Composite Material Behavior Under High Electric Fields: II- Material Switches to 'High Current Carrying' State
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Intermittent Switching↗
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MEMS switches having non-metallic crossbeams
A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.
Scardelletti, Maximillian C↗
Wide range multi-channel analog switch
A ten-channel analog switch has been developed as a sample and shape circuit for signals used as inputs to a logarithmic pulse height recording system. The circuit employs a field effect transistor as the switching element. Switching transients are reduced to approximately 2 mV by adding to the gated signal an inverted transient generated by an identical circuit with no signal applied. The circuit is linear to 2% from 3 mV to 10 V.
Levit, L. B.↗
Temperature Tolerant Evolvable Systems Utilizing FPGA Boards and Bias-Controlled Amplifiers
Space missions often require radiation and extreme-temperature hardened electronics to survive the harsh environments beyond Earth's atmosphere. Traditional approaches to preserve electronics incorporate shielding, insulation and redundancy at the expense of power and weight. However, a novel way of bypassing these problems is the concept of evolutionary hardware. A reconfigurable device, consisting of several switches interconnected with analog/digital parts, is controlled by an evolutionary processor (EP). When the EP detects degradation in the circuit it sends signals to reconfigure the switches, thus forming a new circuit with the desired output. This concept has been developed since the mid-l990s, but one problem remains-the EP cannot degrade substantially. For this reason, extensive testing at extreme temperatures (-180 to 120 C) has been done on devices found on FPGA boards (taking the role of the EP), such as the Analog to Digital and the Digital to Analog Converter. The EP is used in conjunction with a bias-controlled amplifier and a new prototype relay board, which is interconnected with 6 G4-FETs, a tri-input transistor-like element developed at JPL. The greatest improvements to be made lie in the reconfigurable device, so future design and testing of the G4-FET chip is required.
Kumar, Nikhil R.↗
Data Converters Performance at Extreme Temperatures
Space missions often require radiation and extreme-temperature hardened electronics to survive the harsh environments beyond earth's atmosphere. Traditional approaches to preserve electronics incorporate shielding, insulation and redundancy at the expense of power and weight. However, a novel way of bypassing these problems is the concept of evolutionary hardware. A reconfgurable device, consisting of several switches interconnected with analog/digital parts, is controlled by an evolutionary processor (EP). When the EP detects degradation in the circuit it sends signals to reconfgure the switches, thus forming a new circuit with the desired output. This concept has been developed since the mid-90s, but one problem remains - the EP cannot degrade substantially. For this reason, extensive testing at extreme temperatures (-180' to 120(deg)C) has been done on devices found on FPGA boards (taking the role of the EP) such as the Analog to Digital and the Digital to Analog Converter. Analysis of the results has shown that FPGA boards implementing EP with some compensation may be a practical solution to evolving circuits. This paper describes results on the tests of data converters at extreme temperatures.
evolvable hardware↗
Surface and allied studies in silicon solar cells
Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.
Lindholm, F. A.↗
Molecular power supply synchronizer second quarterly report, aug. - 31 oct. 1962
Molecular power supply synchronizer - logic, interconnect pattern and method, nonlinear load switch, packaging design, and system fabrication
POWER SUPPLY↗
A Ka-band GaAs monolithic phase shifter
The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
Sokolov, V.↗
Circuit automatically calibrates flowmeter against liquid-level gage reference
Turbine-type flowmeter uses the flow of liquid from a tank with reed-type liquid level switches as a calibration reference. A circuit to generate a reliable gate signal consists of an input and switch identification stage, monostable and bistable multivibrators, and a signal inverter and pulse output stage.
Field, R. J.↗
Voltage reapplication rate control for commutation of thyristors
A circuit for commutating a thyristor (21) by shunting its current for a minimum interval, thereby removing sustaining voltage to said thyristor, then subsequently restoring voltage to said thyristor at a predetermined rate, utilizes a series combination of a commutation electronic switch (22) and an isolated dc voltage supply (23) connected in parallel with the thyristor. The voltage supply is arranged with a polarity that permits the current flowing through the thyristor in one direction to be bypassed through the series combination while the commutation switch is turned on and to reverse bias the thyristor when the commutation switch is fully on. A dv/dt control circuit (24) limits the rate of rise of voltage across the commutation switch (22) as it is turned off in response to a command input signal. The dv/dt control circuit is comprised of a constant current drive (31) and a capacitor (32) connected between the output terminal of the commutation switch and the control input terminal of the commutation switch. The thyristor may be a triac (40) with two commutation switches (42, 43), one for current of each polarity, or with a single commutation switch (55) and a bridge circuit (52-55) for selecting the polarity of the switch (56).
