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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20

Permanently Magnetized Insulating Thin-Film Devices by Reduction

A reduction-based manufacturing process for creating technologically important multilayer structures from lattice-matched ferromagnetic insulators and ferromagnetic conductors is reported. The process is demonstrated by growing a permanently magnetized double-layer structure, consisting of lattice-matched conducting (Ni,Co) and insulating (Ni 0.4 Co 0.6 ) 3 O 3 layers, through a single deposition cycle. The orientation of the metal cation network is preserved after reduction. Close-packing displacements of Ni and Co take place in such a manner that the in-plane hexagonal arrangement is preserved. This is critical for ensuring high-quality interfaces joining the layers. At room temperature the hysteresis loop is centered. At low temperature the oxide layer becomes ferrimagnetically ordered, accompanied by a shift of the hysteresis loop along the magnetic field axis. The shift is assigned to exchange bias phenomenon. Biaxial compressive strain is responsible for the required ferrimagnetic ordering. Finally, spin valves and closely related magnetoresistance random access memory and spin-transfer-torque magnetic random access memory devices are addressed as potential applications.

42 ENGINEERING↗

Androgynous { 10 1 ¯ 2 } twin in zinc

Under ambient conditions, Zn is a hexagonal metal with a large c / a ratio of 1.856. Plastic deformation is predominantly accommodated by basal 〈 a 〉 slip and compression twins on the { 10 1 ¯ 2 } planes. Increasing hydrostatic pressure drastically reduces the c / a ratio of Zn and, when a critical threshold of c / a = 3 at about 10 GPa is crossed, the { 10 1 ¯ 2 } twins are predicted to change from compressive to tensile in nature. What happens at the transition point, when c / a = 3 , remains unknown. Here, we strain-cycle a textured polycrystalline sample of pure Zn at uniform hydrostatic pressures ranging between 2 and 17 GPa, over which the c / a ratio crosses the c / a = 3 compressive-tensile transition for { 10 1 ¯ 2 } twins. During deformation, the state of the sample is monitored through x-ray diffraction to extract texture and internal strain evolution. By comparing the experimental results with the predictions of an elastoviscoplastic polycrystal simulation, we confirm the androgynous nature of { 10 1 ¯ 2 } twin response at low and high pressures. When c / a = 3 , polycrystalline Zn does not display any evidence of twinning and its plastic behavior is controlled by mostly basal and pyramidal 〈 c + a 〉 slip activity, with a very small contribution of prismatic 〈 a 〉 slip. Evidence for the activity of other { 10 1 ¯ n } twinning modes, which have been suggested for Zn under high pressure, are not observed. Published by the American Physical Society 2024

Merkel, Sébastien (ORCID:000000032767581X)↗

Magnetic compressibility of layered ferromagnet under pressure

This study systematically investigates the magnetic properties of the layered ferromagnet MnPt 5 As under pressure through a combination of experimental measurements and theoretical simulations. MnPt 5 As exhibits a ferromagnetic transition at approximately 301 K. Neutron diffraction measurements under applied pressures up to ∼4.9 GPa were performed over a temperature range from 320 to 100 K to probe its magnetic behavior. The results confirm that the Mn atoms maintain a ferromagnetic order under applied pressures, consistent with the ambient-pressure findings. However, magnetic anisotropy is notably suppressed. To further elucidate the compressibility of magnetic anisotropy in MnPt 5 As, x-ray diffraction under pressure was conducted. The results reveal that the c-axis undergoes a greater and more rapid compression compared to the ab -plane, which may contribute to the observed suppression of Mn ferromagnetic ordering along the c -axis. Additionally, theoretical calculations indicate that magnetic ordering exhibits a similar pressure-induced trend under applied pressure, supporting the experimental observations. These findings offer insights into the pressure-dependent magnetic properties and anisotropy of MnPt 5 As, with potential implications for strain engineering in Mn-based magnetic devices.

Electronic band structure↗

Dynamic properties of 316l stainless steel repaired using electron beam additive manufacturing

Additive manufacturing has the potential to be used for repair of high-value parts, but the strength and integrity of such repaired parts, especially under dynamic loading, in still unknown. This work presents the results of high strain-rate dynamic testing of additively repaired stainless steel samples. The 316L samples were intentionally damaged and subsequently repaired with 308L stainless steel wire using electron beam additive manufacturing. The repaired samples were subjected to gas-gun impact testing to induce incipient damage and determine the role played by the repaired region in dictating damage and failure. The results show the following: 1) the equation of state of the repaired region is comparable to the original material as shown by the unchanged spall plane location, 2) the deformation behavior is similar to the original material as shown by the similar Hugoniot Elastic limit, 3) the spall strength of the repaired region is slightly higher than the original material due to varying grain size, and 4) the damage morphology in the repaired region is different and involves a high rate of void coalescence. In conclusion, despite these minor differences in the spall strength and the damage morphology, the overall dynamic response of the original material and repaired samples is similar suggesting that AM is a promising approach for repairing high-value components.

