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At least 361 records · Page 20

Grayscale projection two-photon lithography using sub-diffraction motifs for ultrafast and precise nanoscale 3D printing

Rapid and high-fidelity nanoscale 3D printing is highly desirable, but it is difficult due to the tradeoff between speed and accuracy. Although optical projection techniques can massively scale up printing, fidelity is compromised due to the difficulty in precisely controlling the light dosage over the entire field. This challenge is typically addressed by using multiple projections, but it slows down printing. Here, we present grayscale projection two-photon lithography to overcome this tradeoff. Despite using a binary mask, it enables projecting more than 15,000 focal spots, each with independently tunable intensity. It advantageously leverages constraints imposed by optical diffraction to achieve grayscale tuning over the entire field at once. By directly tuning the focal spot intensities, we demonstrate suppression of proximity effects, compensation of non-uniform illumination, compensation of stitching artefacts, and rapid 3D printing with a single femtosecond pulse per layer. We demonstrate printing of nanowires as thin as 55 nm and achieve rates of 1.7 billion voxels/s and 215 mm 3 /hr.

36 MATERIALS SCIENCE↗

Development of improved higher-order correction for the NIF opacity spectrometer

X-ray opacity measurements on the National Ignition Facility (NIF) are in the process of reproducing earlier measurements from the Sandia Z Facility, in particular for oxygen and iron plasmas. These measurements have the potential to revise our understanding of the “solar problem” and of the hot degenerate Q class white dwarf structure by probing plasma conditions near the base of their convection zones. Accurate opacity measurements using soft x-ray Bragg crystal spectrometers require correction for higher-order diffraction effects. Extending prior work in this area [Dutra et al., Review of Scientific Instruments 93, 113527 (2022)], we have developed a new method to remove higher-order spectral components from NIF opacity spectrometer data. Furthermore, by modeling absorption and backlighting continuum spectra and subtracting the second- and third-order components from the measured data, we are able to perform this correction while avoiding imprinting first-order model line features onto the data.

79 ASTRONOMY AND ASTROPHYSICS↗

Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onset of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of a deep potential model for F and CF 2 etching of Si and SiO 2

An understanding of plasma-surface interactions at increasingly smaller scales is invaluable for the development of novel technologies and processing techniques. Molecular dynamics (MD) simulations can provide insights into atomic-scale interactions, though they are restricted by the availability of interatomic potentials. Machine learning methods, such as Deep Potential Molecular Dynamics (DeepMD), provide a systematic framework for the development of accurate and flexible ab initio-based models. In this work, we develop DeepMD models for the ion-enhanced etching of Si and SiO 2 by F and CF 2 radicals. We employ an active learning process to expand the data set on which the model is trained and demonstrate its effect on the model accuracy. The DeepMD results are compared to data from classical MD simulations and experiments. Physical sputtering yields of SiO 2 by Ar + ions show good agreement with previous simulation results using conventional interatomic potentials, though the predicted depth profiles are different. Etching yields are calculated as a function of ion energy and neutral to ion flux ratio for the Ar + ion-enhanced etching of SiO 2 and Si by F atoms, as well as for etching of SiO 2 by CF 2 radicals, showing reasonable agreement with experimental data. Finally, an ion-enhanced surface kinetic model is fitted to the DeepMD etch yields, and the fitted parameters are compared to quantities computed directly from DeepMD simulations. This study illustrates how molecular dynamics simulations using machine learning potentials can provide an accurate model of etching processes relevant to device manufacturing.

