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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Voltage-induced magnetic domain evolution in a phase-change material

Applying voltage to metal–insulator transition (MIT) materials allows electrical actuation of the local electronic phase state. In MIT systems that have the electronic order coupled with the magnetic order, voltage switching of the electronic phase state can also enable the electrical manipulation of magnetic properties. In this work, we utilized x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) to investigate the control of magnetic domain configurations in ferromagnetic MIT electrical switches. For applied voltages above a threshold value, the XMCD-PEEM images show that the magnetic domains separate into two distinct regions: one with a high contrast (white/black), indicating well-defined micrometer-scale magnetic domains with a component of their magnetization aligned parallel/antiparallel to the x-ray helicity, and the other with different shades of intermediate contrast (gray). Significant changes in magnetic domain configurations upon voltage biasing were only observed in these gray regions. Furthermore, the voltage-induced magnetic domain separation was found to be bias polarity-dependent, with the gray regions expanding from the opposite sample edge when the applied voltage polarity was reversed. This polarity-dependent electrical control of magnetic domain configurations during the MIT switching opens alternative opportunities in memory applications for magnetic MIT switching materials.

42 ENGINEERING↗
NASA NTRS2004

Charge Storage, Conductivity and Charge Profiles of Insulators as Related to Spacecraft Charging

Dissipation of charges built up near the surface of insulators due to space environment interaction is central to understanding spacecraft charging. Conductivity of insulating materials is key to determine how accumulated charge will distribute across the spacecraft and how rapidly charge imbalance will dissipate. To understand these processes requires knowledge of how charge is deposited within the insulator, the mechanisms for charge trapping and charge transport within the insulator, and how the profile of trapped charge affects the transport and emission of charges from insulators. One must consider generation of mobile electrons and holes, their trapping, thermal de-trapping, mobility and recombination. Conductivity is more appropriately measured for spacecraft charging applications as the "decay" of charge deposited on the surface of an insulator, rather than by flow of current across two electrodes around the sample. We have found that conductivity determined from charge storage decay methods is 102 to 104 smaller than values obtained from classical ASTM and IEC methods for a variety of thin film insulating samples. For typical spacecraft charging conditions, classical conductivity predicts decay times on the order of minutes to hours (less than typical orbit periods); however, the higher charge storage conductivities predict decay times on the order of weeks to months leading to accumulation of charge with subsequent orbits. We found experimental evidence that penetration profiles of radiation and light are exceedingly important, and that internal electric fields due to charge profiles and high-field conduction by trapped electrons must be considered for space applications. We have also studied whether the decay constants depend on incident voltage and flux or on internal charge distributions and electric fields; light-activated discharge of surface charge to distinguish among differing charge trapping centers; and radiation-induced conductivity. Our experiments also show that "Malter" electron emission occurs for hours after turning off the electron beam. This Malter emission similar to emission due to negative electron affinity in semiconductors is a result of the prior radiation or optical excitations of valence electrons and their slow drift among traps towards the surface where they are subsequently emitted. This work is supported through funding from the NASA Space Environments and Effects Program.

Dennison, J. R.↗
NASA NTRS2008

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗
NASA NTRS1992

Silicon device performance measurements to support temperature range enhancement

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Bromstead, James↗
DOE OSTI2021

Experimental Verification of Ir 5d Orbital States and Atomic Structures in Highly Active Amorphous Iridium Oxide Catalysts

