SEARCH · Search NASA

Results for “electronic components”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 361 records · Page 20

All sources NASA NTRS DOE OSTI

NASA NTRS2009

Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗

NASA NTRS1980

Safe Handling Practices

In 1977 Compugraphic Corporation was experiencing an unacceptable failure rate on microelectronic chips. Company engineers suspected that static electricity was causing the trouble because some electronic components are highly susceptible to damage by electrostatic charge. From a NASA Tech Brief, they learned that Rockwell International had prepared a report on safe handling practices for electronic components. NASA provided a Technical Support Package detailing 50 safe handling procedures affecting workers, work areas, equipment and packaging materials. Where poor practices were discovered, re-education of employees and other corrective measures were undertaken.

Source record↗

NASA NTRS2009

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

Courey, Karim J.↗

NASA NTRS2011

High Voltage EEE Parts for EMA/EHA Applications on Manned Launch Vehicles

The objective of this paper is an assessment of high voltage electronic components required for high horsepower electric thrust vector control (TVC) systems for human spaceflight launch critical application. The scope consists of creating of a database of available Grade 1 electrical, electronic and electromechanical (EEE) parts suited to this application, a qualification path for potential non-Grade 1 EEE parts that could be used in these designs, and pathfinder testing to validate aspects of the proposed qualification plan. Advances in the state of the art in high power electric power systems enable high horsepower electric actuators, such as the electromechnical actuator (EMA) and the electro-hydrostatic actuator (EHA), to be used in launch vehicle TVC systems, dramaticly reducing weight, complexity and operating costs. Designs typically use high voltage insulated gate bipolar transistors (HV-IGBT). However, no Grade 1 HV-IGBT exists and it is unlikely that market factors alone will produce such high quality parts. Furthermore, the perception of risk, the lack of qualification methodoloy, the absence of manned space flight heritage and other barriers impede the adoption of commercial grade parts onto the critical path. The method of approach is to identify high voltage electronic component types and key parameters for parts currently used in high horsepower EMA/EHA applications, to search for higher quality substitutes and custom manufacturers, to create a database for these parts, and then to explore ways to qualify these parts for use in human spaceflight launch critical application, including grossly derating and possibly treating hybrid parts as modules. This effort is ongoing, but results thus far include identification of over 60 HV-IGBT from four manufacturers, including some with a high reliability process flow. Voltage ranges for HV-IGBT have been identified, as has screening tests used to characterize HV-IGBT. BSI BS ISO 21350 Space systems Off-the-shelf item utilization, developed from Marshall Work Instruction MWI8060.1 OFF-THE-SHELF HARDWARE UTILIZATION IN FLIGHT HARDWARE DEVELOPMENTwas found to provide guidance for including commercial off-the-shelf (COTS) hardware for use in critical applications.

Griffin, Trent↗

NASA NTRS2000

CLUST - EVAP Monte Carlo Simulation Applications for Determining Effective Energy Deposition in Silicon by High Energy Protons

The CLUST-EVAP is a Monte Carlo simulation of the interaction of high energy (25 - 400 MeV) protons with silicon nuclei. The initial nuclear cascade stage is modeled using the CLUST model developed by Indiana University over 30 years ago. The second stage, in which the excited nucleus evaporates particles in random directions, is modeled according to the evaporation algorithm provided by H. H. K. Tang of IBM. Using the CLUST-EVAP code to model fragment produ6tion and the Vavilov-Landau theory to model fluctuations in direct ionization in thin silicon layers, we have predicted energy deposition in silicon components for various geometrical configurations. We have compared actual measurements with model predictions for geometry's such as single, thin silicon particle detectors, telescopic particle detectors flown in space to measure the environment, and thin sensitive volumes of modern micro-electronic components. We have recently compared the model predictions with actual measurements made by the DOSTEL spectrometer flown in the Shuttle payload bay on STS-84. The model faithfully reproduces the features and aids in interpretation of flight results of this instrument. We have also applied the CLUST-EVAP model to determine energy deposition in the thin sensitive volumes of modern micro-electronic components. We have accessed the ability of high energy (200 MeV) protons to induce latch-up in certain devices that are known to latch up in heavy ion environments. However, some devices are not nearly as susceptible to proton induced latch-up as expected according to their measured heavy ion latch-up cross sections. The discrepancy is believed to be caused by the limited range of the proton-silicon interaction fragments. The CLUST-EV AP model was used to determine a distribution of these fragments and their range and this is compared to knowledge of the ranges required based on the known device structure. This information is especially useful in accessing the risk to on-orbit perfonnance in a heavy ion environment based on testing performed with only protons.