Kounis-Melas, Andreas [Princeton Univ., NJ (United↗

Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer

Inorganic-containing hybrid photoresists are critical for next-generation extreme ultraviolet (EUV) lithography and angstrom-era semiconductor miniaturization. However, associated conventional solution processing struggles to achieve ultrathin, uniform films with high conformality and compositional control, limiting overall patterning performance. Here, this study reports the systematic lithographic patterning characterization of an Al-based hybrid resist synthesized via vapor-phase molecular layer deposition (MLD), using the trimethylaluminum (TMA) metal precursor and the hydroquinone (HQ) aromatic organic linker. The resist supports both sub-20 nm high-resolution nanolithography and virtually infinite silicon plasma etch selectivity. Lithographic performance studied using electron beam lithography (EBL) as a proxy for EUV shows that, under an optimized process adopting post-exposure bake, the resist achieves the best resolution of 15.4 nm linewidth under stringent 1:1 line-space high-density patterning—limited only by the minimum beam size of the EBL system. The resist also shows wide dose latitude and balanced performance in resolution, roughness, and sensitivity. The infinite silicon etch selectivity, stemming from spontaneous aluminum oxyfluoride passivation layer formation, enables fabrication of micrometer-tall, 40 nm-wide silicon nanofin structures using only a ≈30 nm-thick resist layer, without no hard mask. These results highlight the potential of MLD-based hybrid resists for developing next-generation resist materials for micro/nanoelectronics manufacturing.

36 MATERIALS SCIENCE↗

THERMAL STRUCTURAL AND SHOCK EVENT EVALUATIONS OF THE FUELING PELLET INJECTION SYSTEM FOR ITER

The US is among seven partner nations in a collaborative effort to design, build, and demonstrate fusion’s ability to be a large-scale carbon free energy source. Each country has its own Domestic Agencies (DA) that contribute directly to the ITER project. US ITER, which is a DOE Office of Science project managed by Oak Ridge National Laboratory, is developing world class engineering solutions to the design, construction, and assembly of the burning plasma experiment that can demonstrate the scientific and technological feasibility of fusion. US ITER’s scope includes completing the preliminary and final design, qualifying materials and processes for manufacture and testing, executing manufacturing, and delivering the Fueling Pellet Injection System (FPIS) to the ITER site for assembly. The US-ITER FPIS system is designed to inject cryogenically frozen pellets of deuterium-tritium (D-T) into the plasma. The FPIS has two main functions: 1. Provide a steady supply of deuterium and tritium fuel, 2. Mitigating the impact of edge localized modes on the plasma facing components. The FPIS will have the capability to reside in three port cells within a tritium second barrier containment cask. Each pellet cask contains three flight tubes linking with penetrations on the torus cryopump housing and vacuum vessel (VV): two for the magnetic high field side (HFS) pellet injection and one for the magnetic low field side (LFS) pellet injection. This paper presents results of the thermal-structural analyses of the FPIS flight tube structural components when subjected to various loads such as electromagnetic (EM) loads, nuclear heating, seismic, and operational, and dynamic shock events. The resulting temperatures and stresses under combined conditions have been found to satisfy the design criteria to ensure safe and reliable operation of the FPIS flight tubes within the vacuum vessel.

Martinez, Oscar↗

Relativistic Laser Plasma Interactions At The Highest Intensities

High energy density science (HEDS) explores the nature of matter under extreme conditions of temperature and pressure. It is of fundamental importance and has many applications such as facilitating imaging with ions, neutrons, x-rays, and gamma rays with new applications being developed, including materials processing and medical therapies. In this project, we used high power, ultrashort pulse lasers to reach HEDS conditions. We have shown that low-cost, liquid crystal film based, double plasma mirror systems can be used to greatly improve laser pulse contrast while still maintaining high power and excellent spatial mode.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Advanced silver sheathed 2212/Ag wire for high field magnets

Commercial High Temperature Superconductors (HTS) are all tape shaped (widths > 10 times thickness), because achieving useful current densities required them to be processed into this form, even though this also makes it more problematic to use them in some important coil types. Our product is based on 2212 (Bi2Sr2CaCu2O8) and it is the only HTS that can be processed into high current density wire forms that are similar to proven low temperature superconductors (LTS), while surpassing them in field generating and operating temperature capability. Required now are higher current density, lower cost and longer length 2212 wires to enable broad utilization where HTS tape usage is problematic. In Phase II we developed vital cost-lowering process technology elements and we test-processed longer wires with the standard commercial design as baseline and benchmark for our lower cost, higher quality and longer piece length wire advances. By initial application of Jc-boosting wire features, these wires exhibited significant performance increases. This Phase IIA program has now developed and qualified these technologies for lower cost, higher quality and longer piece length manufacturing in combination with current density-boosting wire features, paving the way to manufacturing capability that is essential for cost-effective commercial utilization of 2212 wire. Technical areas included automated, high uniformity powder packing, advanced drawing, annealing, lubricant cleaning and filament bundling, followed by integration of higher current density wire features and process variations.

