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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
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NASA NTRS1986

Getaway Tether Experiment (GATE): A free flying tether experiment

Orbital reboost and power generation using electrodynamic tethers has been suggested as a means of increasing the operational flexibility and orbital lifetime of satellites. Excess energy generated by solar arrays can be stored as orbital energy and later extracted form the orbit during peak power demands. The Getaway Tether Experiment (GATE) will demonstrate this practical tether application and will measure the dynamic circuit impedance. The micrometeoroid hazard to tension members will be studied as will radio frequency propagation. The radar cross section of long wires will be calculated considering the effects of resistance.

Greene, M.↗
NASA NTRS1986

A fluorescent gated proportional counter for X-ray astronomy

The development of a position-sensitive proportional counter having a large drift volume is reported. It incorporates a fluorescent gating technique which results in a large improvement in background rejection over conventional proportional counters, and in addition offers the benefit of enhanced energy resolution (predicted to be about 3 percent at 40 keV) above the K shell of Xe.

Ramsey, B. D.↗
NASA NTRS1986

Gated photochemical hole burning in photoadducts of polyacenes

A photoadduct of anthracene and tetracene (A-T) in a polymer matrix at 1.5 K generates an absorption spectrum which exhibits two-color, photon-gated photochemical hole burning (PHB) when irradiated with narrowband exciting light into the 0-0 band of the S1-S0 absorption. The efficiency of this PHB process is found to be enhanced by simultaneous irradiation near the maximum of the Tn-T1 absorption of A-T; hole widths of less than 0.07/cm have been observed for this photochemical cleavage of A-T.

Iannone, Mark↗
NASA NTRS1986

Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

Excellent dc and millimeter-wave performance is reported in In0.15Ga0.85As/Al0.15Ga0.85As pseudomorphic modulation-doped field effect transistors (MODFET's) with 0.25-micron-length gates. Extrinsic transconductances as high as 495 mS/mm at 300 K and unprecedented power performance in the 60-GHz range were observed. Although not yet optimized, excellent low noise characteristics, 0.9 dB, with an associated gain of 10.4 dB at 18 GHz, and a noise figure of 2.4 dB with an associated gain of 4.4 dB at 62 GHz were obtained. This is the best noise performance ever reported for a MODFET in this frequency range. These results clearly demonstrate the superiority of pseudomorphic MODFET structures in high-frequency applications.

Henderson, T.↗
NASA NTRS1990

Porous-Floating-Gate Field-Effect Transistor

Porous-floating-gate, "vertical" field-effect transistor proposed as programmable analog memory device especially suitable for use in electronic neural networks. Analog value of electrical conductance of device represents synaptic weight (strength of synaptic connection) repeatedly modified by application of suitable writing or erasing voltage. Suited for hardware implementations of massively parallel neural-network architectures for two important reasons: vertical transistor structure requires only two external electrodes, and use of tailored amorphous semiconductors provides choice of very wide range of low conductivity values, dictated by overall power dissipation requirements in massively parallel neural-network circuits.

Thakoor, Anilkumar P.↗
NASA NTRS1989

Estimates of GATE convective and stratiform rainfall derived from radar and satellite data

The statistics of tropical rain system structure are studied, focusing on the division between convective and stratiform rainfall over the GARP Atlantic Tropical Experiment B-scale array. The satellite IR convective/stratiform technique of Adler and Negri (1988) is used to produce hourly estimates for two day of the GATE. The estimates are verified against the radar data. The results are compared with the results of Houze and Rappaport (1984) and Cheng and Houze (1979). The possible application of the results for estimating the vertical profile of latent heating is discussed.

Negri, Andrew J.↗
NASA NTRS1989

Auto- and hetero-associative memory using a 2-D optical logic gate

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

Chao, Tien-Hsin↗
NASA NTRS1990

Gated photomultiplier response characterization for DIAL measurements

The characteristics of various detector responses are studied to understand the cause of various systematic biases and to minimize these undesirable effects in measurements of transient signals with large dynamic range. Signal-induced bias, gain variation, and the linearity of commonly used gated photomultipliers in the current integrating mode are quantitatively evaluated. Analysis of the results indicates that impurity ions inside the photomultiplier tubes (PMT) are the source of the signal induced bias and gain variation. Two different PMTs used in this study show significant differences in the magnitude and decay behavior of signal-induced bias. It was found that it can be minimized by using an external amplifier to reduce PMT gain, and by applying a low potential between the cathode and first dynode. The linearity of a PMT is also studied over a large dynamic range of input intensities employing a new technique which does not require an absolute calibration. The result of this study shows that the photomultiplier response is linear only for a limited input intensity range below a certain anode current.

