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At least 361 records · Page 20

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.

36 MATERIALS SCIENCE↗

Multijunction Electroluminescent Cooling

We propose a multijunction configuration for an electroluminescent cooling system, incorporating multiple semiconductor layers with different band gaps. Through theoretical analysis focusing on cooling power density and coefficient of performance, we show that increasing the number of semiconductor layers results in an enhanced performance of electroluminescent cooling. We highlight the reduction of operating voltage as a pivotal factor contributing to this improvement. Furthermore, we show that the enhancement can persist in the presence of nonradiative recombination. Our work indicates the potential of multijunction configurations in advancing the capabilities of electroluminescent cooling. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

Surface /catalytic/ reactions on upper atmospheric aerosols

Highly reactive minor species and aerosol layers are present together at times in certain regions of the upper atmosphere. It is suggested that this interplay may lead to surface reactions that could affect the local photochemical balance. A simple model of the surface recombination of atomic oxygen at the mesopause, incorporating rough estimates of aerosol concentrations, is used to estimate the importance of this effect. Surface recombination does appear to be significant in comparison with gas phase recombination for atomic oxygen; however, major uncertainties remain in the model.

Olivero, J. J.↗

20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction

Bandgap gradient is a proven approach for improving the open-circuit voltages (V OC s) in Cu(In,Ga)Se 2 and Cu(Zn,Sn)Se 2 thin-film solar cells, but has not been realized in Cd(Se,Te) thin-film solar cells, a leading thin-film solar cell technology in the photovoltaic market. Here, we demonstrate the realization of a bandgap gradient in Cd(Se,Te) thin-film solar cells by introducing a Cd(O,S,Se,Te) region with the same crystal structure of the absorber near the front junction. The formation of such a region is enabled by incorporating oxygenated CdS and CdSe layers. We show that the introduction of the bandgap gradient reduces the hole density in the front junction region and introduces a small spike in the band alignment between this and the absorber regions, effectively suppressing the nonradiative recombination therein and leading to improved VOCs in Cd(Se,Te) solar cells using commercial SnO 2 buffers. A champion device achieves an efficiency of 20.03% with a V OC of 0.863 V.

14 SOLAR ENERGY↗

Optoelectronic property comparison for isostructural Cu 2 BaGeSe 4 and Cu 2 BaSnS 4 solar absorbers

To target mitigation of anti-site defect formation in Cu 2 ZnSnS 4–x Se x , a new class of chalcogenides, for which Ba or Sr (group 2) replace Zn (group 12), has recently been introduced for prospective solar absorber application. Cu 2 BaGeSe 4 (CBGSe) and Cu 2 BaSnS 4 (CBTS) are two such compounds, which share a common trigonal crystal structure (P3 1 space group) and similar quasi-direct band gap (~2 eV). While CBTS-based films have already been studied, there are no reports yet on films and solar cells based on related CBGSe. To identify key differences and similarities in the electronic properties between these two materials, electronic characteristics (e.g., carrier concentration, mobility, electron affinity, defect levels, recombination, and charge carrier kinetics) of vacuum-deposited CBGSe and CBTS films are compared using a variety of characterization methods. Hall effect measurements reveal that CBGSe films have relatively higher hole carrier concentration and lower mobility (3 × 10 15 cm –3 , 0.6 cm 2 V –1 s –1 ) compared to CBTS (5 × 10 12 cm –3 , 3.5 cm 2 V –1 s –1 ). Photoelectron spectroscopy yields low electron affinity values for both CBGSe (3.7 eV) and CBTS (3.3 eV), pointing to the necessity of pursuing low electron affinity buffer materials for both types of absorbers. At low temperatures, CBGSe films show free-exciton photoluminescence, as well as pronounced deep-level emission at ~1.4 eV, while CBTS films exhibit a strong bound-exciton signal with noticeably less intense deep-level emission than for CBGSe. Charge carrier kinetics, transport, and recombination properties of both types of films are also analyzed using optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity. The first CBGSe prototype solar cells (using chemical bath deposited CdS as a buffer layer) show a maximum of 1.5% efficiency with ~0.62 V open-circuit voltage. Furthermore, the measured properties point to possible limiting factors for CBGSe and related films for PV and optoelectronics and provide insights on possible approaches for improvement within this multinary chalcogenide family.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhancement of Optical Efficiency of CSP Mirrors for Reducing O&M Cost via Near-Continuous Operation of Self-Cleaning Electrodynamic Screens (EDS). Final Report

