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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Activity and magnetic fields on stars from radio observations

Radio observations explain certain kinds of stellar activity and reliable estimates of magnetic field strengths are derived for the radio emitting regions. Radio observation of flare stars shows rapidly varying bursts of radiation with frequencies of up to 5 GHz. The inferred brightness temperatures of these bursts (10 to the 10th power to 10 to the 14th power) imply that the radiation is coherent. Two mechanisms are proposed to generate such radiation: (1) plasma radiation, and (2) electron cyclotron masers. The high brightness temperatures of the bursts up to 10 to the 20th power K) makes the latter the most plausible. For bursts in the 5 GHz range, the magnetic field strength would be approximately 900 Gauss.

Dulk, G. A.↗
NASA NTRS1993

Auger electron spectroscopy study of oxidation of a PdCr alloy used for high-temperature sensors

A Pd-13 wt. percent Cr solid solution is a promising high-temperature strain gage alloy. In bulk form it has a number of properties that are desirable in a resistance strain gage material, such as a linear electrical resistance versus temperature curve to 1000 C and stable electrical resistance in air at 1000 C. However, unprotected fine wire gages fabricated from this alloy perform well only to 600 C. At higher temperatures severe oxidation degrades their electrical performance. In this work Auger electron spectroscopy was used to study the oxidation chemistry of the alloy wires and ribbons. Results indicate that the oxidation is caused by a complex mechanism that is not yet fully understood. As expected, during oxidation, a layer of chromium oxide is formed. This layer, however, forms beneath a layer of metallic palladium. The results of this study have increased the understanding of the oxidation mechanism of Pd-13 wt. percent Cr.

Boyd, Darwin L.↗
NASA NTRS1987

Thermosetting Fluoropolymer Foams

New process makes fluoropolymer foams with controllable amounts of inert-gas fillings in foam cells. Thermosetting fluoropolymers do not require foaming additives leaving undesirable residues and do not have to be molded and sintered at temperatures of about 240 to 400 degree C. Consequently, better for use with electronic or other parts sensitive to high temperatures or residues. Uses include coatings, electrical insulation, and structural parts.

Lee, Sheng Yen↗
NASA NTRS1982

Plasma characteristics of the Io torus

Simultaneous, low spectral resolution measurements of the following Jovian plasma torus forbidden emission lines show the occurrence of significant changes in characteristics on a time scale of days: S II 4069, 4076 A; S II 6716, 6731 A; S III 3722 A; and O II 3726, 3729 A. The O II emission is more extensive in magnetic latitude than the S II emission, which is the expected result of the mass difference between the ions if they have a common temperature. The S II and O II lines yield independent and consistent values for the average electron density, and variations about this average are larger than the measurement uncertainties. Unusual spectra in which the blue, but not the red S II forbidden lines are present indicate transient conditions of high plasma density and low electron temperature.

Morgan, J. S.↗
NASA NTRS1982

Room-temperature mercuric iodide spectrometry for low-energy X-rays

A discussion of the limits of energy resolution in different energy ranges is given. The energy resolution of a spectrometer is analyzed in terms of the parameters characterizing the crystal, the detector, and the amplification electronics. A high-resolution room-temperature HgI2 spectrometry system was used to measure low-energy X-ray fluorescence spectra. For the MgK-alpha X-ray line the measured resolution was 245 eV (fwhm); the electronic noise linewidth of the system was 225 eV. Alpha-particles were used to excite X-ray fluorescence from low-Z elements separately or in combination. The shape of the photopeaks in the spectra is discussed.

Kusmiss, J. H.↗
NASA NTRS1971

Probe and radar electron temperatures in an isotropic nonequilibrium plasma.

Electron temperatures measured by electrostatic probes and radar backscatter are distinct physical quantities, the temperature from each technique determined from a different moment of the electron-distribution function. Numerical inequality of temperatures results from a non-Maxwellian electron-distribution function or, equivalently, from a nonequilibrium electron plasma. Probe and backscatter electron temperatures are studied for low- and high-energy (isotropic) distortions of the distribution function. The nonequilibrium plasma generally produces higher probe than backscatter temperatures; however, the temperature difference is small for distortions due to realistic photoelectron populations. If the ionosphere is in a highly nonequilibrium state, probe and backscatter temperatures would differ from the temperature characterizing the average electron kinetic energy, and a single temperature applicable to a variety of physical processes would no longer exist.