Rippel, Wally E.↗
Starter circuit for an ion engine
A starter circuit particularly suitable for a plasma of an ion engine for a spacecraft includes a power supply having an output inductor with a tap. A switch is coupled to the tap. The switch has a control input. A pulse control logic circuit is coupled to said control input, said pulse control logic circuit controlling said switch to an off state to generate a high voltage discharge.
Cardwell, Jr., Gilbert I.↗
Starter circuit for an ion engine
A starter circuit particularly suitable for a plasma of an ion engine for a spacecraft includes a power supply having an output inductor with a tap. A switch is coupled to the tap. The switch has a control input. A pulse control logic circuit is coupled to said control input, said pulse control logic circuit controlling said switch to an off state to generate a high voltage discharge.
Cardwell, Jr., Gilbert I.↗
CMOS-fabricated ultraviolet light modulator using low-loss alumina piezo-optomechanical photonics
Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores and silicon dioxide cladding have emerged as a promising solution because of alumina’s large optical bandgap and the high quality of films enabled by atomic layer deposition. These properties allow passive, low-loss waveguide operation down to at least 266 nm using multimode widths. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than approximately 100 microseconds, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides and piezoelectric aluminum nitride strain actuators. The platform allows for sub-microsecond switching times, high circuit densities, and cryogenic operation which is desired in many UV PIC applications. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6-nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of 28 V/linewidth, and a hold power of less than 20 nW at one linewidth detuning. This work establishes the foundations for a new class of CMOS-fabricated, rapidly reconfigurable, and low-power UV photonic circuits compatible with wavelengths as low as 225 nm.
Castillo, Zachary A. [Sandia National Laboratories↗
A study of power conditioning and power distribution and components
A comprehensive simulation and analysis performed on the operation of the regulator part of the Charger/Battery/Regulator Module (CBRM) are detailed. The CBRM is utilized as an integral component of the Skylab/Apollo Telescope Mount (ATM) electrical power system and contains a switching mode electronic regulator. Implementing circuit analysis techniques, pertinent voltages and currents are calculated; these, in turn, are incorporated into the regulator system study. Investigation of the turn-on and turn-off times associated with the switching circuitry is performed and an examination is made on these calculations. A simulation model computer program is utilized to generate graphs that relate various CBRM parameters to one another.
Horton, H. M.↗
Design of power electronics for TVC and EMA systems
The EMA systems proposed for future space transportation applications are high power systems operating at voltages up to 270 Vdc and at current levels on the order of hundreds of amperes. The position of the actuator is controlled by modulating the flow of energy from the source to an electric motor with an inverter. Hard-switching of the semiconductor devices in the inverter results in considerable device switching stresses and losses and in the generation of substantial amounts of EMI. Both of these can be reduced by employing zero-voltage-switching (ZVS) techniques in the inverter. This project has focused on the development of a ZVS inverter for the Marshall Space Center EMA prototypes, which utilize brushless dc motors to convert electrical energy to mechanical energy. An inverter which permitted zero-voltage switching and a quasi-PWM operation was selected for study and implementation. A waveshaping circuit is added to the front of a standard three-phase inverter to achieve the desired switching properties. This circuit causes the input voltage of the three-phase inverter to ring to zero where it is clamped for a short period of time. During this zero-voltage period, any of the semiconductor switches in the three-phase inverter are switched on or off at zero voltage resulting in a reduction in switching losses and EMI. The operation of this waveshaping circuit and its interaction with the three-phase inverter are described. The different circuit modes were analyzed using equivalent circuits. Based on this analysis, design relationships were developed for calculating component values for the circuit elements in the waveshaping circuit. Waveforms of various voltages and currents in the waveshaping circuit were plotted and used to determine the ratings of the semiconductors in the waveshaping circuit. The implementation of this inverter are described. Block diagrams for the overall control system and the waveshaping circuit control are presented and discussed. The current control scheme employed in the controller is also described.
Nelms, R. Mark↗
Power supply with optical-isolator control
Power supply consists of several stages, interconnected and programmed for required output. In capacitor charging mode, transistor switches are closed. Last stage is in series with rectifier that prevents current from flowing backward into circuit. In capacitor discharge mode, transistor switches are closed, and voltage delivered to load is sum of voltages across capacitors.
Baker, R. H.↗
Nanoionics-Based Switches for Radio-Frequency Applications
Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.
Nessel, James↗
Study of switching transients in high frequency converters
As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.
Zinger, Donald S.↗