SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.
Parallel lasers interact in shared space to alter output wavelength. New device consists of two stripe lasers in aluminum gallium arsenide chip. Parallel stripes close enough so light from lower laser coupled into upper laser and vice versa. Lasers operated by low-duty-cycle current pulses. Lasing threshold of each about 100 mA. Currents controlled independently. Useful in optical communications systems employing wavelength-division multiplexing.
This document is a progress report of work done in 1985 on the Communications and Control for Electric Power Systems Project at the Jet Propulsion Laboratory. These topics are covered: Electric Field Measurement, Fiber Optic Temperature Sensing, and Optical Power transfer. Work was done on the measurement of ac and dc electric fields. A prototype sensor for measuring alternating fields was made using a very simple electroscope approach. An electronic field mill sensor for dc fields was made using a fiber optic readout, so that the entire probe could be operated isolated from ground. There are several instances in which more precise knowledge of the temperature of electrical power apparatus would be useful. This report describes a number of methods whereby the distributed temperature profile can be obtained using a fiber optic sensor. The ability to energize electronics by means of an optical fiber has the advantage that electrical isolation is maintained at low cost. In order to accomplish this, it is necessary to convert the light energy into electrical form by means of photovoltaic cells. JPL has developed an array of PV cells in gallium arsenide specifically for this purpose. This work is described.
An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.
A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
Thermal stress cycling was performed on gallium arsenide solar cells to investigate their electrical, mechanical, and structural integrity. Cells were cycled under low Earth orbit (LEO) simulated temperature conditions in vacuum. Cell evaluations consisted of power output values, spectral response, optical microscopy and ion microprobe mass analysis, and depth profiles on both front surface inter-grid areas and metallization contact grid lines. Cells were examined for degradation after 500, 5,000, 10,000 and 15,245 thermal cycles. No indication of performance degradation was found for any vendor's cell lot.
The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases the substrate was thinned to reduce overall cell weight with good ruggedness. The conversion efficiency of 2 by 2 cm cells under AMO reached 17.1 percent with a cell thickness of 6 mils. The work described forms the basis for future cascade cell structures, where similar interconnecting problems between the top cell and the bottom cell must be solved. Applications of the GaAs/Ge solar cell in space and the expected payoffs are discussed.
The selected conceptual design of the dome lens photovoltaic concentrator for space applications uses a 3.7 cm square aperture dome lens to focus onto a 0.4 cm active diameter gallium arsenide cell. The selected configuration will provide 91.5 percent lens optical efficiency and 21.4 percent cell efficiency at 100 suns irradiance and 100 C cell temperature, for an overall cell efficiency of 19.6 percent. The selected configuration will tolerate 1 degree tracking errors with negligible loss of performance. The selected panel weight is 2.5 kg/sq.m.
In order to determine if a solar cell would indeed emit usable light as expected, a gallium arsenide solar cell was forward biased and examined with an infrared viewer. The light emitted from the solar cell was not uniform, ever though the I-V curve of the solar cell displayed no defects.
A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.
Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.
The experimental procedure consists of the measurement of the Hall coefficient, resistivity, and Hall mobility as a function of temperature of a sample of gallium arsenides before and after irradiation with low and high energy protons. Work has begun on the development of the theory and subsequently experiments will be designed and performed.
Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.
The Space Station Communications Control Zone is a disk shaped region 40 nautical miles in diameter and 10 nautical miles thick centered about the Space Station. It is estimated that 6 simultaneous Multiple Access (MA) channels will be required to satisfy the projected communications needs within this zone. These channels will be used to communicate with MA users located anywhere within the Control Zone. This paper details the tradeoffs and design implementation of a multiple beam integrated phased array to provide antenna coverage of the Control Zone. The array is a compact, modular assembly using Gallium Arsenide circuits, microstrip elements, and advanced packaging techniques. This results in a small, reliable antenna system capable of meeting the projected Space Station requirements and flexible enough to grow and evolve as the Space Station communications needs develop.
Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37 MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150 x AMO. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short circuit current and irradiance. The cells are 5 x 5 mm with a 4-mm diameter illuminated area.
Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated.
A comparative study of the influence of buoyancy driven fluid flow on gallium arsenide (GaAs) crystal growth was undertaken. Crystals will be grown from melts with different degrees of convective flow including growth in the microgravity environment of space. The space growth of GaAs will be performed in a Get Away Special payload. A well insulated growth furnace was designed for both Earth-based and space-based experiments. The self contained payload will carry two such furnaces in addition to a large battery power source and a microprocessor-based control and data acquisition system for regulating the growth process with high precision. The microcomputer will also monitor the growth conditions and measure and record the acceleration in 3 axes.
Structural information of special interest to crystal growers and device physicists is now available from high resolution monochromatic synchrotron diffraction imaging (topography). In the review, the importance of superior resolution in momentum transfer and in space is described, and illustrations are taken from a variety of crystals: gallium arsenide, cadmium telluride, mercuric iodide, bismuth silicon oxide, and lithium niobate. The identification and understanding of local variations in crystal growth processes are shown. Finally, new experimental opportunities now available for exploitation are indicated.