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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Giant room temperature anomalous Hall effect and tunable topology in a ferromagnetic topological semimetal Co 2 MnAl

Weyl semimetals exhibit unusual surface states and anomalous transport phenomena. It is hard to manipulate the band structure topology of specific Weyl materials. Topological transport phenomena usually appear at very low temperatures, which sets challenges for applications. In this work, we demonstrate the band topology modification via a weak magnetic field in a ferromagnetic Weyl semimetal candidate, Co 2 MnAl, at room temperature. We observe a tunable, giant anomalous Hall effect (AHE) induced by the transition involving Weyl points and nodal rings. The AHE conductivity is as large as that of a 3D quantum AHE, with the Hall angle (Θ H ) reaching a record value (tan Θ H = 0.21) at the room temperature among magnetic conductors. Furthermore, we propose a material recipe to generate large AHE by gaping nodal rings without requiring Weyl points. Our work reveals an intrinsically magnetic platform to explore the interplay between magnetic dynamics and topological physics for developing spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of kagome semimetal Mn 3 Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn 3 Ge , an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall/Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D 0 19 Mn 3 Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn 3 Ge films is estimated to be 0.1 μV/K and is comparable to that in ferromagnetic Fe, despite Mn 3 Ge having a weak magnetization of ~ 3.5 m μ B / Mn at room temperature. In this work, the spin-mixing conductance is 90.5 nm – 2 at the Py / Mn 3 Ge interface, and the spin-Hall angle in Mn 3 Ge is estimated to be about eight times of that in Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Acoustoelectric drag current in vanadium oxide films

Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO 3 substrates. Coupling of acoustic waves propagating in LiNbO 3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal–insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO 2 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Pairing and Pair Breaking by Gauge Fluctuations in Bilayer Composite Fermion Metals

We study interlayer pairing of composite fermions in the total $\nu=1/2+1/2$ quantum Hall bilayer as a possible framework for understanding the experimentally observed transition from a compressible state at large layer spacing to a bilayer quantum Hall state at small layer spacing. We consider a model in which the effective interlayer composite fermion pairing interaction mediated by the Chern-Simons gauge fields in the two layers is singular with both attractive (out-of-phase) and repulsive (in-phase) components diverging at low frequency. If only the more singular attractive interaction is included the pairing gap obtained by solving the gap equation is proportional to the inverse of the layer spacing squared. In the so-called local approximation, we find that when the less singular repulsive interactions are also included the pairing gap still falls off as inverse layer spacing squared, consistent with recent analyses, but is strongly suppressed to a degree that may account for the fact that this predicted inverse square dependence is not observed experimentally. The analytically obtained local approximation solutions are then used as a starting point to numerically iterate the full gap equation to assess the validity of the approximation in this limit.

Deng, Haoyun↗
DOE OSTI2020

Quantized thermoelectric Hall effect induces giant power factor in a topological semimetal

Abstract Thermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-saturating thermopower and a quantized thermoelectric Hall conductivity approaching a universal value. Here, we experimentally demonstrate the non-saturating thermopower and quantized thermoelectric Hall effect in the topological Weyl semimetal (WSM) tantalum phosphide (TaP). An ultrahigh longitudinal thermopower $$S_{xx} \sim 1.1 \times 10^3 \, \mu \, {\mathrm{V}} \, {\mathrm{K}}^{ - 1}$$ S x x ~ 1.1 × 1 0 3 μ V K − 1 and giant power factor $$\sim 525 \, \mu \, {\mathrm{W}} \, {\mathrm{cm}}^{ - 1} \, {\mathrm{K}}^{ - 2}$$ ~ 525 μ W cm − 1 K − 2 are observed at ~40 K, which is largely attributed to the quantized thermoelectric Hall effect. Our work highlights the unique quantized thermoelectric Hall effect realized in a WSM toward low-temperature energy harvesting applications.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN

