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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Picone, S.↗
DOE OSTI2025

Dual interfacial H-bonding-enhanced deep-blue hybrid copper–iodide LEDs

Solution-processed light-emitting diodes based on non-toxic copper–iodide hybrids are a compelling solution for efficient and stable deep-blue lighting, owing to their tunability, high photoluminescence efficiency and environmental sustainability. Here we present a hybrid copper–iodide that shows near-unity photoluminescence quantum yield (99.6%) with an emission wavelength of 449 nm and colour coordinates (0.147, 0.087), alongside its emission mechanism and charge transport characteristics. Here, we use the thin film of this hybrid as the sole active emissive layer to fabricate deep-blue light-emitting diodes and subsequently enhance the device performance through a dual interfacial hydrogen-bond passivation strategy. This synergetic surface modification approach, integrating a hydrogen-bond-acceptor self-assembled monolayer with an ultrathin polymethyl methacrylate capping layer, effectively passivates both heterojunctions of the copper–iodide hybrid emissive layer and optimizes charge injections. We achieve a maximum external quantum efficiency of 12.57%, a maximum luminance of 3,970.30 cd m −2 with colour coordinates (0.147, 0.091) and an excellent operational stability (half-lifetime) of 204 hours under ambient conditions. We further showcase a large-area device of 4 cm 2 that maintains high efficiency. Our findings reveal the potential of copper–iodide-based hybrid materials for applications in solid-state lighting and display technologies, offering a versatile strategy for enhancing device performances.

14 SOLAR ENERGY↗
DOE OSTI2024

Non-covalent planarizing interactions yield highly ordered and thermotropic liquid crystalline conjugated polymers

Controlling the multi-level assembly and morphological properties of conjugated polymers through structural manipulation has contributed significantly to the advancement of organic electronics. In this work, a redox active conjugated polymer, TPT–TT, composed of alternating 1,4-(2-thienyl)-2,5-dialkoxyphenylene (TPT) and thienothiophene (TT) units is reported with non-covalent intramolecular S⋯O and S⋯H–C interactions that induce controlled main-chain planarity and solid-state order. As confirmed by density functional theory (DFT) calculations, these intramolecular interactions influence the main chain conformation, promoting backbone planarization, while still allowing dihedral rotations at higher kinetic energies (higher temperature), and give rise to temperature-dependent aggregation properties. Thermotropic liquid crystalline (LC) behavior is confirmed by cross-polarized optical microscopy (CPOM) and closely correlated with multiple thermal transitions observed by differential scanning calorimetry (DSC). This LC behavior allows us to develop and utilize a thermal annealing treatment that results in thin films with notable long-range order, as shown by grazing-incidence X-ray diffraction (GIXD). Specifically, we identified a first LC phase, ranging from 218 °C to 107 °C, as a nematic phase featuring preferential face-on π–π stacking and edge-on lamellar stacking exhibiting a large extent of disorder and broad orientation distribution. A second LC phase is observed from 107 °C to 48 °C, as a smectic A phase featuring sharp, highly ordered out-of-plane lamellar stacking features and sharp tilted backbone stacking peaks, while the structure of a third LC phase with a transition at 48 °C remains unclear, but resembles that of the solid state at ambient temperature. Furthermore, the significance of thermal annealing is evident in the ∼3-fold enhancement of the electrical conductivity of ferric tosylate-doped annealed films reaching 55 S cm −1 . More importantly, thermally annealed TPT–TT films exhibit both a narrow distribution of charge-carrier mobilities (1.4 ± 0.1) × 10 −2 cm 2 V −1 s −1 along with a remarkable device yield of 100% in an organic field-effect transistor (OFET) configuration. This molecular design approach to obtain highly ordered conjugated polymers in the solid state affords a deeper understanding of how intramolecular interactions and repeat-unit symmetry impact liquid crystallinity, solution aggregation, solution to solid-state transformation, solid-state morphology, and ultimately device applications.

Chemistry↗
NASA NTRS1980

Si and GaAs photocapacitive MIS infrared detectors

Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.

Sher, A.↗
NASA NTRS1988

Circular-Waveguide Power Combiner/Divider

Power combiner/divider devised in which output from several solid-state modules combined directly into TE01 mode of circular waveguide. Results in low-loss, wide band device: because axisymmetry of TE01 mode, no essential limit on N. Latter feature is advantage in design of wide band, high-power, solid-state amplifiers operating at millimeter wavelengths.

