Search NASA⌕ Search

SEARCH · Search NASA

Results for “Quantum structures”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Photodiode-Coupled Light Modulator

Absorption of one light beam controls transmission of another. High-performance monolithic light modulator comprised of p-doped/intrinsic/n-doped (PIN) GaAs photodiode grown directly over InAs/GaAs PIN multiple-quantum-well (MQW) diode. Photodiode-coupled multiple-quantum-well modulator includes advanced semi-conductor microstructures enhancing electro-optical properties. Using standard lithographic and etching techniques for defining picture elements, structures fabricated into two-dimensional arrays for use as spatial light modulators.

Maserjian, Joseph↗
NASA NTRS1990

Superlattice Long-Wavelength Infrared Sensors

Superlattice of LaN and Si detects at wavelengths up to 12 micrometers. If LaN grown epitaxially on silicon, sensitivity of silicon-based photodetectors extended farther into infrared wavelength region with high quantum detection efficiency by use of LaN/Si superlattices. In principle, by appropriate choice of thicknesses of layers, effective band-gap energy of superlattice structure set to any desired value between band gaps of two materials.

Fathauer, Robert W.↗
NASA NTRS1989

Computational solution of chemistry problems

AB initio quantum chemical techniques have been used to investigate weakly bound complexes of H2O and SO2. An energy gradient program was used to locate stable structures for the H2O, SO2 complexes, and SCF calculations were carried out to determine the binding energies of complexes with multiple water molecules. A 4-31G basis set was used for most potential energy searches. More accurate basis sets including a generally contracted basis set with d orbitals on the sulfur were used for geometry and binding energy verification. For single water complexes, five different stable geometries were located with binding energies between 4 and 11 Kcal mol(-1), suggesting a binding shell for H2O around SO2 and a mechanism for the formation of an SO2-containing water droplet. Calculations on one of the complexes utilizing a larger double zeta basis and d functions on the sulfur atom lead to adjusted binding energies in the range 3 to 8 Kcal mol(-1). Very little charge transfer between SO2 and H2O was present. Addition of more than one H2O was found to be energetically favorable although the addition of the fourth water in certain geometries did not increase the stability of the complex. An alternative mechanism for the tropospheric gas phase production of acid rain is suggested.

Ake, Robert L.↗
NASA NTRS1990

Interfacial wave theory of dendrite growth - Global mode solution and quantum condition

The signal feedback process at the edge of the dendrite tip is investigated, and the global instability mechanism of the system is derived. A mechanism is developed to describe a discrete set of unstable global modes for the system. Called WEASR, the method considers the wave emission at the turning point and signal reflections between the turning point and the front edge of the tip. It is shown that the method can obtain the asymptotic solutions for the unstable global modes and the quantum condition for the corresponding eigenvalues. A turning point called the pattern formation condition is shown to be crucial in the formation of dendritic structure and the choice of the final tip velocity. The wave emission process is outlined, and the importance of a signal feedback process at the edge of the dendrite tip is demonstrated. Parameters such as stability and surface tension can be analyzed in terms of their effects on WEASR modes.

Xu, Jian-Jun↗
NASA NTRS2004

Open-Source Software for Modeling of Nanoelectronic Devices

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Oyafuso, Fabiano↗
NASA NTRS1976

Test results on intensified charge coupled devices

CCD imaging arrays were evaluated for a photon counting astronomical sensor. Results show noise corresponding to less than 100 rms electrons and gains of approximately 1000 at 10kV accelerating voltage (greater than 5000 at 25kV). Measured charge transfer efficiencies are in excess of 0.9999, signal saturation levels are as high as 990000 electrons per pixel and peak quantum efficiencies are greater than 75%. Successful proximity focussed intensified charge coupled devices (ICCD) have been fabricated, although problems still exist with contamination and possible structural failures in the CCD's during tube manufacture.