Ternary nitride compound semiconductors have attracted recent attention as electronic materials since their properties can be tuned by cation stoichiometry and ordering. A recently discovered example is MgZrN 2 , a ternary analog to the rock salt semiconductor ScN. MgZrN 2 has a larger bandgap and stronger dielectric response than the binary compound. Polycrystalline thin films of MgZrN 2 have been studied, but demonstration of high-quality growth is still required to establish its suitability for technological applications. Here, we report on epitaxial growth of MgZrN 2 thin films on (100) and (111) MgO substrates and (001) GaN templates. The MgZrN 2 composition is confirmed by Rutherford backscattering spectrometry, showing no oxygen in the film except for a thin surface oxide layer. Epitaxial growth results in MgZrN 2 with x-ray diffraction rocking curves with a full-width at half-maximum in the range of 0.3–3.0°, depending on the substrate. Transmission electron microscopy analysis of the MgZrN 2 film grown on a (111) MgO substrate confirms epitaxial growth and shows a sharp film/substrate interface. In-plane temperature-dependent Hall effect measurements show that the material is an n-type semiconductor with a relatively high concentration ( n 300K ≈ 10 19 –10 20 cm -3 ) of thermally activated electrons. Room-temperature transport measurements show a conductivity of 25 S cm -1 and a Seebeck coefficient of -80 μ V K -1 . Overall, these results provide an important step toward integration of rock salt MgZrN 2 with other technological nitrides for device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Measurements of the quantum geometric tensor in solids

Understanding the geometric properties of quantum states and their implications in fundamental physical phenomena is a core aspect of contemporary physics. The quantum geometric tensor (QGT) is a central physical object in this regard, encoding complete information about the geometry of the quantum state. The imaginary part of the QGT is the well-known Berry curvature, which plays an integral role in the topological magnetoelectric and optoelectronic phenomena. The real part of the QGT is the quantum metric, whose importance has come to prominence recently, giving rise to a new set of quantum geometric phenomena such as anomalous Landau levels, flat band superfluidity, excitonic Lamb shifts and nonlinear Hall effect. Despite the central importance of the QGT, its experimental measurements have been restricted only to artificial two-level systems. Here, in this work, we develop a framework to measure the QGT in crystalline solids using polarization-, spin- and angle-resolved photoemission spectroscopy. Using this framework, we demonstrate the effective reconstruction of the QGT in the kagome metal CoSn, which hosts topological flat bands. Establishing this momentum- and energy-resolved spectroscopic probe of the QGT is poised to significantly advance our understanding of quantum geometric responses in a wide range of crystalline systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

EuAuSb: An odd-parity helical variation of altermagnetism

EuAuSb is a triangular-lattice Dirac semimetal in which a topological Hall effect has been observed to develop in association with a magnetically ordered phase. Our single-crystal neutron diffraction measurements have identified an incommensurate helical order in which individual ferromagnetic Eu 2+ layers rotate in-plane by ∼ 120° from one layer to the next. An in-plane magnetic field distorts the incommensurate order, eventually leading to a first order transition to a state that is approximately commensurate and that is continuously polarized as the bulk magnetization approaches saturation. From an analysis of the magnetic diffraction intensities versus field, we find evidence for a dip in the ordered in-plane moment at the same field where the topological Hall effect is a maximum, and we propose that this is due to field-induced quantum spin fluctuations. Our electronic structure calculations yield exchange constants compatible with the helical order and show that the bands near the Fermi level lose their spin degeneracy via a mechanism similar to that in the collinear altermagnets. In conclusion, we find that, unlike the even symmetry seen in the altermagnets, the spin splitting in EuAuSb has odd-wave symmetry similar to that recently found in a number of coplanar magnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Critical enhancement of the spin Hall effect by spin fluctuations

The spin Hall (SH) effect, the conversion of the electric current to the spin current along the transverse direction, relies on the relativistic spin-orbit coupling (SOC). Here, we develop a microscopic theory on the mechanisms of the SH effect in magnetic metals, where itinerant electrons are coupled with localized magnetic moments via the Hund exchange interaction and the SOC. Both antiferromagnetic metals and ferromagnetic metals are considered. It is shown that the SH conductivity can be significantly enhanced by the spin fluctuation when approaching the magnetic transition temperature of both cases. For antiferromagnetic metals, the pure SH effect appears in the entire temperature range, while for ferromagnetic metals, the pure SH effect is expected to be replaced by the anomalous Hall effect below the transition temperature. We discuss possible experimental realizations and the effect of the quantum criticality when the antiferromagnetic transition temperature is tuned to zero temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Non-Ohmic negative longitudinal magnetoresistance in a two-dimensional electron gas

Negative longitudinal magnetoresistance (NLMR) has been reported in a variety of materials and has attracted extensive attention as an electrotransport hallmark of topological Weyl semimetals. However, its origin is still under debate. Here, we demonstrate that the NLMR in a two-dimensional electron gas can be influenced by the measurement current. While the NLMR persists up to 130 K, its magnitude and magnetic field response become dependent on the applied current below 60 K. The tunable NLMR at low and high currents can be best attributed to quantum interference and disorder scattering effects, respectively. This work uncovers non-Ohmic NLMR in a non-Weyl material and highlights potential effects of the measurement current in elucidating electrotransport phenomena. Here, we also demonstrate that NLMRs can be a valuable phenomenon in revealing the origins of other properties, such as negative MRs in perpendicular magnetic fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Weyl semimetal in the rare-earth hexaboride family supporting a pseudonodal surface and a giant anomalous Hall effect