In iridium oxide catalysts, the electronic states whose energies are in the range of energetics and charge transfer kinetics of the oxygen evolution reaction (OER) originate from the Ir 5d orbital states. However, the understanding of the atomic structures and orbital states underlying catalytic reactivity in amorphous iridium oxide oxygen evolving catalysts (Ir-OECs) is incomplete compared to that of crystalline oxides, owing to a lack of direct experimental verification. Here, we present experimental approaches using resonant inelastic X-ray scattering (RIXS) to directly access Ir 5d orbital excitations at the Ir L 3 edge and atomic pair distribution function (PDF) measurements to characterize electronic and coordination structures at the atomic scale. The so-called iridium blue layer (IrBL) and IrO x were formed from the organometallic precursor complex [Cp*Ir(H 2 O) 3 ]SO 4 and the inorganic precursor IrCl 3 , respectively. Ex situ IrBL and IrO x films for RIXS and PDF measurements were prepared by conditioning electrodeposited films at a low voltage. The incident energy RIXS profile of IrO x exhibited extra weak resonantly enhanced excitation below 2 eV energy loss. The feature was clearly different from a single high-energy excitation above 3 eV of IrBL related to the interband transition between π- and σ-antibonding states. The atomic structure refinement based on PDF measurements revealed the atomic structure domains to have edge- and corner-shared IrO 6 octahedra with trigonal-type distortion. Furthermore, density functional theory calculations guided by the refined atomic structures shed light on the electronic structure corresponding to experimental results, including insulating and metallic phases in ex situ IrBL and IrO x films, respectively. Our study establishes different Ir 5d orbital states and atomic structures in two amorphous Ir oxide OER catalysts in their reduction states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Optimization of DARHT Axis 1 Injector Voltage

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility provides flash radiography capabilities using two electron Linear Induction Accelerators (LIA’s). Axis-1 of DARHT produces a 20- MeV, 2-kA, 80-ns-FWHM electron beam. The strict requirements for flash radiography require a detailed understanding of the LIA’s performance, including precision measurements of the injector electron beam energy. The technique for time resolved measurement of the electron beam energy using electron Permanent Magnet Spectrometer (ePMSpec) has been developed. The electron energy then is used to infer the voltage produced by the injector pulsed power. The injector pulsed power of DARHT I consists of a 1.5-MV, glycol-insulated Blumlein that is pulsecharged by a step-up transformer and switched by four, laser-triggered spark gaps. A series of increasing impedance transmission lines are used to transform the output voltage of the Blumlein to a maximum of 3.8MV at the diode. Figure 1a shows a graphic of the Axis-1 prime power tank, Blumlein and downstream transmission lines. The injector pulse power is designed to produce voltage on a velvet cathode located in the vacuum vessel. The specifications of the voltage-pulse flat-top over 60ns is +/-1%. A key element in the high-voltage circuit is the ethylene glycol Blumlein. The outer volume, adjacent to the laser triggered switches of the Blumlein, is a peaking capacitor. This is an independent volume that contains a mixture of ethylene glycol and water to make it an adjustable capacitor of 380 to 750 pF.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability

The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and zero gate bias. The key enabling device design is a new type of tri-gate, the junction tri-gate, which comprises p-n junction wrapping around AlGaN/GaN fins in the gate region. At 150 °C, the GaN tri-gate junction HEMT (Tri-JHEMT) retains strong gate control and stable threshold voltage, while the traditional tri-gate metal-insulator-semiconductor (MIS) HEMTs fabricated on the same wafer shows a large threshold voltage shift and inferior capabilities of voltage blocking. These results show the excellent thermal stability of GaN Tri-JHEMTs and their great potentials for power electronics applications.

Ma, Yunwei↗
NASA NTRSDate not supplied

Evaluation of Coatings for the Electrodynamic Dust Shield Application on Thermal Radiators

Dust acts as a blackbody, becoming hot if left in direct sunlight. This is a problem for thermal radiators where the main function is to radiate heat away from an object. If dust lands on the thermal radiator, the unit will less effectively reject heat, and it will overheat. This can lead to electrical or system failure. The current state-of-the-art in active dust mitigation is the Electrodynamic Dust Shield (EDS) which uses an electric field generated by alternating high positive and negative voltages (low current) to eject the charged dust off surfaces. An EDS made from copper coated Kapton is an ideal candidate to be bonded to a thermal radiator and coated with a low solar absorptance, high heat-emitter coating. This work compares the dust removal of copper-Kapton EDSs covered with different thermal radiator coatings in air and vacuum environments. The coatings include AZ-93 paint, Thermal Bright, and Solar White, a coating developed by the Applied Physics Lab (APL) at NASA Kennedy Space Center (KSC). The resistance and the thickness of the various coatings impact how well it works as an insulative layer for the EDS. Preliminary results indicate that Solar White may have better properties for dust removal and thermal rejection than the other coatings.