17 WIND ENERGY↗

Tokamak Disruption Simulation (Final Technical Report)

This was a multi-institutional project concerned with simulation of tokamak disruption – rapid termination of the plasma and confining magnetic field in a tokamak fusion reactor – with the aim of quantifying the physics associated with disruption mitigation. The PI’s role is as one of a group of computational scientists concerned with development of effective solution algorithms for the underlying models of magnetohydrodynamics and transport that represent the physical processes, and to develop techniques of uncertainty quantification for treating unknown aspects of the model such as boundary conditions and effects of impurities in plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗

Relativistic plasma effects and ion acceleration using Scarlet and ELI-NP

High energy density science (HEDS) explores the nature of matter under extreme conditions of temperature and pressure. It has wide ranging fundamental importance from understanding the physical structure of our planet to extreme phenomena in the cosmos. It also has many applications such as facilitating imaging with ions, neutrons, x-rays, gamma rays and more with new applications being developed, including materials processing and medical therapies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Preliminary Testing of a Continuous Cryopump for Primary Fusion Device Pumping and Direct Internal Recycling

Here, the concept of directly recirculating fusion machine exhaust gas, bypassing the tritium plant, to make fuel pellets was proposed in the 1990s and later termed direct internal recycling (DIR). In the DIR concept, the residual fusion fuel in the machine exhaust stream is separated from impurities locally and diverted directly to the fueling systems, bypassing isotopic separation and other processing equipment, and therefore significantly reducing the required size of the fuel processing plant, reducing plant inventory, and thus increasing the economic viability of fusion as an energy source. One concept for DIR consists of a series of cryogenic pumps to separate the impurities from the machine exhaust gas using different triple point temperatures and saturation curves of exhaust constituents. In this concept, the plasma exhaust is initially passed through an impurity trap operating at ~25–30 K to desublimate impurities such as hydrocarbons, argon, oxygen, and nitrogen. The resulting process stream will consist of DT fuel and helium. The process stream is then pumped by a continuous cryopump known as a “snail pump.” This pump is a steady-state continuous cryopump that desublimates all remaining exhaust gas constituents while allowing helium, a byproduct of the fusion reaction, to pass through. The helium is pumped to the tritium plant for processing while the desublimated material is continuously scraped off, heated up, and transported to the fueling system. This article will present the cryogenic DIR concept and outline the design and operation of the snail pump, along with results from preliminary testing. Tests to assess pumping and separation efficiency found that at D2 flows below 50.7 Pa ⋅ m3/s with 1% helium, the pump is capable of pumping and separating the gas with a resulting DIR fraction of >99%, with no helium entrained in the primary fuel exhaust stream. The main limitation is due to the thermal performance of the cryogenic circuits of the pump, which will be addressed in future testing.

Gebhart III, Trey E. [Oak Ridge National Laborator↗

Benchmark of the Fe xvv 𝓡 ratio in photoionized plasma during eclipse of Centaurus X-3 with XRISM/Resolve

The $\mathcal {R}$ ratio is a useful diagnostic of the X-ray emitting astrophysical plasmas and is defined as the intensity ratio of the forbidden over the inter-combination lines in the K$\alpha$ line complex of He-like ions. The value is altered by excitation processes (electron impact or UV photoexcitation) from the metastable upper level of the forbidden line, thereby constraining the electron density or UV field intensity. The diagnostic has been applied mostly in electron density constraints in collisionally ionized plasmas using low-Z elements, as was originally proposed for the Sun (Gabriel & Jordan, 1969a, MNRAS, 145, 241), but it can also be used in photoionized plasmas. To make use of this diagnostic, we need to know its value in the limit of no excitation of metastables ($\mathcal {R}_{0}$), which depends on the element, how the plasmas are formed, how the lines are propagated, and the spectral resolution affecting line blending principally with satellite lines from Li-like ions. We benchmark $\mathcal {R}_0$ for photoionized plasmas by comparing calculations using radiative transfer codes and observation data taken with the Resolve X-ray microcalorimeter onboard XRISM. We use the Fe xxv He$\alpha$ line complex of the photo-ionized plasma in Centaurus X-3 observed during eclipse, in which the plasma is expected to be in the limit of no metastable excitation. The measured $\mathcal {R} = 0.65 \pm 0.08$ is consistent with the value calculated using xstar for the plasma parameters derived from other line ratios of the spectrum. We conclude that the $\mathcal {R}$ ratio diagnostic can be used for high-Z elements such as Fe in photoionized plasmas, which has wide applications in plasmas around compact objects at various scales.

