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DOE OSTI2025

Temperature-Agnostic Pt/Au Ohmic Contacts on n -Type Gallium Nitride for Self-Aligned MOSFETs

Five alternative metals are investigated as ohmic contacts to n-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on n-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for p-dopant activation. Here, in the present work, an n-GaN bilayer, consisting of a thin heavily doped contact layer (n 0 = 1 × 10 20 cm −3 ) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on n-GaN. Pt/Au metallization is demonstrated as an ohmic contact to n-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the n-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.

Reilly, Kevin James [Sandia National Laboratories ↗

DOE OSTI2020

Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition

Molecular layer deposition (MLD) is able to produce ultrathin polymer films with control over thickness, cross-linking, and chemical composition. With these capabilities, MLD should be useful in the fabrication of novel polymer membranes on porous supports. However, confining a continuous MLD film to the surface of porous substrates is difficult because of MLD film growth in the pores. The deposition in the pores lowers the conductance of the porous support. This paper presents a method to deposit continuous polymer films on top of porous substrates. In this method, Al2O3 plasma-enhanced atomic layer deposition (PE-ALD) using trimethylaluminum and oxygen plasma as the reactants was first used to cap the pores of the substrate. Subsequently, a polyamide MLD film was deposited on the Al2O3 PE-ALD capping layer using m-phenylenediamine and trimesoyl chloride as the reactants. The Al2O3 pore caps were then removed from the porous substrate by etching from the backside using a timed exposure to a dilute sodium hydroxide solution. This method was demonstrated using anodic aluminum oxide (AAO) and polyethersulfone (PES) porous substrates. Al2O3 PE-ALD film growth was limited to the top of the porous substrate, resulting in rapid surface recombination or high sticking coefficients for the reactive plasma species within the pores. Gas permeance measurements confirmed the pore capping of the AAO substrates. The reopening of the pores by dissolving the Al2O3 pore caps with a sodium hydroxide solution was monitored using gas permeance versus etch time. The removal of the Al2O3 pore caps from the PES substrates could also dissolve the Al2O3 layer underneath the MLD film. The loss of this Al2O3 layer led to the detachment of the MLD film from the PES substrate. However, the MLD film could be anchored to the PES support at fractures located in the Al2O3 film prior to the MLD. The Al2O3 film fracture allowed the MLD film to anchor firmly to the PES substrate by MLD in the pores of the PES porous substrate. The distance between the anchor points was a function of fracture density. This distance could be controlled by applying a tensile stress to the Al2O3 PE-ALD film to fracture the film through sample bending. This method produced firmly anchored polymer MLD films on top of the PES porous substrates.

Welch, Brian C. (ORCID:000000029747045X)↗

DOE OSTI2025

Time-resolved atomic-resolution Brownian tomography of single nanocrystals reveals size-dependent dynamics

Atomic-resolution structure identification of nanocrystals by graphene liquid cell electron microscopy (GLC-EM) has revealed that small, solubilized platinum nanocrystals consist of an ordered crystalline core surrounded by mobile surface atoms, which dissociate during oxidative etching, resulting in distinct temporal structural states. Requirements imposed by the 3D reconstruction algorithm limit the number of structural states that can be resolved. We introduce a regularized 3D reconstruction algorithm that exploits the redundancy inherent in the experimental data, allowing us to improve the time resolution. Our developments provide a comprehensive molecular picture at unprecedented spatial and temporal resolution of the nonlinear, linear, and fluctuating dynamic phenomena that single nanocrystals undergo during the GLC-EM experiment. We determined atomic structures of 66 temporal structural states, extracted from 15 time trajectories of individual nanocrystals. Large (478 to 698 atoms) and small (<300 atoms) nanocrystals show etching that preserves a stable core, whereas mid-sized (351 to 571 atoms) nanocrystals present dynamics that change the coordination of the core.

Meana-Pañeda, Rubén↗

DOE OSTI2021

Highly efficient ultra-low blaze angle multilayer grating

We have developed an advanced process for blaze angle reduction of x-ray gratings for the soft, tender, and EUV spectral ranges. The process is based on planarization of an anisotropically etched Si blazed grating followed by a chemically selective plasma etch. This provides a way to adjust the blaze angle to any lower value with high accuracy. Here we demonstrate the reduction of the blaze angle to an extremely low value of 0.04°±0.004°. For a 100 lines/mm grating with a Mo/Si multilayer coating, the grating exhibits diffraction efficiency of 58% in the 1 st diffraction order at a wavelength of 13.3 nm. This technique will be applicable to a wide range of uses of high efficiency gratings for synchrotron sources, as well as for Free Electron Lasers (FEL).