ONeill, Pat M.↗

NASA NTRS1999

Start Up Application Concerns with Field Programmable Gate Arrays (FPGAs)

This note is being published to improve the visibility of this subject, as we continue to see problems surface in designs, as well as to add additional information to the previously published note for design engineers. The original application note focused on designing systems with no single point failures using Actel Field Programmable Gate Arrays (FPGAs) for critical applications. Included in that note were the basic principles of operation of the Actel FPGA and a discussion of potential single-point failures. The note also discussed the issue of startup transients for that class of device. It is unfortunate that we continue to see some design problems using these devices. This note will focus on the startup properties of certain electronic components, in general, and current Actel FPGAs, in particular. Devices that are "power-on friendly" are currently being developed by Actel, as a variant of the new SX series of FPGAs. In the ideal world, electronic components would behave much differently than they do in the real world, The chain, of course, starts with the power supply. Ideally, the voltage will immediately rise to a stable V(sub cc) level, of course, it does not. Aside from practical design considerations, inrush current limits of certain capacitors must be observed and the power supply's output may be intentionally slew rate limited to prevent a large current spike on the system power bus. In any event, power supply rise time may range from less than I msec to 100 msec or more.

Katz, Richard B.↗

NASA NTRS2014

Investigation of HZETRN 2010 as a Tool for Single Event Effect Qualification of Avionics Systems

NASA's future missions are focused on deep space for human exploration that do not provide a simple emergency return to Earth. In addition, the deep space environment contains a constant background Galactic Cosmic Ray (GCR) radiation exposure, as well as periodic Solar Particle Events (SPEs) that can produce intense amounts of radiation in a short amount of time. Given these conditions, it is important that the avionics systems for deep space human missions are not susceptible to Single Event Effects (SEE) that can occur from radiation interactions with electronic components. The typical process to minimizing SEE effects is through using heritage hardware and extensive testing programs that are very costly. Previous work by Koontz, et al. [1] utilized an analysis-based method for investigating electronic component susceptibility. In their paper, FLUKA, a Monte Carlo transport code, was used to calculate SEE and single event upset (SEU) rates. This code was then validated against in-flight data. In addition, CREME-96, a deterministic code, was also compared with FLUKA and in-flight data. However, FLUKA has a long run-time (on the order of days), and CREME-96 has not been updated in several years. This paper will investigate the use of HZETRN 2010, a deterministic transport code developed at NASA Langley Research Center, as another tool that can be used to analyze SEE and SEU rates. The benefits to using HZETRN over FLUKA and CREME-96 are that it has a very fast run time (on the order of minutes) and has been shown to be of similar accuracy as other deterministic and Monte Carlo codes when considering dose [2, 3, 4]. The 2010 version of HZETRN has updated its treatment of secondary neutrons and thus has improved its accuracy over previous versions. In this paper, the Linear Energy Transfer (LET) spectra are of interest rather than the total ionizing dose. Therefore, the LET spectra output from HZETRN 2010 will be compared with the FLUKA and in-flight data to validate HZETRN 2010 as a computational tool for SEE qualification by analysis. Furthermore, extrapolation of these data to interplanetary environments at 1 AU will be investigated to determine whether HZETRN 2010 can be used successfully and confidently for deep space mission analyses.

