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DOE OSTI2021

Impact of KOH on the interfacial precipitation rates of C-S-H during the early hydration of C3S

In this work we investigated the influence of alkalis on the hydration of two triclinic samples of C{sub 3}S. One pure C{sub 3}S and one Al-doped C{sub 3}S (0.5 wt.‐% Al{sub 2}O{sub 3}). We added differently concentrated KOH solutions representing alkalis in the pore solution, which lead to an increase of the interfacial precipitation rates of C-S-H during the hydration of C{sub 3}S compared to the hydration without KOH. Isothermal calorimetry was conducted for the determination of the rates of reaction during the hydration process and ICP-OES measurements for the determination of the pore solution composition at certain times of hydration. The increasing effect of KOH solution on the calculated interfacial precipitation rates from pore solution data can explain the enhancement of the rates of reaction recorded by heat flow calorimetry during the early hydration. Therefore, the interfacial precipitation rates of C-S-H can accurately describe the acceleration effect of alkalis on the early hydration of C{sub 3}S.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Two-component electronic phase separation in the doped Mott insulator Y 1-x Ca x TiO 3

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. Several theoretical proposals aimed to elucidate this phenomenon have been put forth, a notable one being phase separation and an associated percolation-induced Mott insulator-metal transition. In the present work we study the prototypical doped Mott-insulating rare-earth titanate YTiO 3 , in which the insulating state survives up to a large hole concentration of 35%. Single crystals of Y 1-x Ca x TiO 3 with 0 ≤ x ≤ 0.5, spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with DFT+U calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the insulating x = 0 and metallic x ~ 0.5 states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the doping-induced insulator-metal transition in Y 1-x Ca x TiO 3 is indeed percolative in nature, and thus of inherent first-order character.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Luminescence Quenching via Deep Defect States: A Recombination Pathway via Oxygen Vacancies in Ce-Doped YAG

Luminescence quenching via nonradiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for conversion efficiency and device lifetimes. In materials such as Ce-doped yttrium aluminum garnet (YAG:Ce), quenching shows strong dependence on both temperature and activator concentration, limiting the fabrication of high-intensity white-light emitting diodes with high operating temperatures. Here, we reveal by means of first-principles calculations an efficient recombination mechanism in YAG:Ce that involves oxygen vacancies and gives rise to thermally activated concentration quenching. We demonstrate that the key requirements for this mechanism to be active are localized states with strong electron-phonon coupling. These conditions are commonly found for intrinsic defects such as anion vacancies in wide band gap materials. The present findings are therefore relevant to a broad class of optical materials and shine light on thermal quenching mechanisms in general.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Chern Fermi pocket, topological pair density wave, and charge-4e and charge-6e superconductivity in kagomé superconductors

Abstract The recent discovery of novel charge density wave (CDW) and pair density wave (PDW) in kagomé lattice superconductors A V 3 Sb 5 ( A = K, Rb, Cs) hints at unexpected time-reversal symmetry breaking correlated and topological states whose physical origin and broader implications are not understood. Here, we make conceptual advances toward a mechanism behind the striking observations and new predictions for novel macroscopic phase coherent quantum states. We show that the metallic CDW state with circulating loop currents is a doped orbital Chern insulator near van Hove filling. The emergent Chern Fermi pockets (CFPs) carry concentrated Berry curvature and orbital magnetic moment. We find that the pairing of electrons on the CFPs leads to a superconducting state with an emergent vortex-antivortex lattice and the formation of a complex triple- Q PDW. A plethora of correlated and topological states emerge, including a never-before-encountered chiral topological PDW superconductor, a loop-current pseudogap phase, and vestigial charge-4 e and charge-6 e superconductivity in staged melting of the vortex-antivortex lattice and hexatic liquid crystal. Our findings reveal previously unknown nature of the superconducting state of a current-carrying Chern metal, with broad implications for correlated and topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Characterization of actinide abundances and isotopic compositions by HR-ICP-MS. Part 2: Results from actinide doping studies