X-rays: binaries↗

Generation of strong fields with subcritical density plasmas to study the phase transitions of magnetized warm dense matter

Warm dense matter (WDM) is a regime where Fermi degenerate electrons play an important role in the macroscopic properties of a material. Recent experiments have brought us closer to understanding unmagnetized processes in WDM, but magnetized WDM remains unexplored because kilotesla magnetic fields are required. Although there are examples of field compression generating such fields by imploding pre-magnetized targets, these existing methods give no independent control over the parameters of the magnetized plasma and result in limited laser access for sample creation and diagnosis. In this paper, numerical simulations show that kilotesla magnetic fields can be obtained by shining laser beams onto the inner surface of a cylindrical target, rather than on the outer surface. This approach relies on field compression by a low-density, high-temperature plasma, rather than a high-density, low-temperature plasma, used in the more conventional approach. With this novel configuration, the region of peak magnetic field is mostly free of plasma, hence, other beams can reach a sample placed in the region of the peak field to form WDM and diagnose it.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Effects of non-equilibrium ionization and excitation on radiation absorption in plasma plumes induced by ablation of metal targets with nanosecond laser pulses

Ionization and radiation absorption in nanosecond laser-induced plasma plumes are routinely modeled using the Saha–Boltzmann equilibrium ionization model (EQM). However, the equilibrium assumption can be inaccurate during the laser pulse when non-equilibrium effects significantly impact radiation absorption. In the present work, the EQM and non-equilibrium collisional-radiative model (CRM) are compared to reveal the effect of plasma non-equilibrium on radiation absorption in non-homogeneous plumes and degree of plasma shielding. Simulations of plume expansion induced by irradiation of a copper target in 1 atm argon background gas with a 10 ns Gaussian pulse at a fluence from 8 Jcm −2 to 14 Jcm −2 are performed with a hybrid computational model that couples a lumped particle direct simulation Monte Carlo method with either CRM or EQM. The simulations show that the EQM strongly underestimates the effects of ionization and radiation absorption compared to CRM and, contrary to the CRM, predict strong ionization of the background gas. The differences between the models are explained by the qualitatively different coupling between plume expansion and dynamics of ionization and exitation processes in the CRM and EQM under conditions when the characteristic times for most radiation- and electron-induced processes are longer than the pulse duration. The CRM-based predictions are also found to agree much better with available experimental data. In conclusion, these results indicate that the model of Saha–Boltzmann equilibrium cannot be used for reliable prediction of the degree of plasma shielding in plumes induced by nanosecond laser pulses or for processing results of spectroscopic measurements at early stages of expansion of such plumes.

Physics - Plasma physics↗

Exploring inflammation‐related protein expression and its relationship with TSPO PET in Alzheimer's disease

