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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Demonstration of a Novel Technology to Manage Electricity Demand in Grid-Independent Military Microgrids

This research was conducted by the National Renewable Energy Laboratory (NREL) in collaboration with the S&C Electric Inc. through funding provided by the ESTCP. The project demonstrates use of cybersecure Automated Demand Response (ADR) technology to effectively manage microgrid loads during grid-independent, also known as "islanded," operation. When military microgrids become isolated from the main electrical grid, they are required to balance electricity supply and demand locally. Given that local generation may be constrained, the prevailing strategy involves shedding all but the most critical loads by tripping smart circuit breakers, which then necessitate manual resetting. This approach is generally implemented at the building level, which means that the buildings with mission-critical activities are exempt from load management and remain fully powered, whereas those deemed non-critical can experience a complete loss of service. In this research we developed a method that allows building automation systems to selectively control their assets in response to load shedding request from a microgrid controller, avoiding total loss of service in contrast to the conventional control approach. A commercial OpenADR client server by GridFabric is used for communication between the microgrid controller and the building management system (BMS). The microgrid controller monitors both generation capacity and various assets within the microgrid and issues a demand reduction request when necessary. This request is communicated to the OpenADR server via Modbus. Upon receiving the request, the OpenADR server forwards it to the BMS utilizing the OpenADR protocol. The BMS is pre-configured with various levels of load reduction strategies based on the controllable assets available, allowing for a nuanced approach to demand reduction. Both lab and field tests were performed that considered load shedding needed to achieve closed transition into island mode and to accommodate changing loads and power source availability while islanded. A commercial microgrid controller was used for these tests with normal programming within the expected constraints of the system capabilities. That is, the solution did not require any specialized modification to the code base of the controller. Given the latency of the round-trip communication path between the microgrid controller and the various devices involved with the load shed processes, there are certain scenarios for which the demonstrated solution are appropriate and some which are not. The methods described in this report can be used for load shedding/restoration during transitions between islanded and grid-tied modes of operation, as well as accommodating normal variations in load and the need to remove a power source from operation for maintenance. These methods should not be used for scenarios that require load shedding within a second or two such as sudden and unanticipated significant load increases or loss of power sources through equipment faults.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Parasitic Effects in Impedance Spectrum of PEM Water Electrolysis Cells: Case Study of High-Frequency Inductive Effects

Electrochemical impedance spectroscopy (EIS) is a powerful tool to characterize and distinguish electrochemical, electrical, and diffusive processes in an electrolysis cell. The EIS response with small impedance (mΩ) depends on components and materials of the cell, but often also on the electrical setup, cables, and connectors, leading to incorrect conclusions about the performance of the electrolysis cells. These parasitic effects are assessed via a short-circuit measurement and confirmed to be external from the membrane electrode assembly (MEA). In the setup, the inductive characteristic is described by a modified inductive reactance and must be included in the equivalent circuit model (ECM) which is fitting the cell EIS spectra in operation (in situ). If points of the spectra showing inductive characteristic (below x-axis in Nyquist plot) are excluded from the ECM evaluation, an artificially increased ohmic resistance at high frequencies is obtained. In addition, considerations on other components of the ECM can be misleading and significantly incorrect. The only way to avoid that inductive behavior caused by the external setup is incorrectly assigned to the ECM describing properties of the MEA is to include the inductive effects in the ECM analysis of in situ EIS measurements.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Sr 2 Fe 2–X Mo X O 6 double perovskites as electrocatalysts for oxidative dehydrogenation of ethane: Effect of B-site stoichiometry

The oxidative dehydrogenation of ethane (ODHE) was investigated using a solid oxide electrocatalytic cell with Sr 2 Fe 2–X Mo X O 6–δ (SFM) double perovskite as the anode electrocatalyst. As shown in the XRD patterns, SFM perovskites maintained their cubic structure upon modifying the B-site ratios of Mo and Fe. Increasing the Mo content of the perovskite structure resulted in a lower water signal intensity at low temperatures in TPR profiles, indicative of moderate oxygen transport through the perovskite structure. Because Mo–O bonds are stronger than Fe–O bonds, the electrical conductivity of SFM perovskites decreased with increasing Mo content. When operated at 100 mA cm –2 , ODHE activity improved four times compared to open circuit voltage, resulting in 16.1% conversion of C 2 H 6 and 83.1% selectivity to C 2 H 4 . It has been demonstrated that oxygen ions provided by perovskite lattices were the key species involved in activating C 2 H 6 based on the in-situ DRIFTS experiments. In conclusion, the SFM perovskite with higher Mo content showed the highest conversion and selectivity due moderate oxygen ion mobility and fast desorption of C 2 H 4 .

25 ENERGY STORAGE↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

DC Circuit Breakers: A Technology Development Status Survey

DC circuit breakers (DCCBs) play a significant role in obtaining the reliability and stability of DC power systems. Selective and fast isolating of faults minimizes the power supply outages to end electricity users and protects the power converters implemented in the DC system. During the last decades, DCCBs have been deeply investigated in industry and academia. There has been impressive progress in terms of efficiency, response time, power-density, lifetime, and electrical operating ratings. Introducing wide bandgap (WBG) devices further has motivated researchers to propose more efficient and novel topologies. This paper provides a point of reference and a background review for DCCBs from novel aspects, fulfilling absent parts in the literature. The elaborated subjects include current commutation circuitry, DCCBs trip-curves developments, newly added functions to DCCBs, as well as marketing analysis. The advancements of DCCBs are surveyed and development needs are recognized. This paper aims to identify the future research needs of DCCBs for emerging DC power systems.

42 ENGINEERING↗
DOE OSTI2024

The effect of remnant CdSe layers on the performance of CdSeTe/CdTe photovoltaic devices

Thin film CdTe-based photovoltaic devices have achieved high efficiency above 22 %. The recent improvement in efficiency is due to Se alloying in the CdTe absorbers to form a CdSeTe/CdTe structure. The subsequent band gap grading increases the short circuit current density. The Se can be introduced by depositing a precursor thin film of either CdSe or a CdSeTe alloy and then diffusing the Se into the CdTe during the high temperature cadmium chloride activation process. Using CdSe is preferred because it is easier to control the Se concentration. However, during fabrication of the CdSeTe/CdTe devices, the CdSe thickness needs to be precisely controlled to prevent the retention of a CdSe remnant layer after the activation treatment. Retention of a remnant CdSe layer causes a dramatic reduction in device efficiency. In this work, we show that the reduction in efficiency is caused by a number of factors. The remnant CdSe layer is n-type which moves the position of the p-n junction. Also, it is widely thought that the CdSe remnants are photo-inactive. In this work, we clarify that the individual CdSe grains are actually highly photo-active. However, the grain sizes in the CdSe remnant and the adjacent CdSeTe layer are very small resulting in a high grain boundary area. Although the grain boundaries are passivated with chlorine, cathodoluminescence imaging and electrical measurements show that this is only partially effective. Also, EQE measurements show that the remnant CdSe causes parasitic absorption. Overall, the remnant CdSe layer causes a reduction in short circuit current density and device efficiency. The thickness of the CdSe precursor layer and the cadmium chloride activation process conditions must be precisely optimised to ensure that all the CdSe is consumed and inter-diffused to form the CdSeTe alloy for highest efficiency devices.

CdSe remnant↗
DOE OSTI2024

Post-processing of phase change material in a zero-change commercial silicon photonic process

Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.

Optics↗
DOE OSTI2026

Generalization of Stoney’s equation for flexoelectric thin films on elastic substrates

When a thin film is deposited on an incompatible elastic substrate, the film develops an elastic mismatch strain, causing the film–substrate system to bend. Stoney’s equation relates the curvature of the bent film–substrate system with the residual stress developed in the film, and can be used to infer film properties from curvature measurements. Certain materials exhibit electromechanical coupling, such as piezoelectricity and flexoelectricity, which can alter the curvature and strains. In this work, we generalize Stoney’s equation to include flexoelectric and piezoelectric effects in the film. Considering both open and closed circuit configurations, as well as uniform and non-uniform film properties, we compare different cases of electromechanical coupling and discuss their influence on curvature, strains, and electric polarization in the film.

Ghosh, Swarnava [ORNL] (ORCID:0000000338005264)↗
DOE OSTI2020

An Overview of Spread Spectrum Time Domain Reflectometry Responses to Photovoltaic Faults

Spread spectrum time domain reflectometry (SSTDR) is a broadband electrical reflectometry technique that has been used to detect and locate faults on live electrical systems, including photovoltaic systems. In this article, we evaluate the detectability and localizability from both existing literature and our own measurements using SSTDR of open-circuit faults, connection faults, short-circuit faults, ground faults, arc faults, shading faults, bypass diode faults, and accelerated degradation faults in PV cells and mini-modules. Additionally, reflection magnitudes for these faults are compared. Herein, preliminary data on buried and grounded PV cable along with arc fault detection are presented.