36 MATERIALS SCIENCE↗

Predicting Fracture Network Development in Crystalline Rocks

The geometric properties of fractures influence whether they propagate, arrest, or coalesce with other fractures. Thus, quantifying the relationship between fracture network characteristics may help predict fracture network development, and perhaps precursors to catastrophic failure. To constrain the relationship and predictability of fracture characteristics, we deform eight one centimeter tall rock cores under triaxial compression while acquiring in situ X-ray tomograms. The tomograms reveal precise measurements of the fracture network characteristics above the spatial resolution of 6.5 µm. We develop machine learning models to predict the value of each characteristic using the other characteristics, and excluding the macroscopic stress or strain imposed on the rock. The models predict fracture development more accurately in the experiments performed on granite and monzonite, than the experiments on marble. Fracture network development may be more predictable in these igneous rocks because their microstructure is more mechanically homogeneous than the marble, producing more systematic fracture development that is not strongly impeded by grain contacts and cleavage planes. The varying performance of the models suggest that fracture volume, length, and aperture are the most predictable of the characteristics, while fracture orientation is the least predictable. Orientation does not correlate with length, as suggested by the idea that the orientation evolves with increasing differential stress and thus fracture length. This difference between the observed and expected relationship between orientation and length highlights the influence of mechanical heterogeneities and local stress perturbations on fracture growth as fractures propagate, link, and coalesce.

58 GEOSCIENCES↗

Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature

Ultrathin (5–50 nm) epitaxial superconducting niobium nitride (NbN) films were grown on AlN-buffered c-plane Al 2 O 3 by an industrial scale physical vapor deposition technique at 400°C. Both X-ray diffraction and scanning electron microscopy analysis show high crystallinity of the (111)-oriented NbN films, with a narrow full-width-at-half-maximum of the rocking curve down to 0.030°. The lattice constant decreases with decreasing NbN layer thickness, suggesting lattice strain for films with thicknesses below 20 nm. The superconducting transition temperature, the transition width, the upper critical field, the irreversibility line, and the coherence length are closely correlated to the film thickness. This work realized high quality ultrathin epitaxial NbN films by an industry-scale PVD technology at low substrate temperature, which opens up new opportunities for quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Combined Computational and Mathematical Analysis of Interconnect Fatigue Potential in Photovoltaic Modules

A finite element model of a 60-cell monocrystalline silicon glass-polymer photovoltaic module was simulated with ±1.0 kPa and ±2.4 kPa loads applied to the glass to calculate the deformation under load. Cell-to-cell displacements were used to approximate interconnect strain and stress. A mathematical fatigue cycle life relation was fitted to data for the interconnect material (copper), to generate a life prediction at each interconnect location based on the local stress means, reversal extents, and amplitudes. Interconnect stress was found to be significantly asymmetric about zero despite symmetric positive and negative module loads due to laminate thickness offsets about the neutral plane and the effects of module framing. Cycle life results indicated that interconnect fatigue failure was unlikely to occur over a 30-year lifetime of conservative wind and snow load cycles since the typical cell design feature of leaving some unconstrained length between the cell edge and first solder pad increases the effective gauge length and decreases the stress levels below the material endurance limit. Follow-up analyses found that 3.6 mm and 6.4 mm were the minimum unconstrained lengths required to survive the assumed lifetime of wind and snow cycles, respectively, confirming that typical industrial module constructions with 8–15 mm unconstrained lengths should survive conservatively. Notably, large magnitude, low-cycle snow loading was consistently the limiting factor requiring a longer unconstrained interconnect length. Finally, insights and workflows from this study inform module interconnection design limits for survival against mechanical fatigue in deployment environments.

14 SOLAR ENERGY↗

Enhanced mobility of dislocation network nodes and its effect on dislocation multiplication and strain hardening

Understanding plastic deformation of crystals in terms of the fundamental physics of dislocations has remained a grand challenge in materials science for decades. To overcome this, the Discrete Dislocation Dynamics (DDD) method has been developed, but its lack of atomistic resolution leaves open the possibility that certain key mechanisms may be overlooked. Here, by comparing large-scale Molecular Dynamics (MD) with DDD simulations performed under identical conditions we uncover significant discrepancies in the predicted strength and microstructure evolution in BCC crystals under high-strain rate conditions. These are traced to unexpected behaviors of dislocation network nodes forming at dislocation intersections, that can move in ways not previously anticipated as revealed by MD. Once these newfound freedoms of nodal motion are incorporated, DDD simulations begin to closely match plastic evolution observed in MD. This additional mechanism of motion whereby non-screw dislocations can change their glide plane profoundly affects fundamental processes of dislocation multiplication, recovery and storage that define strength of metals.

