Low Overhead Security Isolation using Lightweight Kernels and TEEs.
Abstract not provided.
Lange, John↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.
36 MATERIALS SCIENCE↗
BeyondPlanck I. Global Bayesian analysis of the Planck Low Frequency Instrument data
We describe the BeyondPlanck project in terms of motivation, methodology and main products, and provide a guide to a set of companion papers that describe each result in fuller detail. Building directly on experience from ESA's Planck mission, we implement a complete end-to-end Bayesian analysis framework for the Planck Low Frequency Instrument (LFI) observations. The primary product is a joint posterior distribution P(omega|d), where omega represents the set of all free instrumental (gain, correlated noise, bandpass etc.), astrophysical (synchrotron, free-free, thermal dust emission etc.), and cosmological (CMB map, power spectrum etc.) parameters. Some notable advantages of this approach are seamless end-to-end propagation of uncertainties; accurate modeling of both astrophysical and instrumental effects in the most natural basis for each uncertain quantity; optimized computational costs with little or no need for intermediate human interaction between various analysis steps; and a complete overview of the entire analysis process within one single framework. As a practical demonstration of this framework, we focus in particular on low-l CMB polarization reconstruction, paying special attention to the LFI 44 GHz channel. We find evidence of significant residual systematic effects that are still not accounted for in the current processing, but must be addressed in future work. These include a break-down of the 1/f correlated noise model at 30 and 44 GHz, and scan-aligned stripes in the Southern Galactic hemisphere at 44 GHz. On the Northern hemisphere, however, we find that all results are consistent with the LCDM model, and we constrain the reionization optical depth to tau = 0.067 +/- 0.016, with a low-resolution chi-squared probability-to-exceed of 16%. The marginal CMB dipole amplitude is 3359.5 +/- 1.9 uK. (Abridged.)
Andersen, KJ↗
Role of hot electrons in shock ignition constrained by experiment at the National Ignition Facility
Shock ignition is a scheme for direct drive inertial confinement fusion that offers the potential for high gain with the current generation of laser facility; however, the benefits are thought to be dependent on the use of low adiabat implosions without laser–plasma instabilities reducing drive and generating hot electrons. A National Ignition Facility direct drive solid target experiment was used to calibrate a 3D Monte Carlo hot-electron model for 2D radiation-hydrodynamic simulations of a shock ignition implosion. The α = 2.5 adiabat implosion was calculated to suffer a 35% peak areal density decrease when the hot electron population with temperature T ℎ = 55 keV and energy E ℎ = 13 kJ was added to the simulation. Optimizing the pulse shape can recover ~1/3 of the peak areal density lost due to a change in shock timing. Here, despite the harmful impact of laser–plasma instabilities, the simulations indicate shock ignition as a viable method to improve performance and broaden the design space of near ignition high adiabat implosions.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Tailoring spectral properties for entangled photon generation
The linear intensity scaling of entangled two-photon absorption (ETPA) offers a fundamental mechanism to enable nonlinear optical spectroscopy and microscopy under a substantially lower excitation power than is currently feasible. However, the long data acquisition time and low signal-to-noise ratio in reported ETPA-based spectroscopic and microscopic studies prevent its widespread application. To gain the full potential of this novel quantum light approach, it is essential to optimize entangled photon generation for significantly enhanced ETPA responses. Here, we report a new quantum light source by combining entangled photon generation with free-space femtosecond pump-pulse shaping. Here, through measurements of singles and coincidence counts by varying the patterns applied to a spatial light modulator to control the spectral widths of the pump pulses, we reveal strong dependence of the singles and coincidence count rates as well as their ratios on the spectral widths of pump pulses. An optimal spectral width for the highest ratios between the coincidence photon and the signal or idler photon count rates is also determined. Identification of such optimal spectral widths for entangled photon generation in the presence of postgeneration spectral selection makes this quantum light source a promising choice for ETPA-based spectroscopy and imaging.
