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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Optical absorption of carbon and hydrocarbon species from shock heated acetylene and methane in the 135-220 nm wavelength range

Absorption spectroscopy of carbon and hydrocarbon species has been performed in a shock tube at an incident shock condition for a wavelength range of 135-220 nm, in order to obtain information needed for calculating radiation blockage ahead of a planetary probe. Instrumentation consisted of high frequency response pressure transducers, thin-film heat transfer gages, or photomultipliers coupled by light pipes. Two test-gas mixtures, one with acetylene and the other with methane, both diluted with argon, were used to provide a reliable variation of C3 and C2H concentration ratio. Comparison of tests results of the two mixtures, in the temperature range of 3750 + or - 100 K, showed the main absorbing species to be C3. The wavelength for maximum absorption agrees well with the theoretical values of 7.68 eV and 8.03 eV for the vertical excitation energy, and a value of 0.90 for the electronic oscillator strength, obtained from the measured absorption band, is also in good agreement with the predicted value of 0.92.

Shinn, J. L.↗
NASA NTRS1983

Striped Electrodes for Solid-Electrolyte Cells

Striped thick-film platinum electrodes help insure lower overall cell resistance by permitting free flow of gases in gaps between stripes. Thickfilm stripes are also easier to fabricate than porous thin-film electrodes that cover entire surface. Possible applications for improved cells include oxygen production from carbon dioxide, extraction of oxygen from air, small fluidic pumping, sewage treatment, and fuel cells.

Richter, R.↗
NASA NTRS1981

A wide-field soft X-ray camera

A wide-field soft X-ray camera (WFSXC) sensitive in the 50 to 250 eV band is described. The camera features Wolter-Schwarzschild optics with an 8 degree field of view and 300 cu cu collecting area. The focal plane instrument is a microchannel plate detector. Broad-band energy discrimination is provided by thin-film filters mounted immediately in front of the focal plane. The WFSXC is capable of detecting sources with intensities greater than 5 percent of HZ 43 during typical sounding rocket exposures, and it would approach the same sensitivity range as EUVE during a typical exposure from the Shuttle.

Petre, R.↗
NASA NTRS1982

Surface morphology of erbium silicide

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Lau, S. S.↗
NASA NTRS1981

Epitaxial thin film GaAs solar cells using OM-CVD techniques

A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

Stirn, R. J.↗
NASA NTRS1982

A study of aerodynamic heating distributions on a tip-fin controller installed on a Space Shuttle Orbiter model

The aerodynamic heating of a tip-fin controller mounted on a Space Shuttle Orbiter model was studied experimentally in the Calspan Advanced Technology Center 96 inch Hypersonic Shock Tunnel. A 0.0175 scale model was tested at Mach numbers from 10 to 17.5 at angles of attack typical of a shuttle entry. The study was conducted in two phases. In phase 1 testing a thermographic phosphor technique was used to qualitatively determine the areas of high heat-transfer rates. Based on the results of this phase, the model was instrumented with 40 thin-film resistance thermometers to obtain quantitative measurements of the aerodynamic heating. The results of the phase 2 testing indicate that the highest heating rates, which occur on the leading edge of the tip-fin controller, are very sensitive to angle of attack for alpha or = 30 deg. The shock wave from the leading edge of the orbiter wing impinges on the leading edge of the tip-fin controller resulting in peak values of h/h(Ref) in the range from 1.5 to 2.0. Away from the leading edge, the heat-transfer rates never exceed h/h(Ref) = 0.25 when the control surface, is not deflected. With the control surface deflected 20 deg, the heat-transfer rates had a maximum value of h/h(Ref) = 0.3. The heating rates are quite nonuniform over the outboard surface and are sensitive to angle of attack.

Wittliff, C. E.↗
NASA NTRS1983

Linear absorption coefficient of beryllium in the 50-300-A wavelength range

Transmittances of thin-film filters fabricated for an extreme-UV astronomy sounding-rocket experiment yield values for the linear absorption coefficient of beryllium in the 50-300-A wavelength range, in which previous measurements are sparse. The inferred values are consistent with the lowest data previously published and may have important consequences for extreme-UV astronomers.

Barstow, M. A.↗
NASA NTRS1983

Transparent conductive coatings

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Ashok, S.↗
NASA NTRS1984

Integrated optical signal processing with magnetostatic waves

Magneto-optical devices based on Bragg diffraction of light by magnetostatic waves (MSW's) offer the potential of large time-bandwidth optical signal processing at microwave frequencies of 1 to 20 GHz and higher. A thin-film integrated-optical configuration, with the interacting MSW and guided-optical wave both propagating in a common ferrite layer, is necessary to avoid shape-factor demagnetization effects. The underlying theory of the MSW-optical interaction is outlined, including the development of expressions for optical diffraction efficiency as a function of MSW power and other relevant parameters. Bradd diffraction of guided-optical waves by transversely-propagating magnetostatic waves and collinear TE/TM mode conversion included by MSW's have been demonstrated in yttrium iron garnet (YIG) thin films. Diffraction levels as large as 4% (7 mm interaction length) and a modulation dynamic range of approx 30 dB have been observed. Advantages of these MSW-based devices over the analogous acousto-optical devices include: much greater operating frequencies, tunability of the MSW dispersion relation by varying either the RF frequency or the applied bias magnetic field, simple broad-band MSW transducer structures (e.g., a single stripline), and the potential for very high diffraction efficiencies.

