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NASA NTRS2000

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗

NASA NTRS2002

Technology Development Activities for the Space Environment and Its Effects On Spacecraft

Reducing size and weight of spacecraft, along with demanding increased performance capabilities, introduces many uncertainties in the engineering design community on how emerging microelectronics will perform in space. The engineering design community is forever behind on obtaining and developing new tools and guidelines to mitigate the harmful effects of the space environment. Adding to this complexity is the push to use Commercial-off-the-Shelf (COTS) and shrinking microelectronics behind less shielding and the potential usage of unproven technologies such as large solar sail structures and nuclear electric propulsion. In order to drive down these uncertainties, various programs are working together to avoid duplication, save what resources are available in this technical area and possess a focused agenda to insert these new developments into future mission designs. This paper will describe the relationship between the Living With a Star: Space Environment Testbeds Project and NASA's Space Environments and Effects (SEE) Program and their technology development activities funded as a result from the recent SEE Program's NASA Research Announcement.

Kauffman, Billy↗

NASA NTRS1994

Analytical Instrument

BEEM (Ballistic Electron Emission Microscopy) was invented at Jet Propulsion Laboratory's Center for Microelectronics Technology. It is a significant research instrument for microelectronics research because it is able to image underlying layers or interfaces of surface structures. A tiny current is injected into a metal layer and the electrons travel ballistically through the metal allowing the researcher to study the operation and performance of a structure. Other advantages include nondestructive imaging of barrier heights and electronic characterization of devices, as well as the potential to observe processes like molecular beam epitaxy (crystal growth) in situ.

Source record↗

NASA NTRS2002

Predictions for Radiation Shielding Materials

Radiation from galactic cosmic rays (GCR) and solar particle events (SPE) is a serious hazard to humans and electronic instruments during space travel, particularly on prolonged missions outside the Earth s magnetic fields. Galactic cosmic radiation (GCR) is composed of approx. 98% nucleons and approx. 2% electrons and positrons. Although cosmic ray heavy ions are 1-2% of the fluence, these energetic heavy nuclei (HZE) contribute 50% of the long-term dose. These unusually high specific ionizations pose a significant health hazard acting as carcinogens and also causing microelectronics damage inside spacecraft and high-flying aircraft. These HZE ions are of concern for radiation protection and radiation shielding technology, because gross rearrangements and mutations and deletions in DNA are expected. Calculations have shown that HZE particles have a strong preference for interaction with light nuclei. The best shield for this radiation would be liquid hydrogen, which is totally impractical. For this reason, hydrogen-containing polymers make the most effective practical shields. Shielding is required during missions in Earth orbit and possibly for frequent flying at high altitude because of the broad GCR spectrum and during a passage into deep space and LunarMars habitation because of the protracted exposure encountered on a long space mission. An additional hazard comes from solar particle events (SPEs) which are mostly energetic protons that can produce heavy ion secondaries as well as neutrons in materials. These events occur at unpredictable times and can deliver a potentially lethal dose within several hours to an unshielded human. Radiation protection for humans requires safety in short-term missions and maintaining career exposure limits within acceptable levels on future long-term exploration missions. The selection of shield materials can alter the protection of humans by an order of magnitude. If improperly selected, shielding materials can actually increase radiation damage due to penetration properties and nuclear fragmentation. Protecting space-borne microelectronics from single event upsets (SEUs) by transmitted radiation will benefit system reliability and system design cost by using optimal shield materials. Long-term missions on the surface of the Moon or Mars will require the construction of habitats to protect humans during their stay. One approach to the construction is to make structural materials from lunar or Martian regolith using a polymeric material as a binder. The hydrogen-containing polymers are considerably more effective for radiation protection than the regolith, but the combination minimizes the amount of polymer to be transported. We have made composites of simulated lunar regolith with two different polymers, LaRC-SI, a high-performance polyimide thermoset, and polyethylene, a thermoplastic.

Kiefer, Richard L.↗

NASA NTRS2003

Space, Atmospheric, and Terrestrial Radiation Environments

The progress on developing models of the radiation environment since the 1960s is reviewed with emphasis on models that can be applied to predicting the performance of microelectronics used in spacecraft and instruments. Space, atmospheric, and ground environments are included. It is shown that models must be adapted continually to account for increased understanding of the dynamics of the radiation environment and the changes in microelectronics technology. The IEEE Nuclear and Space Radiation Effects Conference is a vital forum to report model progress to the radiation effects research community.