Over the past decade, techno-economical advancements in solar energy systems, particularly the improvement in the conversion efficiency of PV modules made with mono-crystalline silicon solar cells from 12% to 20%, as well as the cost reduction in manufacturing by a factor of about 10%, have made it possible to achieve a levelized cost of electricity (LCOE) in PV plants that is comparable to, or less than, the cost of deriving electricity from fossil fuels. Operating PV plants in mid-latitude sun-belt regions, where the solar irradiance level is highest, provides a high annual energy-yield (kWh/kWp) due to two factors: (1) the availability of predictable high solar irradiance throughout the year with the fewest interruptions in solar flux from clouds and rain, and (2) the increased conversion efficiency of crystalline solar cells, as recombination loss has decreased with increased intensity of the sunlight that illuminates the silicon solar cells. Semi-arid and desert regions, however, are plagued by high atmospheric dust concentrations and frequent sand storms. The deposition of a layer of dust on the optical surfaces of solar collectors such as PV modules and concentrating mirrors reduces the transmission efficiency of sunlight that actually reaches the solar cells or receivers, resulting in high energy-yield soiling loss. There are two major cost components to operating a solar plant: (1) installation costs, and (2) operation-and-maintenance (O&M) costs. There is no fuel cost; hence operating a solar plant in a semi-arid or desert region provides high returns on investment if soiling losses are mitigated via efficient cleaning methods and optimized cleaning frequency. If solar collectors are not cleaned, the accumulation of dust layers on solar collectors may cause the operation of such plants in arid regions to become economically unviable. Washing solar collectors with water and detergent, as is most commonly done now, is an efficient method for cleaning. The conventional approach in utility-scale solar plants is to use a large truck with a water tank and pump system for spraying deionized water on the surface of the solar collectors. Robotic cleaning with brushes, used for many solar plants, requires lesser water for cleaning. The water consumed using semi-automated cleaning of PV modules in utility-scale solar plants is approximately 2 liters/m 2 per cleaning cycle. The total optical surface area of the solar collectors in 1 TW-scale solar installation will be more than 3 × 109 m 2 ; hence an enormous amount of water be needed for cleaning. There simply is not enough fresh water in the sun-belt areas of the world for predicted cleaning needs. In solar power plants, the estimated cost of cleaning solar collectors includes expenses related to the equipment used, labor, cost of transportation of water, the energy required for cleaning, plus ancillary costs whereas the cost of water is not considered. The water used is obtained from sources located close to plant sites, unmindful of the environmental and societal impact as the power plants are oftentimes located in regions that face severe drought. This practice is very similar to the cost calculations in deriving the levelized cost of electricity (LCOE) in conventional power plants based on burning fossil fuel such as coal and gas, while disregarding the cost of climate change and health effects. Unless a water-free or low-water cleaning method is established, the expansion of solar plants may lose public support in areas suffering long intervals of drought. The goal of this research project has been the development and application of the Electrodynamic Screen (EDS) as a means for a water-free, scalable cleaning process applicable to solar-power installations, including rooftop applications. We describe here the development of an EDS film-based cleaning process as an emerging method for use on PV modules, parabolic troughs, and heliostats. This report aims to show the feasibility of integrating or retrofitting EDS films onto the optical surfaces of solar collectors (both PV and CSP) while maintaining high transmission or reflection efficiency. The cleaning action provided by the EDS film is an active method to remove dust deposits by electrodynamic force. Current lab-scale prototype EDS films, retrofitted onto solar panels and mirrors, have shown to be capable of maintaining optical transmission or specular-reflection efficiencies higher than 90% of initial values under clean conditions. The optical surfaces of solar collectors laminated with EDS films can remove more than 90% of deposited dust when the EDS is activated for less than two minutes. As an electrodynamic dust removal process, the EDS film-based method is designed primarily for the removal of dust in solar installations located in semi-arid and desert areas, where the atmosphere is often dry and dusty and rainfall is infrequent. While EDS film application minimizes water consumption and facilitates cleaning as frequently as needed, it has limitations in removing contaminants such as soot, organic pollutants deposited as fine films on the surface, and bird droppings. The dust removal efficiency of the EDS is maximum at relative humidity RH is 40 to 50% and decreases at when RH > 65%. Many