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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Location of the emitting regions in the mode-switching radio pulsar PSR 1926 + 18

We present an analysis of average single-frequency profiles of the radio pulsar PSR 1926 + 18 in two different modes. Assuming a purely dipolar field and taking into account retardation, aberration, magnetic line curvature, and ignoring the magnetic field line sweepback, we come to the following conclusions: (1) mode switching in PSR 1926 + 18 at 430 MHz may be understood in terms of different emission heights of the two modes; (2) the weaker mode appears when regions emitting the first two components move away from the star by an additional distance of not more than several kilometers from their original locations; (3) the trailing conal component is emitted essentially from the same layer of the magnetosphere in both modes, in contrast to the first conal component, which appears to change its location in the magnetosphere; (4) core and conal components are emitted from distinctly different emission heights: core components not more than 75 km, and conal components not less than 215 km from the surface of the star. Our model infers three-dimensional information about the emitting region from single-frequency observations. It has been tested previously with a mode switching pulsar that had one component in the average profile in two modes. This paper shows that the same model can explain positions and widths of the components in a more complex profile during mode switching, provided that the components can be traced from one mode to another.

Nowakowski, L. A.↗
NASA NTRS1995

Switch Box For Controlling Flows Of Four Gases

Switch box designed for use in simultaneously controlling flows of as many as four out of total of six available gases into semiconductor-processing chamber. Contains switches, relays, logic circuitry, display devices, and other circuitry for connecting each of as many as four gas controllers to any one of as many as six available mass-flow controllers. Front panel of switch box apprises technician of statuses of flows of various gases.

Wishard, James R.↗
NASA NTRS1995

Asymmetric Switching For A PWM H-Bridge Power Circuit

Only two of four switches interrupt substantial current. An asymmetric timing scheme improves design and operation of pulse-width-modulation (PWM) H-bridge switch-and-transformer circuit. Circuit part of dc-to-dc converter or dc-to-ac inverter; in either case, output current or voltage regulated by adjusting times of opening and closing of semiconductor switches 1 through 4 to adjust durations of current pulses in primary winding of transformer.

Wong, See-Pok↗
NASA NTRS1995

MMPP Traffic Generator for the Testing of the SCAR 2 Fast Packet Switch

A prototype MWP Traffic Generator (TG) has been designed for testing of the COMSAT-supplied SCAR II Fast Packet Switch. By generating packets distributed according to a Markov-Modulated Poisson Process (MMPP) model. it allows the assessment of the switch performance under traffic conditions that are more realistic than could be generated using the COMSAT-supplied Traffic Generator Module. The MMPP model is widely believed to model accurately real-world superimposed voice and data communications traffic. The TG was designed to be as much as possible of a "drop-in" replacement for the COMSAT Traffic Generator Module. The latter fit on two Altera EPM7256EGC 192-pin CPLDs and produced traffic for one switch input port. No board changes are necessary because it has been partitioned to use the existing board traces. The TG, consisting of parts "TGDATPROC" and "TGRAMCTL" must merely be reprogrammed into the Altera devices of the same name. However, the 040 controller software must be modified to provide TG initialization data. This data will be given in Section II.

Chren, William A., Jr.↗
NASA NTRS1987

Context Switching with Multiple Register Windows: A RISC Performance Study

Although previous studies have shown that a large file of overlapping register windows can greatly reduce procedure call/return overhead, the effects of register windows in a multiprogramming environment are poorly understood. This paper investigates the performance of multiprogrammed, reduced instruction set computers (RISCs) as a function of window management strategy. Using an analytic model that reflects context switch and procedure call overheads, we analyze the performance of simple, linearly self-recursive programs. For more complex programs, we present the results of a simulation study. These studies show that a simple strategy that saves all windows prior to a context switch, but restores only a single window following a context switch, performs near optimally.

Konsek, Marion B.↗
NASA NTRS1998

FPGA Based Reconfigurable ATM Switch Test Bed

Various issues associated with "FPGA Based Reconfigurable ATM Switch Test Bed" are presented in viewgraph form. Specific topics include: 1) Network performance evaluation; 2) traditional approaches; 3) software simulation; 4) hardware emulation; 5) test bed highlights; 6) design environment; 7) test bed architecture; 8) abstract sheared-memory switch; 9) detailed switch diagram; 10) traffic generator; 11) data collection circuit and user interface; 12) initial results; and 13) the following conclusions: Advances in FPGA make hardware emulation feasible for performance evaluation, hardware emulation can provide several orders of magnitude speed-up over software simulation; due to the complexity of hardware synthesis process, development in emulation is much more difficult than simulation and requires knowledge in both networks and digital design.

