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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Isothermal Microcalorimetric Analysis of Li/CF x Battery Discharge

Lithium/carbon monofluoride (Li/CF x ) batteries generate substantial amounts of heat during discharge in part due to the large deviation of the loaded voltage from the measured and thermodynamically predicted open circuit voltage. Here, in this study, we further analyze this system by estimating the equilibrium voltage (V eq ) and its temperature dependence (dV eq /dT) over the entire discharge range. Based on these results, the ohmic and entropic heat contributions to the overall heat flow are calculated from experimental data. The ohmic heat flow is consistent with an electrochemical impedance spectroscopy model and electrode density measurements, indicating decreasing porosity of the electrode during discharge. Entropic heating increases during discharge as the cell reaction becomes increasingly entropically unfavorable. The total energy dissipated by the cell (electrical and thermal) remains similar over the entire discharge, evidence for a two-phase reaction with a constant, and rate-independent, ΔG rxn of about -465 kJ mol -1 . However, near the end of discharge (>90% DOD), ΔG rxn changes significantly indicating possible secondary reactions.

25 ENERGY STORAGE↗
DOE OSTI2024

Grid Parameters and Voltage Estimation Approach Integrating Data-Driven Converter Model

With Measurements of grid voltage and current are essential for the optimal operation of the grid protection and control (P&C) systems. Grid parameters vary through time during the faults and especially in the converter interfaced resources (CIRs) rich power grid, and thus accurate estimation is critical to avoid the mis-operation of the P&C systems. In this paper, a moving horizon estimation (MHE) as an observer is devised and applied to estimate the grid line parameters and grid voltages for protection enhancement. Due to the proprietary and confidentiality of CIRs, the proposed approach uses the black-box model to represent their dynamics. Leveraging the easily accessible measurements of output current from the black-box model of CIR and voltage at the point of common coupling, the proposed method estimates the grid impedance and grid voltage during normal and faulty operating conditions. The performance shows that the optimization-based observer was able to closely observe the accurate states and parameters, which can be utilized by the P&C systems.

Subedi, Sunil↗
DOE OSTI2022

Breakdown of the $v=1$ integer quantum Hall effect in the single particle and collective localization regimes

We report large signal current–voltage characteristics measurements near the $v=1$ integer quantum Hall plateau in a high mobility GaAs/AlGaAs sample that exhibits both single particle and collective localization. According to prior results, the central part of the $v=1$ plateau corresponds to single particle localization and hence an Anderson insulator. In contrast, the two regions in the flanks of this Anderson insulator were associated with collective localization and were identified with the integer quantum Hall Wigner solid. We find that, at low temperatures and under large bias currents, both the Anderson insulator and integer quantum Hall Wigner solid have a sharp onset of conduction above a threshold. Furthermore, this threshold shows an approximately monotonic dependence on the filling factor across the boundary between the two localized phases. Finally, to our surprise, we find that these large signal characteristics do not clearly distinguish between the Anderson insulator and the integer quantum Hall Wigner solid.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗
NASA NTRS2015

Evaluation of Case Size 0603 BME Ceramic Capacitors

High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

testing↗
DOE OSTI2026

Understanding Recombination Pathways of CdSeTe/CdTe Devices Using Temperature Dependence of Fill Factor

Understanding the temperature dependence of photovoltaic parameters is critical for identifying performance limiting mechanisms in CdTe-based solar cells. In this study, we investigate the temperature dependence of fill factor (FF(T)) in CdSeTe/CdTe solar cells using a combination of experimental current density-voltage (JV) measurements and numerical simulations. The measured FF(T) exhibits a nonlinear response with temperature, peaking at moderate temperature values (10–30°C). Through numerical modeling, we reveal that this peaking behavior in FF(T) arises when the dominant recombination mechanism transitions from bulk to interface with increasing temperature. This transition is primarily driven by low hole mobility (0.6–1.2 cm2/V·s), while electron mobility, interface recombination velocities, and carrier lifetime also contribute to the effect. Our findings demonstrate that FF(T) analysis is a promising diagnostic tool for distinguishing recombination pathways and guiding the optimization of thin-film CdTe solar cells under real-world conditions.