14 SOLAR ENERGY↗
DOE OSTI2025

On-chip frequency-bin quantum photonics

Abstract Frequency-bin encoding furnishes a compelling pathway for quantum information processing systems compatible with established lightwave infrastructures based on fiber-optic transmission and wavelength-division multiplexing. Yet although significant progress has been realized in proof-of-principle tabletop demonstrations, ranging from arbitrary single-qubit gates to controllable multiphoton interference, challenges in scaling frequency-bin processors to larger systems remain. In this Perspective, we highlight recent advances at the intersection of frequency-bin encoding and integrated photonics that are fundamentally transforming the outlook for scalable frequency-based quantum information. Focusing specifically on results on sources, state manipulation, and hyperentanglement, we envision a possible future in which on-chip frequency-bin circuits fulfill critical roles in quantum information processing, particularly in communications and networking.

electro-optic modulators↗
DOE OSTI2022

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗
DOE OSTI2023

Traction Motor Design Trade-Offs with Additively Manufactured Anisotropic Bonded Magnets

Extrusion based big area additive manufacturing (BAAM) has been previously demonstrated for the fabrication of dense anisotropic bonded magnets. This paper reports on design trade-offs when such magnets are employed in a motor designed for electric vehicle applications. An external rotor fractional slot permanent magnet synchronous machine designed with sintered dysprosium free magnets rated for 100kW peak and 50kW continuous power is used as the baseline. The impact of using the bonded BAAM magnets on the motor and inverter volumes, motor loss and cooling systems as well as demagnetization margins is evaluated. It is found that although the motor power density reduces due to the lower energy product of the BAAM magnets, there are other system level benefits including reductions in the cooling system requirement, lower inverter rating and volume, decrease in short circuit current and improved demagnetization marains.

additive manufacturing↗
DOE OSTI2026

Using Explainable Artificial Intelligence to Predict Perovskite Solar Cell Electrical Metastability from Operando Photoluminescence Images in Accelerated Stress Testing

Metal halide perovskite (MHP) solar cells exhibit a metastable response to bias governed by coupled ionic–electronic processes, complicating the conventional reciprocity relation between luminescence intensity and device open-circuit voltage (V oc ). This limits the use of luminescence as a diagnostic for device screening or accelerated stress testing, motivating new approaches that can interpret photoluminescence (PL) signals under nonequilibrium conditions. From the artificial intelligence perspective, we develop an explainable deep learning framework that integrates convolutional neural networks (CNN), long short-term memory (LSTM) layers, and an attention mechanism to learn spatiotemporal features from operando photoluminescence PL image sequences. The model achieves a mean absolute error of ±0.027 V in predicting open-circuit voltage transients and reduces extreme-tail errors by up to 78% compared to physics-based reciprocity calculations. Gradient-weighted Class Activation Mapping (Grad-CAM) provides interpretability by highlighting physically meaningful regions such as electrode edges and emergent defect features. From the engineering application perspective, this framework enables accurate, contactless prediction of device V oc and identification of degradation-relevant features during accelerated aging of perovskite solar cells. This approach demonstrates how explainable AI can enhance operando diagnostics and reliability analysis in photovoltaic devices under nonequilibrium conditions.

14 SOLAR ENERGY↗
DOE OSTI2020

Microbial potentiometric sensor array measurements in unsaturated soils

The overarching goal of this study is to demonstrate a novel technology for monitoring changes in electrical potential of unsaturated soils using biofilm-populated electrodes. The novelty of the study stems from the fact that it demonstrates a method for measuring open-circuit potentials (OCP) in environments without the presence of an electrolyte solution. This study also reveals that using a biofilm-populated electrode as a reference in stable environments could successfully be employed to assess and monitor the electrochemical potential generated by plants and microorganisms. The findings imply that long-term (months to years) and real-time measurements of the open-circuit potential in unsaturated soils are possible. Because MPS arrays can directly measure open-circuit potential from the biofilm, the challenges related to locally induced electrochemical changes caused by microorganisms in the soil to achieve optimum physiological levels are eliminated. The simplicity of the technology, which allows for multiple indicator electrodes to be referenced against an “internal” reference electrode, enables spatial-temporal monitoring of the changes in the soil and the generation of 2D- or 3D-signal patterns. Once a signal pattern, generated by an array of sensors, develops (usually after 30 to 90 days), it does not significantly change unless the soil is exposed to external stimuli. The observed OCP phenomena, however, suggests that the change in OCP signal is independent of changes in soil conductivity resulting from the addition of water. In brief, findings suggest that the proposed technology can enable multidimensional profiling and long-term monitoring of changes occurring in unsaturated soils without direct implications of presence of water. The changes in the 2D or 3-D signal patterns, however, can be correlated to other important parameters that characterize soil health.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2025

Optimizing Insulation Design for Transformers in Medium Voltage Power Conversion Systems

