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The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure is experimentally investigated.
The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.
No abstract available
To determine the influence of fiber types on creep durability, 3D SiC/SiC CMCs were fabricated with Sylramic-iBN, super Sylramic-iBN and Hi-Nicalon-S fibers and the composite specimens were then tested under isothermal tensile creep at 14820C at 69, 103 and 138 MPa for up to 300hrs in air. The failed specimens were examined by scanning electron microscopy (SEM) and computed tomography (CT) for fracture mode analysis. The creep data of these composites are compared with those of other SiC/SiC composites in the literature. The results of this study will be presented.
The purpose of this document is two-fold. First, the document lists and discusses many of the issues important to understand when testing power MOSFETs. Second, the recommended approach for using radiation test data to define the device application requirements is presented. These include SEE rate calculation, data analysis, and derating guidelines. A significant amount of work has been done on the basic effects of SEB and SEGR. References are supplied where seminal work has been done on the topic at hand. The reader is urged to review the references if the testing issues or mission application at hand are complex.
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TMS 2021 Annual Meeting & Exhibition, Virtual, March 15-18, 2021