42 ENGINEERING↗

DOE OSTI2022

6000 lines/mm blazed grating for a high-resolution x-ray spectrometer

We have designed and fabricated a high groove density blazed grating for a Resonant Inelastic X-ray Scattering spectrometer for the new Qerlin beamline at the Advanced Light Source (ALS) synchrotron facility. The gratings were fabricated using a set of nanofabrication techniques including e-beam lithography, nanoimprint, plasma etch, and anisotropic wet etching. Two gratings with groove density of 6000 lines/mm and 3000 lines/mm and optimized for operation in the 1st and 2nd negative diffraction order respectively were fabricated and tested. We report on fabrication details and characterization of the gratings at beamline 6.3.2 of the ALS.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Nucleation, growth, and superlattice formation of nanocrystals observed in liquid cell transmission electron microscopy

This work reviews the advancements and prospects of liquid cell transmission electron microscopy (TEM) imaging and analysis methods in understanding the nucleation, growth, etching, and assembly dynamics of nanocrystals. The bonding of atoms into nanoscale crystallites produces materials with nonadditive properties unique to their size and geometry. The recent application of in situ liquid cell TEM to nanocrystal development has initiated a paradigm shift, (1) from trial-and-error synthesis to a mechanistic understanding of the “synthetic reactions” responsible for the emergence of crystallites from a disordered soup of reactive species (e.g., ions, atoms, molecules) and shape-defined growth or etching; and (2) from post-processing characterization of the nanocrystals’ superlattice assemblies to in situ imaging and mapping of the fundamental interactions and energy landscape governing their collective phase behaviors. Imaging nanocrystal formation and assembly processes on the single-particle level in solution immediately impacts many existing fields, including materials science, nanochemistry, colloidal science, biology, environmental science, electrochemistry, mineralization, soft condensed-matter physics, and device fabrication.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Curing inhibition and shelf stability in silicone formulations for direct ink writing

Various potential hydrosilylation inhibitors were incorporated into a silicone formulation for 3D printing. Different inhibitors resulted in peak cure temperatures from 42.8 to 180.3°C. The curing behavior of formulations with 1-ethynyl-1-cyclohexanol (ETCH), which exhibited a peak cure temperature of 98.4°C, was characterized for different ETCH concentrations and storage conditions. The curing was modeled using time temperature superposition, revealing an activation barrier of 89 kJ/mol. Overall, characterization resulted in a conservative recommended shelf life of 90 days. In conclusion, these studies offer insights into the stability of these formulations and the importance of inhibition for producing reliable, printable inks.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Rapid Patterning and Advanced Device Structures for Low Cost Manufacturable Crystalline Si IBC Cells

Recent record efficiency Si cells have had an interdigitated back contact (IBC) design where both positive and negative contacts are fabricated on the back side of the Si wafer. Many industry groups have investigated IBC cells but used photolithography to pattern the rear contacts although it is considered impractical for low cost, high volume manufacturing. Alternative patterning methods using lasers and mechanical masking have been utilized in fabrication of patterned regions in IBC Si solar cells to replace photolithography. Another exciting advance in Si solar cell technology has been replacing the high temperature diffusion of doped regions inside the crystalline Si wafer with low temperature deposition of very thin layers of doped amorphous hydrogenated Si (a-Si:H) on the Si wafer. This is called a Si heterojunction (HJ) device. The a-Si:H provides excellent passivation of surface defects and has produced the highest open circuit voltages (VOC) of any Si solar cell device structure. The Institute of Energy Conversion (IEC) demonstrated the first IBC-HJ solar cell combining these two strategies in 2007 and has fabricated IBC-HJ cells with 20% efficiency using three photolithography steps. Despite the demonstrated efficiency potential of this device by industry groups (>26%) there is no commercial production because of the challenges of patterning and processing the structure in an industrial environment. Our work sought to address that challenge. The objective of this 3 year project was to develop the processing for the IBC-HJ Si solar cell using lasers for patterning and contact formation instead of photolithography. Laser patterning enables rapid, contactless manufacturing of patterned regions. We intensively studied laser fired contacts, laser patterning of the a-Si multi-layer stacks and metal layers and the use of plasma shadow masks. After an exhaustive focus in the first year on the laser fired emitter (LFE) and contact (LFC), we were unable to achieve VOC greater than 660 mV, compared to the 720 mV required to meet our milestones. We discovered that an additional issue with our original IBC structure was the presence of an inversion layer at the back surface connecting the p and n regions which reduced the VOC and fill factor (FF). We developed innovative methods for characterizing the inversion layer. These two limitations in the original design lead to development of a new IBC-HJ process sequence and device structure which we called Plasma Masked Laser Processed (PMLP). It retained the original high efficiency features including manufacturability. The LFC was replaced with a standard n-type a-Si HJ contact. The inversion layer was eliminated by replacing the previous p-type stack in the gap with an n-type or SiN stack. The PMLP used laser ablation of a multi-layer a-Si stack followed by chemical etching to open the n-contact. It required deposition of a patterned stack through a mask in the plasma deposition chamber. This turned out to be a source of significant problems due to inevitable unwanted deposition ‘leakage’ under the mask. This formed a blocking contact on the emitter which significantly reduced Voc and FF. Several iterations in PMLP device structure and chemical etching steps resulted in a large improvements, e.g. the efficiency increasing from 3 to 15% and Voc from 450 to 660 mV but they were unable to completely eliminate it. The best IBC-HJ device we fabricated had only 15% efficiency. For perspective, our standard FHJ devices had 20% efficiency.