Lee, H. Sang↗
NASA NTRS1991

Test and evaluation of the generalized gate logic system simulator

The results of the initial testing of the Generalized Gate Level Logic Simulator (GGLOSS) are discussed. The simulator is a special purpose fault simulator designed to assist in the analysis of the effects of random hardware failures on fault tolerant digital computer systems. The testing of the simulator covers two main areas. First, the simulation results are compared with data obtained by monitoring the behavior of hardware. The circuit used for these comparisons is an incomplete microprocessor design based upon the MIL-STD-1750A Instruction Set Architecture. In the second area of testing, current simulation results are compared with experimental data obtained using precursors of the current tool. In each case, a portion of the earlier experiment is confirmed. The new results are then viewed from a different perspective in order to evaluate the usefulness of this simulation strategy.

Miner, Paul S.↗
NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, M. D.↗
NASA NTRS1991

Range estimation techniques in single-station thunderstorm warning sensors based upon gated, wideband, magnetic direction finder technology

Gated, wideband, magnetic direction finders (DFs) were originally designed to measure the bearing of cloud-to-ground lightning relative to the sensor. A recent addition to this device uses proprietary waveform discrimination logic to select return stroke signatures and certain range dependent features in the waveform to provide an estimate of range of flashes within 50 kms. The enhanced ranging techniques are discussed which were designed and developed for use in single station thunderstorm warning sensor. Included are the results of on-going evaluations being conducted under a variety of meteorological and geographic conditions.

Pifer, Alburt E.↗
NASA NTRS1990

Frequency-wavenumber spectrum for GATE phase I rainfields

The oceanic rainfall frequency-wavenumber spectrum and its associated space-time correlation have been evaluated from subsets of GATE phase I data. The records, of a duration of four days, were sampled at 15 minutes intervals in 4 x 4 km grid boxes over a 400 km diameter hexagon. In the low frequencies-low wavenumber region the results coincide with those obtained by using the stochastic model proposed by North and Nakomoto (1989). From the derived spectrum the inherent time and space scales of the stochastic model were determined to be approximately 13 hours and 36 km. The formalism proposed by North and Nakamoto was taken together with the derived spectrum to compute the mean square sampling error due to intermittent visits of a spaceborne sensor.

Nakamoto, Shoichiro↗
NASA NTRS1991

Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

Johnson, Gregory A.↗
NASA NTRS1990

A sun gate for Galileo spacecraft attitude control

The combination of a sun sensor called a sun gate (SG) and a digital programmable signal processor on the Galileo spacecraft attitude and articulation control subsystem (AACS) will orient the rotation axis of the spacecraft toward the sun to satisfy a new requirement imposed by the new spacecraft trajectory. The combination will continuously monitor the pointing direction of the rotation axis, and any off-sun excursions of more than a preset threshold will be detected, triggering appropriate actions by the flight software to prevent off-sun cone angles of more than 14 deg. The design of the SG is described in detail, its principle of operation is given, and the flight software processing of the SG output is discussed.

Mobasser, Sohrab↗
NASA NTRS1990

Multistep fluorescence gated proportional counters

A proportional counter is introduced in which the levels of energy and spatial resolutions and background rejection permit the application of the device to X-ray astronomy. A multistep approach is employed in which photons cause a signal that triggers the system and measures the energy of the incident photon. The multistep approach permits good energy resolution from parallel geometry and from the imaging stage due to coupling of the imaging and amplification stages. The design also employs fluorescence gating to reduce background, a method that is compatible with the multistep technique. Use of the proportional counter is reported for NASA's supernova campaign, and the pair background is below 0.0001 counts/sq cm sec keV at the xenon k-edge. Potential improvements and applications are listed including the CASES, POF, and EXOSS mission programs.

Ramsey, Brian D.↗
NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, Michael D.↗
NASA NTRS1992

Auto and hetero-associative memory using a 2-D optical logic gate

An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

Chao, Tien-Hsin↗
NASA NTRS1990

The background in a balloon-borne fluorescence-gated proportional counter

The results of an analysis of the background in a fluorescence-gated proportional counter operating over the energy range 3-150 keV are presented. It is found that the dominant background component is that produced by high energy qamma-rays that penetrate the shields and undergo multiple scattering in the detector body, resulting in photoelectric absorption in the detector gas. A careful choice of materials and thickness can move the peak of this emission outside of the detector sensitive range, thereby dramatically reducing the residual background.

Ramsey, B. D.↗