Photon pairs & parametric down-conversion↗
Impact of Sugarcane Cultivation on C Cycling in Southeastern United States Following Conversion From Grazed Pastures
ABSTRACT The expansion of sugarcane, a tropical high‐yielding feedstock, will likely reshape the Southeastern United States (SE US) bioenergy landscape. However, the sustainability of sugarcane, particularly as it displaces grazed pastures, is highly uncertain. Here, we investigated how pasture conversion to sugarcane in subtropical Florida impacts net ecosystem CO 2 exchange (NEE) and net ecosystem carbon (C) balance (NECB). Measurements were made over three full growth cycles (> 3 years) in sugarcane—plant cane, PC; first ratoon cane, FRC; second ratoon cane, SRC—and in improved (IM) and semi‐native (SN) pastures, which make up ca. 37% of agricultural land in the region. Immediately following conversion, PC was a stronger net source of CO 2 than pastures, indicating the importance of CO 2 losses related to land disturbance. Sugarcane, however, shifted to a strong net sink of CO 2 after first regrowth, and overall sugarcane was a stronger net CO 2 sink than pastures. Both stand age and low water availability during cane emergence and tillering substantially decreased its potential gross CO 2 uptake. Accounting for all C gains and removals (i.e., NECB), greater frequency of burn events and repeated harvest increased removals and overall made sugarcane a stronger C source relative to pastures despite substantial C inputs from the previous land use and a stronger CO 2 sink strength. Time since conversion substantially reduced C losses from sugarcane, and the NECB of SRC was similar to that of IM pasture but lower than that of SN pasture, indicating a rapid shift in the NECB of cane. We conclude that the C‐balance implications following conversion will depend on the proportion of IM versus SN pastures converted to sugarcane. Furthermore, our findings suggest that no‐burn harvest management strategies will be critical to the development of a sustainable bioenergy landscape in SE US.
Gomez‐Casanovas, Nuria↗
Solid-state laser refrigeration of core-shell polystyrene microspheres
Microlaser designs based on the coupling of whispering gallery modes (WGMs) with the upconversion processes which take place within lanthanide-doped nanoparticles (UCNPs) have been demonstrated and shown to have many valuable qualities, such as high Q factors and low lasing thresholds. One obstacle that these microlaser designs still face is the challenges caused by photothermal heating of the gain medium, which could be solved through the design of a radiation balanced microlaser. In this work, WGM microresonators composed of 5 µm diameter polystyrene spheres are fabricated with a layer of Yb3+-doped NaYF4 UCNPs in order to test if the anti-Stokes cooling properties of the UCNPs can cool the microresonator and its environment under laser irradiation. We find via calibrated mean fluorescence spectroscopy that the UCNPs can cool their local environment by as much as 23 °C and significantly reduce the heating of the aqueous environment surrounding the microresonator, showing promise for inclusion in a design for a radiation balanced microlaser.
whispering gallery modes, optical refrigeration, m↗
High power chip-scale laser
The lack of high-power integrated lasers has been limiting silicon photonics. Despite much progress in chip-scale laser integration, power output remains below levels required for key applications due to low energy efficiency at high pumping currents. Here we break this power limitation by coupling a broad-area multimode gain chip to a silicon-nitride ring resonator and single-mode filter. The resulting optical feedback causes the multimode-gain chip to concentrate its power into a single highly coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these metrics while maintaining a small footprint of 3 mm 2 .
