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At least 361 records · Page 20

Making Single Crystals of B4C

Crystals precipitate from solution in copper. Well-defined single crystals of boron carbide (B4C) grown by slowly cooling melts containing B4C and copper. Forms on surface and in interior of melt.

Feigelson, Robert S.↗

Friction and wear behavior of single-crystal silicon carbide in contact with titanium

Sliding friction experiments were conducted with single crystal silicon carbide in sliding contact with titanium. Results indicate that the friction coefficient is greater in vacuum than in argon and that this is due to the greater adhesion or adhesive transfer in vacuum. Thin films of silicon carbide transferred to titanium also adhered to silicon carbide both in argon at atmospheric pressure and in high vacuum. Cohesive bonds fractured on both the silicon carbide and titanium surfaces. The wear debris of silicon carbide created by fracture plowed the silicon carbide surface in a plastic manner. The friction characteristics of titanium in contact with silicon carbide were sensitive to the surface roughness of silicon carbide, and the friction coefficients were higher for a rough surface of silicon carbide than for a smooth one. The difference in friction results was due to plastic deformation (plowing of titanium).

Miyoshi, K.↗

The influence of cobalt, tantalum, and tungsten on the microstructure of single crystal nickel-base superalloys

The influence of composition on the microstructure of single crystal nickel-base superalloys was investigated. Co was replaced by Ni, and Ta was replaced by either Ni or W, according to a matrix of compositions based on MAR-M247. Substitution of Ni for Co caused an increase in gamma-prime solvus temperature, an increase in gamma-gamma-prime lattice mismatch, and the precipitation of W-rich phases in the alloys with high refractory metal levels. Substitution of Ni for Ta caused large decreases in gamma-prime solvus temperature, gamma-prime volume fraction, and gamma-gamma-prime lattice mismatch, whereas substitution of W for Ta resulted in smaller decreases in these features. For the alloys with gamma-prime particles that remained coherent, substitution of Ni for Co caused an increase in gamma-prime coarsening rate. The two alloys with the largest magnitude of lattice mismatch possessed gamma-prime particles which lost coherency during unstressed aging and exhibited anomalously low coarsening rates. Creep exposure at 1000 C resulted in the formation of gamma-prime lamellae oriented perpendicular to the applied stress axis in all alloys.

Nathal, M. V.↗

The effect of oxygen pressure on volatility and morphology of LaB6 single crystal cathodes

The effect of oxygen pressure on the volatility and morphology of single crystal LaB6 cathodes, heated to different temperatures, was investigated. At a temperature of 1600 K, an increase of oxygen pressure from 1 x 10 to the -8th torr to 1 x 10 to the -6th torr has led to a 100-fold enhancement in cathode volatility. The enhancement effect of oxygen pressure diminished with increasing temperature: at a cathode operating temperature of 1900 K, the volatility enhancement due to the same oxygen pressure was negligible. It was shown that the faceting frequently observed during evaporation of conically shaped emitters is due to a crystallograpic anisotropy of the oxidation rate of LaB6. No facet formation occurs during evaporation at oxygen pressures below -110 to the -8th torr.

Davis, P. R.↗

The effect of hydrogen on deformation substructure, flow and fracture in a nickel-base single crystal superalloy

The room temperature flow and fracture of a nickel-base single crystal gamma/gamma-/prime superalloy in the presence and absence of hydrogen is explored. The procedure of hydrogen-charging employed in this study provides a very high and uniform hydrogen concentration of the order of 5000 at.-ppm in the material. It is shown that the most compelling hydrogen-induced changes in deformation behavior are enhanced dislocation accumulation in the gamma matrix and extensive cross-slip of super-dislocations. The explanation of these changes is proposed. Both effects contribute to the increase of flow stress and the notable work hardening that occurs prior to fracture. Hydrogen enhanced strain localization in the gamma matrix leads to the dramatic loss of ductility and premature cracking, which manifests as failure macroscopically parallel to the 100-plane-oriented faces of gamma-prime precipitates. On the microscale, cracking, while limited to the gamma matrix, occurs parallel to multiple 111-plane-oriented slip systems.

Dollar, M.↗

Lower critical field measurements in YBa2Cu3O(6+x) single crystals

The temperature dependence of the lower critical field in YBa2Cu3O(6+x) single crystals was determined by magnetization measurements with the applied field parallel and perpendicular to the c-axis. Results are compared with data from the literature and fitted to Ginzberg-Landau equations by assuming a linear dependence of the parameter kappa on temperature. A value of 7 plus or minus 2 kOe was estimated for the thermodynamic critical field at T = O by comparison of calculated H (sub c2) values with experimental data from the literature.

Kaiser, D. L.↗

Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si

Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.

Fathauer, Robert W.↗

Application of Single Crystal Failure Criteria: Theory and Turbine Blade Case Study

The orientation of the single crystal material within a structural component is known to affect the strength and life of the part. The first stage blade of the High Pressure Fuel Turbopump (HPFTP)/ Alternative Turbopump Development (ATD), of the Space Shuttle Main Engine (SSME) was used to study the effects of secondary axis'orientation angles on the failure rate of the blade. A new failure criterion was developed based on normal and shear strains on the primary crystallographic planes. The criterion was verified using low cycle fatigue (LCF) specimen data and a finite element model of the test specimens. The criterion was then used to study ATD/HPFTP first stage blade failure events. A detailed ANSYS finite element model of the blade was used to calculate the failure parameter for the different crystallographic orientations. A total of 297 cases were run to cover a wide range of acceptable orientations within the blade. Those orientations are related to the base crystallographic coordinate system that was created in the ANSYS finite element model. Contour plots of the criterion as a function of orientation for the blade tip and attachment were obtained. Results of the analysis revealed a 40% increase in the failure parameter due to changing of the primary and secondary axes of material orientations. A comparison between failure criterion predictions and actual engine test data was then conducted. The engine test data comes from two ATD/HPFTP builds (units F3- 4B and F6-5D), which were ground tested on the SSME at the Stennis Space Center in Mississippi. Both units experienced cracking of the airfoil tips in multiple blades, but only a few cracks grew all the way across the wall of the hollow core airfoil.

Sayyah, Tarek↗

Float-Zone Growth of Gel-xSix (x ? 10 at .%) Single Crystals: Influence of Thermocapillary and Solutocapillary Convection

Gel-xSix (x ? 10 at.%) single crystals have been grown with the float-zone technique applied within a monoellipsoid mirror furnace. The feed crystal consisted of synthesized GeO.95siO.05 polycrystalline material. Two Boron-doped (much much more than 1-2 (raised dot) 1017 at/cm3) crystals were grown under identical conditions using <100> Ge seeds. One Ge:Ga-doped (much much more than 1018 at/cm3) reference crystal was also grown in the same furnace. Compositional profiles were measured with an energy dispersive analysis by X-ray (EDAX). The maximum silicon concentration attained was 10 at.%. Micrographs of the etched crystals show sharp changes in interface curvature at the crystal edges. These are considered to be caused by solutal Marangoni convection, whose strength is assumed to be a direct function of silicon concentration, Theoretical considerations show that the flow direction, velocity, and strength varies significantly from a solutal Marangoni convection regime directly in front of the solid-liquid interface to a thermal Marangoni convection regime within the bulk melt.

Campbell, Tom A.↗

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Park, Yeonjoon↗