Abstract INTRODUCTION To understand the role of neuroinflammation in Alzheimer's disease (AD), we characterized immune‐related proteins in central and peripheral biofluids. METHODS Selection of participants from the Translational Biomarker of Aging and Dementia (TRIAD) cohort with available translocator protein (TSPO) positron emission tomography (PET), cerebrospinal fluid (CSF) (n = 97), and plasma (n = 165). Biofluid samples analyzed with Olink technology (368 inflammation proteins). RESULTS Elevated proteins levels in CSF of TSPO‐positive individuals were identified. Functional enrichment analysis of CSF proteins revealed processes implicated in AD (MAPK, ERK cascades, cytokine, and leukocyte signaling). Selected candidates (CXCL1 and TNFRSF11B) showed high correlation with each other in CSF and with TSPO PET signal, but weaker associations with amyloid and tau PET. No significantly changed proteins in plasma between TSPO groups were found. DISCUSSION This explorative study identified two potential targets in CSF showing correlations with TSPO, amyloid and tau PET, suggesting a direct link between neuroinflammation, expression of these proteins and their potential implication in AD. Highlights Several proteins are elevated in CSF of TSPO PET‐positive individuals, linking them to neuroinflammation. Elevated CSF proteins were enriched in pathways such as MAPK, ERK, and cytokine signaling, linking them to the AD pathophysiology. Candidate proteins (CXCL1 and TNFRSF11B) correlated strongly with TSPO PET, particularly in brain regions known to be affected in AD. Although none of the plasma proteins remained significant after multiple comparisons correction when comparing their expression between TSPO groups, as done for CSF, candidate CSF proteins were found to correlate with plasmatic proteins, highlighting the complexity of the immune system.

Neurosciences & Neurology↗

Reconstruction of beam parameters and betatron radiation spectra measured with a Compton spectrometer

The photon flux resulting from high-energy electron beam interactions with high-field systems, such as those found in the upcoming FACET-II experiments at the SLAC National Accelerator Laboratory, yields deep insight into the electron beam’s underlying dynamics during the interaction. However, extracting this information is an intricate process. To demonstrate how to approach this challenge using modern methods, this paper utilizes simulated data that models plasma wakefield acceleration-derived betatron radiation in experiments to determine reliable methods of reconstructing key beam and beam-plasma interaction properties. For betatron radiation measurements, translating the observed 200⁢ keV to 30⁢ MeV photon double-differential energy-angle spectra obtained from an advanced Compton spectrometer requires testing multiple methods to optimize the pipeline from its response to incident electron beam information. The paper compares maximum likelihood estimation and machine learning to refine the translation of photon spectra into precise electron beam metrics, such as spot size, energy, and emittance, enhancing the understanding of beam behavior within these dense, high-field environments. We also introduce machine learning and the expected maximization algorithm to reconstruct the primary photon spectrum, employing a multilayer neural network for regression analysis of the energy and angle spectra. With appropriate modifications, the advanced methods reproduce relevant incident beam parameters with high accuracy, even for beam sizes in the <10 μ⁢m range. This capacity is critical to understanding intense beam propagation and its optimization in plasma.

Beam code development & simulation techniques↗

Intense cavitation-assisted electric discharge as a promising tool for water treatment

This study investigates interrelations between one-electrode Cavitation-Assisted Electric Discharge (CAED), two-electrode CAED, and recently discovered Intense CAED (I-CAED). The one-electrode CAED is a self-triggered nanosecond discharge with pulse energy in the micro-Joule range, which can be generated even by a DC voltage. I-CAED consists of a non-equilibrium part within a low-pressure cavitating region and a micro-spark traversing a liquid film. We hypothesize that CAED propagates from the high-voltage electrode as an ionization wave through bubbles of saturated vapor. Subsequently, the streamer-like discharges in the bubbles may form a continuous plasma channel. Inside the cavitating region, the plasma is strongly non-equilibrium, providing an ideal environment for generating chemically unstable species such as hydrogen peroxide (H 2 O 2 ). Plasma of I-CAED spark is characterized by high electron density and near-thermal equilibrium, emitting a continuous ultraviolet spectrum. The combination of these different discharge parts makes I-CAED in water a highly effective tool for the Advanced Oxidation Process, particularly in water disinfection. Experimentally demonstrated Electric Energy per Order value for disinfection of E. coli-contaminated water is as low as 0.135 ± 0.035 kWh/m 3 /order. Estimates show that the implementation of “dry electrodes” configuration reduces the erosion rate of the electrode material by at least one order of magnitude. Spectral analysis reveals that the continuum emission generated by I-CAED in proximity to metal electrodes deviates from the spectra of discharges spatially decoupled from the electrodes. We assume that this spectral divergence is attributable to blackbody-like emission originating from metallic nanoparticles form during the electrode's erosion process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