36 MATERIALS SCIENCE↗

Local Interface Effects Modulate Global Charge Order and Optical Properties of 1T–TaS2/1H–WSe2 Heterostructures

1T-TaS2 is a layered charge density wave (CDW) crystal exhibiting sharp phase transitions and associated resistance changes. These resistance steps could be exploited for information storage, underscoring the importance of controlling and tuning the CDW states. Given the importance of out-of-plane interactions in 1T-TaS2, modulating interlayer interactions by heterostructuring is a promising method for tailoring CDW phase transitions. In this work, we investigate the optical and electronic properties of heterostructures comprising 1T-TaS2 and monolayer 1H-WSe2. By systematically varying the thickness of 1T-TaS2 and its azimuthal alignment with 1H-WSe2, we find that intrinsic moiré strain and interfacial charge transfer introduce CDW disorder in 1T-TaS2 and modify the CDW ordering temperature. Furthermore, our studies reveal that the interlayer alignment impacts the exciton dynamics in 1H-WSe2, indicating that heterostructuring can concurrently tailor the electronic phases in 1T-TaS2 and the optical properties of 1H-WSe2. This work presents a promising approach for engineering the optoelectronic behavior of heterostructures that integrate CDW materials and semiconductors.

charge density wave↗

Upgrades and redesign of the National Ignition Facility’s soft x-ray opacity spectrometer (OpSpec)

The soft x-ray Opacity Spectrometer (OpSpec) used on the National Ignition Facility (NIF) has recently incorporated an elliptically shaped crystal. The original OpSpec used two convex cylindrical crystals for time-integrated measurements of point-projection spectra from 540 to 2100 eV. However, with the convex geometry, the low-energy portion of the spectrum suffered from high backgrounds due to scattered x-rays as well as reflections from alternate crystal planes. An elliptically shaped crystal allows an acceptance aperture at the crossover focus between the crystal and the detector, which reduces background and eliminates nearly all reflections from alternate crystal planes. The current elliptical design is an improvement from the convex cylindrical design but has a usable energy range from 900 to 2100 eV. In addition, OpSpec is currently used on 18 NIF shots/year, in which both crystals are typically damaged beyond reuse, so efficient production of 36 crystals/year is required. Design efforts to improve the existing system focus on mounting reliability, reducing crystal strain to increase survivability between mounting and shot time, and extending the energy range of the instrument down to 520 eV. The elliptical design, results, and future options are presented.

Wallace, M. S. (ORCID:0000000310871216)↗

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanical behavior and shear band of a powder-metallurgy-fabricated CoCrFeMnNi high-entropy alloy during high strain-rate deformation

High-entropy alloys (HEAs) fabricated by powder metallurgy are considered to exhibit extremely-great potential application values in the field for high-speed impact deformation due to their uniform microstructures and compositions. The mechanical behavior of a powder-metallurgy-fabricated (PM) CoCrFeMnNi HEA was investigated at room temperature with strain rates ranging from 1200 s -1 to 2800 s -1 . It was found that the serration behavior and shear localization of the alloy under dynamic conditions occurred. Results also indicated that the serrated flow took place in the PM CoCrFeMnNi HEA during mechanical deformation at high strain rates (>1000 s -1 ) and became more pronounced as the strain rate increased. Furthermore, it was determined that the yield-strength values of the PM CoCrFeMnNi HEA were sensitive to strain rates, where the values increased from 500 MPa to 700 MPa when the strain rates increased from 1200 s -1 to 2800 s -1 . Shear bands with a width of about 20 μm were generated in the PM CoCrFeMnNi HEA after the shear stress reached a maximum value of 635 MPa, which corresponded to a nominal strain of about 8.71. Nanotwins and ultrafine-equiaxed grains with a diameter of about 150 nm also developed at the core of the shear band during deformation. The results revealed that the strength of the shear band was much higher than that of the matrix grain. Nanotwins in the shear band were composed of a single face-centered-cubic (FCC) structure with the twin plane of ($\bar{1}$1$\bar1$), which could be formed via a rotational dynamic recrystallization (RDR).