Hoegy, W. R.↗
NASA NTRS1978

Compton interaction of free electrons with intense low frequency radiation

Electron behavior in an intense low frequency radiation field, with induced Compton scattering as the primary mechanism of interaction, is investigated. Evolution of the electron energy spectrum is studied, and the equilibrium spectrum of relativistic electrons in a radiation field with high brightness temperature is found. The induced radiation pressure and heating rate of an electron gas are calculated. The direction of the induced pressure depends on the radiation spectrum. The form of spectrum, under the induced force can accelerate electrons to superrelativistic energies is found.

Illarionov, A. F.↗
DOE OSTI2024

Foreword: Special Section on Multiphysics Aspects of Power Electronics Packaging—Power Die, Power Module, and Converter Level: Part 2

Power electronics are increasingly being used to condition electricity for a wide array of applications, such as transportation (on land, air, and water), data centers, radio frequency, directed energy, wind, solar, and grid-tied applications. Here, to increase power density, performance, efficiency, and reliability-as well as to reduce cost-innovations and developments are needed in the multiphysics packaging of power electronics at a die, module, and converter level. This includes fundamental R&D related to emerging high-voltage, high-temperature, and high-switching-frequency power electronics, packaging materials, thermal materials and interfaces, fluid-based thermal management technologies, reliability, condition monitoring, and prognostics. Latest developments in this area are published as a Special Section on Multiphysics Aspects of Power Electronics Packaging. The first part was published in the May 2024 issue of the IEEE Transactions on Components, Packaging and Manufacturing Technology (Volume 14, Issue 5). The second part of that Special Section is being published in this issue. A brief summary of the papers included in the second part are given below.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Influence of implantation temperature and He implantation-induced defects on morphological evolution of co-deposited Cu-Mo nanocomposites

Here, we investigate the effect of high-temperature helium (He) implantation on microstructural evolution in physical-vapor-co-deposited nanocomposite thin films of copper (Cu) and molybdenum (Mo). The microstructure morphologies of He-implanted and He-free domains are characterized using transmission electron microscopy and statistical analysis. High implantation temperatures (500°C and 750°C) lead to coarsening of Cu and Mo domains and their eventual reorientation. The microstructure evolution in He-implanted and He-free domains is comparable, indicating that implantation-induced defects do not accelerate the coarsening of the nanocomposite as compared to annealing alone. This observation contrasts with previously reported effects of implantation-induced defects on single-phase nanocrystalline metals, which include enhancement of grain growth by increasing self-diffusivity or its inhibition by pinning of grain boundaries.

36 MATERIALS SCIENCE↗
NASA NTRS1994

NASA/CARES dual-use ceramic technology spinoff applications

NASA has developed software that enables American industry to establish the reliability and life of ceramic structures in a wide variety of 21st Century applications. Designing ceramic components to survive at higher temperatures than the capability of most metals and in severe loading environments involves the disciplines of statistics and fracture mechanics. Successful application of advanced ceramics material properties and the use of a probabilistic brittle material design methodology. The NASA program, known as CARES (Ceramics Analysis and Reliability Evaluation of Structures), is a comprehensive general purpose design tool that predicts the probability of failure of a ceramic component as a function of its time in service. The latest version of this software, CARESALIFE, is coupled to several commercially available finite element analysis programs (ANSYS, MSC/NASTRAN, ABAQUS, COSMOS/N4, MARC), resulting in an advanced integrated design tool which is adapted to the computing environment of the user. The NASA-developed CARES software has been successfully used by industrial, government, and academic organizations to design and optimize ceramic components for many demanding applications. Industrial sectors impacted by this program include aerospace, automotive, electronic, medical, and energy applications. Dual-use applications include engine components, graphite and ceramic high temperature valves, TV picture tubes, ceramic bearings, electronic chips, glass building panels, infrared windows, radiant heater tubes, heat exchangers, and artificial hips, knee caps, and teeth.

Powers, Lynn M.↗
NASA NTRS1986

Strength and microstructure of Si3N4 sintered with ZrO2 additions

Densities greater than 99 percent of theoretical were obtained with stabilized ZrO2 additions to Si3N4. Material sintered at 2140 C under 2.5 MPa nitrogen overpressure with 3.8, 9.9, and 13.4 wt pct ZrO2 had a predominantaly equiaxed grain size ranging from 0.2 to 7.0 microns. At 1370 C, the latter composition exhibited a flexural strength of about 487 MPa, equal to that of a finer-grain-size, hot-pressed Si3N4 + ZrO2 material having excellent high-temperature static fatigue properties. Transmission electron microscopy of the sintered Si3N4 revealed a glassy grain-boundary phase at all three ZrO2 levels and partially crystalline triple points for the 9.9 and 13.4 wt pct ZrO2-containing materials. Slow crack growth was observed for 1370 C flexure tests and correlated with nonlinear load deflection traces for stresses greater than 503 MPa. The crystallization of the grain-boundary glass is insterpreted as beneficial to the attainment of high (1370 C) flexural strength.

