CFD Modeling and Simulation in Materials Processing 2018
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Radioiodine interferes significantly in short-lived and low yield fission product detection by radiometric means. A simple method has been developed for removing radiotellurium and its radioiodine daughters from process HEU analyte streams. The method uses metallic copper relying on the electrochemical behavior between Cu and Te to deposit Te on the surface of Cu packed chromatography columns. Method development on stable metal samples exhibited >93% Te removal from high HCl conditions (>5 M). The method was applied to processed HEU streams providing > 90% Te removal (examining 129mTe and 132Te), and providing > 99.9% radioiodine removal (examining 131I and 132I).
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The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron–hole and exciton–phonon interactions, is a great challenge for modern computational science. These NCs typically contain thousands of atoms and tens of thousands of valence electrons with discrete spectra at low excitation energies, similar to atoms and molecules, that converge to the continuum bulk limit at higher energies. Computational methods developed for molecules are limited to very small nanoclusters, and methods for bulk systems with periodic boundary conditions are not suitable due to the lack of translational symmetry in NCs. This perspective focuses on our recent efforts in developing a unified atomistic model based on the semiempirical pseudopotential approach, which is parameterized by first-principle calculations and validated against experimental measurements, to describe two of the main nonradiative relaxation processes of quantum confined excitons: exciton cooling and Auger recombination. Here, we focus on the description of both electron–hole and exciton–phonon interactions in our approach and discuss the role of size, shape, and interfacing on the electronic properties and dynamics for II–VI and III–V semiconductor NCs.
We provide practical simulation methods for scalar field theories on a quantum computer that yield improved asymptotics as well as concrete gate estimates for the simulation and physical qubit estimates using the surface code. We achieve these improvements through two optimizations. First, we consider a finite volume approach for estimating the elements of the S-matrix. This approach is appropriate in general for 1+1D and for certain low-energy elastic collisions in higher dimensions. Second, we implement our approach using a series of different fault-tolerant simulation algorithms for Hamiltonians formulated both in the field occupation basis and field amplitude basis. Our algorithms are based on either second-order Trotterization or qubitization. The cost of Trotterization in occupation basis scales as O ( λ N 7 | Ω | 3 / ( M 5 / 2 ϵ 3 / 2 ) ) where λ is the coupling strength, N is the occupation cutoff, | Ω | is the volume of the spatial lattice, M is the mass of the particles and ϵ is the uncertainty in the energy calculation used for the S -matrix determination. Qubitization in the field basis scales as O ( | Ω | 2 ( k 2 Λ + k M 2 ) / ϵ ) , where k is the cutoff in the field and Λ is a scaled coupling constant. We find in both cases that the bounds suggest physically meaningful simulations can be performed using on the order of 4 × 10 6 physical qubits and 10 12 T -gates which corresponds to roughly one day on a superconducting quantum computer with surface code and a cycle time of 100 ns. This places the simulation of scalar field theory within striking distance of the gate counts for the best available chemistry simulation results.
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Two Madden–Julian oscillation (MJO) episodes observed during the 2011 Atmospheric Radiation Measurement Program MJO Investigation Experiment (AMIE)/DYNAMO field campaign are simulated using a regional model with various cumulus parameterizations, a regional cloud-permitting model, and a global variable-resolution model with a high-resolution region centered over the tropical Indian Ocean. Model biases in relationships relevant to existing instability theories of MJO are examined and their relative contributions to the overall model errors are quantified using a linear statistical model. The model simulations capture the observed approximately log-linear relationship between moisture saturation fraction and precipitation, but precipitation associated with the given saturation fraction is overestimated especially at low saturation fraction values. This bias is a major contributor to the excessive precipitation during the suppressed phase of MJO. After accounting for this bias using a linear statistical model, the spatial and temporal structures of the model-simulated MJO episodes are much improved, and what remains of the biases is strongly correlated with biases in saturation fraction. The excess precipitation bias during the suppressed phase of the MJO episodes is accompanied by excessive column-integrated radiative forcing and surface evaporation. A large portion of the bias in evaporation is related to biases in wind speed, which are correlated with those of precipitation. Furthermore, these findings suggest that the precipitation bias sustains itself at least partly by cloud radiative feedbacks and convection–surface wind interactions.
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The Si technology with the highest conversion efficiency is a-Si/c-Si heterojunction (HJ) PV. Its market penetration, however, is slowed by reports that fielded HJ modules degraded at twice the rate of regular c-Si modules. Our very recent work confirmed this degradation and attributed it to enhanced recombination at the a-Si/c-Si interface, caused by the slow, order-of-magnitude increase of the defect density. We propose to comprehensively explore degradation mechanisms in Si HJ cells by combining simulations and experiments. Theoretically, we will: (1) simulate structure of a-Si and a-Si/c-Si interfaces, identify defects; (2) determine statistics of energy barriers that control defect formation; (3) compute growth of defect density from the barrier distribution, and the resulting degradation of Voc. Experimentally, we will: (1) create a series of HJ-cell-representative stacks with varying layer thicknesses and deposition conditions by using PECVD tools; (2) use temperature and injection-dependent lifetime spectroscopy to determine effective lifetimes; (3) deconvolve the data to separate bulk and interface effects, and the effects of charge density and interface defects to analyze long time degradation. The goal is to identify material and device degradation mechanisms, to develop mitigation strategies for improved stability, such as the introduction of capping layers and hydrogen diffusion control.
Magnetic fields are known to affect the evolution of conducting fluids via the J× B force, where J is the current density and B is the magnetic field. Typically, J× B in high energy density plasmas (HEDP) systems is considered small compared to the plasma pressure gradients. However, many experiments lie in a part of the parameter space where the plasma is indirectly affected via magnetization of the heat flux and charged particle transport. This is true even for initially unmagnetized plasmas, since misaligned density and temperature gradients can self-generate the so-called Biermann magnetic fields.
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