36 MATERIALS SCIENCE↗

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Abstract The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibility inherent to these three-dimensional device geometries necessitates direct measurement of their deformation. Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing mechanisms at different length scales contributing to the deformation. One is consistent with the in-plane elastic relaxation due to the Ge lattice mismatch with the surrounding Si. The second is associated with the out-of-plane layering of the Si and SiGe regions at a length scale of film thickness. Complementary mechanical modeling corroborated the qualitative aspects of the deformation profiles observed across a variety of nanosheet sample widths. However, greater deformation is observed in the SiGe layers of the nanosheets than the predicted distributions. These insights could play a role in predicting carrier mobilities of future devices.

Murray, Conal E. (ORCID:0000000199014290)↗

Contrasting structural reversibility and magnetic correlations in isostructural honeycomb magnets CrCl3 and 𝛼−RuCl3

We report a comparative neutron single crystal diffraction study of the structural and magnetic properties of layered halides CrCl3 and 𝛼−RuCl3. They host a honeycomb arrangement of transition metal ions with distinct electronic configurations and undergo a first-order structural transition between high-temperature 𝐶⁢2/𝑚 and low-temperature 𝑅⁢‾‾‾3. Both compounds show a step-like change in the 𝑐-lattice parameter across the structure transition. In contrast, the in-plane lattice response is quite different: 𝛼−RuCl3 exhibits an abrupt hysteretic change across the transition accompanied by progressive crystalline degradation upon thermal cycling, whereas CrCl3 shows a smooth in-plane lattice evolution and remains structurally robust. Magnetically, CrCl3 orders into an A-type antiferromagnetic structure at 𝑇𝑁=14 K and exhibits pronounced diffuse magnetic scattering extending up to about 40 K. 𝛼−RuCl3 shows no observable magnetic diffuse scattering above its zigzag antiferromagnetic ordering temperature 𝑇𝑁=7.6 K. These results suggest that the contrasting structural responses arise from an interplay between interlayer sliding energetics, stacking-strain coupling, and elastic accommodation of the stacking transition. The distinct chemical bonding and electronic configurations of the two compounds provide a microscopic basis for their different lattice responses to the structure transition and magnetic correlations.

Morgan, Zachary [ORNL] (ORCID:0000000243625911)↗

Visualizing Energy Transfer at Buried Interfaces in Layered Materials Using Picosecond X-Rays

Understanding the fundamentals of nanoscale heat propagation is crucial for next-generation electronics. For instance, weak van der Waals bonds of layered materials are known to limit their thermal boundary conductance (TBC), presenting a heat dissipation bottleneck. In this paper we present a new non-destructive method to probe heat transport in nanoscale crystalline materials using time-resolved x-ray measurements of photo-induced thermal strain. This technique directly monitors time-dependent temperature changes in the crystal and the subsequent relaxation across buried interfaces by measuring changes in the c-axis lattice spacing after optical excitation. We investigate films of five different layered transition metal dichalcogenides MoX 2 [X= S, Se, Te] and WX 2 [X= S, Se] as well as graphite and a W-doped alloy of MoTe 2 , on c-plane sapphire substrates, finding TBC values in the range 10-30 MWm -2 K -1 at room temperature. In conjunction with molecular dynamics simulations, we show that the high thermal resistances are a consequence of weak interfacial van der Waals bonding and low phonon irradiance. This work paves the way for an improved understanding of thermal bottlenecks in emerging three-dimensional heterogeneously integrated technologies.

36 MATERIALS SCIENCE↗

Octahedron rotation evolution in 2D perovskites and its impact on optoelectronic properties: the case of Ba–Zr–S chalcogenides

Octahedron rotation (OR) is a unique structural feature in most perovskite materials. During dimensional reduction from bulk to two-dimensional (2D) perovskites, how the OR pattern evolves is still an open question. Here, we employ an adapted Glazer's notation from bulk perovskites to systematically study the structural evolution of 2D perovskites by fully considering the possible OR patterns. Applying this approach to the 2D Ba–Zr–S system, we establish the relationship between the OR pattern and slab thickness. It is found that as the thickness decreases, the OR pattern undergoes a transition by suppressing out-of-plane rotations. The OR in 2D chalcogenide perovskites could result in an anti-confinement effect, i.e., reducing the band gap to even below that of the bulk by countering the quantum confinement effect. In addition, we show that the Ba–Zr–S 2D perovskites exhibit reasonable electron mobility of ~150 cm 2 V –1 s –1 and large exciton binding energy of ~0.9 eV. In conclusion, combining the slab thickness and strain as effective knobs for widely tuning the electronic structure, we suggest the 2D chalcogenide perovskites as promising optoelectronic materials.

36 MATERIALS SCIENCE↗