14 SOLAR ENERGY↗

DOE OSTI2021

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗

DOE OSTI2022

Technical Use Guidance for Engraving with a FiberMark Epilog Laser Engraver

The FiberMark Epilog Laser Engraver is useful tool having the ability to etch and mark a wide variety of metals and plastics. This laser engraver is capable of creating different marks including annealing metal, etching metal, metal polishing, and plastic marking. Annealing metal is a process in which the metal is heated to a high temperature creating a permanent oxide layer on the surface resulting in a high contrast mark. The benefit of annealing is this type of mark is created without changing the surface finish of the metal. Annealing is the best choice for marking targets used in the Pu238 program due to the high contrast mark it is easily visible throughout the production process. Metal engraving is a process in which the metal is removed from the surface by vaporization. To make a deep metal engraving multiple passes may be required particularly if the metal has a high hardness level (such as stainless steel). Metal polishing is a process in which the surface of the metal is heated quickly causing the color to change and take on a mirror-like finish. This process is best for metals that are darker or have a matte finish. Plastic marking occurs with engineered plastics which undergo a color change in the surface without the surface being damaged. The plastics that are most compatible with the laser engraver’s 1065 nm wavelength of light are PET, ABS, polycarbonate and colored Delrin.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Specifications of Legacy U(Pu)Zr Metallography Data

The DOE Nuclear Energy Advanced Reactor Technologies (ART) Program has supported the creation of several databases with information describing the safety performance of fast reactors, components, and fuels. This growing collection of legacy experimental data, operating data, and analysis is available online to registered users. Metallography data is one of the most important types of PIE data being collected, organized and stored in several ART Fast Reactor Databases (https://frdb.ne.anl.gov), including the Fuels Irradiation & Physics Database (FIPD), Out-of-Pile Transient Database (OPTD), and TREAT (the Transient Reactor Test Facility) Experimental Relational Database (TREXR). These databases contain three main sets of metallography data. The first set is the metallography data from Experimental Breeder Reactor-II (EBR-II) and Fast Flux Test Facility (FFTF) irradiated fuel pins measured in the Hot Fuel Examination Facility (HFEF); the second set is the metallography data from EBR-II irradiated fuel pins measured in the Alpha-Gamma Hot Cell Facility (AGHCF); the third set is the metallography data from transient tested fuel pins (the transients tests include the out-of-pile tests and TREAT tests) measured in AGHCF. Since both the second and third sets of data were measured in AGHCF, they are governed by the same specification. The metallography data in the databases are digital images scanned from either positive or negative photos. The quality of the images, including their resolution and contrast, relies on the preserved quality of the pictures and the scanning conditions. To analyze the microstructure of a fuel pin, a series of preparatory steps must be undertaken. These include sectioning, epoxy mounting, mechanical grinding and polishing, and often etching. The resulting samples were then transferred to a secondary hot cell, or glovebox (depending the strength of radiation field) for microscopy examination. The specifications provided herein focus on the metallography examinations. The sample grinding, polishing and etching processes are also discussed. The procedures involving sectioning and epoxy mounting are out of the scope of the current specification; details can be found in the corresponding operation manuals. If more data are collected and added to the ART Fast Reactor Databases, this specification will be updated to accommodate the additional data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2025

Laser Ablation for Low-Cost Multijunction III-V Solar Cell Mesa Isolations

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation, when processing multijunction cells. We demonstrate that upright multijunction solar cells isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline cell processed with photolithography. By contrast, cells isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with post-processing etches. This demonstration of photolithography-free mesa isolation with no performance losses is promising for less expensive III-V manufacturing.

14 SOLAR ENERGY↗

DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗

DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Garattoni, S. [Fermilab]↗

DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

DOE OSTI2020

Method of forming inorganic nanocages

Nanocages are formed by etching nancubes. The nanocubes are added to an aqueous system having an amphiphilic lipid dissolved in an organic solvent (e.g. a hydrophobic alcohol) to form reverse micelles. As the water evaporates the micelles shrink as etching of the flat surface of the nanocubes occurs. In this fashion hollow nanocages are produced. In one embodiment, the nanocage is covalently attached to a polymer shell (e.g. a dextran shell).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2021

Planarization of optical substrates

A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

Stolz, Christopher J.↗

DOE OSTI2022

Efficient black silicon photovoltaic devices with enhanced blue response

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.

Oh, Jihun↗