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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Perovskite on Silicon Tandem Solar Cells

Since installing solar panels costs more than the panels themselves, it is critically important to improve the efficiency of the panels so that fewer panels need to be installed. More than 90% of all panels being manufactured are made with silicon solar cells. The most promising approach to reach 27% is to upgrade the panels by adding a second set of cells with a larger band gap that can harvest the higher energy photons in the visible spectrum and generate a higher voltage than silicon is capable of generating. Perovskite semiconductors are very promising for low-cost tandems because they have high band gaps, can be rapidly printed from solutions and have been used to make 25% efficient cells by themselves. If we show that it is possible to make stable tandems with 30% efficiency using materials that could be deposited at low cost and that the energy yield will not be compromised, then private companies would be able to raise the capital needed to manufacture this technology. The main metrics for this project are the power conversion efficiency of a lab-scale perovskite/silicon tandem and the ability to maintain a high power conversion efficiency in perovskite solar cells after accelerated operational stability testing under maximum power point at elevated temperature and 1 sun illumination. In short, this project demonstrates improvements to the perovskite absorber layer, contacts for the perovskite solar cell, and transparent oxide layers for window electrodes to achieve tandem efficiencies of 25% after one year and 27% after two years. By the end of the project, we identify strategies to further improve light management in the tandem devices and outline a pathway to reach 30%.In parallel, stability testing is conducted to evaluate said absorber and contact layers in the perovskite top cell, demonstrating 1000 hours of operation with less than 10% degradation at 1 sun. Our work on this project has made a leading impact on the development of perovskite/silicon tandems. The triple halide perovskite that we developed using iodide, bromide, and chloride and published in Science in March 2020 has received significant interest from other experts in the field at conferences. We took a silicon bottom cell with 21% efficiency, a technology that is responsible for a $30 billion market, and improved it by 30% relative. In addition, we have demonstrated impressive stability of our perovskite semitransparent top cells used in the tandems, showing for the first time packaged devices that pass a variety of IEC stability tests including damp heat, temperature cycling, and UV exposure tests.

14 SOLAR ENERGY↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring important upgrades to the Compact Muon Solenoid (CMS) to handle an increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.] (ORCID:0009000151↗
DOE OSTI2021

Luminescent and Magnetic Tb-MOF Flakes Deposited on Silicon

The synthesis of a terbium-based 2D metal–organic framework (MOF), of formula [Tb(MeCOO)(PhCOO) 2 ] (1), a crystalline material formed by neutral nanosheets held together by Van der Waals interactions, is presented. The material can be easily exfoliated by sonication and deposited onto different substrates. Uniform distributions of Tb-2D MOF flakes onto silicon were obtained by spin-coating. We report the luminescent and magnetic properties of the deposited flakes compared with those of the bulk. Complex 1 is luminescent in the visible and has a sizeable quantum yield of QY = 61% upon excitation at 280 nm. Photoluminescence measurements performed using a micro-Raman set up allowed us to characterize the luminescent spectra of individual flakes on silicon. Magnetization measurements of flakes-on-silicon with the applied magnetic field in-plane and out-of-plane display anisotropy. Ac susceptibility measurements show that 1 in bulk exhibits field-induced slow relaxation of the magnetization through two relaxation paths and the slowest one, with a relaxation time of τ lf ≈ 0.5 s, is assigned to a direct process mechanism. The reported exfoliation of lanthanide 2D-MOFs onto substrates is an attractive approach for the development of multifunctional materials and devices for different applications.

2D MOFs↗
DOE OSTI2021

Multichannel Fiber-Optic Silicon Fabry–Pérot Interferometric Bolometer System for Plasma Radiation Measurements