solar plant sites undergo diurnal and seasonal cycles of high ambient, early afternoon temperatures and an RH that reaches the dew point early in the morning. These variations in atmospheric conditions do not limit the operation of the EDS film. This report presents a brief review of the progress and the potential of EDS film technology for mitigating the impact of dust on solar collectors via water-free cleaning, as well as current technical challenges regarding efficiency and durability. Our experimental data on the performance of EDS films show that: (1) the dust-removal efficiency (DRE) can reach levels higher than 90%, (2) the specular reflectivity (SR) of EDS film-laminated second-surface mirrors reach levels in excess of 90%, (3) the specular reflectivity restoration (SRR) can exceed 90%, (4) the output-power restoration (OPR) of PV modules can exceed 95%, and (5) the optical transmission efficiency (TE) of the EDS films can be greater than 90%. Working with Sandia National Laboratories (NM), Corning Research and Development Corporation (NY), Eastman Kodak (NY), Tomark-Worthen Industries (NH), and EDS Chile SPA (Chile), we have produced EDS film-laminated PV modules and demonstrated their self-cleaning functions without requiring water. We have demonstrated that the operational range of EDS films will cover the expected ambient temperature of solar fields at RH cycling varying from 20 to 95% as long as the EDS films are activated in the RH range 20 to 50%. (Typical solar-field climates in deserts and semi-arid lands often reach near dew point in coastal areas.) Our experiments on the application of hydrophobic-fluorinated nanoparticle coatings on EDS film surfaces show that the EDS operational range can be extended to higher RH levels that approach the dew point. At Eastman Kodak, as one of our industrial partners, we were able to establish a process for manufacturing EDS films using flexographic printing of the electrodes onto transparent polymer films. This process utilizes an existing manufacturing line at Eastman Kodak that allows fabrication of medium-scale EDS films (26 cm × 30 cm). The manufacturing process has the capacity to produce EDS films at high production speeds. The medium-scale EDS films that have been printed at Kodak were evaluated in the lab at Boston University. The EDS films produced at Kodak were laminated at Tomark-Worthen using an industrial scale vacuum laminator to produce EDS film stacks, which can be affixed onto the optical surfaces of PV modules or concentrating mirrors. The EDS film stack consists of the EDS films that have Willow® Glass (WG) which has a thickness of 100 μm as the front surface. The WG sheets obtained from Corning Research and Development Corporation are customized in size and shape to cover the active area of the EDS films. The back surface of the EDS film stack is integrated onto the optical surface of the solar panel or mirror using optically clear adhesive (OCA) films or silicone adhesives. The OCA films (thickness 25 μm) are produced by 3M. The EDS film stacks have the architecture: WG/OCA/EDS Film/OCA/ over PV module or solar mirror. The power-supply units needed for activating the electrodes of the EDS film were designed and produced at Boston University. These power supply units provide three-phase, 1.2 kV voltage pulses at a very low current (micro-ampere) level and at a low frequency (≈ 5 Hz). The voltage pulses are applied to the electrodes in a sequence such that the train of pulses resembles a unidirectional traveling wave of electrical field on the surface of the EDS film. The dust particles on the surface become charged electrostatically and are levitated by the Coulomb force. The lateral sweeping action of the traveling electric field created by the three-phase voltages pulses then sweeps the dust off the surface. The energy consumed by the EDS electrodes is less than 0.2 Wh/m 2 /cleaning cycle, enabling energy-efficient restoration of output power (OPR) of PV module or specular reflectivity restoration (SRR) for solar mirrors. The EDS system consists of (1) an EDS film stack laminated onto the solar collectors, (2) connection of the EDS film to its power supply unit and (3) Interconnection of the power supply to PV modules or solar mirrors. Design, construction and assessment of field-testing units that have EDS stack laminated PV modules for evaluating the performance of the EDS films in solar fields is being carried out at BU. Our progress under this project, aimed at the advancement of EDS film technology, has reached DOE Technology Readiness Level (TRL) 6. Based on the extensive laboratory evaluations and limited field trials, as well as contacts with potential users, we believe that the technology has reached its commercial stage. We are conducting a cost analysis using the National Renewable Energy Laboratory (NREL) System Advisory Model (SAM) and are preparing for field trials of EDS films in different solar fields in the US, Chile, India and in the Middle East. A brief description of EDS film performance, construction and testing of the field-test unit, autonomous operation of the field-test unit for evaluating EDS performance in increasing energy yield, associated revenue savings, and water conservation is presented.

