Search NASA⌕ Search

SEARCH · Search NASA

Results for “Irradiation Damage”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗
NASA NTRS1979

Low energy proton radiation damage to (AlGa)As-GaAs solar cells

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation.

Loo, R.↗
NASA NTRS2004

Computation Molecular Kinetics Model of HZE Induced Cell Cycle Arrest

Cell culture models play an important role in understanding the biological effectiveness of space radiation. High energy and charge (HZE) ions produce prolonged cell cycle arrests at the G1/S and G2/M transition points in the cell cycle. A detailed description of these phenomena is needed to integrate knowledge of the expression of DNA damage in surviving cells, including the determination of relative effectiveness factors between different types of radiation that produce differential types of DNA damage and arrest durations. We have developed a hierarchical kinetics model that tracks the distribution of cells in various cell phase compartments (early G1, late G1, S, G2, and M), however with transition rates that are controlled by rate-limiting steps in the kinetics of cyclin-cdk's interactions with their families of transcription factors and inhibitor molecules. The coupling of damaged DNA molecules to the downstream cyclin-cdk inhibitors is achieved through a description of the DNA-PK and ATM signaling pathways. For HZE irradiations we describe preliminary results, which introduce simulation of the stochastic nature of the number of direct particle traversals per cell in the modulation of cyclin-cdk and cell cycle population kinetics. Comparison of the model to data for fibroblast cells irradiated photons or HZE ions are described.

Cucinotta, Francis A.↗
NASA NTRS2004

DNA fragmentation induced by Fe ions in human cells: shielding influence on spatially correlated damage

Outside the magnetic field of the Earth, high energy heavy ions constitute a relevant part of the biologically significant dose to astronauts during the very long travels through space. The typical pattern of energy deposition in the matter by heavy ions on the microscopic scale is believed to produce spatially correlated damage in the DNA which is critical for radiobiological effects. We have investigated the influence of a lucite shielding on the initial production of very small DNA fragments in human fibroblasts irradiated with 1 GeV/u iron (Fe) ions. We also used gamma rays as reference radiation. Our results show: (1) a lower effect per incident ion when the shielding is used; (2) an higher DNA Double Strand Breaks (DSB) induction by Fe ions than by gamma rays in the size range 1-23 kbp; (3) a non-random DNA DSB induction by Fe ions. c2004 COSPAR. Published by Elsevier Ltd. All rights reserved.

NASA Discipline Radiation Health↗
NASA NTRS1985

Photon radiation effects on CdS/CuInSe2 thin film solar cells

The unknown tolerance of CuInSe2 cells to proton irradiation, was tested. It was shown that CdS/CuInSe2 solar cells have an inherent tolerance to irradiation by 1 MeV electrons up to at least 2 x 10 to the 16th power electrons/sq cm. Eleven, unencapsulated, 1 sq cm cells deposited on alumina substrates were irradiated with 1 MeV protons at normal incidence. The cells were exposed to six fluences ranging from 2.5 x 10 to the 10th power protons/sq cm to 5.0 x 10 to the 13th power protons/sq cm. After each interval of exposure, the cells were removed from the radiation chamber to undergo current/voltage characterization. It is shown that none of the cells electrical characteristics exhibited any degradation up to and including a fluence of 1 x 10 to the 11th power protons/sq cm. At fluences greater than this, the damage to the CuInSe2 cells V sub oc and fill factor (FF) was more severe than that exhibited by the Isc. The CuInSe2 cells proved to be approximately a factor of 50 more resistant to 1 MeV proton irradiation than silicon or gallium arsenide cells. Annealing of a CuInSe2 cell at 225 deg C for 6 minutes restored it to within 95% of its initial efficiency.

Dursch, H.↗
NASA NTRS1983

Late skin damage in rabbits and monkeys after exposure to particulate radiations

Preliminary results are reported of experiments on the late effects of exposure to particulate radiations on stem cell populations. Skin biopsies were taken from the ears of rabbits irradiated 2-5 years previously with 530 MeV/amu Ar ions (LET 90 keV/micron), or 365 MeV/amu Ne ions (LET 35 keV micron), and from the chests and inner thighs of rhesus monkeys irradiated 16-18 years previously with 32-MeV protons (LET about 1.2 keV/micron). Skin fibroblast cultures obtained from the biopsy samples in rabbits were observed to undergo dose-dependent decreases in in vitro life span, with estimated survival curves showing the effects of Ar-ion irradiation to be more severe than those of Ne-ion irradiation. In addition, the healing of the biopsy wound was observed to become slower as radiation dose increased. In the monkey, radiation reduced the average number of fibroblasts at the time of cessation of growth in culture. Results thus demonstrate the capacity of skin sampling to reveal stem cell destruction, and have important implications for astronauts and other persons at risk of particle exposure with regard to healing responses to trauma or surgery.