Sanders, W. A.↗
NASA NTRS1982

Effects of nuclear forces on ion thermalization in high-temperature plasmas

A number of investigations have been concerned with the kinetic theory and processes associated with a relativistic electron gas. Gould (1981) has considered a condition in which upon the ultimate thermalization the temperature can be such that the electron gas is highly relativistic while the gas of protons and other ions is nonrelativistic. With the nuclear component nonrelativistic but having energies in the MeV range and above, it is necessary to consider the effects of nuclear forces in the scattering of the ions in their thermalization. The effects of nuclear forces in the thermalization of ions in plasmas have been computed, principally in connection with problems of controlle; fusion. The present investigation is concerned with an attempt to express results in analytic form to as great a degree as possible. The p-p problem, which is the fundamental problem in astrophysical plasma, is studied. Attention is given to a low-energy formulation, the s-wave phase shift, the effective stopping number, Fokker-Planck operators, and the interaction with the electron gas.

Gould, R. J.↗
NASA NTRS2008

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗
NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗
NASA NTRS1987

Apparatus ad method for quiescent containerless processing of high temperature metals and alloys in low gravity

The electron bombardment furnace consists of two confinement grid sections which may be moved and separated from each other. Inside the bombardment furnace, a tungsten element is enclosed. The material specimen is located within the tungsten element and grounded by means of grounded support wires connected to the respective sections of the furnace. The material specimen is supported on the ground wires and heated by electron bombardment until melt occurs. The furnace sections are separated in opposite directions causing the ground wires to pull from the surfaces of the specimen, leaving the specimen freely suspended in the process chamber without the action of external forces. The specimen remains in its melt condition in the processing chamber where it can be undercooled without external forces acting on the specimen, which would cause dynamic nucleation.

Robinson, Michael B.↗
NASA NTRS2006

Sensor Amplifier for the Venus Ground Ambient

Previous Venus Landers employed high temperature pressure vessels, with thermally protected electronics, to achieve successful missions, with a maximum surface lifetime of 127 minutes. Extending the operating range of electronic systems to the temperatures (480 C) and pressures (90 bar) of the Venus ground ambient would significantly increase the science return of future missions. Toward that end, the current work describes the innovative design of a sensor preamplifier, capable of working in the Venus ground ambient and designed using commercial components (thermionic vacuum tubes, wide band gap transistors, thick film resistors, advanced high temperature capacitors, and monometallic interfaces) To identify commercial components and electronic packaging materials that are capable of operation within the specified environment, a series of active devices, passive components, and packaging materials were screened for operability at 500C, assuming a 10x increase in the mission lifetime. In addition. component degradation as a function of time at 500(deg)C was evaluated. Based on the results of these preliminary evaluations, two amplifiers were developed.

Venus electronics↗
DOE OSTI2025

Electron-Phonon Renormalization in the Proton-Conducting Electrolyte Ba Zr O 3 and Its Implications for High-Temperature Electrolysis

Electrical leakage is an inherent problem in solid-oxide fuel and electrolyzer cells, limiting their energy-conversion efficiency. High concentrations of electrons or holes can exacerbate this issue. However, it is largely unclear how the typical high operating temperatures of the systems influence their charge-carrier concentrations. In this work, we use first-principles calculations to examine how lattice vibrations impact electrical conductivity in conventional electrolytes, using Ba Zr O 3 as a representative material. Our analysis shows that phonon-induced shifts in the band gap and band edges lead to a dramatic increase in p -type carrier concentrations at temperatures above 600 K, compared to models that neglect temperature effects. Additionally, we reveal the importance of oxygen-ion motion on band-edge positions, which makes valence-band-edge shift dominate the band-gap change. Our study provides a protocol for calculating phonon-induced changes in similar oxides, paving the way for interrogating electrical leakage in electrolytes for high-temperature operation. Published by the American Physical Society 2025

25 ENERGY STORAGE↗