Antman, Yair↗
ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project (Final Report)
Electricity accounts for nearly 40% of the energy generated in the United States, of which 65% is lost to electrical system inefficiency before reaching end-use sectors. Power electronics will play a growing role in this distribution and end-use, with up to 80% of electricity estimated to pass through power electronics from generation to consumption by 2030. This gives technical improvements in power electronics enormous potential to drive efficiency gains throughout the U.S. economy. Current Si-based power architectures including MOSFETs and IGBTs are limited by high losses, low switching frequency, and poor high-temperature performance. Given the material properties of GaN, devices can exhibit a given turn-on resistance and breakdown voltage with a minute fraction of the area of a Si device—all with higher switching speeds. While n-type doping of III-nitrides has reached a high level of maturity and integration into commercialized products, p-type doping presents distinct challenges that requires continued research. The success of the next generation of GaN-based power devices depends in large part on the ability to form selective-area p-type regions, which can be accomplished by ion implantation of the prevailing acceptor dopant, Mg. This approach is relatively inexpensive and is a fab-ready processing step for creation of current-generation power electronic devices including BJTs, IGBTs, and diode rectifiers. However, ion implantation induces lattice damage and creates point defects within the material, which negatively impacts dopant activation annealing. These forms of damage may be removed by high-temperature annealing, however short annealing time and higher pressures are required to prevent decomposition of the material. We approach this challenge through an innovative combination of approaches toward obtaining high-conductivity p-type GaN. By the novel employment of a gyrotron, a microwave source that can be shaped into a highly localized beam to dissipate very high power in a semiconductor target, a wafer of GaN can be annealed in short (<2 s) ‘pulses’ at temperatures of 1450 °C (2640 °F) to achieve p-type activation without appreciable surface degradation. The p-type activation of Mg-implanted GaN can be further aided by co-implantation with N, believed to enhance the removal of point defects that compensate the acceptors dopant. Elevation to such high temperatures for even a short time induces degradation of GaN-to overcome, we have implemented additional measures to retain high-quality crystalline GaN while removing implant damage and activating Mg dopant. A bilayer cap of AlN is deposited by a combination of chemical and physical vapor deposition to protect the GaN surface. To prevent decomposition of GaN loss of N during annealing, a custom vessel—to contain pressurized N while allowing injection of microwave energy—is employed. By detailed study of the interaction of various measures that are implemented to protect the sample surface (GaN), activate the implanted dopants, and mitigate damage of the lattice heating damage during annealing, we are able to achieve p-type GaN and observe recovery of the crystal and removal of substantial density of defects created during the implantation process.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon
This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.
Duan, Jianan (ORCID:0000000177104287)↗
Large two-photon cross sections and low-threshold multiphoton lasing of CdS/CdSe/CdS quantum shells
Colloidal quantum shells are spherical semiconductor quantum wells, which have shown strong promise as optical materials, particularly in classes of experiments requiring multiple excitons. The two-photon properties of CdS/CdSe/CdS quantum shell samples are studied here to demonstrate large non-linear absorption cross-sections while retaining advantageous multiexciton physics conferred by the geometrical structure. The quantum shells have large two-phonon cross sections (0.4–7.9 × 10 6 GM), which highlights their potential use in upconversion imaging in which large per particle two-photon absorption is critical. Time-resolved measurements confirmed that the quantum shells have long biexciton lifetime (>10 ns in the largest core samples reported here) and large gain bandwidth (>300 meV). The combination of these attributes with large two-photon cross sections makes the CdS/CdSe/CdS quantum shells excellent gain media for two-photon excitation. With a broad gain bandwidth and long gain lifetime, quantum shell solids support multimodal amplified spontaneous emission from excitons, biexcitons, and higher excited states. In conclusion, thresholds for amplified spontaneous emission and lasing, which are as low as 1 mJ cm −2 , are comparable to, or lower than, the thresholds reported for other colloidal materials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Avalanche gain and its effect on energy resolution in GEM-based detectors
