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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

"Genetically Engineered" Nanoelectronics

The quantum mechanical functionality of nanoelectronic devices such as resonant tunneling diodes (RTDs), quantum well infrared-photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs) is enabled by material variations on an atomic scale. The design and optimization of such devices requires a fundamental understanding of electron transport in such dimensions. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory. NEW was combined with a parallelized genetic algorithm package (PGAPACK) to evolve structural and material parameters to match a desired set of experimental data. A numerical experiment that evolves structural variations such as layer widths and doping concentrations is performed to analyze an experimental current voltage characteristic. The genetic algorithm is found to drive the NEMO simulation parameters close to the experimentally prescribed layer thicknesses and doping profiles. With such a quantitative agreement between theory and experiment design synthesis can be performed.

Klimeck, Gerhard↗
NASA NTRS1986

The 60 GHz IMPATT diode development

The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.

Dat, Rovindra↗
DOE OSTI2021

Graded Buffer Bragg Reflectors with High Reflectivity and Transparency for Metamorphic Optoelectronics

A graded buffer Bragg reflector (GBBR) is a bifunctional device component that provides the reflection of a distributed Bragg reflector and the adjustable lattice constant of a compositionally graded buffer. Prior work showed that these properties can be combined with low threading dislocation density and high reflectivity. Here, we design and demonstrate complex GBBRs for specific metamorphic solar cell applications. We design buffers that provide (1) high reflectivity over a narrow bandwidth, for quantum well solar cells, (2) reflectivity over a wide bandwidth, for optically thin solar cells, and (3) low sidelobe reflection, for multijunction devices that demand low out-of-band reflection. Apodized and triple GBBRs are demonstrated, and transparency is always considered, requiring designs with carefully engineered material combinations. A GBBR with a reflection of 99% is demonstrated, as well as a triple GBBR that has over 80% reflection for 100?nm of the spectrum around 800?nm. We also analyze potential deviations in a baseline GBBR from that of a perfect DBR using transmission electron microscopy to analyze imperfections in the material and modeling to analyze the impact of imperfect refractive index data for lattice-mismatched AlGaInAs. Minimal crosshatch roughness and unintentional thickness variation occur throughout the buffer, which likely influences reflection slightly. Small deviations between the calculated AlGaInAs and utilized AlGaAs refractive index exist, giving methods for future GBBR improvement. While the GBBR designs are intended for metamorphic solar cells, the broad and high reflection may also be useful for other optoelectronic devices such as light-emitting diodes or lasers.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS1974

Harmonic mixing characteristics of metal-barrier-metal junctions as predicted by electron tunneling

The bias dependence of the nonlinear mixing characteristics of metal-barrier-metal junction currents is deduced assuming an electron tunneling model. The difference-frequency beat voltage at frequency omega sub 1 - (n x omega sub 2), when n is an integer and omega sub 1 and omega sub 2 are the assumed frequencies of two induced currents, is found to have n zeros as the diode bias is varied. Recent experimental observations have demonstrated such characteristics.

Faris, S. M.↗
NASA NTRS1984

The 12 micron band of ethane - High-resolution laboratory analysis with candidate lines for infrared heterodyne searches

Attention is given to the results of a laboratory study of the v9 band of ethane at 12 microns, using both high resolution Fourier transform and diode laser absorption spectroscopy. The analysis to which about 2000 transitions in this band have been subjected includes the normal rotational terms as well as the higher order effects of l-doubling, l-resonance, internal rotation, and a Coriolis resonance with the 3v4 state. A model is presented for the v9 band which is able to reproduce the observed features to an accuracy of better than 0.001/cm, and a list has been compiled for v9 transitions, occurring near C-14O2 laser lines, that are good candidates for laser heterodyne searches.

Atakan, A. K.↗
NASA NTRS1992

A submillimeter tripler using a quasi-waveguide structure

A new type of frequency multiplier structure is being developed which is suitable for application at frequencies above 1 THz. This structure preserves some of the properties of waveguide for mode control, yet is not truly single mode. The device resembles a sectoral horn, with a varactor diode mounted near the throat. Input and output coupling are through the same aperture, requiring a quasi-optical diplexer. Initial tests are directed at building a tripler at 500 GHz, for comparison with waveguide structures. The diplexer is a blazed diffraction grating with appropriate focusing optics. Model studies show that the impedance match to a varactor should be good, and initial tests of the beam patterns of the prototype indicate that optical coupling efficiency should be very high. The structure also has the potential for use as a fundamental mixer, or as a third harmonic mixer.