14 SOLAR ENERGY↗

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in situ and ex situ 63 MeV proton irradiation

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in situ and ex situ 63 MeV proton irradiation to assess their generation and recombination dynamics. Pre-irradiation, the n-type InAs absorbing region, exhibits a steadily increasing minority carrier lifetime with increasing temperature, providing evidence that excited minority carriers may be recombining via shallow defect levels. From deep-level transient spectroscopy, two features are found between 10 and 275 K: a low temperature broad “shoulder,” which suggests emission from multiple shallow electron defect levels with energies <29 meV and a high temperature minimum occurring at ∼230 K with an activation energy of 539 meV, which suggests a defect in the barrier layer in the device. Two similar nBn detectors are then subjected to 63 MeV proton irradiation in step doses and measured between steps. One experiment is performed in situ with an nBn held at ∼10 K during dosing, and the other experiment is performed ex situ with a similar nBn held at room temperature for dosing. The ex situ dosing results in an evaluation of the defect introduction rate that is three to four times lower than in situ due to partial annealing of the proton-induced displacement damage at room temperature. The results of these two experiments are then compared with the dose-dependent recombination rate analysis, resulting in an estimated recombination defect cross section of 1.6 × 10 −13 cm 2 for the shallow shoulder defect.

Carrasco, Rigo A. [Air Force Research Laboratory (↗

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗

Understanding the Role of Order in Y‐Series Non‐Fullerene Solar Cells to Realize High Open‐Circuit Voltages

Abstract Non‐fullerene acceptors (NFAs) as used in state‐of‐the‐art organic solar cells feature highly crystalline layers that go along with low energetic disorder. Here, the crucial role of energetic disorder in blends of the donor polymer PM6 with two Y‐series NFAs, Y6, and N4 is studied. By performing temperature‐dependent charge transport and recombination studies, a consistent picture of the shape of the density of state distributions for free charges in the two blends is developed, allowing an analytical description of the dependence of the open‐circuit voltage V OC on temperature and illumination intensity. Disorder is found to influence the value of the V OC at room temperature, but also its progression with temperature. Here, the PM6:Y6 blend benefits substantially from its narrower state distributions. The analysis also shows that the energy of the equilibrated free charge population is well below the energy of the NFA singlet excitons for both blends and possibly below the energy of the populated charge transfer manifold, indicating a down‐hill driving force for free charge formation. It is concluded that energetic disorder of charge‐separated states has to be considered in the analysis of the photovoltaic properties, even for the more ordered PM6:Y6 blend.

36 MATERIALS SCIENCE↗

Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance

Here, in monocrystalline Si (c-Si) solar cells, identification and mitigation of bulk defects are crucial to achieving a high photoconversion efficiency. To spectroscopically detect defects in the c-Si bulk, it is desirable to passivate the surface defects. Passivation of the c-Si surface with dielectrics such as Al 2 O 3 and SiNx requires deposition at elevated temperatures, which can influence defects in the bulk. Herein, we report on the passivation of different Czochralski (Cz) Si wafer surfaces by an organic copolymer, Nafion. We test the efficacy of the surface passivation at temperatures ranging from 6 to 473 K to detect bulk defects using electron paramagnetic resonance (EPR) spectroscopy. By comparing with state-of-the-art passivation layers, including Al 2 O 3 and liquid HF/HCl, we found that at room temperature, Nafion can provide comparable passivation of n-type Cz Si with an implied open-circuit voltage (iV oc ) of 713 mV and a recombination current prefactor J o of 5 fA/cm 2 . For p-type Cz Si, we obtained an iV oc of 682 mV with a J o of 22.4 fA/cm 2 . Scanning electron microscopy and photoluminescence reveal that Nafion can also be used to passivate the surface of c-Si solar cell fragments scribed from a solar cell module by using a laser. Consistent with previous studies, analysis of the EPR spectroscopy data confirms that the H-terminated surface is necessary, and fixed negative charge in Nafion is responsible for the field-effect passivation. While the surface passivation quality was maintained for almost 24 h, which is sufficient for spectroscopic measurements, the passivation degraded over longer durations, which can be attributed to surface SiO x growth. These results show that Nafion is a promising room-temperature surface passivation technique to study bulk defects in c-Si.