Bergtold, D. S.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1992

Electron spectroscopy analysis

The Surface Science Laboratories at the University of Alabama in Huntsville (UAH) are equipped with x-ray photoelectron spectroscopy (XPS or ESCA) and Auger electron spectroscopy (AES) facilities. These techniques provide information from the uppermost atomic layers of a sample, and are thus truly surface sensitive. XPS provides both elemental and chemical state information without restriction on the type of material that can be analyzed. The sample is placed into an ultra high vacuum (UHV) chamber and irradiated with x-rays which cause the ejection of photoelectrons from the sample surface. Since x-rays do not normally cause charging problems or beam damage, XPS is applicable to a wide range of samples including metals, polymers, catalysts, and fibers. AES uses a beam of high energy electrons as a surface probe. Following electronic rearrangements within excited atoms by this probe, Auger electrons characteristic of each element present are emitted from the sample. The main advantage of electron induced AES is that the electron beam can be focused down to a small diameter and localized analysis can be carried out. On the rastering of this beam synchronously with a video display using established scanning electron microscopy techniques, physical images and chemical distribution maps of the surface can be produced. Thus very small features, such as electronic circuit elements or corrosion pits in metals, can be investigated. Facilities are available on both XPS and AES instruments for depth-profiling of materials, using a beam of argon ions to sputter away consecutive layers of material to reveal sub-surface (and even semi-bulk) analyses.

Gregory, John C.↗
NASA NTRS2015

The Impact of Radiation Damage on Photon Counting with an EMCCD for the WFIRST-AFTA Coronagraph

WFIRST-AFTA is a 2.4m class NASA observatory designed to address a wide range of science objectives using two complementary scientific payloads. The Wide Field Instrument (WFI) offers Hubble quality imaging over a 0.28 square degree field of view, and will gather NIR statistical data on exoplanets through gravitational microlensing. The second instrument is a high contrast coronagraph that will carry out the direct imaging and spectroscopic analysis of exoplanets, providing a means to probe the structure and composition of planetary systems. The coronagraph instrument is expected to operate in low photon flux for long integration times, meaning all noise sources must be kept to a minimum. In order to satisfy the low noise requirements, the Electron Multiplication (EM)-CCD has been baselined for both the imaging and spectrograph cameras. The EMCCD was selected in comparison with other candidates because of its low effective electronic read noise at sub-electron values with appropriate multiplication gain setting. The presence of other noise sources, however, such as thermal dark signal and Clock Induced Charge (CIC), need to be characterised and mitigated. In addition, operation within a space environment will subject the device to radiation damage that will degrade the Charge Transfer Efficiency (CTE) of the device throughout the mission lifetime. Here we present our latest results from pre- and post-irradiation testing of the e2v CCD201-20 BI EMCCD sensor, baselined for the WFIRST-AFTA coronagraph instrument. A description of the detector technology is presented, alongside considerations for operation within a space environment. The results from a room temperature irradiation are discussed in context with the nominal operating requirements of AFTA-C and future work which entails a cryogenic irradiation of the CCD201-20 is presented.

Peddada, Pavani↗
NASA NTRS1980

Radiation damage in lithium-counterdoped N/P silicon solar cells

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Hermann, A. M.↗
NASA NTRS1974

Proton irradiation of conventional and lithium solar cells - 11-37 MeV

Conventional n/p and lithium solar cells were irradiated with 11- to 37-MeV protons. The energy dependence of the solar cell degradation, calculated from electrical parameters and lifetime measurements, is shown to be very slight. Damage coefficients for the n/p cells are calculated. Annealing characteristics of both the lithium cells and the n/p cells are presented.