Erickson, Neal R.↗
NASA NTRS2011

Pressure-Sensitive Paint Measurements on the NASA Common Research Model in the NASA 11-ft Transonic Wind Tunnel

The luminescence lifetime technique was used to make pressure-sensitive paint (PSP) measurements on a 2.7% Common Research Model in the NASA Ames 11ft Transonic Wind Tunnel. PSP data were obtained on the upper and lower surfaces of the wing and horizontal tail, as well as one side of the fuselage. Data were taken for several model attitudes of interest at Mach numbers between 0.70 and 0.87. Image data were mapped onto a three-dimensional surface grid suitable both for comparison with CFD and for integration of pressures to determine loads. Luminescence lifetime measurements were made using strobed LED (light-emitting diode) lamps to illuminate the PSP and fast-framing interline transfer cameras to acquire the PSP emission.

Bell, James H.↗
DOE OSTI2020

Localized Excitons in NbSe 2 -MoSe 2 Heterostructures

Neutral and charged excitons (trions) in atomically thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe 2 -MoSe 2 vdW hetero- structures, which provide an important model system to study metal–semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy, we discover a sharp emission feature, L1, that is localized at the NbSe 2 -capped regions of MoSe 2 . L1 is observed at energies below the commonly studied MoSe 2 excitons and trions and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. This PL feature is robust, observed in a variety of samples fabricated with different stacking geometries and cleaning procedures. Using first-principles calculations, we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe 2 and NbSe 2 -MoSe 2 heterostructure. Here, we discuss the implications of our studies for atomically thin optoelectronics devices with atomically sharp interfaces and tunable electronic structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1973

Proton-radiation damage in Gunn oscillators

The irradiation effects of 22 MeV protons on the electrical characteristics of GaAs continuous-wave Gunn oscillators was studied. The radio frequency power output was reduced by 3 decibels at proton fluences in the neighborhood of 1.5 x 10 to the 12th power protons/sq cm. Conductance measurements indicate that the carrier removal rate at high electric fields remained roughly 40 percent less than at low fields. Diode efficiencies of two device groups were found to be monotonically descreasing functions of fluence. Frequency modulation noise was generally unaffected by radiation, but the magnitude of the noise in the noise power spectrum increased significantly. These effects are partially accounted for, in a qualitative fashion, by a model of electron traps having field-dependent net-carrier capture rates and various response times.

Johnson, J. W.↗
NASA NTRS1978

Laser velocimetry with diode junctions semiconductor lasers

Measurements of mean and fluctuating axial velocity have for the first time been made in a seeded pipe flow with a semiconductor laser velocimeter. Several compact velocimeters have been constructed using laser diodes. While the intended applications have restricted the final instrument to operate in a coaxial backscatter mode, operation has been demonstrated in forward and side scattering modes. In all cases the instrument could be classed as dual beam. An instrument has been constructed to be installed in a model airfoil and will be mechanically driven to measure the flow over a 75-mm chord distance. The instrument occupies a volume measuring 100 mm x 100 mm x 40 mm. The compactness has been aided by using an avalanche photodiode instead of a photomultiplier tube.

Franke, J. M.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗
NASA NTRS2002

A Low LET Radiation Spectrometer for Measuring Particle Doses in Space and Aircraft

This paper presents experimental data that demonstrates the feasibility of fabricating a miniature nuclear particle dosimeter for monitoring doses in aircraft and satellites. The basic instrument is a Low Linear-Energy-Transfer (LET) Radiation Spectrometer (LoLRS) that is designed to measure the energy deposited by particles with low LET values. The heart of the instrument is a Silicon-Lithium Drifted Diode (SLDD). Test results show that the LoLRS can be used to monitor the radiation threat to personnel in flights of space- and aircraft and also to generate a comprehensive data base from aviation and satellite measurements that can contribute to the formulation of more accurate environmental radiation models for dose predictions with reduced uncertainty factors.