Krystal L Acosta↗
NASA NTRSDate not supplied

Evaluation of Coatings for the Electrodynamic Dust Shield Application on Thermal Radiators

Space dust acts as a blackbody, becoming hot if left in direct sunlight. This is a problem for thermal radiators used in space missions, where the main function is to radiate heat away from an object. If dust lands on the thermal radiator, the unit will less effectively reject heat, and it will overheat, leading to electrical or system failure. The current state-of-the-art in active dust mitigation is the Electrodynamic Dust Shield (EDS) which uses an electric field generated by alternating high positive and negative voltages (low current) to eject the charged dust off surfaces. An EDS made from copper coated Kapton is an ideal candidate to be bonded to a thermal radiator and coated with a low solar absorptance, high heat-emitter coating. This work compares the dust removal of copper-Kapton EDSs covered with different thermal radiator coatings in air and vacuum environments. The coatings include AZ-93 paint, Thermal Bright, and Solar White, a coating developed by the Applied Physics Lab (APL) at NASA Kennedy Space Center (KSC). The resistance and the thickness of the various coatings impact how well it works as an insulative layer for the EDS. Preliminary results indicate that Solar White may have better properties for dust removal and thermal rejection than the other coatings.

Krystal L. Acosta↗
NASA NTRS1973

The effect of surface conditions on the work function of insulators and semiconductors

Ionization energies of organic semiconductors were determined using single crystals of the material. The theory of the method is essentially that of Millikan's oil drop experiment. The technique employed in the experiment is based on the electrostatic method of balancing a charged particle in an electric field against the force of gravity for different excitation energies above the threshold value, and from an estimate of the balancing voltages, read off the ionization energy from the intercept of the energy axis in a plot wavelength corresponding to the balancing potential for the incident radiation of wavelength. In the modified technique which is adopted in the present experimental investigation, a small single crystal is suspended by a fine quartz fiber between two vertical capacitor plates to which a suitable high voltage is applied.

George, A.↗
NASA NTRS1978

Laboratory studies of electrical properties of insulating materials

The characteristics of satellites are influenced by the electrical properties of the dielectric exterior. It was found in simulated space environment tests that the electrical conductivities of dielectrics are affected as the result of interactions with various components of the environment. The degree to which the conductivity was affected varied with material. In some instances the changes found to occur could be used to advantage, particularly if they could be enhanced. For example, the increased electrical conductivity of Kapton resulting from solar illumination could be used to advantage to eliminate the charge storage leading to electrical breakdown during magnetic substorms. Similarly the relative immunity of FEP Teflon to change from response to the space environment makes it a logical choice as a solar cell cover in a high-voltage solar array.

Nanevicz, J. E.↗
NASA NTRS2000

Effect of Elevated Pressure on the Heat Transfer and Power Requirements During Bridgman Growth of PMN-PT Crystals