Dunn, Vernon↗
DOE OSTI2026

Self-aligned heterogeneous quantum photonic integration

Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Uranus rings - An optical search

The discovery of rings surrounding Uranus has prompted reexamination of telescopic observations made a year ago with a solid-state area detector called a charge-coupling device (CCD). The extreme narrowness of the rings apparently caused them to be hidden in glare from the planet, the reflectivity of which is very high in the blue and green regions of the spectrum. However, Uranus appears as a much darker image in the near-infrared spectral regions detected by the CCD. Although no direct evidence of the rings is obtainable from the CCD images, some simplifying assumptions permit the deduction from the CCD data that average reflectivity of individual particles composing the rings is at most a few percent, much closer to that of carbonaceous chondritic material than to that of the ice-coated particles in Saturn's rings.

Smith, B. A.↗
NASA NTRS1977

Multi-cell battery protection system

A multi-cell battery protection system is described wherein each cell has its own individual protective circuit. The protective circuits consist of a solid state comparator unit and a high current switching device such as a relay. The comparator units each continuously monitor the associated cell and when the cell voltage either exceeds a predetermined high level or falls below a predetermined low level, the relay is actuated whereby a bypass circuit is completed across the cell thereby effectively removing the cell from the series of cells.

Thomas, R. D.↗
NASA NTRS1984

Power

The space station requires an increase in power or energy of at least several orders of magnitude compared to previous space missions. With the requirement up in the range of 10 kilowatt hours, this obviiously requires the development of new technology. Although the power area is very well integrated in the spacecraft itself, it represents a diverse set of components necessary for energy conversion, electronics, and energy distribution. Considerable work is ongoing at NASA Lewis in the power devices development area, including transformers, large area solid-state chips, transistors, and fast recovery diodes. This work is oriented toward eventual application to both AC and DC power conversion approaches. In the energy storage area, there are many options available to fit into the space station representing various degrees of risk and leverage combination, such as the near-term integral-pressure-vessel nickel hydrogen battery, an advanced Ni-H2 battery concept, and the regenrative hydrogen-oxygen system utilizing essentially the Shuttle orbiter type of fuel cell.

Corbett, R.↗
NASA NTRS2004

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Freeman, Jon C.↗
NASA NTRS1985

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Tombrello, Thomas A.↗
NASA NTRS2019

Specific Impulse of Electric Solid Propellant in an Electrothermal Ablation-Fed Pulsed Plasma Thruster

Electric solid propellants are advanced solid chemical rocket propellants that can be controlled (ignited, throttled, and extinguished) through the application and removal of an electric current. Recent work has focused on application of this propellant in an electrothermal ablation-fed pulsed plasma thruster. In this paper, impulse bit measurements in such devices fed by either the electric solid propellant or a traditional state-of-the-art propellant, polytetrafluoroethylene, are expanded upon. It is demonstrated that a surface layer in the hygroscopic electric solid propellant is rapidly ablated over the first few discharges of the device, which correspondingly decreases specific impulse relative to the traditional polytetrafluoroethylene propellant. Correcting these data by subtracting the early discharge ablation mass loss measurements yields a corrected electric solid propellant specific impulse of approximately 300 s. As the test duration increases to a large number of discharges, and the initial mass loss is a reduced fraction of the total, the effect of absorbed water in the propellant is decreased and the specific impulse without any corrections approaches the corrected 300 s value.

Glascock, Matthew S.↗
NASA NTRS1976

Solid state television camera (CCD-buried channel)

The development of an all solid state television camera, which uses a buried channel charge coupled device (CCD) as the image sensor, was undertaken. A 380 x 488 element CCD array is utilized to ensure compatibility with 525 line transmission and display monitor equipment. Specific camera design approaches selected for study and analysis included (a) optional clocking modes for either fast (1/60 second) or normal (1/30 second) frame readout, (b) techniques for the elimination or suppression of CCD blemish effects, and (c) automatic light control and video gain control (i.e., ALC and AGC) techniques to eliminate or minimize sensor overload due to bright objects in the scene. Preferred approaches were determined and integrated into a deliverable solid state TV camera which addressed the program requirements for a prototype qualifiable to space environment conditions.