14 SOLAR ENERGY↗

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗

Nafion Passivation of c-Si Surface and Edge for Electron Paramagnetic Resonance

Effective surface passivation of crystalline silicon (c-Si) surface by reducing the carrier recombination rate has led to modern c-Si solar cells with efficiencies > 25% in both laboratory and industrial settings. Typical mainstream surface passivation techniques include high-temperature silicon oxide (SiOx), amorphous silicon (a-Si:H), hydrogen-rich silicon nitride (SiNx), and aluminum oxide (Al2O3) [1]. They have demonstrated excellent surface recombination velocity of < 1 cm/s owing to both chemical passivation (via the hydrogen saturation of Si dangling bonds at the c-Si surface), and field-effect passivation (via the band bending from the fixed charge of the dielectric layers). Recently, several groups have studied solution-based organic materials for c-Si passivation, including bis(trifluoromethane)sulfonimide (TFSI), polystyrenesulfonate, and Nafion [2, 3] via spin or dip coating. All films were processed at ambient room temperature, and a high lifetime of 12 ms, as well as a low saturation current density (J0) of 16 fA/cm2, have been demonstrated using Nafion passivation [2]. However, despite the air instability, Nafion has several advantages when introduced to PV applications: (a) Wafer quality can be measured at high throughput after several process stages. (b) It is compatible with PL mapping, compared to HF liquid passivation which cannot be performed in room ambient. (c) Nafion process is fast and poses fewer constraints on process complexity, and cleanness, compared to Al2O3 and a-Si:H passivation. (d) Nafion is the ideal room temperature passivation, which can be applied onto a small fragment of a degraded module to investigate microscopic mechanisms when studying degradation mechanisms. Edge passivation is needed for advanced characterization tests such as Electron Paramagnetic Resonance (EPR), Electrically Detected Magnetic Resonance (EDMR), Deep Level Transient Spectroscopy (DLTS), local cell current-voltage (J-V), and Suns-Voc. In such cases, the laser-damaged minicell edges will obscure the true degradation mechanisms, and Nafion can effectively passivate them without causing further degradation through elevated-temperature processes. In this contribution, we show the passivation results of Nafion on bare nCz and compare it with a Al2O3 witness. We highlight the importance of edge pre-treatment before Nafion to achieve good passivation. We show that Nafion can reach decent passivation without undergoing high-temperature processes. We also explore the temperature dependency of Nafion through photoluminescence (PL) study and demonstrate the application of Nafion under cryogenic temperature (~6 K) through EPR. Our results reveal that Nafion can reduce surface and edge Si dangling bonds at low temperatures. Thus, it can be used as an effective room temperature passivation technique for advanced characterization methods.

c-Si↗

An investigation of the ionospheric D region at sunrise

The growth over sunrise of the C and D layers of the ionosphere is investigated. The model which is analyzed includes the negative ion species O(-), O2(-), O3(-), O4(-), NO3(-), CO3(-), and CO4(-). Ionization sources due to galactic cosmic rays, precipitated electrons, ionization of NO by scattered Lyman alpha radiation, and the direct solar radiation ionization are also included. The photodetachment of most of the negative ions is discussed, as well as the time variation of these parameters. The time variations of the electron, negative ion, and positive ion densities are calculated over sunrise. From these data, the mesospheric C and D layer development is plotted. Several model parameters are varied until the best agreement with experimentally determined electron densities is obtained. The results are discussed in light of several atmospheric parameters including the O and NO concentrations and the electron-ion recombination coefficient.

Turco, R. P.↗

Metallic ions in the equatorial ionosphere.

Four positive ion composition measurements of the equatorial E region at Thumba, India, are presented. During the day, the major ions between 90 and 125 km are NO+ and O2+. The relative concentrations are similar to those observed at midlatitudes but exhibit unusual structural behavior with altitude. A metallic ion layer centered at 92 km is found to contain Mg+, Fe+, Ca+, K+, Al+, Na+, and possibly Si+ ions. The layer is explained in terms of a similarly shaped altitude distribution of neutral atoms that are photoionized and charge exchanged with NO+ and O2+. Three-body reactions form molecular metallic ions that are rapidly lost by dissociative ion-electron recombination.