Barth, Janet L.↗

NASA NTRS2003

Technology Development Activities for the Space Environment and its Effects on Spacecraft

Reducing size and weight of spacecraft, along with demanding increased performance capabilities, introduces many uncertainties in the engineering design community on how emerging microelectronics will perform in space. The engineering design community is forever behind on obtaining and developing new tools and guidelines to mitigate the harmful effects of the space environment. Adding to this complexity is the push to use Commercial-off-the-shelf (COTS) and shrinking microelectronics behind less shielding and the potential usage of unproven technologies such as large solar sail structures and nuclear electric propulsion. In order to drive down these uncertainties, various programs are working together to avoid duplication, save what resources are available in this technical area and possess a focused agenda to insert these new developments into future mission designs. This paper will describe the relationship between the Living With a Star (LWS): Space Environment Testbeds (SET) Project and NASA's Space Environments and Effects (SEE) Program and their technology development activities funded as a result from the recent SEE Program's NASA Research Announcement.

Kauffman, Billy↗

NASA NTRS2011

Space Radiation Effects and Reliability Consideration for the Proposed Jupiter Europa Orbiter

The proposed Jupiter Europa Orbiter (JEO) mission to explore the Jovian moon Europa poses a number of challenges. The spacecraft must operate for about seven years during the transit time to the vicinity of Jupiter, and then endure unusually high radiation levels during exploration and orbiting phases. The ability to withstand usually high total dose levels is critical for the mission, along with meeting the high reliability standards for flagship NASA missions. Reliability of new microelectronic components must be sufficiently understood to meet overall mission requirements.The proposed Jupiter Europa Orbiter (JEO) mission to explore the Jovian moon Europa poses a number of challenges. The spacecraft must operate for about seven years during the transit time to the vicinity of Jupiter, and then endure unusually high radiation levels during exploration and orbiting phases. The ability to withstand usually high total dose levels is critical for the mission, along with meeting the high reliability standards for flagship NASA missions. Reliability of new microelectronic components must be sufficiently understood to meet overall mission requirements.

semiconductor devices↗

NASA NTRS2014

AE (Acoustic Emission) for Flip-Chip CGA/FCBGA Defect Detection

C-mode scanning acoustic microscopy (C-SAM) is a nondestructive inspection technique that uses ultrasound to show the internal feature of a specimen. A very high or ultra-high-frequency ultrasound passes through a specimen to produce a visible acoustic microimage (AMI) of its inner features. As ultrasound travels into a specimen, the wave is absorbed, scattered or reflected. The response is highly sensitive to the elastic properties of the materials and is especially sensitive to air gaps. This specific characteristic makes AMI the preferred method for finding "air gaps" such as delamination, cracks, voids, and porosity. C-SAM analysis, which is a type of AMI, was widely used in the past for evaluation of plastic microelectronic circuits, especially for detecting delamination of direct die bonding. With the introduction of the flip-chip die attachment in a package; its use has been expanded to nondestructive characterization of the flip-chip solder bumps and underfill. Figure 1.1 compares visual and C-SAM inspection approaches for defect detection, especially for solder joint interconnections and hidden defects. C-SAM is specifically useful for package features like internal cracks and delamination. C-SAM not only allows for the visualization of the interior features, it has the ability to produce images on layer-by-layer basis. Visual inspection; however, is only superior to C-SAM for the exposed features including solder dewetting, microcracks, and contamination. Ideally, a combination of various inspection techniques - visual, optical and SEM microscopy, C-SAM, and X-ray - need to be performed in order to assure quality at part, package, and system levels. This reports presents evaluations performed on various advanced packages/assemblies, especially the flip-chip die version of ball grid array/column grid array (BGA/CGA) using C-SAM equipment. Both external and internal equipment was used for evaluation. The outside facility provided images of the key features that could be detected using the most advanced C-SAM equipment with a skilled operator. Investigation continued using in-house equipment with its limitations. For comparison, representative X-rays of the assemblies were also gathered to show key defect detection features of these non-destructive techniques. Key images gathered and compared are: Compared the images of 2D X-ray and C-SAM for a plastic LGA assembly showing features that could be detected by either NDE technique. For this specific case, X-ray was a clear winner. Evaluated flip-chip CGA and FCBGA assemblies with and without heat sink by C-SAM. Only the FCCGA package that had no heat sink could be fully analyzed for underfill and bump quality. Cross-sectional microscopy did not revealed peripheral delamination features detected by C-SAM. Analyzed a number of fine pitch PBGA assemblies by C-SAM. Even though the internal features of the package assemblies could be detected, C-SAM was unable to detect solder joint failure at either the package or board level. Twenty times touch ups by solder iron with 700degF tip temperature, each with about 5 second duration, did not induce defects to be detected by C-SAM images. Other techniques need to be considered to induce known defects for characterization. Given NASA's emphasis on the use of microelectronic packages and assemblies and quality assurance on workmanship defect detection, understanding key features of various inspection systems that detect defects in the early stages of package and assembly is critical to developing approaches that will minimize future failures. Additional specific, tailored non-destructive inspection approaches could enable low-risk insertion of these advanced electronic packages having hidden and fine features.

