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At least 361 records · Page 20

Reliability Testing of NASA Piezocomposite Actuators

NASA Langley Research Center has developed a low-cost piezocomposite actuator which has application for controlling vibrations in large inflatable smart space structures, space telescopes, and high performance aircraft. Tests show the NASA piezocomposite device is capable of producing large, directional, in-plane strains on the order of 2000 parts-per-million peak-to-peak, with no reduction in free-strain performance to 100 million electrical cycles. This paper describes methods, measurements, and preliminary results from our reliability evaluation of the device under externally applied mechanical loads and at various operational temperatures. Tests performed to date show no net reductions in actuation amplitude while the device was moderately loaded through 10 million electrical cycles. Tests were performed at both room temperature and at the maximum operational temperature of the epoxy resin system used in manufacture of the device. Initial indications are that actuator reliability is excellent, with no actuator failures or large net reduction in actuator performance.

Wilkie, W.↗

Open-Source Software for Modeling of Nanoelectronic Devices

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Oyafuso, Fabiano↗

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Pain, Bedabrata↗

Compound Semiconductor Devices for Space Applications

Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.

Kayali, Sammy↗

Silicon/Carbon Nanotube Photocathode for Splitting Water

A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

Amashukeli, Xenia↗

Applications of Fracture Mechanics to Quantitative Accelerated Life Testing of Plastic Encapsulated Microelectronics

Accelerated testing must address the failure mechanisms active within the devices undergoing tests in order to assess lifetimes in a meaningful way. The assumption of constant temperature, thermally activated lifetime, based upon the Arrhenius assumptions, does not always provide the necessary understanding to interpret accelerated tests in microelectronics. Plastic encapsulants, dielectric polymers, and underfill materials are subject to delamination and cracking with thermal cycling. Crack propagation during use environment exposure, drives the potential for failure of microelectronic devices and is therefore a necessary focal point in qualification and life testing. This paper reviews the available research in the application of fracture mechanics to this class of problems in microelectronics including relevant test data. In addition, useful acceleration factor models are derived for polymer crack propagation based on principles of linear elastic fracture mechanics. Further, a simple approach to estimating the minimum temperature cycling ranges, necessary to propagate a crack, is also presented. Finally, a methodology of applying acceleration factors to develop testing plans is shown, with an example in spaceflight for a cubesat in low Earth orbit. Overall, this is a paper that shows a useful and appropriate process for creating physics of failure based life testing for delamination and cracking failures in microelectronic polymers in a temperature cycling environment.

Accelerated testing↗

Program for the exploitation of unused NASA patents

The program to exploit unused NASA patents through the use of a multidisciplinary approach involving faculty students, and research staff is reported. NASA patents were screened for their applicability outside the space program, specific applications were identified, and the technical and commercial feasibility of these applications was established. Also application of this technology by governmental agencies outside the space program was sought. The program was specifically interested in energy absorbing devices such as those developed for lunar soft landings. These energy absorbing devices absorb large amounts of mechanical energy but are, in general, not reusable. Some of these devices can also operate as structural elements until their structural load capacity is exceeded and they become activated as energy absorbers. The capability of these devices to operate as structural elements and as energy absorbing devices makes them candidates for many applications in the fields of transportation and materials handling safety where accidents take a large toll in human injury and property damage.

Fay, R. J.↗

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Ting, David Z.-Y.↗

Compact table-tilting mechanism

Optical components are oriented precisely by motorized device for manipulating objects attached to plane tilt table. Mechanism is compact, simple, and has low backlash. It consists of drive motor, rotatable disk, rigid link, and table. Motor rotates about vertical axis, and motion is converted through disk and rigid link to rotation of table about perpendicular axis.

Mitchell, F. R.↗

Update - Body of Knowledge (BOK) for Copper Wire Bonds

Copper wire bond technology developments continue to be a subject of technical interest to the NASA (National Aeronautics and Space Administration) NEPP (NASA Electronic Parts and Packaging Program) which funded this update. Based on this new research, additional copper bond wire vulnerabilities were found in the literature - Crevice corrosion, intrinsic degradation of palladium coated copper wire, congregation of palladium near ball bond interface leading to failure, residual aluminum pad metallization impact on device lifetimes, stitch cracking phenomena, package delamination's that have resulted in wire bond failures and device failure due to elemental sulfur. A search of the U.S.A. patent web site found 3 noteworthy patents on the following developments: claim of a certain IMC (Intermetallic Compound) thickness as a mitigation solution to chlorine corrosion; claim of using materials with different pHs to neutralize contaminants in a package containing copper wire bonds; and a discussion on ball shear test threshold values for different applications. In addition, an aerospace contractor of military hardware had a presentation on copper bond wires where it was reported that there was a parametric shift and noise susceptibility of devices with copper bond wires which affected legacy design performance. A review of silver bond wire (another emerging technology) technical papers found that an electromigration failure mechanism was evident in device applications that operate under high current conditions. More studies may need to be performed on a comprehensive basis. Research areas for consideration are suggested, however, these research and or qualification/standard test areas are not all inclusive and should not be construed as the element (s) that delivers any potential copper wire bond solution. A false sense of security may occur, whenever there is a reliance on passing any particular qualification, standard, or test protocol.

Rutkowski, E.↗

Device for pitching off metal tubes

Toggle mechanism is used to trap gas samples within small diameter metal tubes. Device is easily actuated and seals off without fracture.

Stengard, E. O.↗

Electro-mechanical sine/cosine generator

An electromechanical device for generating both sine and cosine functions is described. A motor rotates a cylinder about an axis parallel to and a slight distance from the central axis of the cylinder. Two noncontacting displacement sensing devices are placed ninety degrees apart, equal distances from the axis of rotation of the cylinder and short distances above the surface of cylinder. Each of these sensing devices produces an electrical signal proportional to the distance that it is away from the cylinder. Consequently, as the cylinder is rotated the outputs from the two sensing devices are the sine and cosine functions.

Flagge, B.↗

Mechanical loader for testing composites

Device applies constant preload to environmentally cycled specimens. Loading spring for each specimen has sufficiently large deflection to insure insignificant degree of change in specimen load during thermal cycling.

Daniel, I. M.↗

Overhead-handling, universal-positioning device

Lift-and-rotate mechanism can raise payload and reorient it while it is suspended in space. Mechanism is itself suspended from overhead lift point and is operated from single pendant/reel control panel. Lift capacity and size of mechanism is determined by application.

Johnson, M.↗

Development of shape memory metal as the actuator of a fail safe mechanism

A small, compact, lightweight device was developed using shape memory alloy (SMA) in wire form to actuate a pin-puller that decouples the flanges of two shafts. When the SMA is heated it contracts producing a useful force and stroke. As it cools, it can be reset (elongated in this case) by applying a relatively small force. Resistive heating is accomplished by running a current through the SMA wire for a controlled length of time. The electronics to drive the device are not elaborate or complicated, consisting of a timed current source. The total available contraction is 3 percent of the length of the wire. This device, the engineering properties of the SMA, and the tests performed to verify the design concept are described.

Ford, V. G.↗