Rojdev, Kristina↗

NASA NTRS2012

High Energy/LET Radiation EEE Parts Certification Handbook

Certifying electronic components is a very involved process. It includes pre-coordination with the radiation test facility for time, schedule and cost, as well as intimate work with designers to develop test procedures and hardware. It also involves work with radiation engineers to understand the effects of the radiation field on the test article/setup as well as the analysis and production of a test report. The technical content of traditional ionizing radiation testing protocol is in wide use and generally follows established standards (ref. Appendix C). This document is not intended to cover all these areas but to cover the methodology of using Variable Depth Bragg Peak (VDBP) to accomplish the goal of characterizing an electronic component. The Variable Depth Bragg Peak (VDBP) test method is primarily used for deep space applications of electronics. However, it can be used on any part for any radiation environment, especially those parts where the sensitive volume cannot be reached by the radiation beam. An example of this problem would be issues that arise in de-lidding of parts or in parts with flip-chip designs, etc. The VDBP method is ideally suited to test modern avionics designs which increasingly incorporate commercial off-the-shelf (COTS) parts and units. Johnson Space Center (JSC) developed software provides assistance to users in developing the radiation characterization data from the raw test data.

Reddell, Brandon↗

NASA NTRS1986

Electrostatic beam instabilities in a positive/negative ion plasma

This paper examines the linear theory of electrostatic waves and instabilities in an unmagnetized, homogeneous Vlasov plasma. The first configuration considered is that of a stable plasma with three Maxwellian components: electrons, positive ions, and negative ions. The dispersion properties of the lightly damped ion modes are studied as a function of relative electron density and relative component temperatures. The second configuration considered is that of a tenuous electron-ion beam with drift speed streaming through a negative/positive ion plasma. If the beam is very tenuous, an electron beam instability is excited; if the beam is more dense, the instability becomes Buneman-like with parabolic dispersion. The thresholds and maximum growth rates of these instabilities are described as functions of the beam density and drift speed.

Galvez, Miguel↗

DOE OSTI2024

High performance Calcium Copper Titanate/Polyimide dielectrics composites enabled through colloidal stabilization

Transition to electrified transportation demands advanced power electronic components with the capability to improve range, reliability, and cost of ownership to accelerate mass market adoption. Thus, improvement in the current designs, manufacturing processes, materials, and components capable of providing reliable and efficient operation at higher temperatures play important roles in meeting future needs. To address these challenges, this article focuses on novel dielectric materials designed to reduce the volume of the most important and bulky component of a power electronic system, a capacitor. A new composite dielectric material was developed by integrating the positive attributes of both polymer and ceramic capacitors to overcome the challenges of state-of-the-art dielectric materials. Further, the developed composite properties have been evaluated and showed promising results, achieving a dielectric constant of 250 at 100 Hz, 25°C, unseen in current literature. Additionally, these materials can function at high temperatures (>150°C) with good breakdown strength, providing promising working conditions for capacitors, especially in electric vehicle applications.

36 MATERIALS SCIENCE↗

NASA NTRS1967

Examination of Rover-Type Fuel Element Components by Electron Microscopy

No abstract available

Gregory, T. G.↗

NASA NTRS1976

Long-life mission reliability for outer planet atmospheric entry probes

The results of a literature analysis on the effects of prolonged exposure to deep space environment on the properties of outer planet atmospheric entry probe components are presented. Materials considered included elastomers and plastics, pyrotechnic devices, thermal control components, metal springs and electronic components. The rates of degradation of each component were determined and extrapolation techniques were used to predict the effects of exposure for up to eight years to deep space. Pyrotechnic devices were aged under accelerated conditions to an equivalent of eight years in space and functionally tested. Results of the literature analysis of the selected components and testing of the devices indicated that no severe degradation should be expected during an eight year space mission.

Mccall, M. T.↗

NASA NTRS1985

Two types of electron events in solar flares

The fluxes and spectra of the flare electrons measured on board Venera-I3 and I4 space probes are compared with the parameters of the hard (E sub x approximately 55 keV) and thermal X-ray bursts. The electron flux amplitude has been found to correlate with flare importance in the thermal X-ray range (r approximately 0.8). The following two types of flare events have been found in the electron component of SCR. The electron flux increase is accompanied by a hard X-ray burst and the electron spectrum index in the approximately 25 to 200 keV energy range is gamma approximately 2 to 3. The electron flux increase is not accompanied by a hard X-ray burst and the electron spectrum is softer (Delta gamma approximately 0.7 to 1.0).

