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At least 361 records · Page 20

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The objective of this research is to fully investigate the Ribbon-To-Ribbon (R-T-R) approach to silicon ribbon growth. Initial work has concentrated on modification and characterization of an existing R-T-R apparatus. In addition, equipment for auxiliary heating of the melt is being evaluated and acquired. Modification of the remote viewing system and mechanical staging are nearly complete. Characterization of the laser and other components is in progress and several auxiliary heating techniques are being investigated.

Gurtler, R. W.↗

LSSA (Low-cost Silicon Solar Array) project

The Photovoltaic Conversion Program was established to find methods of economically generating enough electrical power to meet future requirements. Activities and progress in the following areas are discussed: silicon-refinement processes; silicon-sheet-growth techniques; encapsulants; manufacturing of off-the-shelf solar arrays; and procurement of semistandardized solar arrays.

Source record↗

Slicing of silicon into sheet material: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Multiblade slurry sawing is used to slice 10 cm diameter silicon ingots into wafers 0.024 cm thick using 0.050 cm of silicon per slice (0.026 cm kerf loss). Total slicing time is less than twenty hours, and 143 slices are produced simultaneously. Productivity (slice area per hour per blade) is shown as a function or blade load and thickness, and abrasive size. Finer abrasive slurries cause a reduction in slice productivity, and thin blades cause a reduction of wafer accuracy. Sawing induced surface damage is found to extend 18 microns into the wafer.

Holden, S. C.↗

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth was investigated. An existing RTR apparatus, RTR#1, was upgraded to allow for 5 cm wide ribbon growth with a finite stroke length of at least 15 cm. A second RTR apparatus, RTR#2, was designed, built, and operated which utilizes continuous feed mechanisms and allows continuous growth of 7.5 cm wide ribbons. RTR#2 includes development and utilization of advanced beam scanning (or shaping), high power lasers, and thermal profile modification elements to attain maximum growth velocities (with a design goal of 18 cm/min). Materials studies, process development, and thermal analyses are also described. Residual stresses and dislocation densities were minimized through theoretical and experimental efforts towards optimization of thermal profiles. Growth runs were performed on RTR#2 and solar cells were fabricated which demonstrated efficiencies greater than 10%.

Gurtler, R. W.↗

Accelerated/abbreviated test methods of the low-cost silicon solar array project. Study 4, task 3: Encapsulation

Methods of accelerated and abbreviated testing were developed and applied to solar cell encapsulants. These encapsulants must provide protection for as long as 20 years outdoors at different locations within the United States. Consequently, encapsulants were exposed for increasing periods of time to the inherent climatic variables of temperature, humidity, and solar flux. Property changes in the encapsulants were observed. The goal was to predict long term behavior of encapsulants based upon experimental data obtained over relatively short test periods.

Kolyer, J. M.↗

Phase 1 of the automated array assembly task of the low cost silicon solar array project

The state of technology readiness for the automated production of solar cells and modules is reviewed. Individual process steps and process sequences for making solar cells and modules were evaluated both technically and economically. High efficiency with a suggested cell goal of 15% was stressed. It is concluded that the technology exists to manufacture solar cells which will meet program goals.

Coleman, M. G.↗

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Duncan, C. S.↗

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Fabrication of a prototype large capacity multiple blade slurry saw is considered. Design of the bladehead which will tension up to 1000 blades, and cut a 45 cm long silicon ingot as large as 12 cm in diameter is given. The large blade tensioning force of 270,000 kg is applied through two bolts acting on a pair of scissor toggles, significantly reducing operator set-up time. Tests with an upside-down cutting technique resulted in 100% wafering yields and the highest wafer accuracy yet experienced with MS slicing. Variations in oil and abrasives resulted only in degraded slicing results. A technique of continuous abrasive slurry separation to remove silicon debris is described.

Holden, S. C.↗

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth is investigated. An existing RTR apparatus is to be upgraded to its full capabilities and operated routinely to investigate and optimize the effects of various growth parameters on growth results. A new RTR apparatus was constructed to incorporate increased capabilities and improvements over the first apparatus and to be capable of continuous growth. New high power lasers were implemented and this led to major improvements in growth velocity -- 4 inch/min. growth has been demonstrated. A major step in demonstration of the full feasibility of the RTR process is reported in the demonstration of RTR growth from CVD polyribbon rather than sliced polyribbon ingots. Average solar cell efficiencies of greater than 9% and a best cell efficiency of 11.7% are reported. Processing was shown to provide a substantial improvement in material minority carrier diffusion length. An economic analysis is reported which treats both the polyribbon fabrication and RTR processes.

Gurtler, R. W.↗

Accelerated/abbreviated test methods, study 4 of task 3 (encapsulation) of the low-cost silicon solar array project

Inherent weatherability is controlled by the three weather factors common to all exposure sites: insolation, temperature, and humidity. Emphasis was focused on the transparent encapsulant portion of miniature solar cell arrays by eliminating weathering effects on the substrate and circuitry (which are also parts of the encapsulant system). The most extensive data were for yellowing, which were measured conveniently and precisely. Considerable data also were obtained on tensile strength. Changes in these two properties after outdoor exposure were predicted very well from accelerated exposure data.

Kolyer, J. M.↗

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Wolfson, R. G.↗

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗

Hot forming of silicon sheet, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.

Graham, C. D., Jr.↗

Delayed fracture of silicon: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Bar specimens were cut from ingots of single crystal silicon, and acid etched prior to testing. Artificial surface flaws were introduced in specimens by indentation with a Knoop hardness tester. The specimens were loaded in four-point bending to 95 percent of the nominal fracture stress, while keeping the surface area, containing the flaw, wet with test liquids. No evidence of delayed fracture, and, therefore stress corrosion, of single crystal silicon was observed for liquid environments including water, acetone, and aqueous solutions of NaCl, NH4OH, and HNO3, when tested with a flaw parallel to a (110) surface. The fracture toughness was calculated.

Chen, T. J.↗