Fisher, A. D.↗
NASA NTRS1983

Coupling of radiation into thin film modes by means of localized plasma resonances

The interaction between the surface plasmon mode that propagates at a metal dielectric interface and the localized plasma resonances (LPR) is investigated experimentally in Ag-island films. A stair-stepped sample geometry comprising a glass substrate, a continuous 50-nm Ag film, an LiF spacer film of thickness d = 5-60 nm, and an Ag-island film of mass thickness 3 nm is used in near-normal-reflectivity and plasmon-propagation-constant (k) determinations. The results are presented graphically and discussed. The overall shape of the reflectivity curves is found to be characteristic of Ag films, but with a dip at about 400 nm (corresponding to the absorption resonance of the island film) which is most pronounced with d = 25 nm. It is inferred that the island resonances are strongly coupled to a continuous-film dissipative mechanism at this d value. This inference is supported by the fact that the variation in k, correctd for LiF effects and plotted as a function of d, is greatest at around d = 25 nm. The implications of this finding for broad-band coupling into a thin-film mode, LPR enhancement of waveguide nonlinear effects, and new surface-enhanced-Raman-scattering geometries are indicated.

Holland, W. R.↗
NASA NTRS1984

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W.

Nicolet, M. A.↗
NASA NTRS1984

Effect of surfactants and temperature on the hyperfiltration performance of poly(ether/urea) membranes

The individual and combined effects of pasteurization temperature (347 K) and surfactants (anionic, cationic, and neutral) on a poly(ether/urea) thin-film hyperfiltration membrane were studied. Performance of this positively charged membrane was measured in terms of sodium chloride rejection and water flux. The observed effect was mostly on water flux and minimal on salt rejection. Pasteurization temperature caused an irreversible flux decline (flux decline slope of 0.09). The gradual flux reduction caused by neutral and cationic surfactants was reversible, whereas the flux reduction caused by anionic surfactant was irreversible and of similar magnitude to flux reduction caused by pasteurization temperature. The effects of anionic surfactant and pasteurization temperature were additive. Because of flux decline at elevated temperatures the poly(ether/urea) membrane is not very attractive for long-term spaceflight use.

Leban, M. I.↗
NASA NTRS1984

The U.S. and Japanese amorphous silicon technology programs A comparison

The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

Shimada, K.↗
NASA NTRS1983

Thin film strain gage development program

Sputtered thin-film dynamic strain gages of 2 millimeter (0.08 in) gage length and 10 micrometer (0.0004 in) thickness were fabricated on turbojet engine blades and tested in a simulated compressor environment. Four designs were developed, two for service to 600 K (600 F) and two for service to 900 K (1200 F). The program included a detailed study of guidelines for formulating strain-gage alloys to achieve superior dynamic and static gage performance. The tests included gage factor, fatigue, temperature cycling, spin to 100,000 G, and erosion. Since the installations are 30 times thinner than conventional wire strain gage installations, and any alteration of the aerodynamic, thermal, or structural performance of the blade is correspondingly reduced, dynamic strain measurement accuracy higher than that attained with conventional gages is expected. The low profile and good adherence of the thin film elements is expected to result in improved durability over conventional gage elements in engine tests.

Grant, H. P.↗
NASA NTRS1990

Satellite material contaminant optical properties

The Air Force Wright Research and Development Center and the Arnold Engineering Development Center are continuing a program for measuring optical effects of satellite material outgassing products on cryo-optic surfaces. Presented here are infrared (4000 to 700 cm(-1)) transmittance data for contaminant films condensed on a 77 K geranium window. From the transmittance data, the contaminant film refractive and absorptive indices (n, k) were derived using an analytical thin-film interference model with a nonlinear least-squares algorithm. To date 19 materials have been studied with the optical contents determined for 13 of those. The materials include adhesives, paints, composites, films, and lubricants. This program is continuing and properties for other materials will be available in the future.

Wood, B. E.↗
NASA NTRS1983

Gallium arsenide single crystal solar cell structure and method of making

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Stirn, Richard J.↗
DOE OSTI2025

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

Goronzy, D. P. [Northwestern U.]↗
DOE OSTI2025

Formation trajectories of solution-processed perovskite thin films from mixed solvents

The engineering of mixed-solvent formulations and their evaporation conditions are key to reproducible perovskite coatings for high-performance photovoltaics. Here, we report a lumped-parameter evaporation model to predict the evolution of a perovskite ink liquid film over time (solvent ratio, solute concentration, and film thickness). The drying-rate model is validated via in situ film-thickness measurements, and the predicted transient liquid film state is mapped as a process path. These methods allow for the prediction of process sensitivity to local environmental factors and the understanding and visualization of a broader processing parameter space enabled through the coupling of process and ink engineering. Process maps are applied to create a new framework for scalable perovskite coating development with a goal of improving the reproducibility and transferability of perovskite fabrication. This approach is demonstrated with blade-coated FA 0.83 Cs 0.17 PbI 3 photovoltaic devices, improving the photovoltaic conversion efficiency from 17.5% ± 1.7% to 20.3% ± 0.6%.

14 SOLAR ENERGY↗