Aikin, A. C.↗

Results of a flight experiment on the catalytic efficiency of the Space Shuttle heat shield

An experiment was performed on the second Space Shuttle flight to verify data from arc-heated wind-tunnel tests indicating that the thermal protection tiles used on the Shuttle's surface are noncatalytic to the recombination of dissociated air. The experiment indicates that the tiles are indeed noncatalytic, and explains the lower than expected temperatures observed in the first two Shuttle flights. The data are reasonably well predicted with computations, using a chemically reactive boundary-layer code. The experimental setup and the computational analysis are described.

Rakich, J. V.↗

Numerical solution of wave equations for the stability of the inner cometo-sheath

Numerical solution of the MHD wave equations for stability of the cometary sheath determined by the balance between the inward Lorentz body force and the outward ion-neutral drag force is obtained by using a two-point boundary value method. The eigenvalues and the eigenfunctions are obtained numerically by treating the cometary inner sheath as a layer of finite thickness, bounded by the contact surface, i.e., the diamagnetic cavity boundary. The magnetic field structure discovered in the ionosphere of Comets Halley and Giacobini-Zinner is found to be unstable. The effects of finite plasma pressure, dissociative recombination, and mass loading due to photoionization are found to be stabilizing but are unable to quench the instability completely. It is also found that the higher the neutral production rate the lesser is the growth rate for the instability.

Srivastava, Krishna M.↗

Facile Fabrication of Self‐Assembly Functionalized Polythiophene Hole Transporting Layer for High Performance Perovskite Solar Cells

Abstract Crystallinity and crystal orientation have a predominant impact on a materials’ semiconducting properties, thus it is essential to manipulate the microstructure arrangements for desired semiconducting device performance. Here, ultra‐uniform hole‐transporting material (HTM) by self‐assembling COOH‐functionalized P3HT (P3HT‐COOH) is fabricated, on which near single crystal quality perovskite thin film can be grown. In particular, the self‐assembly approach facilitates the P3HT‐COOH molecules to form an ordered and homogeneous monolayer on top of the indium tin oxide (ITO) electrode facilitate the perovskite crystalline film growth with high quality and preferred orientations. After detailed spectroscopy and device characterizations, it is found that the carboxylic acid anchoring groups can down‐shift the work function and passivate the ITO surface, retarding the interface carrier recombination. As a result, the device made with the self‐assembled HTM show high open‐circuit voltage over 1.10 V and extend the lifetime over 4,300 h when storing at 30% relative humidity. Moreover, the cell works efficiently under much reduced light power, making it useful as power source under dim‐light conditions. The demonstration suggests a new facile way of fabricating monolayer HTM for high efficiency perovskite devices, as well as the interconnecting layer needed for tandem cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Co‐Doping Approach for Enhanced Electron Extraction to TiO 2 for Stable Inorganic Perovskite Solar Cells

Inorganic perovskite CsPbI 3 solar cells hold great potential for improving the operational stability of perovskite photovoltaics. However, electron extraction is limited by the low conductivity of TiO 2 , representing a bottleneck for achieving stable performance. In this study, a co‐doping strategy for TiO 2 using Nb(V) and Sn(IV), which reduces the material's work function by 80 meV compared to Nb(V) mono‐doped TiO 2 , is introduced. To gain fundamental understanding of the processes at the interfaces between the perovskite and charge‐selective layer, transient surface photovoltage measurements are applied, revealing the beneficial effect of the energetic and structural modification on electron extraction across the CsPbI 3 /TiO 2 interface. Using 2D drift‐diffusion simulations, it is found that co‐doping reduces the interface hole recombination velocity by two orders of magnitude, increasing the concentration of extracted electrons by 20%. When integrated into n–i–p solar cells, co‐doped TiO 2 enhances the projected T S80 lifetimes under continuous AM1.5G illumination by a factor of 25 compared to mono‐doped TiO 2 . This study provides fundamental insights into interfacial charge extraction and its correlation with operational stability of perovskite solar cells, offering potential applications for other charge‐selective contacts.

14 SOLAR ENERGY↗