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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Study of structure defect interactions in aluminum by the acoustic method

Using echo pulse and resonance rod methods, internal friction in pure aluminum was studied as a function of frequency, hardening temperature, time (internal friction relaxation) and impurity content. These studies led to the conclusion that internal friction in these materials depends strongly on dislocation structure and on elastic interactions between structure defects. It was found experimentally that internal friction relaxation depends on the cooling rate and on the impurity content. Some parameters of the dislocation structure and of the diffusion process were determined. It is shown that the dislocated dependence of internal friction can be used as a method of nondestructive testing of the impurity content of high-purity materials.

Nicolaescu, I. I.↗
NASA NTRS1974

Method and device for detection of surface discontinuities or defects

Surface discontinuities of defects such as cracks and orifices are detected by applying a penetrating fluid, preferably a liquid, to a test surface so as to cause the liquid to penetrate any minute cracks or opening in the surface, removing the excess liquid from the surface, and leaving a residual in the discontinuities, cavities, or in the subsurface materials. A sheet of porous material impregnated with a sensitizing medium which will react with vapors of the residual liquid to form a visible pattern is applied to the test surface. The residual liquid trapped in the discontinuities, cavities, or subsurface material is vaporized, and, as the vapors contact the sensitizing medium on the sheet, a pattern corresponding to the discontinuity is formed on the sheet material and the penetrant completely removed from the sample.

Leger, L. J.↗
NASA NTRS1974

Gravitational effects on process-induced defects in single crystal silicon

Description and discussion of a series of experiments which vary each of several important processing parameters including wafer orientation, temperature, gravity greater than 1 g, and ultimately zero gravity. These experiments are in progress and results to date are included from experiments which control temperature, duration of thermal cycle, and wafer orientation during 1 g processing. Preliminary evidence is presented which indicates that gravitational stresses play a role in defect generation during processing at 1 g.

Porter, W. A.↗
NASA NTRS1975

Growth defects in thick ion-plated coatings

Industrial ion plating conditions were selected to deposit metallic coatings such as copper, gold, and chromium 2 micrometer thick on metal and glass substrates. The surface finishes of 304 stainless steel, copper, and brass were utilized with mechanically and electrolytically polished surfaces. Nodular growth occurred in these coatings during ion plating as revealed by scanning electron microscopy. Surface irregularities such as scratches, steps, ledges, and so forth are responsible for outward growth, the typical cone type, whereas surface contaminants and loosely settled foreign particles are responsible for lateral growth; namely, the extreme localized surface outgrowths. These defect crystallographic features create porosity in the coatings when subjected to stresses and strains.

Spalvins, T.↗
NASA NTRS1977

Ultrasonic detection of bearing defects

Experimental study shows that various sensors can be used to detect and monitor vibrations and stress waves emitted by defective bearings, giving early warning of impending bearing failure.

Ensor, L. C.↗
NASA NTRS1977

Field ionization device used for measuring the pulse height defect of He/+/ in silicon

A neutral particle detector using field ionization and liquid-nitrogen-cooled solid state detectors has been developed to investigate the pulse height defect of low energy He(+) ions in silicon. The field ionization tip is fabricated from a short length of tungsten wire; a typical detector is of the surface-barrier Si type with a thin Au window and low capacitance (about 15 pF); the assembly is mounted in a cylindrical vacuum chamber which is pumped to about 10 to the -6th torr. As an example, pulse height distributions for He(+) and H(+) taken at tip bias of 25.7 kV are presented. The detected energy of the H and He ions are studied as a function of the actual energies of accelerated ions, for a detector having a gold front conducting surface layer of 32 micrograms/sq cm.

Curtis, C. C.↗
NASA NTRS1977

Effect of preload on the fatigue and static strength of composite laminates with defects

The effect of a preload cycle on the structural performance of three graphite/epoxy composite laminates was studied. The layups studied were a laminate typical of general purpose structures (L1), a laminate representative of a filament wound tank (L2), and a laminate representative of turboengine fan blades. The effects of three sizes of simulated initial defects were studied. The tests developed static strength data, fatigue to failure data, and residual static data after application of a predetermined number of fatigue cycles. For L1 specimens, there was a slight trend for the static strength to be greater for preloaded specimens. After application of cyclic loading, however, the influence of preloading was insignificant. In L2 and L3 specimens there was no consistent difference in the static or fatigue results between preloaded and nonpreloaded specimens.

