipi doping superlattice solar cell structure is presented, which holds promise for high efficiency coupled with very high radiation tolerance. The structure has all contacts on the unilluminated side. Design constraints are presented which this structure must satisfy in order to exhibit high efficiency and high radiation tolerance. The results of self-consistent quantum mechanical calculations are presented which show that a viable design of this cell would include relatively thick n and p layers which are fairly heavily doped.
The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.
The degree of anisotropy in the anisotropic electron transport that has been observed in GaAs modulation-doped quantum wells grown by MBE on Al(0.3)Ga(0.7)As is related to the thickness and growth parameters of this substrate, which is grown just prior to the inverted interface. It is presently observed that the inverted interface has an anisotropic roughness which affects the 77 K low field electron transport parallel to the interface, and gives rise to anisotropic electron scattering in the GaAs modulation-doped quantum well.
Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.
Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.
Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
An asymmetric delta-doped GaAs structure is described which exhibits novel photovoltaic effects and low-intensity nonlinear optics. Of particular interest in this kind of structure is the ability to design the electrooptical and nonlinear optical properties and the material response time over a wide range by appropriate design of the doping profile.
Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Al(x)Ga(1-x)As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 10 to the 15th/cu cm in a sample doped with 10 to the 18th Be/cu cm and in much lower concentrations in a 10 to the 17th Be/cu cm sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.
Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.