CdTe photovoltaics↗
DOE OSTI2023

A Quenched Disorder in the Quantum-Critical Superconductor CeCoIn 5

Emergent inhomogeneous electronic phases in metallic quantum systems are crucial for understanding high- T c superconductivity and other novel quantum states. In particular, spin droplets introduced by nonmagnetic dopants in quantum-critical superconductors (QCSs) can lead to a novel magnetic state in superconducting phases. However, the role of disorders caused by nonmagnetic dopants in quantum-critical regimes and their precise relation with superconductivity remain unclear. Here, the systematic evolution of a strong correlation between superconductive intertwined electronic phases and antiferromagnetism in Cd-doped CeCoIn 5 is presented by measuring current–voltage characteristics under an external pressure. In the low-pressure coexisting regime where antiferromagnetic (AFM) and superconducting (SC) orders coexist, the critical current ( I c ) is gradually suppressed by the increasing magnetic field, as in conventional type-II superconductors. At pressures higher than the critical pressure where the AFM order disappears, I c remarkably shows a sudden spike near the irreversible magnetic field. In addition, at high pressures far from the critical pressure point, the peak effect is not suppressed, but remains robust over the whole superconducting region. These results indicate that magnetic islands are protected around dopant sites despite being suppressed by the increasingly correlated effects under pressure, providing a new perspective on the role of quenched disorders in QCSs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Chapter 7: Learning Stable Local Volt/Var Controllers in Distribution Grids

This chapter describes a framework to synthesize provably stable local Volt/Var controllers for distributed energy resources (DERs) in power distribution grids (DGs). The goal is to control the reactive power injections of DERs to improve the system performance as quantified by a generic optimal reactive power flow (ORPF) problem. To achieve this, we jointly design for each DER the control function, which prescribes the reactive power update rule, and the equilibrium function, which approximates the ORPF solutions from local measurements of voltages and powers. We provide conditions on the equilibrium functions and the control parameters ensuring the stability of the closed-loop system. In particular, we discuss the trade-offs between each set of conditions accounting for practical considerations, like fully exploiting the DERs' generation capabilities and reducing the optimality gap. These conditions are then translated into learning constraints on the neural networks' parameters that are enforced in the training phase. We validate our framework with numerical simulations on the IEEE 37-bus network and through a comparison with an optimized version of standard piece wise linear control rules.

closed-loop asymptotic stability↗
DOE OSTI2024

Advancing Li-plating detection: Motivating a multi-signal correlation approach

Facilitating fast charging in lithium-ion batteries (LiBs) is often linked to Li-plating, which harms performance, longevity, and safety. Early detection of Li-plating is essential for rapid technological development and for preventing performance deterioration and ensuring safety during operation. Fast and real-time detection, using commonly collected measurements like voltage (V), current (I), temperature (T), and pressure (P), is highly desirable. Existing standalone methods relying on electrochemical and mechanical signatures, using half, smaller, or specially designed cells often operated at lower temperatures, fail to account for real-world fast-charging conditions. These signatures may also have inherent unreliability in aged LiBs, a phenomenon currently not-well understood. All these uncertainties have complicated practical implementation of a robust Li-plating detection technique. This study, through multiple case studies involving real-world fast-charging conditions using automotive-grade 11.6 Ah LiBs, shows that many single signal-based diagnostic techniques may be inadequate to detect Li-plating. Among various signatures, end-of-charge rest pressure, differential pressure-sensing, and end-of-charge rest voltage were identified as particularly useful in detecting Li-plating. Furthermore, A multi-signal-based detection technique is shown to be more robust in detecting Li-plating. Using both fresh and aged cells, the results and analysis highlight how detection capabilities are influenced by various factors, including battery design, size, charging speed, operating temperature, and degradation level. Adopting such a multi-signal Li-plating detection approach may be instrumental in the rapid development of battery technology in laboratories, as well as ensuring the enhanced safety of next-generation LiBs in real-world fast-charging applications.

25 ENERGY STORAGE↗
DOE OSTI2022

Effects of Absorber Near-Interface Compensation on Cd(Se,Te) Solar Cell Performance

Arsenic (As) has been shown to be an effective p-type dopant for CdTe, although high performance in As-doped devices remains difficult to achieve. Arsenic is prone to self-compensation in CdTe, as evidenced by the accumulation of dopant atoms in CdTe/Cd(Se,Te) near the interface with MgxZn1-xO (MZO). In this study, we use SCAPS 1D modeling software to investigate the effect of near-interface compensation, helping elucidate loss pathways in present-day As-doped devices and informing future growth directions. We consider three possible results of As accumulation: shallow donors, deep recombination centers, and a thin layer of excess acceptor accumulation. The reduction in near-interface carrier concentration caused by shallow donors is shown to improve open-circuit voltages (VOC), whereas deep levels are detrimental to all performance parameters. The thin charge layer affects capacitance-voltage (CV) measurements by reducing the depletion width while maintaining the same carrier concentration, replicating CV behavior that has been observed in actual devices. These results illustrate the importance of monitoring dopant accumulation within 100 nm of the interface, and suggest that reducing or eliminating the As concentration in this region would be beneficial. An undoped Cd(Se,Te) layer at the interface is suggested as a possible device structure to boost performance.