Previously, we presented actinide isotopic and elemental data from fallout melt glass that was measured using high-resolution inductively coupled plasma mass spectrometry (HR-ICP-MS). Direct comparison between these measurements and ‘gold standard’ data obtained by multi-collector ICP-MS showed broad overlap, indicating that HR-ICP-MS is a potentially valuable technique for producing actinide elemental and isotopic data on a relatively rapid timescale. To test the usefulness of this technique further, we doped varying amounts of uranium certified reference materials (CRMs) into a rhyolitic rock standard to establish the effects of uranium concentration and isotopic composition on the accuracy of uranium isotopic analyses by HR-ICP-MS. This also enabled us to quantify peak tailing effects from 238 U on the measurement of 239 Pu and 237 Np, which in turn allows us to constrain correction factors based on measured 237 Np/ 238 U and 239 Pu/ 238 U ratios. A second doping study involved the addition of a mixed actinide standard into three samples with different matrix compositions (termed soil, city, and seawater) to assess whether sample chemistry affects the accuracy and precision of these analyses. Results suggest that this is not the case. Systematic offsets were not observed in elemental or isotopic data derived from the three matrix samples. Results indicate that useful actinide isotopic data can be obtained from whole rock solutions by HR-ICP-MS. Our findings also have implications for solid sampling techniques such as laser ablation ICP-MS, which do not require sample dissolution.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

DOE OSTI2023

Critical Current Densities and n-Values of MgB 2 Conductors for SMES, MRI, and Low AC Loss Applications

Multifilamentary MgB 2 strands (filament numbers 36 to 114) prepared by the in-situ power-in-tube (PIT) route with carbon doping contents of 0, 2, and 3.2% were wound on barrels for transport J c and n -value measurement at 4.2 K in fields of up to 12 T. The strand and gauge lengths were 1 m and 0.5 m. Heat treatments at 675 °C and 650 °C centered around the melting point of Mg (650 °C) and both utilized the liquid-solid reaction. A pair of strands, with and without 2% C doping exhibited the J c (B) crossover effect. Here studied were the dependencies of J c on field strength, dopant concentration, and cabling and the dependence of n -value on field strength.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Electrochemical Removal of Se(IV) from Wastewater Using RuO2‑Based Catalysts

The removal of selenite (SeO32-) from water is challenging due to the risk of secondary pollutants. To address this, we developed RuO2-based nanocatalysts on the titanium plate (RuO2/TP) for direct electrochemical reduction of Se(IV) to elemental selenium [Se(0)]. Optimizing Sn doping in RuO2 nanoparticles to induce charge redistribution enabled the Ru0.9Sn0.1Ox/TP catalyst to achieve ∼90% Se(IV) removal across concentrations of 0.1, 1, and 10 mM at -2 mA cm-2 over 8 h, outperforming undoped RuO2/TP. Furthermore, Ru0.9Sn0.1Ox/TP also maintained ∼90% removal efficiency in 1 mM of Se(IV) solutions containing competitive anions (0.5 M Cl-, 0.1 M SO42-, 0.01 M NO3-, and their mixtures), demonstrating suitability for complex wastewater treatment. Importantly, the catalysts were recyclable, with no observable contamination introduced into the solution. Density functional theory (DFT) calculations suggest that Sn doping effectively reduces the energy barrier for the reduction of Se(IV) to Se(0).

Hao, Shaoyun↗

DOE OSTI2022

Role of Sr doping and external strain on relieving bottleneck of oxygen diffusion in La 2- x Sr x CuO 4-δ

In many complex oxides, the oxygen vacancy formation is a promising route to modify the material properties such as a superconductivity and an oxygen diffusivity. Cation substitutions and external strain have been utilized to control the concentration and diffusion of oxygen vacancies, but the mechanisms behind the controls are not fully understood. Using first-principles calculations, we find how Sr doping and external strain greatly enhances the diffusivity of oxygen vacancies in La 2-x Sr x CuO 4-δ (LSCO) in the atomic level. In hole-doped case (2x > δ), the formation energy of an apical vacancy in the LaO layer is larger than its equatorial counterpart by 0.2 eV that the bottleneck of diffusion process is for oxygen vacancies to escape equatorial sites. Such an energy difference can be reduced and even reversed by either small strain (< 1.5%) or short-range attraction between Sr and oxygen vacancy, and in turn, the oxygen diffusivity is greatly enhanced. For fully compensated hole case (2x ≦ δ), the formation energy of an apical vacancy becomes too high that most oxygen vacancies cannot move but would be trapped at equatorial sites. From our electronic structure analysis, we found that the contrasting change in the formation energy by Sr doping and external strain is originated from the different localization natures of electron carrier from both types of oxygen vacancies.