Here, we present avalanche gain and associated resolution measurements recorded with a 4 He:CO 2 (70:30) gas mixture and pure SF 6 , a Negative Ion (NI) gas. SF 6 is of particular interest to the directional dark matter detection community, as its low thermal diffusion helps to retain recoil ionization track features over long drift lengths. With the aid of a general form of the reduced first Townsend coefficient (RFTC), multiple GEM-based detector data sets are used to study the high-gain behavior of the 4 He:CO 2 gas mixture. The high-gain data is well described purely in terms of the reduced electric field strength and the number of GEMs, and the robust relationship between the RFTC and the average, reduced, electric field strength across the GEMs is emphasized. The associated (pulse-height) resolution measurements are used to discuss the variance of the avalanche distribution and to describe and estimate the lower limits of energy resolution one should expect to measure using a simple relationship with the RFTC. In the end, a description of avalanche gain, its effect on energy resolution, and the contributing experimental parameters in GEM-based detectors is developed over a broad parameter space for further use.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Performance Evaluation of Vertical Federated Machine Learning Against Adversarial Threats on Wide-Area Control System: Preprint
Federated machine learning (FL) is gaining significant popularity to develop cybersecurity solutions in power grids because of its advanced capability to support decentralized data handing at local devices, its privacy preservation, and its low-bandwidth requirement. However, the evolving adversarial machine learning (AML) threats raise significant concerns for the cybersecurity of FL architectures. The FL-based split neural network (SplitNN) achieves high performance through the decentralized training of local neural network models while preserving data privacy across multiple entities. In this paper, we propose a methodology for evaluating the performance of a vertical FLbased anomaly detector against different types of AML attacks, including denial-of-service attacks, adversarial data injection attacks, and replay attacks on the trained local models deployed in the grid network. For a case study, we consider the modified IEEE 13-bus system, and we develop SplitNN-based binary and multiclass classification models to detect, locate, and identify different types of data integrity attacks on the volt-watt control with two pooling layers: maximum pooling and AvgPool. Our experimental results, computed through performance metrics, reveal that the severity of these AML attacks varies with the integrated pooling mechanism, the type of classification model, and the nature of the cyberattack. Further, the AML attacks negatively impacted the prediction time per sample for the pretrained SplitNN during the online testing.
adversarial threats↗
One-dimensional hydrodynamic simulations of low convergence ratio direct-drive inertial confinement fusion implosions
Explore the source record for details and available documents.
Physics - Plasma physics↗
Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics
Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
A single-zone zero-dimensional study of HCCI combustion of methanol dehydration products to enable ignition of direct-injected methanol
Methanol is an alternative fuel gaining traction in the maritime sector. Its direct adoption, however, is accompanied by a unique set of technical challenges, such as low cetane number and high latent heat of vaporization. An approach to overcome these challenges is being developed at the US Department of Energy’s Oak Ridge National Laboratory, where onboard generation of dimethyl ether (DME) via catalytic dehydration of methanol can be used to assist in the mixing controlled combustion of direct-injected (DI) methanol. The generated mixture from this dehydration process can be premixed with intake air to condition the cylinder via. homogeneous charge compression ignition (HCCI) for subsequent DI methanol. In this preliminary work, various catalyst or reactor conversion efficiencies were simulated (using bottles) at constant DME and water flow at low load on a single-cylinder marine-variant of a CAT® C18 18 L engine with a 145 mm bore. To substantiate the experimental findings, a zero-dimensional engine model was developed in Cantera using a DME mechanism with 79 species and 658 reactions. Results presented include experimental and simulation heat release rate comparisons, species evolution information, and constant volume ignition delay (ID) for DI methanol with and without background species from HCCI of the premixed products from different reactor efficiencies. The results suggest that thermal effects dominate the DI methanol ignition process, and this work provides a chemical kinetic foundation or guideline for developing future control schemes.
Tyrewala, Daanish [ORNL] (ORCID:0000000208599324)↗
Dynamic signatures of spin-lattice coupling in the layered ferrimagnet Mn 3 Si 2 Te 6
Magnetic van der Waals (vdW) materials exhibit a profound interconnectedness between their various degrees of freedom, pointing to a wealth of potential applications in low-power and high-speed spintronic devices. Recently, light-matter interactions have been leveraged as robust, dynamic pathways to gain control over the properties of vdW magnets through the use of ultrafast pulses of light. Here, we utilize ultrafast photoexcitation to drive coherent lattice oscillations in the layered ferrimagnetic crystal Mn 3 Si 2 Te 6 , which significantly stiffen below the magnetic ordering temperature. We suggest that this is due to an exchange-mediated contraction of the lattice, stemming from strong magneto-structural coupling in this material. Furthermore, simulations of the transient incoherent response uncover the critical role of the spin-mediated electronic relaxation pathways. These results underscore the importance of spin-lattice coupling in vdW magnets and demonstrate a promising strategy for their dynamic optical control via their entangled degrees of freedom.
36 MATERIALS SCIENCE↗
Photoelectric absorption cross section of silicon near the bandgap from room temperature to sub-Kelvin temperature
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