Source record↗
DOE OSTI2026

Low-Threshold Visible-to-Ultraviolet Solid-State Triplet-Fusion Upconversion

Visible-to-ultraviolet (UV) triplet-triplet annihilation (TTA) upconversion is an energy-relevant photon-management strategy that converts visible photons into UV photons capable of driving high-energy photochemical processes. Practical implementation requires solid-state thin films, which often require high excitation power. Here, we demonstrate the first solid-state visible-to-UV TTA upconversion thin-film device, using 1,4-bis((tricyclopentylsilyl)ethynyl)naphthalene (TCPS-NAP) as the annihilator and tris(2-phenylpyridine)iridium(III) (Ir(ppy) 3 ) as the sensitizer on silver. Under incoherent 455 nm excitation, the device exhibits blue-to-UV upconversion with a threshold of 4.8 mW/cm 2 . Using surface plasmons in the planar silver film, we achieve green-to-UV upconversion with a 1.11 eV anti-Stokes shift and 6.9 mW/cm 2 threshold, a 12.2 × threshold enhancement over far-field 532 nm excitation. In solution, TCPS-NAP shows excimer-dominated anti-Stokes emission rather than UV upconversion. These results establish a platform for harvesting low-intensity visible light to drive UV processes while demonstrating that solution-phase screening does not predict solid-state upconversion performance.

Luminescence↗
NASA NTRS2006

Carbon-Nanotube Schottky Diodes

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Manohara, Harish↗
NASA NTRS2017

Low and High-Power Inductive Pulsed Plasma Thruster Development Testing at NASA-MSFC

The inductive pulsed plasma thruster (IPPT) is an electromagnetic plasma accelerator that has been identified in NASA roadmaps as an enabling propulsion technology for some niche low-power missions and for high-power in-space propulsion needs. The IPPT is an electrodeless space propulsion device where a capacitor is charged to an initial voltage and then discharged producing a high current pulse through a coil. The field produced by this pulse ionizes propellant, inductively driving current in a plasma located near the face of the coil. Once the plasma is formed it can be accelerated and expelled at a high exhaust velocity by the electromagnetic Lorentz body force arising from the interaction of the induced plasma current and the magnetic field produced by the current in the coil. Thrusters of this type possess many demonstrated and potential benefits that make them worthy of continued investigation. The electrodeless nature of these thrusters eliminates the lifetime and contamination issues associated with electrode erosion in conventional electric thrusters. Also, a wider variety of propellants are accessible when compatibility with metallic electrodes in no longer an issue. IPPTs have been successfully operated using propellants like ammonia, hydrazine, and CO2, and there is no fundamental reason why they would not operate on other in situ propellants like H2O. It is well-known that pulsed accelerators can maintain constant specific impulse (I(sub sp)) and thrust efficiency (eta(sub t)) over a wide range of input power levels by adjusting the pulse rate to hold the discharge energy per pulse constant. It has also been demonstrated that an inductive pulsed plasma thruster can operate in a regime where eta(sub t) is relatively constant over a wide range of I(sub sp) values (3000-8000 s). Finally, thrusters in this class have operated in single-pulse mode at high energy per pulse, and by increasing the pulse rate they offer the potential to process very high levels of power using a single thruster. There has been significant previous research on IPPTs designed around a planar-coil (flat-plate) geometry. The most notable of these was the Pulsed Inductive Thruster (PIT), with the PIT MkV presently representing the state-of- the-art in pulsed high-power IPPT technological development. In this paper, we focus on two planar-geometry devices that operate at significantly different power levels. Most work performed at NASA-Marshall Space Flight Center (MSFC) has, to date, focused on lower power thruster operation (approx. = 10s to 100s of J/pulse, up to 2-2.5 kW average power throughput) and previously described. The most recent work aimed to assemble a device that could be tested in cyclic mode on a thrust-stand, and which could augment the existing data set for IPPTs. In addition, the thruster was designed to serve as a test-bed for solid state switching circuitry and pulsed gas valves, with the modular design of the device allowing for variation in or upgrades to test configuration. Recently, MSFC obtained on loan from the Georgia Institute of Technology (Atlanta, GA) the PIT MkVI, successor to the PIT MkV. The MkV and MkVI are similar in design with much of the hardware from the former, specifically the capacitors and spark-gap switches, being reused in the latter. The coil is similar in geometry but has bent copper rods used in the latest iteration in place of the Litz wire windings found in the MkV. The MkVI master switch for the spark gaps is located in the vacuum chamber contained within a sealed, pressurized vessel fastened to the back of the thruster. This is different from the MkV where many capacitor charging lines and spark gap-triggering delay lines ran to the thruster from a master trigger located outside the vacuum chamber. The MkVI was damaged during testing soon after its fabrication was completed. The thruster arrived at MSFC still-damaged and mostly disassembled into many individual pieces. The device has been repaired, with a few additional design changes implemented after discussions with the late Prof. Lovberg regarding the initial testing results and issues encountered. In the present work, we present results from testing of both the small IPPT and the larger MkVI thruster. The smaller device (Fig. 1) is tested on a thrust stand on multiple gases to demonstrate its capability to operate in a repetition-rate mode and serve as a IPPT technology-development testbed. The larger MkVI (Fig. 2) is operated for the first time in its newly reconstituted state, demonstrating full-power pulsed operation and, for the first time, repetition-rate operation of a high-power IPPT. The additional upgrades required for synchronous operation of all the pulsed systems in single-pulse and repetition-rate mode are described in detail.