25 ENERGY STORAGE↗

DOE OSTI2025

Chromium-doped uranium dioxide fuels: A review

UO 2 doped with parts per million CR 2 O 3 powder is considered a potential near term accident tolerant fuel candidate. Here, the results of decades of industry and academic research into Cr-doped UO 2 are analyzed and their shortcomings are critiqued. Focusing on the incorporation mechanisms of Cr into the fuel matrix, we explore a mechanistic understanding of the characteristic properties of Cr-doped UO 2 , notably, enhanced fission gas retention attributed to enlarged grain sizes following sintering, along with marginal improvements in the thermophysical properties. The findings of recent X-ray Adsorption Near Edge Spectroscopy studies were compared and put into conversation with historic data regarding the incorporation of Cr in UO 2 . On the basis of defect mechanisms, the case is made for the substitutional incorporation of Cr governing the lattice solubility but not the enhanced U diffusivity. Instead, Cr/CR 2 O 3 redox chemistry in a well-defined oxygen potential explains the differences in the U diffusivity and O/M ratio. The primary mechanism of doping enhanced grain growth is found to be liquid assisted sintering due to a CRO (1) eutectic phase at the grain boundaries. The role of inhomogeneities in Cr concentration in UO 2 at various length scales across the materials microstructure is highlighted and connected to promising experimental and modeling work to fill in the gaps in the current understanding of Cr-doped UO 2 . The review considers both the open scientific questions and engineering applications to illustrate the deep connections between the practice and theory in the design of accident tolerant nuclear fuels. In conclusion, the review ends with an outline of future works that combine meticulous irradiation studies and high resolution experiments with next generation modeling and simulations techniques empowered by machine learning advances to accelerate the fabrication and adoption of Cr-doped UO 2 light water reactors.

Cleveland, Mack Wesley [Massachusetts Inst. of Tec↗

DOE OSTI2024

Impurity induced confinement effects in size-separated Mn-doped CsPbCl 3 nanocrystals

Beyond quantum confinement, impurity doping of semiconductor nanocrystals (NCs) offers a degree of control over their optical and electronic properties, which are of interest for potential applications. Manganese (Mn)-doped CsPbCl 3 NCs, for example, show synergistic effects in the visible, with large enhancements in both blue (exciton) and red (dopant) emission over a narrow range of dopant concentration. Although Mn concentration is the primary parameter, NC size offers an additional degree of control over the number of dopants per NC. Size-resolved CsPbCl 3 NCs prepared in the limit of strong Mn doping highlight the emergence of defective NCs with deviations from anticipated confinement trends. In conclusion, the transition correlates with a redshift and increase in the amplitude of dopant emission, and we discuss these observations in the context of atomistic simulations of Ruddlesden-Popper defects in CsPbCl 3 .

36 MATERIALS SCIENCE↗

DOE OSTI2019

Si-doped β -(Al 0.26 Ga 0.74 ) 2 O 3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

We report on n-type degenerate doping in β-(Al 0.26 Ga 0.74 ) 2 O 3 epitaxial thin films grown by metalorganic vapor-phase epitaxy and modulation doping in β-(Al 0.26 Ga 0.74 ) 2 O 3 /β-Ga 2 O 3 heterostructures. Here, the alloy composition is confirmed using high-resolution X-ray diffraction measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room-temperature Hall measurements showed a high carrier concentration of 6 × 10 18 cm –3 to 7.3 × 10 19 cm –3 with a corresponding electron mobility between 53–27 cm 2 V –1 s –1 in uniformly doped β-(Al 0.26 Ga 0.74 ) 2 O 3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3 × 10 12 cm –2 in a β-(Al 0.26 Ga 0.74 ) 2 O 3 /β-Ga 2 O 3 heterostructure using a uniformly doped β-(Al 0.26 Ga 0.74 ) 2 O 3 barrier layer and a thin spacer layer.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Band Energy Dependence of Defect Formation in the Topological Semimetal Cd3As2