A single-channel fiber-optic bolometer system based on a high-finesse silicon Fabry–Pérot interferometer (FPI) was previously reported, intended to measure plasma radiation from the magnetically confined fusion chamber. Recently, we developed a multichannel fiber-optic bolometer system with five bolometers multiplexed using a coarse wavelength division multiplexer (CWDM) and interrogated with a white-light system involving a superluminescent light-emission diode source and a high-speed spectrometer. One of the bolometers was used as the reference bolometer to compensate for the ambient temperature variations, and the other four bolometers were used for radiation measurement. The bolometers have a simple structure with a silicon pillar at the end of the single-mode fiber and a gold disk on the other side of the silicon pillar. They are also easy to fabricate without stringent requirements on the optical alignment. Analysis of the system optimization was performed to improve the noise performance and to mitigate the vibration effect that may present in the practical application. The system had a significantly enhanced measurement range compared to the previous high-finesse FPI bolometer system for measuring radiation. Test results performed in air using a 405 nm laser as the radiation source showed that the temperature resolution and the noise-equivalent power density of the sensing bolometers connected to each channel of the CWDM were, respectively, ~0.4 mK and ~0.1 W/m2, with a time constant of ~220 ms, which is comparable to the previous more complicated fiber-optic bolometer systems based on high-finesse FPIs that were interrogated using wavelength-scanning lasers.

Uddin, Nezam↗
DOE OSTI2025

ATOMIC AND MICROSTRUCTURAL ORIGINS OF STORED ENERGY RELEASE IN NEUTRON-IRRADIATED SILICON CARBIDE

Here, we employ a combination of advanced synchrotron-based scattering characterization techniques to understand and unravel the atomic origins of the colossal stored energy release in neutron irradiated silicon carbide. The quantification of the neutron irradiation-induced defects, and their impact on the structureproperty relationship is important for the design and safe operation of advanced fission and fusion reactors. Our experimental results show that the atomic structure in the as irradiated samples is significantly perturbed due to a large fraction of vacancy and interstitial type defects that lead to complex microstructures and additional components in the x-ray diffraction and pair distribution function results. We directly correlate the stored energy release to the recovery of the sub-lattices, with pair distribution function analysis highlighting that the carbon interstitial and vacancy-type defects contribute to stored energy more than those of silicon. We find these results to be striking and believe our discoveries to be timely and noteworthy given the technological importance of silicon carbide to the nuclear fission and fusion communities.

Sprouster, D.J.↗
DOE OSTI2021

Facile clay exfoliation using polymer silicone surfactants

The present invention is directed to processes for preparing a silicone surfactant intercalated clay and a polymer-clay nanocomposite. The processes use silicone surfactants having a molecular weight in the range of 10,000 to 100,000 Dalton to achieve fully exfoliating clay structures. Using these macromolecular silicone surfactants, along with the engineered control of the processing pH and drying stress conditions, this invention provides simple and low-cost methods of making a fully-exfoliated polymer-clay nanocomposite.

Yang, Arthur Jin-Ming↗
DOE OSTI2021

Methods for depositing III-V compositions on silicon

The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.

Warren, Emily Lowell↗
DOE OSTI2021

Electrolyte compositions for stabilizing silicon electrodes in lithium batteries

A lithium-ion electrochemical cell comprises a first electrode, a second electrode comprising elemental silicon, a microporous separator membrane between the first and second electrodes, and an electrolyte in contact with the electrodes and the membrane. The electrolyte comprises a lithium salt at a concentration in the range of about 0.1 M to about 5 M, and an additional metal salt at a concentration in the range of about 0.001 to about 5 M dissolved in an organic solvent. The additional metal salt comprises a metal cation that can form a lithium-silicon-metal Zintl phase; and the first electrode comprises metallic lithium or a cathode active material capable of donating and accepting lithium ions to and from the second electrode during electrochemical cycling. Electrolytes for use with silicon-containing electrodes also are described.

Vaughey, John T.↗
DOE OSTI2024

Lithium ion cells with high performance electrolyte and silicon oxide active materials achieving very long cycle life performance

Improved negative electrodes can comprise a silicon based active material blended with graphite to provide more stable cycling at high energy densities. In some embodiments, the negative electrodes comprise a blend of polyimide binder mixed with a more elastic polymer binder with a nanoscale carbon conductive additive. Electrolytes have been formulated that provide for extended cycling of cells incorporating a mixture of a silicon-oxide based active material with graphite active material in negative electrodes that can be matched with positive electrodes comprising nickel rich lithium nickel manganese cobalt oxides to cells with unprecedented cycling properties for large capacity cell based on a silicon negative electrode active material.