Chu, Pong P.↗
NASA NTRS1997

Multi-Billion Shot, High-Fluence Exposure of Cr(4+): YAG Passive Q-Switch

NASA's Goddard Space Flight Center is developing the Geoscience Laser Altimeter System (GLAS) employing a diode pumped, Q-Switched, ND:YAG laser operating at 40 Hz repetition rate. To meet the five-year mission lifetime goal, a single transmitter would accumulate over 6.3 billion shots. Cr(4+):YAG is a promising candidate material for passively Q-switching the laser. Historically, the performance of saturable absorbers has degraded over long-duration usage. To measure the multi-billion shot performance of Cr(4+):YAG, a passively Q-switched GLAS-like oscillator was tested at an accelerated repetition rate of 500 Hz. The intracavity fluence was calculated to be approximately 2.5 J/cm(exp 2). The laser was monitored autonomously for 165 days. There was no evidence of change in the material optical properties during the 7.2 billion shot test.. All observed changes in laser operation could be attributed to pump laser diode aging. This is the first demonstration of multi-billion shot exposure testing of Cr(4+):YAG in this pulse energy regime

Stephen, Mark A.↗
NASA NTRS2001

A Magnetoresistive Heat Switch for the Continuous ADR

In compensated elemental metals at low temperature, a several Tesla field can suppress electronic heat conduction so thoroughly that heat is effectively carried by phonons alone. In approximately one mm diameter single crystal samples with impurity concentrations low enough that electron conduction is limited by surface scattering, the ratio of zerofield to high-field thermal conductivity can exceed ten thousand. We have used this phenomenon to build a compact, solid-state heat switch with no moving parts and no enclosed fluids. The time scale for switching states is limited by time scale for charging the magnet that supplies the controlling field. Our design and fabrication techniques overcome the difficulties associated with manufacturing and assembling parts from single crystal tungsten. A clear disadvantage of the magnetoresistive switch is the mass and complexity of the magnet system for the controlling field. We have discovered a technique of minimizing this mass and complexity, applicable to the continuous adiabatic demagnetization refrigerator.

Canavan, E. R.↗
NASA NTRS2001

Polydiacetylene as an all-optical picosecond Switch

Polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) shows a picosecond switching property, which illustrated a partial all-optical picosecond NAND logic gate. The switching phenomenon was demonstrated by waveguiding two collinear beams at 633 nm and 532 nm through a hollow fiber of 50 micrometers diameter, coated from inside with a thin film of PDAMNA. A Z-scan investigations of a PDAMNA thin film on quartz substrate revealed that the switching effect was attributed to an excited state absorption in the systems. The studies also showed that the polymer suffers a photo-oxidation beyond an intensity level of 2.9 x 10(exp 6) w/square cm. The photo-oxidized film has different physical properties that are different from the original film before oxidation. The life time of both excited states before and after oxidation as well as their absorption coefficients were estimated by fitting a three level system model to the experimental results.

Abdeldayem, Hossin A.↗
NASA NTRS2002

AEA Cell-Bypass-Switch Activation: An Update

The objectives of this project included the following: (1) verify the performance of AEA cell bypass protection device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) assess the safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD; and (3) confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path (a homogeneous low melting point alloy). The nominal performance of AEA CBPD under flight operating conditions (vacuum except zero-G, and high impedance cell) has been demonstrated. There is no evidence of cell rupture or excessive heat production during or after CBPD switch activation under simulated high cell impedance (open-circuit cell failure mode). The formation of a continuous low impedance path (a homogeneous low melting point alloy) has been confirmed.

Keys, Denney↗
NASA NTRS1998

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗
NASA NTRS2003

Beam-Switch Transient Effects in the RF Path of the ICAPA Receive Phased Array Antenna

When the beam of a Phased Array Antenna (PAA) is switched from one pointing direction to another, transient effects in the RF path of the antenna are observed. Testing described in the report has revealed implementation-specific transient effects in the RF channel that are associated with digital clocking pulses that occur with transfer of data from the Beam Steering Controller (BSC) to the digital electronics of the PAA under test. The testing described here provides an initial assessment of the beam-switch phenomena by digitally acquiring time series of the RF communications channel, under CW excitation, during the period of time that the beam switch transient occurs. Effects are analyzed using time-frequency distributions and instantaneous frequency estimation techniques. The results of tests conducted with CW excitation supports further Bit-Error-Rate (BER) testing of the PAA communication channel.

Sands, O. Scott↗
NASA NTRS2003

A Compact, Soft-Switching DC-DC Converter for Electric Propulsion

A hybrid, soft-switching, DC-DC converter has been developed with superior soft switching characteristics, high efficiency, and low electro-magnetic interference. This hybrid topology is comprised of an uncontrolled bridge operating at full pulse-width, and a controlled section operating as a conventional phase modulated converter. The unique topology is able to maintain zero voltage switching down to no load operating conditions. A breadboard prototype was developed and tested to demonstrate the benefits of the topology. Improvements were then made to reduce the size of passive components and increase efficiency in preparation for packaging. A packaged prototype was then designed and built, and several innovative packaging techniques are presented. Performance test data is presented that reveals deficiencies in the design of the power transformer. A simple redesign of the transformer windings eliminated the deficiency. Future plans to improve the converter and packaging design are presented along with several conclusions.