Cadmium Arsenide (Cd3As2) is a prototypical Dirac semimetal that manifests topological properties in a 3D bulk material. In defect-free Cd3As2, the Fermi level lies at a minimum in the density of states at the Dirac point, but experimentally it forms with excess electron carriers and an elevated EF, thereby masking the topological features. To computationally study the self-doping of Cd3As2, we combine density functional theory (DFT) calculations for defect formation energies with quasi-particle self-consistent GW (QSGW) electronic structure calculations. We demonstrate an innate dependence of the point defect formation energies on carrier concentrations and use the QSGW calculated density of states to extrapolate formation energies to arbitrary electron concentrations. This approach allows the quantitative modeling of thermodynamic defect equilibria in topological semimetals and is used to predict how Cd3As2 growth conditions affect the position of EF relative to the Dirac point.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS↗

DOE OSTI2021

Implications of doping on microstructure, processing, and thermoelectric performance: The case of PbSe

Abstract In this work, we highlight the often-overlooked effects of doping on the microstructure and performance of bulk thermoelectric materials to offer a broader perspective on how dopants interact with their parent material. Using PbSe doped with Na, Ag, and K as a model material system, we combine original computational, experimental, and microscopy data with established trends in material behavior, to provide an in-depth discussion of the relationship between dopants, processing, and microstructure, and their effects on thermoelectric efficiency and thermal stability. Notable observations include differences in the microstructure and mass loss of thermally treated samples of Na- and Ag-doped PbSe, as well as findings that Na and K cations exist predominantly as substitutional point defects while Ag also occupies interstitial sites and exhibits lower solubility. We discuss how these differences in point defect populations are known to affect a dopants’ ability to alter carrier concentration and how they may affect the mechanical properties of PbSe during processing. Graphic Abstract

Grovogui, Jann A. (ORCID:0000000200481049)↗

DOE OSTI2020

Quantitative nanoscale tracking of oxygen vacancy diffusion inside single ceria grains by in situ transmission electron microscopy

Oxygen vacancy formation and migration in ceria is critical to its electrochemical and catalytic properties in systems for chemical and energy transformation, but its quantification is rather challenging especially at atomic-scale because of disordered distribution. Here we report a rational approach to track oxygen vacancy diffusion in single grains of pure and Sm-doped ceria at -20 °C to 160 °C using in situ (scanning) transmission electron microscopy ((S)TEM). To create a gradient in oxygen vacancy concentration, a small region (~30 nm in diameter) inside a ceria grain is reduced to the C-type CeO 1.68 phase by the ionization or radiolysis effect of a high-energy electron beam. The evolution in oxygen vacancy concentration is then mapped through lattice expansion measurement using scanning nano-beam diffraction or 4D STEM at a spatial resolution better than 2 nm; this allows direct determination of local oxygen vacancy diffusion coefficients in a very small domain inside pure and Sm-doped ceria at different temperatures. Further, the activation energies for oxygen transport are determined to be 0.59, 0.66, 1.12, and 1.27 eV for pure CeO 2 , Ce 0.94 Sm 0.06 O 1.97 , Ce 0.89 Sm 0.11 O 1.945 , and Ce 0.8 Sm 0.2 O 1.9 , respectively, implying that activation energy increases due to impurity scattering. The results are qualitatively supported by density functional theory (DFT) calculations. In addition, our in situ TEM investigation reveals that dislocations impede oxygen vacancy diffusion by absorbing oxygen vacancies from the surrounding areas and pinning them locally. With more oxygen vacancies absorbed, dislocations show extended strain fields with local tensile zone sandwiched between the compressed ones. Therefore, dislocation density should be reduced in order to minimize the resistance to oxygen vacancy diffusion at low temperatures.

36 MATERIALS SCIENCE↗

DOE OSTI2023

SIMS CHARACTERIZATION OF NITROGEN DOPING OF LCLS-II-HE PRODUCTION CAVITIES

The thermal diffusion of nitrogen into the surface of niobium has been shown to yield superior low-loss SRF performance. An effective solution was identified and promptly employed in the production of cryomodules for LCLS-II. With added experience and R&D, a modified process was chosen for use in the upgrade for LCLS-II-HE. Largely motivated by this circumstance, supporting research has significantly refined the technique for making calibrated secondary ion mass spectrometry (SIMS) measurements of the N concentration depth profiles produced by production processes. Standardized reference samples were included with four HE production cavities in their N-doping furnace runs. We report the calibrated dynamic SIMS depth profiles of N, C, and O for these samples, together with the cryogenic acceptance test performance of the associated cavities. Interpretation and comparison with similar samples acquired in other furnaces highlights the importance of intentional process quality control of furnace conditions.