Dong, Yingnan↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring significant upgrades to the Compact Muon Solenoid (CMS) to handle the increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.; Fermilab] (ORCID:↗
DOE OSTI2019

CO{sub 2} laser-induced micro-plume treatment of silicon: technique and application

A method for treating the surface of crystalline silicon (α-Si) covered with a fused silica (SiO{sub 2}) plate by a laser-induced plume arising from the absorption of CO{sub 2} laser radiation in glass is presented. The mechanism of micro-plume formation and the effect of this micro-plume on α-Si sample are considered. The α-Si processing regimes were determined that relate the depth of the formed relief to the radiation power density, the temperature of the micro-plume formed during SiO{sub 2} irradiation was measured and reached 3000 K. The diffraction phase gratings were designed, manufactured on silicon, and tested, they successfully split 10.6 μm laser beam at 0 and ± 1 diffraction orders. The method belongs to the group of direct writing methods and is easily adapted to different types of diffraction elements on the surface of Si and other materials transparent to 10 μm irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗
DOE OSTI2021

Chemical Interplay of Silicon and Graphite in a Composite Electrode in SEI Formation

In this study, we investigated the effect of the Si/graphite weight ratio in half-cells on the solid electrolyte interphase (SEI) layer's chemistry. The nominal concentrations of active materials were (wt % Si/wt % Gr) 15/73, 30/58, 60/28, and 80/0. The electrolyte in the cells consisted of either 1.2 M LiPF 6 in ethylene carbonate/ethyl methyl carbonate (3:7 by wt) or 1.2 M LiPF 6 in ethylene carbonate:ethyl methyl carbonate (3:7 by wt) + 10 wt % fluoroethylene carbonate. These coin cells were cycled five times at the C/10 rate. As expected, the addition of silicon to the electrode significantly increased the measured capacity. Examination of the aged composite material showed that the electrolyte influenced the concentration of chemical environments on the surface. Depth profiling revealed that these concentrations of surface environments changed with sputtering time. A statistics-of-mixtures model was used to deconvolute how silicon and graphite interacted during the formation of these species and how the interaction changed with depth.

25 ENERGY STORAGE↗
DOE OSTI2023

Bringing high-efficiency silicon solar cells with heterojunction contacts to market with a new, versatile deposition technique

Silicon heterojunction (SHJ) and tunnel-oxide-passivated-contacts (TOPCon) solar cells are the future for silicon technology after passivated-emitter-and-rear-contact (PERC) cells. However, the tool costs (CapEx) for SHJ (TOPCon) make the cell lines more than 2 (1.5) times of the cost of the PERC, which hinders the wide adoption these new technologies despite higher efficiencies. A common challenge for both cell types is that the passivation layers are sensitive to sputter damage. Furthermore, for TOPCon cells, it is desirable to have an inline (instead of batch) process for tunnel oxide and polysilicon to maximize the throughput and thus reduce the operation cost.

14 SOLAR ENERGY↗
DOE OSTI2022

Characterization of Engineered Pinholes in Dielectric Stacks of High-Performance Poly-Silicon Passivating Contacts