Medium-frequency transformers (MFTs) play a crucial role in medium-voltage (MV) solidstate transformer (SST) systems, particularly in extreme fast charging applications. Achieving partial discharge (PD)-free operation while maintaining high power density is a significant challenge due to the high electric field (E-field) stresses inherent in MV applications. This dissertation focuses on the insulation design and optimization of MFTs used in both the main power electronics circuits and auxiliary power supplies. The study begins with an overview of insulation testing methodologies, including high potential tests, basic insulation level tests, and PD tests, which are critical for evaluating MFT insulation reliability. Given the importance of PD-free operation for long-term reliability, particular emphasis is placed on understanding PD mechanisms, including void, corona, and surface discharge, and their mitigation strategies. A high voltage isolated auxiliary power supply is then introduced, utilizing a gapped transformer encapsulated in silicone gel. This design achieves PD-free insulation up to 18 kV RMS while maintaining low coupling capacitance to minimize common-mode current. The proposed solution ensures reliable operation in MV environments and offers a scalable approach for auxiliary power in cascaded SST architectures. To improve MFT insulation in main power conversion circuits, a novel structure is developed using polypropylene sheets and potting compounds to create a void-free air gap, effectively mitigating E-field intensity. A prototype transformer with this insulation structure is built and achieves PD-free operation up to 30 kV RMS. This design is experimentally validated in a resonant converter operating at 46 kW, demonstrating its feasibility for MV SST applications. Further optimization is implemented to enhance MFT performance for dual-active-bridge(DAB) converters by integrating a semiconductive shielding layer within the insulation structure. This shielding layer improves the magnetic coupling coefficient while effectively confining the E-field within high insulation materials, thereby reducing eddy current losses. The optimized MFT achieves PD-free operation at 12.6 kV RMS and is successfully tested in a DAB converter operating at 43 kW, which meets the insulation requirements for a 13.2 kV SST system. This dissertation advances MFT insulation design by introducing and experimentally validating novel approaches that improve high voltage insulation while optimizing magnetic coupling and manufacturability. The proposed insulation structures enable PD-free operation while minimizing insulation material usage and simplifying assembly, making them ideal for high power, high voltage applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Buried interface modulation via $\mathrm{PEDOT:PSS}$ ionic exchange for the Sn-Pb mixed perovskite based solar cells

To apply Sn-Pb mixed perovskite solar cells for highly efficient single- or multi-junction devices, understanding device-specific buried interfaces is necessary. Poly [3,4-ethylenedioxythiophene]:poly[styrene sulfonate] (PEDOT:PSS) is primarily used as a hole transport layer in Sn-Pb mixed perovskite solar cells. However, the spatial heterogeneity of PEDOT:PSS, caused by its PEDOT-rich and PSS-rich domains, induces many defects at the buried interface in PEDOT:PSS/perovskite, which limits device performance. Here, we present ionic exchange (IE) of PEDOT:PSS via a combination of methylamine iodide (MAI) and dimethyl sulfoxide (DMSO). Through surface analyses and density functional theory (DFT) simulations, we confirm that the IE process preferentially form PEDOT-I and MA-PSS and that PSS-rich domains bind to DMSO. Thus, the spatial separation of PEDOT:PSS is solved, and the exchanged MA + and I - ions serve as a bridge between PEDOT:PSS and the perovskite, leading to improved physical, chemical, and electrical properties of the buried interface. The Sn-Pb mixed perovskite solar cells using IE-PEDOT:PSS achieve an improved efficiency of 21.3% with an open-circuit voltage of 0.85 V and show better long-term stability. Additionally, IE-PEDOT:PSS works effectively in 2-terminal all-perovskite tandem devices, resulting in an improved efficiency of 23.5% and high reproducibility.

14 SOLAR ENERGY↗
DOE OSTI2020

Solid-State Ionic Rectification in Perovskite Nanowire Heterostructures

Halide perovskites have attracted increasing research attention with regard to their potential for optoelectronic applications. Because of its low activation energy, ion migration is implicated in the long-term stability and many unusual transport behaviors of halide perovskite devices. However, direct observation and precise control of the ionic transport in halide perovskite crystals remain challenging. Here, we have designed an axial CsPbBr 3 -CsPbCl 3 nanowire heterostructure, in which electric-field-induced halide ion migration was clearly visualized and quantified. We demonstrated that halide ion migration is dependent on the applied electric field and exhibits ionic rectification in this solid-state system, which is due to the nonuniform distribution of the ionic vacancies in the nanowire that results from a competition between electrical screening and their creation/destruction at the electrodes' interfaces. Furthermore, the asymmetric heterostructure characteristics add an additional knob to control the ion movement in the design of advanced ionic circuits with halide perovskites as building blocks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