Porter, T. R.↗
NASA NTRS1980

Detecting insulation defects in metal/plastic films

Simple apparatus checks insulation between plastic and metal surfaces. Film can be inspected more accurately; apparatus can spot minute electrical contaminants between plastic and metal films. Steel roller connected to high-range ohmmeter is guided over entire plastic area of test sample. Roller weighs 2 lb. (0.9 kg), which effectively translates into 250-psi (1.76X10 to 6th power -N/sq m) contact pressure at plastic surface sufficient to locate microscopic defects.

Buggle, R. N.↗
NASA NTRS1981

Defect chemistry and characterization Hg(1-x)Cd(x)Te

Iodine doped single crystal samples of mercury cadmium telluride were annealed at temperatures varying from 450 C to 600 C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with a fraction of the iodine being present as donor occupying tellurium lattice sites and a fraction being present as acceptors resulting from the iodine on tellurium lattice sites pairing with the doubly ionized native acceptor defects. The solubility of the donor species increases with increase in Hg pressure, whereas that of the acceptor species increases with decrease in Hg pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction were established.

Vydyanath, H. R.↗
NASA NTRS1981

Defect chemistry and characterization of (Hg, Cd)Te

Single crystal samples of phosphorus doped Hg sub 0.8 Cd sub 0.2 Te were anneald at temperatures varying from 450 C to 600 C in various Hg atmospheres. The samples were quenched to room temperature from the annealing temperatures. Hall effect and mobility measurements were performed at 77 K on all these samples. The results indicate the crystals to be p type for a total phosphorus concentration of 10 to the 19th power/cu cm in all the samples. The hole concentration at 77 K increases with increasing Hg pressures at 450 C and 500 C contrary to the observation in undoped crystals. Also, at low Hg pressures the concentration of holes in the phosphorus doped crystals is lower than in the undoped crystals. The hole concentration in all the samples is lower than the intrinsic carrier concentration at the annealing temperatures. The hole mobility in the doped crystals is similar to that in the undoped crystals. A defect model according to which phosphorus behaves as a single acceptor interstitially, occupying Te lattice sites while it acts as a single donor occupying Hg lattice sites was established. Equilibrum constants established for the incorporation of all the phosphorus species explain the experimental results

Vydyanath, H. R.↗
NASA NTRS1984

Deallocating Defective Space on Winchester Disks

Method given for locating and deallocating defective sectors or tracks in Winchester-disk system partitioned into two regions, one for each of two operating systems (OS). First is real-time (on-line) OS, second is diagnostic (off-line) OS.

King, W., Jr.↗
NASA NTRS1982

Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected.

Natesh, R.↗
NASA NTRS1985

Photographic Screening for Eye Defects

Images of retinas examined for characteristic patterns. Color photographs of retinas taken. Proper alinement of eye obtained by asking subject to gaze at light-emitting diode. "Red-eye" patterns in resulting color photographs examined by trained observers for signs of ocular defects. System used to check power of contact lenses and eyeglasses by taking photographs with these items in place.

Richardson, J.↗
NASA NTRS1983

Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material: A speculative approach

Some background information on intrinsic point defects is provided and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. The co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials are discussed. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. The self-interstitial content of these agglomerates is assumed to determine their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. Oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO, precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor stables and that these interface states are responsible for at least part of the light inhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Goesele, U.↗
NASA NTRS1984

Defects in High Speed Growth of EFG Silicon Ribbon

Silicon ribbons grown by the Edge-defined Film-fed Growth (EFG) technique exhibit a characteristic defect structure typified by twins, dislocations, grain boundaries and silicon carbide inclusions. As growth speed is increased from less than 2.5 cm per minute, the structural details change. The major difference between the ribbons grown at speeds below and above 2.5 cm per minute is in the generation of a cellular structure at the higher growth speeds, observable in the ribbon cross section. The presence of the cross sectional structure leads, in general, to a reduction in cell performance. Models to explain the formation of such a cross sectional structure are presented and discussed.

Rao, C. V. H. N.↗
NASA NTRS1984

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