absorber↗
DOE OSTI2024

Ionic Peltier effect in Li-ion electrolytes

The coupled transport of charge and heat provide fundamental insights into the microscopic thermodynamics and kinetics of materials. We describe a sensitive ac differential resistance bridge that enables measurements of the temperature difference on two sides of a coin cell with a resolution of better than 10 μK. We use this temperature difference metrology to determine the ionic Peltier coefficients of symmetric Li-ion electrochemical cells as a function of Li salt concentration, solvent composition, electrode material, and temperature. The Peltier coefficients Π are negative, i.e., heat flows in the direction opposite to the drift of Li ions in the applied electric field, large, –Π > 30 kJ mol –1 , and increase with increasing temperature at T > 300 K. The Peltier coefficient is approximately constant on time scales that span the characteristic time for mass diffusion across the thickness of the electrolyte, suggesting that heat of transport plays a minor role in comparison to the changes in partial molar entropy of Li at the interface between the electrode and electrolyte. Here, our work demonstrates a new platform for studying the non-equilibrium thermodynamics of electrochemical cells and provides a window into the transport properties of electrochemical materials through measurements of temperature differences and heat currents that complement traditional measurements of voltages and charge currents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Electronic and optical properties of Zn-doped β-Ga 2 O 3 Czochralski single crystals

β-Ga 2 O 3 has several soluble deep acceptors that impart insulating behavior. In this study, we investigate Zn doping (0.25at.%) in bulk Czochralski and vertical gradient freeze β-Ga 2 O 3 . Representative crystals were assessed for orientation (electron backscatter diffraction and Raman spectroscopy), purity (glow discharge mass spectrometry and secondary ion mass spectrometry), optical properties (ultraviolet to near infrared absorption), and electrical properties (resistivity and current–voltage). Purity measurements indicate that Zn evaporation is insufficient to inhibit doping of Zn into β-Ga 2 O 3 . Hybrid functional calculations show Zn substitutes nearly equally on tetrahedral and octahedral sites, with less than ~0.1eV preference for the octahedral (Ga II ) site. Furthermore, calculations show that Zn Ga acts as a deep acceptor with trapping levels ~1.3 and ~0.9eV above the valence band for one and two holes, respectively. The solubility and electronic behavior of Zn dopants are consistent with measured concentrations >1×10 18 atoms/cm 3 and electrical measurements that show resistivity 10 11 –10 13 Ωcm, with no p-type conduction.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
DOE OSTI2023

Temperature dependence of resistivity of carbon micro/nanostructures: Microscale spatial distribution with mixed metallic and semiconductive behaviors

The temperature coefficient of resistivity (θ T ) of carbon-based materials is a critical property that directly determines their electrical response upon thermal impulses. It could have metal- (positive) or semiconductor-like (negative) behavior, depending on the combined temperature dependence of electron density and electron scattering. Its distribution in space is very difficult to measure and is rarely studied. Here, for the first time, we report that carbon-based micro/nanoscale structures have a strong non-uniform spatial distribution of θ T . This distribution is probed by measuring the transient electro-thermal response of the material under extremely localized step laser heating and scanning, which magnifies the local θ T effect in the measured transient voltage evolution. For carbon microfibers (CMFs), after electrical current annealing, θ T varies from negative to positive from the sample end to the center with a magnitude change of >130% over <1 mm. This θ T sign change is confirmed by directly testing smaller segments from different regions of an annealed CMF. For micro-thick carbon nanotube bundles, θ T is found to have a relative change of >125% within a length of ~2 mm, uncovering strong metallic to semiconductive behavior change in space. In conclusion, our θ T scanning technique can be readily extended to nm-thick samples with μm scanning resolution to explore the distribution of θ T and provide a deep insight into the local electron conduction.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Integration of fixed-frequency and FM-CW (frequency-modulated continuous-wave) reflectometers for coincident turbulence measurements on LTX- β (Lithium Tokamak eXperiment- β )

