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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. Here, this letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10 16 ion/cm 2 at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC{sub 70}BM, and incorporated the different HTL materials PEDOT:PSS, MoO{sub x} and V{sub 2}O{sub 5}. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T{sub 80} lifetime of 14 500 h.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Demagnetization of Nd 2 Fe 14 B, Pr 2 Fe 14 B, and Sm 2 Co 17 Permanent Magnets in Spallation Irradiation Fields

Prompted by the need for radiation-resistant permanent magnets for insertion devices (IDs) of high-brilliance next-generation synchrotrons such as the National Synchrotron Light Source II, the demagnetization of Nd 2 Fe 14 B and Pr 2 Fe 14 B was studied after exposure to a mixed irradiating field. Degradation and damage of the permanent magnetic material by components of electromagnetic showers induced in magnets by intense high-energy electron beams will alter the magnetic field structure of the IDs. Plate-like Nd 2 Fe 14 B magnets were irradiated to 1.8 Grad dose and were evaluated against Pr 2 Fe 14 B magnets irradiated to a lower dose of 20 Mrad. In addition, annular Sm 2 Co 17 and Nd 2 Fe 14 B magnets integrated within a ferrofluidic feedthrough (FFFT) rotary seal were also irradiated to dose levels of 2 Grad for Sm 2 Co 17 and 20 Mrad for Nd 2 Fe 14 B. Post-irradiation measurements of the magnetic intensity revealed that severe demagnetization exceeding 85% occurs in Nd 2 Fe 14 B magnets after only 50 Mrad dose and over 87% for Pr 2 Fe 14 B after 10 Mrad dose. The annular-shaped Sm 2 Co 17 magnets of the FFFTs were almost insensitive to irradiation up to a dose of 2 Grad. Annular-shaped Nd 2 Fe 14 B magnets also showed resistance to demagnetization, a direct consequence of the annular shape which is characterized by the removal of the stronger demagnetizing field present at the center of a disk-like magnet. As a result, the sensitivity of boron-based permanent magnets to neutron energy (thermal versus fast) was also assessed via specifically designed experiments and discussed.

43 PARTICLE ACCELERATORS↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55, to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of CMOS and P-MOS devices shielded in front over 2 pi steradian by flat slabs of aluminum of 40, 80, 150, and 300 mils (1.02, 2.04, 3.81, and 7.62 mm) thicknesses, and by a practically infinite shield in the back. Initial results from the CREM experiment are reported. Predictions of radiation damage to CMOS devices are based on standard environment models and computational techniques. Measured space damage is smaller than predicted by about a factor of 2-3 for thin shields but agrees well with predictions for thicker shields. It is not clear at this time how the trapped particle environment models or the computational methods should be modified in order to achieve better agreement between experimental results and predicted damage curves.

Cliff, R. A.↗
DOE OSTI2019

Josephson Fluxonic Diode as a Pixel with Radiation Pumping of Fluxons in Gigahertz Imaging Systems

Josephson fluxonic diode (JFD) has been studied and applied for gigahertz (GHz) imaging using the principle of generation of fluxons by an irradiated standing wave at gigahertz frequencies. In this device, the creation, movement, and dynamics of fluxon and anti-fluxon pairs as the magnetic field carriers in JFD have been examined in two separate modes of operation including forward and reverse bias. In both modes, the high nonlinearity feature is used for electromagnetic radiation detection. To verify this capability, an experimentally fabricated JFD based on Nb/AlO{sub x}/Nb trilayer technology has been deployed without being coupled to any patterned antenna or frontal optics. Also, the junction design parameters and DC biasing values have accordingly been chosen to achieve the best sensitivity to gigahertz radiations. As a result, the device well respond to the specified frequency, and an image is acquired at 71 GHz which proves the potential application of JFD as a pixel of the millimeter wave imaging systems with the direct detection mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Migration energy barriers and diffusion anisotropy of point defects on tungsten surfaces

We report tungsten is one of the most promising candidates for plasma-facing materials in future fusion devices, owing to its high performance under extreme irradiation conditions. However, irradiation-induced surface morphology varies significantly, depending on the irradiation type, fluence, and flux. Therefore, it is critical to examine the dynamics of point defects on tungsten (W) surfaces to understand how irradiation affects surface morphology. In this study, we employ the Self-Evolving Atomistic Kinetic Monte Carlo (SEAKMC) method to search for potential migration paths of point defects on W (1 0 0), (1 1 0) and (1 1 1) surfaces. The first-principles calculations are then used to accurately determine the migration energy barriers. The obtained paths and barriers are incorporated into a kinetic Monte Carlo (KMC) model to determine trajectories and diffusivities, which are described by diffusion tensors to demonstrate their anisotropic features. Multiple diffusion mechanisms have been identified on different surfaces, with various anisotropy factors. Particularly, point defects on the W (1 1 0) surface have the highest diffusivities, with anisotropy factors independent of temperatures. In comparison, the anisotropy of the W (1 0 0) surface decreases as temperature increases, while the W (1 1 1) surface is isotropic for point defects. This study provides insights into defect transport properties on different surfaces, which are essential for understanding the early stages of irradiation-induced microstructural evolutions and surface morphology of tungsten.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Vacuum System and Modeling for the Materials Plasma Exposure Experiment

