Development of glass passivation method for semiconductor devices for Saturn system Quarterly progress report, 28 Jun. - 28 Sep. 1966
Techniques and properties of glass passivation for semiconductor devices for Saturn system
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Techniques and properties of glass passivation for semiconductor devices for Saturn system
Quantum theory of thermogalvanomagnetic phenomena in metals and semiconductors
Quantum theory of thermogalvanomagnetic phenomena in metals and semiconductors - heat flux and space density
Quantum theory of thermogalvanomagnetic phenomena in metals and semiconductors - heat density and electric currents
Charge carrier mobility in organic semiconductors, described using molecular orbital theory
Material, design, and manufacturing studies to improve glass passivation of semiconductor devices
Si semiconductor strain sensors and miniature pressure transducers for cryogenic pressure measurements
Fluctuations and broadening of energy-loss spectrum of charged particles passing through semiconductor detectors
Monograph on high power semiconductor-magnetic pulse generators, noting saturable inductors and silicon controlled rectifiers, circuit analysis, voltage regulator, etc
Silicon semiconductor combustion pressure transducer for high temperature HF pressure measurements within liquid rocket motor chambers
Recombination-regeneration formula for hole- electron pairs in randomly doped semiconductor materials
Kronig-Penney model for electron potential in crystal adapted to semiconductor, discussing cubic lattice
Si semiconductor strain gauge thermal coefficient of resistance /TCR/ reduction by high energy electron irradiation
Two-frequency operation of an 850 nm semiconductor optical amplifier was achieved by simultaneously injection seeding it with two diode lasers. The two frequencies could be independently amplified without strong interference when they were separated by more than 10 GHz, and the spectral purity was preserved by the amplification process. At frequency differences below 10 GHz, unbalanced two-frequency output was observed, which can be explained by a two-mode interaction driven by the refractive index modulation at the beat frequency. The laser system is suitable for the difference-frequency generation of coherent terahertz radiation in ultra-fast photoconductors or nonlinear optical media.
The development of mid-IR III-V semiconductor diode lasers is briefly reviewed. Particularly, the recent progress and current status of Sb-based type-II interband cascade lasers are presented.
Balistic-electron-emission microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport.
Key issues are discussed that must be overcome in order to apply commercial semiconductor technologies in space, emphasizing ways to test and qualify devices so they meet radiation hardness requirements.
This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems.