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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Alternating-bias assisted annealing of amorphous oxide tunnel junctions

Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence and reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Improving molecular alignment and charge percolation in semiconducting polymer films with highly localized electronic states through tailored thermal annealing

Here, we have recently developed a strategy to improve charge percolation efficiency in a renowned family of naphthalene-diimide bithiophene (PNDI-T2) copolymers, based on the application of a tailored thermal treatment on pre-aligned films. Here we show that the accurate choice of thermal post-processing temperatures can induce a notable lamellar thickening and an improvement of molecular alignment, the latter being favored by alkyl chains with longer branches. Correspondingly, enhanced transport properties are observed. Interestingly, these are found to be independent of lamellar thickness. In fact, within this family of molecules, characterized by a locked non-planar conformation and strong intramolecular charge localization, the orientational order within charge percolation paths was found to be the only factor dictating charge transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Rapid scalable fabrication of roll-to-roll slot-die coated flexible perovskite solar cells using intense pulse light annealing

Perovskite solar cells have achieved high efficiencies at the lab scale using batch processes that often may not be scalable. Processes that can be integrated into a continuous manufacturing platform, such as roll-to-roll, where several processes can be carried out sequentially are necessary to develop a new cost-competitive solar technology. In this work, intense pulsed light thermal post-processing is coupled with scalable slot-die coating and air knife evaporation in a high-speed roll-to-roll process of up to 2 m min –1 . The optimization of IPL energy parameters, web speeds, solution flow rates, and concentration of precursor inks yielded a champion power conversion efficiency of 11.24% for a 1 cm 2 roll-to-roll coated device. The overall processing time for a single layer in this process is reduced from minutes to seconds and the overall footprint of the manufacturing process is decreased. Furthermore, this demonstrates the promising capabilities for intensed pulsed light to reduce manufacturing costs and paves a roadmap for scalable and efficient PSCs on a roll-to-roll platform.

14 SOLAR ENERGY↗
DOE OSTI2020

Carrier recombination parameters in diamond after surface boron implantation and annealing

In this study, an optical pump–probe technique was used to detect spatial distribution of carrier lifetimes across the thickness of a high-quality diamond device structure. Two samples with as-received and boron implanted surfaces were compared to assess the role of implantation and related processing on carrier recombination mechanisms. It was found that the two implanted surfaces show very different behaviors despite undergoing the same treatment. At one of the surfaces, carrier lifetimes remained relatively unchanged, indicating surface recombination rates in the 102–103 cm/s range. At the other surface, carrier lifetimes were almost a magnitude lower and correlated with the locally detected nitrogen vacancy defect that was attributed to the elevated concentration of residual nitrogen.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

The self-annealing of irradiation induced defects in magnetite Fe 3 O 4 : Revealing reversible irradiation-induced disorder transformation through in situ TEM

This work reports heavy ion-irradiation effects in polycrystalline Fe 3 O 4 . For this matter, Fe/Fe 3 O 4 heterostructures were irradiated in situ in a transmission electron microscopy with 1 MeV Kr ions at 50 K. Evidence of cubic to monoclinic transformation (a.k.a Verwey transition) was recorded in some magnetite grains upon cooling the sample (around 90 K); however, most of the oxide grains retain their cubic spinel structure. Irradiation effects were analyzed in the cubic phase up to a maximum dose of 38 dpa without the sign of amorphization. The extinction of first-order reflections was recorded at doses below 1 dpa, indicating the formation of a new (metastable) phase with half of the lattice parameters compared to the unirradiated Fe 3 O 4 crystal. The formation of the new crystalline phase, which also presents a high resistance to amorphization, is related to the disordering of the cation lattice and the high mobility of the cation interstitials. The metastable phase readily recovers around 225 K during the natural warming of the sample from 50 K to room temperature.

Atom irradiation effects↗
DOE OSTI2025

Cost of emulating a small quantum annealing problem in the circuit model

Demonstrations of quantum advantage for certain sampling problems have generated considerable excitement for quantum computing and have further spurred the development of circuit-model quantum computers, which represent quantum programs as a sequence of quantum gates acting on a finite number of qubits. Amongst this excitement, analog quantum computation has become less prominent, with the expectation that circuit-model quantum computers will eventually be sufficient for emulating analog quantum computation and thus rendering analog quantum computation obsolete. In this work we explore the basic requirements for emulating a specific analog quantum computation in the circuit model: the preparation of a biased superposition of degenerate ground states of an Ising Hamiltonian using an adiabatic evolution. We show that the overhead of emulation is substantial even for this simple problem. This supports using analog quantum computation for solving time-dependent Hamiltonian dynamics in the short term and midterm, assuming analog errors can be made low enough and coherence times long enough to solve problems of practical interest.

Quantum algorithms & computation↗