The fixed-frequency and frequency-modulated continuous-wave (FM-CW) reflectometers on LTX-β (Lithium Tokamak eXperiment-β) have been configured to use the same transmission lines and antenna arrays for coincident views of the core and edge plasma. The fixed-frequency channels (13.1–20.5 and 20–40 GHz, tunable between discharges) provide time-resolved measurements of density fluctuations, while the FM-CW channels (13.1–20.2 and 19.5–33.5 GHz) measure the density profile and fluctuations, with high spatial resolution and a sampling rate determined by the frequency sweep interval (5 μs). Data from both reflectometers are synchronously acquired to simultaneously leverage the wide bandwidth and high spatial resolution of the respective systems. Experiments showed that mutual crosstalk interference is momentary and does not diminish the capability of either system. Spectral analysis indicated broad power spectra (several hundreds of kHz) and suggests that the signals from the FM-CW system are consistent with under-sampled fixed-frequency signals. Radial correlations were explored using data from the two reflectometers, as well as from the FM-CW system alone. The core channels showed high levels of agreement between these two comparisons, suggesting that the data from the reflectometers are interchangeable for statistical estimates. For the edge channels, comparisons using data from the FM-CW reflectometer alone showed significant decorrelation due to time lag caused by the finite frequency up-sweep duration. Alternatively, this effect is eliminated when cross-correlating data from the different reflectometers. Finally, these results highlight the advantages of operating the fixed-frequency and FM-CW reflectometers in this manner, where the combined system can overcome the limitations of each separate system.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Electric spiking activity in epithelial cells

Epithelial cells (human keratinocyte cells and the canine MDCK cell line), traditionally viewed as electrically non-self-excitable and involved primarily in physiological functions such as barrier presentation, absorption, secretion, and protection, are shown here to exhibit traveling extracellular electric charge when they recover from spatially focused, laser-induced wounding of confluent monolayers cultured on a multielectrode array chip. Voltage spikes measured on these electrodes display depolarization, repolarization, and hyperpolarization phases with amplitudes similar to the action potentials of neurons but with the markedly slower duration of 1 to 2 s. Some propagate distances up to hundreds of μm from the wound with a mean speed of around 10 mm s −1 . Generation and transmission of bioelectric signals are significantly influenced by the perturbation of mechanosensitive cationic ion channels. These direct measurements confirm bioelectric signaling that previous work has hypothesized to regulate epithelial cell development and may have relevance to the frequency parameter selection of bioelectric devices.

Science & Technology - Other Topics↗
DOE OSTI2022

Three-dimensional modelling of a self-sustained atmospheric pressure glow discharge

The atmospheric pressure glow discharge (APGD) is a relatively simple and versatile plasma source used in diverse applications. Stable APGD operation at high currents, generally a challenge due to instabilities leading to glow-to-arc transition, has been demonstrated using actively-controlled cathodic cooling. This article presents the computational modelling and simulation of a self-sustained direct-current APGD in helium within a 10 mm pin-to-plate inter-electrode gap for currents ranging from 4 to 40 mA. The APGD model is comprised of the conservation equations for total mass, chemical species, momentum, thermal energy of heavy-species and of free electrons, and electric charge. The model equations are discretized using a nonlinear variational multi-scale finite element method that has demonstrated superior accuracy in other plasma flow problems, on a temporal and three-dimensional computational domain suitable to unveil the potential occurrence of instabilities. Modelling results show good agreement with experimental measurements of voltage drop and the same trend but higher values of temperature. The higher temperatures obtained by the simulations appear to be due to the absence of a near-cathode heat dissipation model. Here, the results also reveal that the distribution of electron density and of the ratio of atomic helium ions to total ions transitions from monotonically increasing away from the cathode to presenting a minimum near the centre of the gap with increasing current.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Second-harmonic signature of chiral spin structures in W/Pt/Co heterostructures with tunable magnetic anisotropy

Abstract Second-harmonic Hall voltage (SHV) measurement method has been widely used to characterize the strengths of spin–orbit torques (SOTs) in heavy metal/ferromagnet thin films saturated in the single-domain regime. Here, we show that the magnetic anisotropy of a W/Pt/Co trilayer can be robustly tuned from in-plane to out-of-plane by varying W, Pt, or Co thicknesses. Moreover, in samples with easy-cone anisotropy, SHV measurements exhibit anomalous ‘humps’ in the multidomain regime accessed by applying a nearly out-of-plane external magnetic field. These hump features can only be explained as a result of the formation of Néel-type domain walls, efficiently driven by nevertheless small SOTs in this double heavy metal heterostructure with canceling spin Hall angles.

Physics↗