Stassinopoulos, E. G.↗
NASA NTRS2005

Miniature Loop Heat Pipe with Multiple Evaporators for Thermal Control of Small Spacecraft

This paper presents an advanced miniature heat transport system for thermal control of small spacecraft. The thermal system consists of a loop heat pipe (LHP) with multiple evaporators and multiple deployable radiators for heat transfer, and variable emittance coatings on the radiators for performance enhancement. Thermoelectric coolers are used to control the loop operating temperature. The thermal system combines the functions of variable conductance heat pipes, thermal switches, thermal diodes, and the state-of-the-art LHPs into a single integrated thermal system. It retains all the performance characteristics of state-of-the-art LHPs and offers additional advantages to enhance the functionality, performance, versatility, and reliability of the system. Steady state and transient analytical models have been developed, and scaling criteria have also been established. A breadboard unit has been built for functional testing in laboratory and thermal vacuum environments. Experimental results show excellent performance of the thermal system and correlate very well with theoretical predictions.

Ku, Jentung↗
NASA NTRS2012

Airborne Measurements of Atmospheric Pressure made Using an IPDA Lidar Operating in the Oxygen A-Band

We report airborne measurements of atmospheric pressure made using an integrated path differential absorption (IPDA) lidar that operates in the oxygen A-band near 765 nm. Remote measurements of atmospheric temperature and pressure are needed for NASA s Active Sensing of CO2 Emissions Over Nights, Days, and Seasons (ASCENDS) mission to measure atmospheric CO2. Accurate measurements of tropospheric CO2 on a global scale are very important in order to better understand its sources and sinks and to improve our predictions of climate change. The goal of ASCENDS is to determine the CO2 dry mixing ratio with lidar measurements from space at a level of ~1 ppm. Analysis to date shows that with current weather models, measurements of both the CO2 column density and the column density of dry air are needed. Since O2 is a stable molecule that uniformly mixed in the atmosphere, measuring O2 absorption in the atmosphere can be used to infer the dry air density. We have developed an airborne (IPDA) lidar for Oxygen, with support from the NASA ESTO IIP program. Our lidar uses DFB-based seed laser diodes, a pulsed modulator, a fiber laser amplifier, and a non-linear crystal to generate wavelength tunable 765 nm laser pulses with a few uJ/pulse energy. The laser pulse rate is 10 KHz, and average transmitted laser power is ~20 mW. Our lidar steps laser pulses across a selected line O2 doublet near 764.7 nm in the Oxygen A-band. The direct detection lidar receiver uses a 20 cm diameter telescope, a Si APD detector in Geiger mode, and a multi-channel scalar to detect and record the time resolved laser backscatter in 40 separate wavelength channels. Subsequent analysis is used to estimate the transmission line shape of the doublet for the laser pulses reflected from the ground. Ground based data analysis allows averaging from 1 to 60 seconds to increase SNR in the transmission line shape of the doublet. Our retrieval algorithm fits the expected O2 lineshapes against the measurements and determines the atmospheric pressure by minimizing the error between the observations and model. We first demonstrated our airborne lidar during flights during summer 2010. We made several improvements and made measurements during the Ascends flights during July 2011. More information about the technique, lidar instrument, airborne measurements, and pressure estimates will be described in the presentation.

Riris, Haris↗
NASA NTRS1988

Gaussian approximation versus nearly exact performance analysis of optical communication systems with PPM signaling and APD receivers

A 25-Mb/s direct-detection optical communication system that used Q = 4 PPM (pulse-position modulation) signaling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode (lambda = 834 nm) and low-noise silicon avalanche photodiode (APD). A procedure for numerically computing system performance is given that uses the nearly exact Webb approximation of the true Conradi distribution for the APD output and does not require excessive amounts of computer time. Comparison revealed that modeling the APD ouptut as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain and overestimates of system bit error probability. Examples illustrate the breakdown of the Gaussian approximation in assessing system performance. The measured performance was in excellent agreement with that predicted by the computational procedure. The system achieved a bit error probability of 10 to the -6 at a received signal energy, corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

Davidson, Frederic M.↗
NASA NTRS2016

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

Wright, Kenneth H., Jr.↗
DOE OSTI2024

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50–320 K)-dependent current density–voltage, capacitance–voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height (φbo) varied from 0.31 to 1.28 eV. The temperature-dependent n and φbo indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method.

Engineering↗