Anspaugh, B. E.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1974

Mechanical properties of Skylab thermal shield materials after prolonged ultraviolet irradiation

In response to an emergency request, the mechanical properties of two complex laminate materials, used as thermal shields on the Skylab spacecraft, were investigated. Concern over the prolonged use of these materials in the space environment prompted this investigation. Shields made of both of these materials, popularly called the parasol and the sail types, were taken to the Skylab spacecraft by the original Skylab astronauts. Both were used to restore thermal control after the original control surfaces were damaged during launch. During the tests the tensile properties were measured at anticipated service temperature and after prolonged exposure to increasing degrees of ultraviolet radiation at intensities approaching two solar constants. Some samples received exposures equivalent to 2,350 hours. The performance and degradation of the two materials are presented in terms of orientation, vacuum, and degree of irradiation. In general, the 75-micron (3-mil) parasol laminate showed a decrease in tensile properties as a function of exposure time, while the 200-micron (8-mil) sail laminate was little affected by exposure to the ultraviolet radiation.

Haehner, C. L.↗
NASA NTRS2018

Computational Model Prediction and Biological Validation Using Simplified Mixed Field Exposures for the Development of a GCR Reference Field

The yield of chromosomal aberrations has been shown to increase in the lymphocytes of astronauts after long-duration missions of several months in space. Chromosome exchanges, especially translocations, are positively correlated with many cancers and are therefore a potential biomarker of cancer risk associated with radiation exposure. Although extensive studies have been carried out on the induction of chromosomal aberrations by low- and high-LET radiation in human lymphocytes, fibroblasts, and epithelial cells exposed in vitro, there is a lack of data on chromosome aberrations induced by low dose-rate chronic exposure and mixed field beams such as those expected in space. Chromosome aberration studies at NSRL will provide the biological validation needed to extend the computational models over a broader range of experimental conditions (more complicated mixed fields leading up to the galactic cosmic rays (GCR) simulator), helping to reduce uncertainties in radiation quality effects and dose-rate dependence in cancer risk models. These models can then be used to answer some of the open questions regarding requirements for a full GCR reference field, including particle type and number, energy, dose rate, and delivery order. In this study, we designed a simplified mixed field beam with a combination of proton, helium, oxygen, and iron ions with shielding or proton, helium, oxygen, and titanium without shielding. Human fibroblasts cells were irradiated with these mixed field beam as well as each single beam with acute and chronic dose rate, and chromosome aberrations (CA) were measured with 3-color fluorescent in situ hybridization (FISH) chromosome painting methods. Frequency and type of CA induced with acute dose rate and chronic dose rates with single and mixed field beam will be discussed. A computational chromosome and radiation-induced DNA damage model, BDSTRACKS (Biological Damage by Stochastic Tracks), was updated to simulate various types of CA induced by acute exposures of the mixed field beams used for the experiments. The chromosomes were simulated by a polymer random walk algorithm with restrictions to their respective domains in the nucleus [1]. The stochastic dose to the nucleus was calculated with the code RITRACKS [2]. Irradiation of a target volume by a mixed field of ions was implemented within RITRACKs, and the fields of ions can be delivered over specific periods of time, allowing the simulation of dose-rate effects. Similarly, particles of various types and energies extracted from a pre-calculated spectra of galactic cosmic rays (GCR) can be used in RITRACKS. The number and spatial location of DSBs (DNA double-strand breaks) were calculated in BDSTRACKS using the simulated chromosomes and local (voxel) dose. Assuming that DSBs led to chromosome breaks, and simulating the rejoining of damaged chromosomes occurring during repair, BDSTRACKS produces the yield of various types of chromosome aberrations as a function of time (only final yields are presented). A comparison between experimental and simulation results will be shown.

Hada, M.↗
NASA NTRS1975

Alteration of an annealed and irradiated lunar fines sample by adsorbed water

Apollo 12 lunar fines sample 12070,403 was annealed at 1000 C and subsequently irradiated with a beam of 130 MeV Fe(9+) ions. Adsorptions of nitrogen and water were measured before and after the irradiation. Prior to the irradiation, the fines were nonporous and water had no effect on the physical characteristics of the lunar fines. In contrast, after the irradiation, the interaction with water caused an increase in the specific surface area and created a pore system. These results are definitive evidence that the interaction of water with damage tracks is the prime factor involved in the alteration of lunar fines by adsorbed water.

Holmes, H. F.↗
NASA NTRS1986

Annealing of electron damage in mid-IR transmitting fluoride glass

Damage in ZrF4-BaF2-LaF3 glass induced by high-energy electrons was studied by ESR and optical spectroscopy. An optical absorption band at 314 nm in the irradiated glass annealed rapidly above about 50 C, probably by a second-order reaction at room temperature; the ESR lines annealed very slowly at room temperature.

Bansal, Narottam P.↗