Ghaffarian, Reza↗

NASA NTRS2012

Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.

reliability↗

NASA NTRS2016

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

This presentation provides an overview of the NEPP Program. The NEPP Mission is to provide guidance to NASA for the selection and application of microelectronics technologies; Improve understanding of the risks related to the use of these technologies in the space environment; Ensure that appropriate research is performed to meet NASA mission assurance needs. NEPP's Goals are to provide customers with appropriate and cost-effective risk knowledge to aid in: Selection and application of microelectronics technologies; Improved understanding of risks related to the use of these technologies in the space environment; Appropriate evaluations to meet NASA mission assurance needs; Guidelines for test and application of parts technologies in space; Assurance infrastructure and support for technologies in use by NASA space systems.

parts assurance↗

NASA NTRS2016

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

Technology Evaluation↗

NASA NTRS2016

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

NASA Electronic Parts and Packaging (NEPP) Program↗

NASA NTRS1995

Clementine Engineering Experiments Program.

Spacecraft must survive and operate reliably in the space environment for long periods of time. Radiation, temperature variations, spacecraft charging, surface contamination, and micrometeoroids/space debris all present environmental challenges to spacecraft missions. The environmental issues associated with these effects require in-situ space experiments to properly quantify the environment and its effects. To obtain data on specific microelectronic and sensor systems in the space environment, several engineering experiments were developed for the Clementine spacecraft and the Clementine lunar transfer booster or Interstage Adapter Satellite (ISAS). These platforms allowed testing of advanced spacecraft microelectronic and sensor devices in a lunar transfer orbit that intersects Earth's radiation belts and debris environment and in interplanetary space where direct exposure to solar flares, Galactic Cosmic Rays, and micrometeoroids was possible. A suite of experiments was developed by the Naval Research Laboratory (NRL), the Jet Propulsion Laboratory (JPL), NASA Langley Research Center (LaRC), the Aerospace Corporation, and NASA Goddard Space Flight Center (GSFC) to investigate in detail specific radiation and environmental reliability issues. This paper presents an introduction to the issues being investigated, the instruments provided for the mission, and the rationale for the engineering program.

Spacecraft↗

NASA NTRS1997

Recent Radiation Effects Activities at JPL: Coping with COTS

The rediation effects and testing programs in place at the Jet Propulsion Laboratory support the insertion of traditional, advanced, and emerging microelectronic and photonic technologies in NASA systems through research and testing that enhances the radiation hardness assurance (RHA) of these technologies. With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.

radiation↗

NASA NTRSDate not supplied

Learning From Failure: Boosting Cycling Endurance of Optical Phase Change Materials

Chalcogenide phase change materials (PCMs) are a unique class of compounds whose switchable optical and electronic properties have fueled an explosion of emerging applications in microelectronics and microphotonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of microelectronic memories, current PCM-based optical devices suffer from much inferior endurance. To understand the failure mechanisms limiting endurance of PCMs specifically in microphotonic devices, we have developed an on-chip resistive micro-heater platform and an automatic multi-modal characterization system to analyze cycling performance of optical PCMs. Reversible switching of large-area PCM devices over 50,000 cycles was demonstrated.

Optical phase change material↗

DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Thermoelectric coolers for high-power-density 3D electronics heat management

Future advancements in three-dimensional (3D) electronics require robust thermal management methodology. Thermoelectric coolers (TECs) are reliable and solid-state heat pumping devices with high cooling capacity that can meet the requirements of emerging 3D microelectronic devices. In this work, we first provide the design of TECs for electronics cooling using a computational model and then experimentally validate the main predictions. Key device parameters such as device thickness, leg density, and contact resistance were studied to understand their influence on the performance of TECs. Our results show that it is possible to achieve high cooling power density through optimization of TE leg height and packing density. Scaling of TECs is shown to provide ultra-high cooling power density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2022

A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance

Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic applications owing to their superior thickness scaling of ferroelectric stability and compatibility with mainstream semiconductors and fabrication processes. For broad-scale impact, long-term performance and reliability of devices using hafnia will require knowledge of the phases present and how they vary with time and use. In this Perspective article, the importance of phases present on device performance is discussed, including the extent to which specific classes of devices can tolerate phase impurities. Following, the factors and mechanisms that are known to influence phase stability, including substituents, crystallite size, oxygen point defects, electrode chemistry, biaxial stress, and electrode capping layers, are highlighted. Herein, discussions will focus on the importance of considering both neutral and charged oxygen vacancies as stabilizing agents, the limited biaxial strain imparted to a hafnia layer by adjacent electrodes, and the strong correlation of biaxial stress with resulting polarization response. Areas needing additional research, such as the necessity for a more quantitative means to distinguish the metastable tetragonal and orthorhombic phases, quantification of oxygen vacancies, and calculation of band structures, including defect energy levels for pure hafnia and stabilized with substituents, are emphasized.

36 MATERIALS SCIENCE↗