Button, Robert↗
NASA NTRS2003

Characteristics of Single-Event Upsets in a Fabric Switch (ADS151)

Abstract-Two types of single event effects - bit errors and single event functional interrupts - were observed during heavy-ion testing of the AD8151 crosspoint switch. Bit errors occurred in bursts with the average number of bits in a burst being dependent on both the ion LET and on the data rate. A pulsed laser was used to identify the locations on the chip where the bit errors and single event functional interrupts occurred. Bit errors originated in the switches, drivers, and output buffers. Single event functional interrupts occurred when the laser was focused on the second rank latch containing the data specifying the state of each switch in the 33x17 matrix.

Buchner, Stephen↗
NASA NTRS2005

A Shape Memory Alloy Based Cryogenic Thermal Conduction Switch

Shape memory alloys (SMAs) can produce large strains when deformed (e.g., up to 8%). Heating results in a phase transformation and associated recovery of all the accumulated strain. This strain recovery can occur against large forces, resulting in their use as actuators. Thus an SMA element can integrate both sensory and actuation functions, by inherently sensing a change in temperature and actuating by undergoing a shape change as a result of a temperature-induced phase transformation. Two aspects of our work on cryogenic SMAs are addressed here. First - a shape memory alloy based cryogenic thermal conduction switch for operation between dewars of liquid methane and liquid oxygen in a common bulkhead arrangement is discussed. Such a switch integrates the sensor element and the actuator element and can be used to create a variable thermal sink to other cryogenic tanks for liquefaction, densification, and zero boil-off systems for advanced spaceport applications. Second - fabrication via arc-melting and subsequent materials testing of SMAs with cryogenic transformation temperatures for use in the aforementioned switch is discussed.

Notardonato, W. U.↗
NASA NTRS2004

Bearingless Switched-Reluctance Motor Improved

The Morrison rotor, named after its inventor, is a hybrid rotor for use in a switched reluctance electric motor. The motor is characterized as bearingless in the sense that it does not rely on conventional mechanical bearings: instead, it functions as both a magnetic bearing and a motor. Bearingless switched-reluctance motors are attractive for use in situations in which large variations in temperatures and/or other extreme conditions preclude the use of conventional electric motors and mechanical bearings. In the Morrison motor, as in prior bearingless switched-reluctance motors, a multipole rotor is simultaneously levitated and rotated. In the prior motors, simultaneous levitation and rotation are achieved by means of two kinds of stator windings: (1) main motor windings and (2) windings that exert levitating forces on a multipole rotor. The multipole geometry is suboptimum for levitation because it presents a discontinuous surface to the stator pole faces, thereby degrading the vibration suppression capability of the magnetic bearing. The Morrison rotor simplifies the stator design in that it contains only one type of winding. The rotor is a hybrid that includes both (1) a circular lamination stack for levitation and (2) a multipole lamination stack for rotation. Simultaneous levitation and rotation at 6000 rpm were achieved with a prototype that included six rotor poles and eight stator poles. During normal operation, two of the four pairs of opposing stator poles (each pair at right angles to the other pair) levitate the rotor. The remaining two pairs of stator poles exert torque on the six-pole rotor lamination stack to produce rotation. The relative length of the circular and multipole lamination stacks on the rotor can be chosen to tailor the performance of the motor for a specific application. For a given overall length, increasing the length of the multipole stack relative to the circular stack results in an increase in torque relative to the levitation load capacity and vice versa.

Morrison, Carlos R.↗
NASA NTRS2006

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Phillips, Thomas A.↗
NASA NTRS2006

Static and Switching Characteristics of a 4H-SiC Based BJT to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from 23 to 200 C. All testing was done in a pulse mode at low duty cycle (approx. 0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of either 7 or 0.6 V. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 OMEGA non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 81 to 97 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 30 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 61 to 77 ns with the 7 V sweep-out and 130 to 150 ns with the 0.6 V sweep-out. At a fixed temperature and I(sub C), the turn-off time decreased slightly with decreasing I(sub B), for I(sub B) sufficient to still provide full turn-on. The ratio of conduction to switching losses is estimated, based on the observed I(sub C) transition times and static curves. An estimate at 200 kHz and a 50 percent duty cycle shows that under practicable conditions the two losses can be comparable. Hence the evidence obtained does not support the occasionally voiced concern of necessarily unacceptably high conduction losses in SiC-based BJTs.

Niedra, Janis M.↗