High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
In this work, p-channel 4H-SiC MOSFETs were fabricated and analyzed at high temperature. It is demonstrated that nitridation of the gate oxide enables enhancement mode operation in these devices. Nitrogen incorporation at the 4H-SiC/SiO2 interface by nitric oxide annealing reduces the interface trap density energetically located in the lower half of the 4H-SiC bandgap, resulting in viable high temperature p-channel devices. In the 27–300 °C temperature range, the threshold voltage decreases with increasing temperature, consistent with the reduction of occupied interface traps at higher temperatures. The hole channel mobility is weakly temperature dependent under strong inversion conditions. Hall measurements support that above the threshold voltage, the mobility is limited by surface roughness scattering. In weaker inversion, the channel conductivity is limited by interface hole trapping and Coulomb scattering. In addition, high temperature bias stress measurements confirm a temperature activated hole trapping under negative gate bias, which requires further investigations.