Polzin, Kurt A.↗
NASA NTRS2018

Inductive Pulsed Plasma Thruster Development Testing at NASA-MSFC

The inductive pulsed plasma thruster (IPPT) is an electromagnetic plasma accelerator that has been identified in NASA roadmaps as an enabling propulsion technology for some niche low-power missions and for high-power in-space propulsion needs. The IPPT is an electrodeless space propulsion device where a capacitor is charged to an initial voltage and then discharged producing a high current pulse through a coil. The field produced by this pulse ionizes propellant, inductively driving current in a plasma located near the face of the coil. Once the plasma is formed it can be accelerated and expelled at a high exhaust velocity by the electromagnetic Lorentz body force arising from the interaction of the induced plasma current and the magnetic field produced by the current in the coil. Thrusters of this type possess many demonstrated and potential benefits that make them worthy of continued investigation. The electrodeless nature of these thrusters eliminates the lifetime and contamination issues associated with electrode erosion in conventional electric thrusters. Also, a wider variety of propellants are accessible when compatibility with metallic electrodes in no longer an issue. IPPTs have been successfully operated using propellants like ammonia, hydrazine, and CO2, and there is no fundamental reason why they would not operate on other in situ propellants like H2O. It is well-known that pulsed accelerators can maintain constant specific impulse (I(sub sp)) and thrust efficiency (η(sub t)) over a wide range of input power levels by adjusting the pulse rate to hold the discharge energy per pulse constant. It has also been demonstrated that an inductive pulsed plasma thruster can operate in a regime where η(sub t) is relatively constant over a wide range of I(sub sp) values (3000-8000 s). Finally, thrusters in this class have operated in single-pulse mode at high energy per pulse, and by increasing the pulse rate they offer the potential to process very high levels of power using a single thruster. There has been significant previous research on IPPTs designed around a planar-coil (flat-plate) geometry. The most notable of these was the Pulsed Inductive Thruster (PIT), with the PIT MkV presently representing the state of- the-art in pulsed high-power IPPT technological development. In this paper, we focus on two planar-geometry devices that operate at significantly different power levels. Most work performed at NASA-Marshall Space Flight Center (MSFC) has, to date, focused on lower power thruster operation (≈ 10s to 100s of J/pulse, up to 2-2.5 kW average power throughput) and previously described in Refs. [5,6]. The most recent work aimed to assemble a device that could be tested in cyclic mode on a thrust-stand, and which could augment the existing data set for IPPTs. In addition, the thruster was designed to serve as a test-bed for solid state switching circuitry and pulsed gas valves, with the modular design of the device allowing for variation in or upgrades to test configuration. Recently, MSFC obtained on loan from the Georgia Institute of Technology (Atlanta, GA) the PIT MkVI, successor to the PIT MkV. The MkV and MkVI are similar in design with much of the hardware from the former, specifically the capacitors and spark-gap switches, being reused in the latter. The coil is simliar in geometry but has bent copper rods used in the latest iteration in place of the Litz wire windings found in the MkV. The MkVI master switch for the spark gaps is located in the vacuum chamber contained within a sealed, pressurized vessel fastened to the back of the thruster. This is different from the MkV where many capacitor charging lines and spark gap-triggering delay lines ran to the thruster from a master trigger located outside the vacuum chamber. The MkVI was damaged during testing soon after its fabrication was completed. The thruster arrived at MSFC still-damaged and mostly disassembled into many individual pieces. The device has been repaired, with a few additional design changes implemented after discussions with the late Prof. Lovberg regarding the initial testing results and issues encountered.

Polzin, Kurt A.↗
NASA NTRS1974

Load insensitive electrical device

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Schwarz, F. C.↗