Reece, Charles↗

DOE OSTI2023

SIMS CHARACTERIZATION OF NITROGEN DOPING OF LCLS-II-HE PRODUCTION CAVITIES

Reece, Charles↗

DOE OSTI2019

Crystal Chemistry, Band-Gap Red Shift, and Electrocatalytic Activity of Iron-Doped Gallium Oxide Ceramics

This work for the first time unfurls the fundamental mechanisms and set the stage for an approach to derive electrocatalytic activity, which is otherwise not possible, in a traditionally known wide band gap oxide material. Specifically, we report on the tunable optical properties, in terms of wide spectral selectivity and red-shifted band gap, and electrocatalytic behavior of iron (Fe) doped gallium oxide (ß-Ga 2 O 3 ) model system. X-ray diffraction (XRD) studies of sintered Ga 2-x Fe x O 3 (GFO) (0.0 ≤ x ≤ 0.3) compounds provide evidence for the Fe 3+ substitution at Ga 3+ site without any secondary phase formation. Rietveld refinement of XRD patterns reveal that the GFO compounds crystallize in monoclinic crystal symmetry with C2/m space group. The electronic structure of the GFO compounds probed using X-ray photoelectron spectroscopy data reveals that, at lower concentrations of Fe exhibits mixed chemical valence states (Fe 3+ , Fe 2+ ), whereas single chemical valence state (Fe 3+ ) is evident for higher Fe content (x = 0.20-0.30). The optical absorption spectra reveal a significant red shift in the optical band gap with Fe doping. The origin of the significant red shift even at low concentrations of Fe (x = 0.05) is attributed to the strong sp-d exchange interaction originated from the 3 d 5 electrons of Fe 3+ . The optical absorption edge observed at ˜450 nm with lower intensity is the characteristic of Fe doped compounds associated with Fe 3+ - Fe 3+ double excitation process. Coupled with optical band gap red shift, electrocatalytic studies of GFO compounds reveals that, interestingly, Fe doped Ga 2 O 3 compound exhibits electrocatalytic activity in contrast to intrinsic Ga 2 O 3 . Fe doped samples (GFO) demonstrated appreciable electrocatalytic activity towards the generation of H 2 through electrocatalytic water splitting. An onset potential and tafel slope of GFO compounds includes: ~900 mV, ~210 mVdec -1 (x = 0.15) and ~1036 mV, ~290 mVdec-1 (x = 0.30). The electrocatalytic activity of Fe doped Ga-oxide compounds is attributed to cumulative effect of different mechanisms such as; doping resulted new catalytic centers, enhanced conductivity and electron mobility. Hence, in this report, for the first time, we explored a new pathway; electrocatalytic behavior of Fe doped Ga 2 O 3 resulted due to Fe chemical states, red shift in optical band gap. The implications derived from this work may be applicable to a large class of compounds and further options may be available to design functional materials for electrocatalytic energy production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Dynamical correlations leading to site and orbital selective Mott insulator transition in hydrogen doped SmNiO 3

Electron doping induces metal -to -insulator transition (MIT) in SmNiO 3 as realized by experiments. While earlier density functional theory (DFT) studies with static correlations fell short of explaining the recent MIT observations at lower hydrogen concentrations, we present a comprehensive computational investigation employing an advanced approach. We combine DFT with dynamical mean field theory (DFT + DMFT) to efficiently analyze the insulating behavior of hydrogen -doped SmNiO 3 . In contrast to previous theoretical works, our calculations predict an insulator transition occurring at a reduced doping level of H:Ni = 0.5:1. Specifically, while the DFT + U method reveals a gap opening between p-to-d orbitals, the DMFT approach highlights a gap opening between d-to-d orbitals. Our findings uncover a selective Mott transition in site and orbital characteristics, with the Ni ions proximate to the doped hydrogen exhibiting Mott -like traits. Notably, DMFT calculations highlight a pronounced dependence on Hund's parameter J, implying the presence of Hundness in the Mott insulator. Finally, this study underscores the necessity of accounting for dynamical correlations to accurately describe the electronic structure of strongly correlated electron-doped rare-earth nickelates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