Williams, J. T.↗
NASA NTRS2015

Effects of Atomic-Scale Structure on the Fracture Properties of Amorphous Carbon - Carbon Nanotube Composites

The fracture of carbon materials is a complex process, the understanding of which is critical to the development of next generation high performance materials. While quantum mechanical (QM) calculations are the most accurate way to model fracture, the fracture behavior of many carbon-based composite engineering materials, such as carbon nanotube (CNT) composites, is a multi-scale process that occurs on time and length scales beyond the practical limitations of QM methods. The Reax Force Field (ReaxFF) is capable of predicting mechanical properties involving strong deformation, bond breaking and bond formation in the classical molecular dynamics framework. This has been achieved by adding to the potential energy function a bond-order term that varies continuously with distance. The use of an empirical bond order potential, such as ReaxFF, enables the simulation of failure in molecular systems that are several orders of magnitude larger than would be possible in QM techniques. In this work, the fracture behavior of an amorphous carbon (AC) matrix reinforced with CNTs was modeled using molecular dynamics with the ReaxFF reactive forcefield. Care was taken to select the appropriate simulation parameters, which can be different from those required when using traditional fixed-bond force fields. The effect of CNT arrangement was investigated with three systems: a single-wall nanotube (SWNT) array, a multi-wall nanotube (MWNT) array, and a SWNT bundle system. For each arrangement, covalent bonds are added between the CNTs and AC, with crosslink fractions ranging from 0-25% of the interfacial CNT atoms. The SWNT and MWNT array systems represent ideal cases with evenly spaced CNTs; the SWNT bundle system represents a more realistic case because, in practice, van der Waals interactions lead to the agglomeration of CNTs into bundles. The simulation results will serve as guidance in setting experimental processing conditions to optimize the mechanical properties of CNT composites.

Jensen, Benjamin D.↗
NASA NTRS1986

Exciton effects in the index of refraction of multiple quantum wells and superlattices

Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

Kahen, K. B.↗
NASA NTRS1990

Resonant tunneling IR detectors

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.

Woodall, Jerry M.↗
NASA NTRS2013

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

doped silicon surfaces↗
NASA NTRS2010

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Welser, Roger E.↗
NASA NTRS1989

Temperature dependence of penetration depth in thin film niobium

A novel technique is presented which should allow precise determination of the temperature dependence of the inductance, and hence of the penetration depth, of superconducting niobium thin-film structures. Four niobium thin-film stripline inductors are arranged in a bridge configuration, and inductance differences are measured using a potentiometric technique with a SQUID (superconducting quantum interference device) as the null detector. Numerical simulations of the stripline inductances are presented which allow the performance of the measurement technique to be evaluated. The prediction of the two-fluid model for the penetration-depth temperature dependence is given for reduced temperatures of 0.3 to 0.9. The experimental apparatus and its resolution and accuracy are discussed.

More, N.↗
NASA NTRS2003

InGaAsSb Detectors' Characterization for 2-Micron CO2 Lidar/DIAL Applications

Recent interest in monitoring atmospheric CO2 focuses attention on infrared remote sensing using the 2-micron lidar/differential absorption lidar (DIAL) technique. Quantum detectors are critical components in this technique, and many research efforts concentrate on developing such devices for the 2-micron wavelength. Characterization results of InGaAsSb quantum detectors for the 2-micron wavelength range are presented, including experimental setup and procedure. Detectors are prototype devices manufactured by using separate absorption and multiplication (SAM) structures. Characterization experiments include V-I measurements, spectral response and its variation with bias voltage and temperature, noise measurements, noise-equivalent-power (NEP) and detectivity calculations, and signal-to-noise ratio (SNR) estimation. A slight increase in the output signal occurred with increased bias voltage and was associated with a noise level increase. Cooling down the detectors reduces noise and shifts the cutoff wavelength to shorter values. Further improvement in the design and manufacturing process, by increasing the device gain and lowering its noise level, is necessary to meet the required CO2 lidar/DIAL specifications.

Refaat, Tamer F.↗
NASA NTRS2003

Intersubband Transitions in InAs/AlSb Quantum Wells

We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Li, J.↗