Daibog, E. I.↗

NASA NTRS2001

Miniature Free-Flying Magnetometer Utilizing System-On-A-Chip Technology

Four Free-Flying Magnetometers (FFMs), developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy mission, were successfully deployed from the payload of a sounding rocket launched from Poker Flats, Alaska on February 11, 1999. The FFMs functioned successfully by synchronously measuring the vector magnetic field at 4 points separate from the payload and at relative distances up to 3 km, and communicated their data, in bursts, to the ground. This is the first time synchronized in-situ multipoint measurements of the Earth's magnetic field utilizing miniature spin-stabilized "sensorcraft" have been performed. The data they provided have enabled, for the first time, the direct measure of field-aligned current density and are enabling new science by determining the fine-scale structure of the currents in the Earth's ionosphere involved in the production of aurora. These proof-of-concept "hockey puck" (80 mm diameter, 38 mm height, 250 gram mass) FFMs were built using off-the-shelf commercial, industrial, and military grade surface-mount electronic components. Radiation-hard electronics was not required for the Enstrophy mission's short sub-orbital flight. The successful design, implementation, and flight demonstration of this 1st generation FFM design has provided a solid base for further development of a 2nd generation FFM design for planetary science applications. A reliable ultra-miniature radiation-hard 2nd-generation FFM utilizing System-On-A-Chip (SOAC) technologies is proposed. This design would be targeted for long-term planetary missions to investigate magnetospheric field configurations in regions having small-scale structure and to separate spatial and temporal variations. A fleet of short-lived (expendable) FFMs would be deployed into a targeted region to gather multiprobe vector magnetic field data. The FFMs would be ejected from a parent spacecraft at a speed of a few m/sec and would cover spatial volumes of order tens of kilometers for times of order one hour. The parent spacecraft would carry a sufficient number of FFMs for multiple deployments. Additional information is contained in the original extended abstract.

Eyre, F. B.↗

NASA NTRS2016

Terrestrial Sources of X-Ray Radiation and Their Effects on NASA Flight Hardware

X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.

X-ray↗

NASA NTRS2018

Printed Circuit Board Inspection and Quality Control - PCB Failure Causes and Cures

This two day workshop will discuss a range of topics, including root cause analysis, physics-of-failure principles and failure mechanisms in printed circuit boards. Printed circuit boards (PCBs) are the baseline for electronics manufacturing upon which electronic components are mounted and formed into electronic systems. PCBs are used in a variety of electronic circuits from simple one-transistor amplifiers to large super computers. A PCB serves three main functions: 1) it provides the necessary mechanical support for the components in the circuit 2) it provides the necessary electrical interconnections, and 3) it bears some form of legend which identifies the components it carries. The failure modes on the PCBs can be categorized in a hierarchical structure, in which the mechanisms and causes are site or location dependant. Specimen preparation techniques, non-destructive and destructive analysis, and materials characterization will also be discussed. The first day of the workshop will present methodologies for identifying potential failure mechanisms in electronics based on the failure history and, systematic approaches to root cause analysis. The second day will cover failure analysis techniques geared towards various failure mechanisms, along with numerous component and PCB assembly failure analysis case studies that illustrate the techniques and analysis. Failure analysis case studies will be used to illustrate the techniques and analysis principles to arrive at the root cause(s) of field failures on printed circuit boards, active components, and assemblies.

Printed circuit boards↗

NASA NTRS1966

Component modeling handbook

Handbook on nonlinear mathematical models for electronic components

ELECTRONIC EQUIPMENT↗

NASA NTRS1966

Tool forms right angles in component leads

Hand tool forms right angles in electronic component leads so they fit the spaced holes of a printed circuit board. This tool firmly holds the leads at points near the component ends to prevent damage and provide accuracy.

Glenn, C. G.↗