Rare-earth hexaborides offer a rich tapestry for exploring the interplay of topological orders, magnetism, and electron-correlation effects associated with protected quantum phenomena. Using first-principles modeling, we identify in cerium hexaboride (CeB 6 ) a topological state that harbors a pseudonodal surface (PNS) along with double-Weyl fermions. An analysis of the electronic states in the vicinity of the Fermi level reveals the presence of M z -mirror-symmetry-protected band crossings that involve itinerant (d) and localized (f) states of Ce. These band crossings are found to remain nearly gapless as one goes away from the mirror plane, driving the formation of PNS states. We also demonstrate the presence of coexisting double-Weyl fermions with chiral charges of ±2 on the C 4z rotational axis. By analyzing the Berry curvature field associated with the topological states, we predict that CeB 6 supports a giant anomalous Hall conductivity of -1840Ω -1 cm -1 in the slightly electron-doped regime, which would be larger than the values reported to date in magnetic Weyl semimetals. Our study thus indicates that CeB 6 , which combines ferromagnetic order with topological physics in a heavy-fermion matrix, would provide a promising playground for investigating topological magnetic states with giant anomalous Hall responses.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Edge spin transport in the disordered two-dimensional topological insulator $\mathrm{WTe_2}$

The spin conductance of two-dimensional topological insulators (2D TIs) is not expected to be quantized in the presence of perturbations that break the spin-rotational symmetry. However, the deviation from the pristine-limit quantization has yet to be studied in detail. In this paper, we define the spin current operator for the helical edge modes of a 2D TI and introduce a four-terminal setup to measure spin conductances. Using the developed formalism, we consider the effects of disorder terms that break spin-rotational symmetry or give rise to edge-to-edge coupling. We identify a key role played by spin torque in an out-of-equilibrium edge. We then utilize a tight-binding model of topological monolayer $\mathrm{WTe_2}$ and scattering matrix formalism to numerically study spin transport in a four-terminal 2D TI device. In particular, we calculate the spin conductances and characteristic spin decay length in the presence of magnetic disorder. In addition, we also study the effects of interedge scattering in a quantum point contact geometry. Here we find that the spin Hall conductance is surprisingly robust to spin symmetry-breaking perturbations, as long as time-reversal symmetry is preserved and interedge scattering is weak.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Symmetry-driven persistent spin texture for the two-dimensional nonsymmorphic CdTe and ZnTe crystal structures

In this paper, two nonsymmorphic two-dimensional structures of CdTe and ZnTe are modeled, and using state-of-the-art density functional theory with the group theory of solids, their symmetry-enforced electronic properties are studied. The in-plane ferroelectricity coupled with strong spin-orbit coupling induces a unidirectional out-of-plane Rashba spin-orbit field that can host a momentum-independent uniform spin configuration known as persistent spin texture (PST) at the Brillouin zone center. PST in these structures is found to be robust against external perturbations such as strain, structural distortion, and independent of layer thickness. These unprecedented intrinsic spin transport properties hold utmost importance in spintronics, as the experimental stringent condition of equal Rashba and Dresselhaus constants [Phys. Rev. Lett. 90, 146801 (2003)] is eliminated. The calculated persistent spin helix wavelength of <~5 nm paves the way for developing next-generation nanosized nonballistic spin field-effect transistors compared with micrometer-sized GaAs/AlGaAs quantum wells. Further, these materials exhibit finite spin Hall conductivity at the band edges and hence can be used in ferromagnet-free spin Hall transistors. Although CdTe and ZnTe systems have been widely studied for photocatalysis and solar cell applications over the past few decades, their potential application in spintronic devices has not been explored. Mono/few layers of CdTe and ZnTe synthesized from (110) facets of bulk zinc-blende crystals [Nat. Commun. 3, 1057 (2012)] satisfy all symmetry operations of the nonsymmorphic space group and hence can be considered ideal materials to verify our theoretical results experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Lattice Clifford fractons and their Chern-Simons-like theory

We use Dirac matrix representations of the Clifford algebra to build fracton models on the lattice and their effective Chern-Simons-like theory. As an example, we build lattice fractons in odd D spatial dimensions and their (D+1) spacetime dimensional effective theory. The model possesses an anti-symmetric K matrix resembling that of hierarchical quantum Hall states. The gauge charges are conserved in sub-dimensional manifolds which ensures the fractonic behavior. The construction extends to any lattice fracton model built from commuting projectors and with tensor products of spin-1/2 degrees of freedom at the sites.