Understanding the science of plasma-material interactions (PMI) is essential for the future development of fusion facilities. The design of divertors and first walls for the next generation of long-pulse fusion facilities, such as a Fusion Nuclear Science Facility (FNSF) or a DEMO, requires significant PMI research and development. In order to meet this need, a new linear plasma facility, the Materials Plasma Exposure Experiment (MPEX) is proposed, which will produce divertor relevant plasma conditions for these next generation facilities. The device will be capable of handling low activation irradiated samples and be able to remove and replace samples without breaking vacuum. A Target Exchange Chamber (TEC) which can be disconnected from the high field environment in order to perform in-situ diagnostics is planned for the facility as well. The vacuum system for MPEX must be carefully designed in order to meet the requirements of the different heating systems, and to provide conditions at the target similar to those expected in a divertor. An automated coupling-decoupling (“autocoupler”) system is designed to create a high vacuum seal, and will allow the TEC to be disconnected without breaking vacuum in either the TEC or the primary plasma materials interaction chamber. This autocoupler, which can be actuated remotely in the presence of the high magnetic fields, has been designed and prototyped, and shows robustness in a variety of conditions. The vacuum system has been modeled using a simplified finite element analysis, and indicates that the design goals for the pressures in key regions of the facility are achievable.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Analysis of CdTe photovoltaic cells for ambient light energy harvesting

This paper investigates the suitability of CdTe photovoltaic cells to be used as power sources for wireless sensors located in buildings. We fabricate and test a CdTe photovoltaic cell with a transparent conducting oxide front contact that provides for high photocurrents and low series resistance at low light intensities and measures the photovoltaic response of this cell across five orders of magnitude of AM1.5G light intensity. Efficiencies of 10% and 17.1% are measured under ~1 W m -2 AM1.5G and LED irradiance respectively, the highest values for a CdTe device under ambient lighting measured to date. We use our results to assess the potential of CdTe for internet of things devices from an optoelectronic, as well as a techno-economic perspective, considering its established manufacturing know-how, potential for low-cost, proven long-term stability and issues around the use of cadmium.

14 SOLAR ENERGY↗
DOE OSTI2018

Quantitative Electroluminescence Imaging Analysis for Performance Estimation of PID-Influenced PV Modules

An empirical method for estimating relative power losses caused by potential-induced degradation (PID) for p-type solar cells and modules using quantitative electroluminescence (EL) analysis (QELA) is presented. First, EL images are corrected for camera- and perspective distortion. The relative power loss map is then calculated from the logarithmic ratio of two EL images, taken either before and after PID degradation or at different applied currents. Only the cell average of the resulting power loss map is evaluated. The highest power loss across each string is averaged to obtain the overall power loss. Consequently, for modules with three strings, three cells are averaged. The resulting power loss depends on the current applied. The conversion to equivalent irradiance allows for comparison of measured and estimated device performance. The analysis of roughly 2000 EL images and related current-voltage (I-V) curves indicates a good agreement between flash-test-measured and performance estimated using QELA. A relative root mean square error of 1-3% can be achieved.

14 SOLAR ENERGY↗
DOE OSTI2016

Implosion dynamics of a megampere wire-array Z-pinch with an inner low-density foam shell at the Angara-5-1 facility

The implosion dynamics of a pinch with a highly inhomogeneous initial axial distribution of the load mass was studied experimentally. A cascade array consisting of a double nested tungsten wire array and a coaxial inner cylindrical shell located symmetrically with respect to the high-voltage electrodes was used as a load of the Angara-5-1 high-current generator. The cylindrical foam shell was half as long as the cathode− anode gap, and its diameter was equal to the diameter of the inner wire array. It is shown experimentally that two stages are typical of the implosion dynamics of such a load: the formation of two separate pinches formed as a result of implosion of the wire array near the cathode and anode and the subsequent implosion of the central part of the load containing the cylindrical foam shell. The conditions are determined at which the implosion of the central part of the pinch with the foam cylinder is preceded by intense irradiation of the foam with the soft X-ray (SXR) emission generated by the near-electrode pinches and converting it into the plasma state. Using such a load, which models the main elements of the scheme of a dynamic hohlraum for inertial confinement fusion, it is possible to increase the efficiency of interaction between the outer accelerated plasma sheath and the inner foam shell by preionizing the foam with the SXR emission of the near-electrode pinches.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation

The influence of the effective concentration of an impurity specifying the conduction type of the base region and the base thickness on the radiation resistance of transistor temperature sensors is investigated. The dependences of the forward voltage drop at the emitter transistor junction and current amplification factor on the magnitude of electron, neutron, and γ-quanta flows are revealed. It is found that degradation of the forward voltage drop under the effect of ionizing radiation begins at doses higher by almost two orders of magnitude than the current amplification factor depending on the transistor’s design features. The reproducibility of the temperature-sensitive parameter, which increases the yield percentage of suitable devices, increases after annealing of the electron-irradiated structures.

36 MATERIALS SCIENCE↗
NASA NTRS1969

Thermochromic displays

Thermochromic materials feasibility for applications in CRT display devices, observing reversible color changes during electron beam irradiation

Burkowski, R. P.↗
NASA NTRS1992

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 n/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time.

Frasca, A. J.↗
NASA NTRS1992

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 pn/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time.

Frasca, A. J.↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRS2017

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Schottky Diodes↗