Passivating contact structures are expected to be implemented in > 50 % of industrially manufactured silicon photovoltaics produced over the next decade. One type of passivating contact utilizes a c-Si/dielectric/doped poly-Si layer stack. In cases where the dielectric layer/s are thick enough to impede tunneling of charge carriers, it was shown that disruptions (pinholes) in the dielectric are required to facilitate transport.[1] Pinholes in SiOx layers have typically been formed via high temperature annealing that allows localized breakup of this layer. This approach has drawbacks; 1) high temperature annealing increases cost and 2) pinhole formation is sensitive to both the SiOx thickness and wafer surface morphology making control of density and dimensions difficult. Recently, an alternative method of pinhole formation relying on metal assisted chemical etching (MACE) was shown to allow control over pinhole areal densities.[2] Such control is critical as both the density and dimensions of the pinholes determine saturation current density and contact resistivity. The contacts formed with the MACE process are known as polysilicon on locally etched oxide or PLEO and also result in low saturation current densities and low contact resistivity due to SiOx passivation and engineered pinhole enabled charge carrier transport, respectively. Photovoltaic devices with efficiencies greater than 20 % have recently been produced with these contacts, demonstrating the viability of contacts with engineered pinholes. Experimentally, preferential local collection of excess charge carriers has been observed and definitively connected to thermally induced pinholes in thick SiOx layers within c-Si/SiOx/poly-Si contact structures.[3] Recent work has shown that enhanced local collection of excess carriers can result from enhanced diffusion of dopants through pinholes in SiOx layers.[4] This study was restricted to simulation and characterization of poly-Si with the same dopant type as the c-Si substrates. In this work we focus our analysis on boron doped poly-Si with different stacks of dielectric layers (PLEO and PLENO where the N refers to a SiNy layer on top of the SiOx) on n-type crystalline silicon. This provides insight into how engineered pinholes affect charge collection across the p-n junction. Like previous observations of locally enhanced carrier transport through thermally induced pinholes, the EBIC images in Figure 1 shows that engineered pinholes in PLENO (1a) and PLEO (1b) also exhibit locally enhanced carrier transport at pinhole locations (bright spots in the images). We will also present detailed correlative nanoscale structural and chemical analysis using TEM imaging and EELS analysis with sample preparation guided by EBIC imaging. This allows us to connect the density and dimensions of engineered pinholes with charge carrier transport and measured photovoltaic device parameters. Our findings will accelerate the adoption of PLEO and PLENO contacts in industrially manufactured photovoltaic devices.

EBIC↗
DOE OSTI2021

In Situ Synthesis of Graphene-Coated Silicon Monoxide Anodes from Coa-Derived Humic Acid for High-Performance Lithium-Ion Batteries

Silicon monoxide (SiO) is attaining extensive interest amongst silicon-based materials due to its high capacity and long cycle life; however, its low intrinsic electrical conductivity and poor coulombic efficiency strictly limit its commercial applications. Here low-cost coal-derived humic acid (HA) is used as a feedstock to synthesize in-situ graphene-coated disproportionated SiO (D-SiO@G) anode with a facile method. HRTEM and XRD confirm the well-coated graphene layers on an SiO surface. Scanning Transmission X-ray Microscopy (STXM) and X-ray Absorption Near-Edge Structure (XANES) spectra analysis indicate that the graphene coating effectively hinders the side-reactions between the electrolyte and SiO particles . As a result, the D-SiO@G anode presents an initial discharge capacity of 1937.6 mAh g -1 at 0.1 A g -1 and an initial coulombic efficiency (ICE) of 78.2%. High reversible capacity (1023 mAh g -1 at 2.0 A g -1 ), excellent cycling performance ( 72.4% capacity retention after 500 cycles at 2.0 A g -1 ), and rate capability (774 mAh g -1 at 5 A g -1 ) results are substantial. Full coin cells assembled with LiFePO 4 electrodes and D-SiO@G electrodes display impressive rate performance. These results indicate a promising potential for practical use in high-performance lithium-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2024

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗
DOE OSTI2025

Volumetric Additive Manufacturing of Dormant Catalytic Chemistries to Generate Silicone Micro‐ and Millifluidic Devices and Instant Molds

Tomographic volumetric additive manufacturing (T‐VAM) rapidly prints solid objects within minutes, accessing photochemistries that are traditionally challenging for layer‐based additive manufacturing methods. This includes high‐viscosity materials, air‐free chemistries, and solid‐state systems. Catalytic chemistries are appealing as a pathway to engineering advanced materials, including tough thermosets, silicone elastomers, and complex block copolymers. However, photoactivated dormant catalytic chemistries, where the catalyst irreversibly activates upon exposure to light, are incompatible with typical tomographic VAM approaches. To address this limitation, a zero‐dose optimization strategy is devised to preserve dormant catalysts in desired regions by keeping them unexposed to light. VAM printed micro‐ and millifluidic devices and instant molds are successfully produced within minutes in silicones polymerized using photoactivated dormant platinum photohydrosilylation catalysts. The printed channels are programmed to be 500 and 2500 µm for the micro‐ and millifluidic devices, and print fidelity is assessed by X‐ray computed tomography. This work demonstrates the potential of zero‐dose optimization to expand the range of chemistries accessible for VAM, enabling the rapid fabrication of complex devices.

Additive Manufacturing↗