Performance of the furnace during Bridgman growth of the lead magnesium niobate-lead titanate crystal (PMN-PT) is analyzed. PMN-PT is electrostrictive ceramic that has near ideal strain-voltage function. Furthermore piezoelectric (2000 to 2300 pC/N) and coupling (92 to 95%) constants are exceptionally good. Due to these properties PMN-PT has wide range of applications - from sonars to transducers in a high precision optical systems. In this research first attempt to crystallize PMN-PT in a Mellen type vertical Bridgman furnace was not successful, as melting temperature of precursor materials was not achieved. At this point choice was between building a new more powerful facility or finding ways to enhance performance of the existing furnace. Besides adjusting power supply to the individual heating elements, redesigning ampoule holding cartridge and improving furnace insulation one more radical improvement was proposed. The entire furnace was placed into the high pressure chamber. Further experiments confirmed that temperature inside the furnace was increased sufficiently to melt precursor materials to obtain PMN-PT. Numerical modeling is undertaken to find limitations of this technique and to predict temperature distribution inside the ampoule. It is of interest also to account for main factors contributing to a higher temperatures achieved in the furnace under the higher pressure (up to 10 atm.). Numerical model of the furnace is based on general purpose finite - element code FIDAP and on previous efforts to model Bridgman type furnace with multiply heaters. In order to account for all heat transfer mechanism involved - conduction, convection and radiation - different parts of the furnace are modeled in accordance with expected dominant mode of heat transfer - conduction in the solid parts, conduction and radiation in the ampoule, gas convection and conduction in the furnace openings complemented with wall-to-wall radiation. Because of these complicating factors, dimensional rather than non-dimensional modeling is performed using steady-state 2-D and 3-D models. Particular attention is paid to the modeling of radiation in a semitransparent material of ampoule 7 sapphire. The radiation model is validated by solving realistic test problem - conduction and radiation heat transfer in the fused quartz. Results are in agreement with both experimental and analytical data.

Bune, Andris↗
DOE OSTI2022

Highly reversible Li 2 RuO 3 cathodes in sulfide-based all solid-state lithium batteries

The practical application of high-capacity lithium-rich cathode materials in lithium-ion batteries has been largely restricted by severe side reactions with electrolytes. Herein, we report a highly stable lithium-rich Li 2 RuO 3 cathode by forming a passivating solid electrolyte interphase at the interface with a sulfide solid electrolyte such as Li 6 PS 5 Cl in all-solid-state lithium batteries (ASSLBs), which efficiently suppresses serious parasitic interfacial reactions and fast-increasing interfacial impedance normally observed in liquid electrolytes. The exceptionally high interfacial stability of the Li 2 RuO 3 /sulfide electrolyte interface contributes to a high reversible capacity of 257 mA h g –1 of Li 2 RuO 3 at 0.05C rate, and unprecedented cycling stability with 90% capacity retention after 1000 cycles at 1C rate. Iin this work, comprehensive experimental characterizations and first-principles calculations disclose that electronically insulating interfacial reaction products forming at the interface between the Li 2 RuO 3 cathode and Li 6 PS 5 Cl facilitate the formation of a stable and passivating interphase and block the continuous side reactions. Importantly, reversible oxygen redox activity of Li 2 RuO 3 is well-maintained in this configuration of ASSLBs even after 600 cycles, thus the common voltage decay of the Li-rich material is also significantly reduced. These new discoveries demonstrate the critical role of interface design for achieving prolonged cycling stability of lithium-rich cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2024

Phase-Slip Lines and Anomalous Josephson Effects in Tungsten Nanoscale Cluster-Based Topological Insulator Nanobridges: Implications for Topologically Protected Qubits and Quantum Sensors

Superconducting topological systems formed by a strong 3D topological insulator (TI) in proximity to a conventional s-wave superconductor (SC) have been intensely studied, as they may host Majorana zero modes. However, there are limited experimental realizations of TI-SC systems in which robust superconducting pairing is induced on the surface states of the TI and a topological superconducting state is established. Here, we fabricate a TI-SC system by depositing, via a focused ion beam, tungsten (W) nanoscale clusters on the surface of TI Bi 0.91 Sb 0.09 . We find that the resulting heterostructure supports phase-slip lines (PSLs) that act as effective Josephson junctions (JJs). Here, we probe the response of the system to microwave radiation. We find that for some ac frequencies, and powers, the resulting Shapiro steps’ structure of the voltage–current characteristic exhibits a missing first step and an unexpectedly wide second Shapiro step. The theoretical analysis of the measurements shows that the unusual Shapiro response arises from the interplay between a static JJ and a dynamic one and allows us to identify the conditions under which the missing first step can be attributed to the topological nature of the JJs formed by the PSLs. Our results suggest an approach to induce superconductivity in a TI, a route to realizing highly transparent topological JJs, and show how the response of superconducting systems to microwave radiation can be used to infer the dynamics of PSLs. Highly transparent topological junctions are promising candidates to realize vector field sensors with very high sensitivity. In addition, due to the nontrivial Berry phase of the TI’s surface states such junctions can be in a topological state which is ideal to create topologically protected qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRSDate not supplied