Fontana, Weslei↗
DOE OSTI2024

Measurement of the Pion Exclusive Electro-Production Cross-Section in the E12-19-006 Experiment in Hall-C at Jefferson Lab

One of the most effective methods for exploring the transition from hadronic degrees of freedom to quark-gluon degrees of freedom in Quantum Chromodynamics (QCD) is through the investigation of \exclusive" pion and kaon electro-production reactions at various Q2 and ?t values. The E12-19-006 experiment is conducted within the confi?nes of experimental Hall C at the Thomas Jefferson National Accelerator Facility, USA, for such studies. The primary aim of the experiment is to ?first enhance our comprehension of the pion electro-production cross-section and its form factor at Q2 = 0.38 and 0.42 GeV2. This is the fi?rst run period of the E12-19-006 experiment which ran in summer 2019. A more profound understanding of the pion electro-production reaction, 1H(e,e'?+)n, at low Q2 is deemed essential to employ this electro-production reaction (an indirect technique) for the high Q2 studies, thereby delving deeper into the realm of QCD. Consequently, this dissertation presents a thorough analysis of the experimental data acquired in the ?first run period of the E12-19-006 experiment. In pursuit of precision, a series of systematic studies (target boiling correction study, the elastic reaction cross-section measurements, study for determining vari- ous kinematics o?sets, etc.) are conducted to discern the accuracy of the analyzed data, a prerequisite for the use of Rosenbluth separation technique to separate the pion electro-production cross-section terms in t bins. The separated pion electro-production cross-section through the Rosenbluth separation technique is then used to extract the pion electromagnetic form factor. In this dissertation, the pion electro-production cross-section is carefully dissected into its four constituent components: longitudinal (?L), transverse (?T ), longitudinal-transverse (?LT ), and transverse-transverse (?TT ), using the full version of Rosenbluth separation technique for the Q2 = 0.38 GeV2. The technique is simultaneously fi?tted to the unseparated pion electro-production cross-sections at the three values of polarization of the virtual photon (?), i.e., ? = 0.286, 0.629 and 0.781. An iterative process is applied to re?ne the parameters of the model cross-sections until the yield ratio of experimental and Monte Carlo simulation converges. In this study, 21 iterations are conducted to re?ne the model cross-section parameters. The fi?nal pion electro-production cross-section terms are then determined for 7 t bins using the optimized parameters of the model cross-sections.

Kumar, Vijay↗
DOE OSTI2022

Fluid and hybrid simulations of the ionization instabilities in Hall thruster

Low-frequency axial oscillations in the range of 5–50 kHz stand out as a pervasive feature observed in many types of Hall thrusters. While it is widely recognized that the ionization effects play the central role in this mode, as manifested via the large-scale oscillations of neutral and plasma density, the exact mechanism(s) of the instabilities remain unclear. To gain further insight into the physics of the breathing mode and evaluate the role of kinetic effects, a one-dimensional time-dependent full nonlinear low-frequency model describing neutral atoms, ions, and electrons is developed in full fluid formulation and compared to the hybrid model in which the ions and neutrals are kinetic. Both models are quasi-neutral and share the same electron fluid equations that include the electron diffusion, mobility across the magnetic field, and the electron energy evolution. The ionization models are also similar in both approaches. Further, the predictions of fluid and hybrid simulations are compared for different test cases. Two main regimes are identified in both models: one with pure low-frequency behavior and the other one, where the low-frequency oscillations coexist with high-frequency oscillations in the range of 100–200 kHz, with the characteristic time scale of the ion channel fly-by time, 100–200 kHz. The other test case demonstrates the effect of a finite temperature of injected neutral atoms, which has a substantial suppression effect on the oscillation amplitude.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation

Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit — ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering

Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of 8 x 10 4 cm 2 V -1 s -1 in a Ge 0.92 Sn 0.08 , the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of 0.0689$m$ 0 and 13.6 for the effective mass and effective g‐factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential (Δ U alloy = 0.8 eV), that is lower than the value of a fully random alloy (Δ U alloy = 1.4–1.7 eV) potential. The difference in Δ U alloy suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short‐range order, may be responsible and warrants further investigation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