Conductive Tether Coating for Electrodynamic Tethers

The Propulsive Small Expendable Deployer System (ProSEDS), which is an on-orbit demonstration of the propulsion capabilities of electrodynamic tethers in space, is a secondary payload on a Delta 11 unmanned expendable booster. The ProSEDS tether consists of a 5 km bare electrodynamic tether and a 1 0-km non-conductive leader tether. Near the Delta 11, 160 m of the conductive tether is insulated to prevent plasma electron collection from the plasma contactor and for other science requirements. The remainder of the 5-km conductive tether is coated with a new conductive coating to collect plasma electrons. A bare metal tether easily collects electrons from the plasma, but thermal concerns preclude this design. A highly emissive conductive polymer developed by Triton Systems, Inc. has been optimized for both conductivity and thermo-optical properties. The current design for the ProSEDS conductive tether is seven individually coated strands of 28 AWG aluminum wire, coated with an atomic oxygen-resistant conductive polymer composed of a mixture of COR (Colorless Oxygen Resistant) and polyanaline (PANI) known as C-COR (Conductive-Colorless Oxygen Resistant). The conductive-coated wire strands are cold-welded to individually coated strands of the insulated tether. The insulated tether is coated with 1 mil of polyimide and an atomic oxygen resistant polymer TOR-BP. The insulated tether must stand off the entire voltage of the tether (1 200 V) at various times during the mission. All seven wires are twisted around a Kevlar-29 core using the Hi-wire design. Extensive testing has been performed at the Marshall Space Flight Center to qualify both the conductive coating and insulating coating for use on the ProSEDS tether. The conductive coating has been exposed to a plasma to verify the coatings ability to collect electrons from the space plasma from 0 to 1500 V, and to verify the coatings ability to collect electrons after atomic oxygen exposure. The insulated coating has been tested to verify its dielectric strength both in a vacuum and air. Thermal optical properties on both coatings have been measured before and after atomic oxygen testing. The results of these tests will be presented.

Jason A Vaughn↗
DOE OSTI2024

SSTDR and FDR Detection of Un-Energized and Energized Cable Anomalies Including Thermal Degradation Using Machine Learning

Historically, cables are initially qualified for nuclear power plant use for 40 years. As plants extend their operating license to 60 and 80 years, continued use of these cables must shift to a performance-based approach since it is cost prohibitive to completely replace cables that are likely still capable of performing their design function. A variety of cable tests are available and are commonly applied during outages when the cables can be taken out of service. Frequency domain reflectometry (FDR) is one of these test methods that is being more broadly accepted and used because it not only detects anomalies along the cable with a low-voltage signal that does not stress the cable insulation, but the technique also locates the anomalies. This supports follow-up local inspection and local repair or partial replacement of a damaged cable segment. Currently, FDR testing is only applied to cables that are taken out of service since the test instrument would be damaged by operational voltages. A related technology that has found some acceptance in the aircraft and rail industry is spread spectrum time domain reflectometry (SSTDR). This technology has been implemented with a custom commercial instrument by LiveWire Innovation that is designed to operate on live cables up to 1000 volts and with a bandwidth of 48 MHz. Initial evaluation by the Pacific Northwest National Laboratory (PNNL) of the Live Wire system indicated that a broader bandwidth (BW) SSTDR may be better for many kinds of flaws. This led PNNL to develop an SSTDR laboratory instrument suitable for tests up to 500 MHz bandwidth. Testing on energized cables is also desirable for online monitoring systems so an inductive clamshell coupler was developed that allows energized cables to be tested up to at least 5 kV and likely higher voltage levels. Dielectric spectroscopy and tan delta testing plus various laboratory destructive tests were included in this data acquisition campaign directed to feed a machine learning (ML) study. With these kinds of developments, online energized cable tests may be possible with industrial adoption of such hardware advances but it will be completely impractical to have highly skilled data analysts continually examine these complex signals for indications of damage or compromised conditions. If online testing is to be implemented in new test hardware, it must be accompanied by software that can interpret the signals and alert plant operators of changing or degraded conditions. The thermally aged, shielded cable investigated here was separately treated for ML analysis. Visual analysis of electrical data showed generally increasing peaks where the cable entered and exited the oven. These peaks were not exactly aligned with expected locations, but these differences were attributed to velocity of propagation calibration errors. Only supervised ML was applied to the thermally aged data as this data was only available shortly before the committed publication date of this report. The supervised ML was structured to divide the 0 to 70-day responses as ‘normal’ from 0 to 35 days or ‘anomalous’ from 36 to 70 days, based on cable tensile elongation at break (EAB) insulation characterization. Using 80% of the data for training and 20% for testing, the supervised ML predicted normal versus anomalous was 70% accurate. Important conclusions include: • Accuracy to predict the presence of cable damage is improved from the 2023 effort by more training data. Weighted accuracies for comparisons among the instruments ranged from 67 to 89 % for unsupervised ML and 71 to 99% for supervised ML. • Based on the synthetic data tests, the unsupervised models are more generalizable to unseen anomalies. The Multi-Layer Perceptron classifier (MLP) model reported as high as 99.7% accuracy on the test data, but this dropped to 58.3% when tested on the synthetic data. In contrast, the unsupervised Pointwise model only achieved 89.7% accuracy on the experimental data but reported 78.3% accuracy on the synthetic data. • The best anomaly indicators are higher frequency (400 MHz BW) FDR data. Other tests may be interesting but for this study, this was the best predicter.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Nm-scale electrical resistance imaging on CdTe by scanning spreading resistance microscopy

Local resistance imaging can provide information on nm-scale carrier distribution in semiconductor devices. Scanning spreading resistance microscopy (SSRM), an atomic force microscopy-based nm-scale resistance mapping technique, has been developed for carrier delineation in Si microdevices. We report on the development and validation of SSRM on CdTe materials, by testing on molecular beam epitaxy (MBE) grown CdTe films. The probe/CdTe contact resistance was suppressed sufficiently below sample's spreading resistance by pressing the probe into the sample with ∼mN contact force and applying a large sample/probe forward bias voltage (V s ), which was understood by analyzing current-voltage (I-V) involving a serially connected insulating top layer with underlying spreading resistance. The carrier concentration as deduced from the resistance measurement, using a single mobility value, is consistent with Hall measurement with a standard deviation of 14% based on a set of MBE films with carrier concentrations in the range of 10 15 –10 16 /cm 3 . The doping polarity was readily identified by flipping V s polarity, where the resistance with reverse V s is orders of magnitude larger than forward V s . While focusing on the SSRM technique validation, we also show an example on an As-doped Cd(Se,Te) polycrystalline thin film of a high-performance CdTe solar cell, which illustrates the local resistance nonuniformity with up to two orders of magnitude differences, indicating if local mobility is roughly constant, local carrier concentration can have significant nonuniformity.

14 SOLAR ENERGY↗
DOE OSTI2021

A Josephson junction with h -BN tunnel barrier: observation of low critical current noise

Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h-BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 /h-BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h-BN layer. Furthermore, we characterized the superconducting current and voltage (I–V) relationships and Fraunhofer pattern of the NbSe 2 /h-BN/Nb junction. Notably, we demonstrated the critical current noise (1/f noise power) in the h-BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h-BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