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At least 379 records · Page 21

Superconducting and antiferromagnetic properties of dual-phase V 3 Ga

The binary compound V 3 Ga can exhibit two near-equilibrium phases, the A15 structure that is superconducting and the Heusler D0 3 structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that these two phases are nearly degenerate, being separated in energy by only ±10 meV/atom. Our magnetization measurements on bulk-grown samples show antiferromagnetism and superconducting behavior below 14 K. Overall, these results indicate the possibility of using V 3 Ga for quantum technology devices exploiting the co-existence of superconductivity and antiferromagnetism in a dual-phase material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unipolar arc plasmas on nanostructured tungsten surfaces under perpendicular magnetic field

Abstract Unipolar arcing is an important phenomenon in terms of wall erosion and the subsequent plasma contamination in nuclear fusion devices. In this study, unipolar arc plasmas are experimentally explored under the presence of the external magnetic field perpendicular to a tungsten (W) sample on which a ‘fuzz’ nanostructure surface is formed. It is found that the fuzz layer thickness, d fuzz , plays a dominant role in determining the motion of arc spots, the arc ignition probability, and arc plasma parameters. High-speed imaging reveals that the motion of arc spots becomes more collective, as d fuzz increases. Interestingly, arc spots make a circle while moving outward. With increasing d fuzz , the amount of eroded W atoms increases, as indicated from an observed increase in the total visible emission intensity, while the arc ignition probability is found to drop. The physical mechanisms are discussed, in detail, based on spectroscopic measurements of the electron temperature, obtained from Boltzmann plots of both W I and W II, and the electron density, determined from Stark broadening of W I lines.

Physics↗

Characterization and Optimization of Skipper CCDs for the SOAR Integral Field Spectrograph

We present results from the characterization and optimization of Skipper charge-coupled devices (CCDs) for use in a focal plane prototype for the Southern Astrophysical Research Integral Field Spectrograph (SIFS). We tested eight Skipper CCDs and selected six for SIFS based on performance results. The Skipper CCDs are 6k × 1k, 15 μm pixels, thick, fully depleted, p-channel devices that have been thinned to ~250 μm, backside processed, and treated with an anti-reflective coating. We demonstrate a single-sample readout noise of <4.3 e - rms pixel -1 in all amplifiers. We optimize the readout sequence timing to achieve a readout noise of 0.5 e - rms pixel -1 after 74 non-destructive measurements, which can be accomplished in a region covering 5% of the detector area in a readout time of <4 minutes. We demonstrate single-photon-counting in all 24 amplifiers (four amplifiers per detector) with a readnoise of σ N ~ 0.18 e - rms pixel -1 after N samp = 400 samples, and we constrain the degree of nonlinearity to be ≲1% at low signal levels (0 e - to 50 e - ). Clock-induced charge (CIC) remains an important issue when the Skipper CCD is configured to provide a large full-well capacity. We achieve a CIC rate of <1.45 × 10 -3 e - pixel -1 frame -1 for a full-well capacity of ~900 e - , which increases to a CIC rate of ~3 e - pixel -1 frame -1 for full-well capacities ~40,000-65,000 e - . We also perform conventional CCD characterization measurements such as charge transfer inefficiency (3.44 × 10 -7 on average), dark current (~2 × 10 -4 e - pixel -1 s -1 ), photon transfer curves, cosmetic defects (<0.45% “bad” pixels), and charge diffusion (point-spread function < 7.5 μm) to verify that these properties are consistent with expectations from conventional p-channel CCDs used for astronomy. Furthermore, we provide the first measurements of the brighter-fatter effect and absolute quantum efficiency (≳80% between 450 and 980 nm; ≳90% between 600 and 900 nm) using Skipper CCDs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Illuminating the Material World: Autonomous Microscopy to Understand Order, Disorder, and Everything In Between

Artificial intelligence (AI) holds immense promise for revolutionizing microscopy, yet its widespread adoption has been hindered by challenges ranging from user inexperience to limited model transferability and difficulties in operationalizing machine learning. This presentation showcases our approach to developing practical autonomy for materials discovery, aiming to accelerate the integration of AI into everyday microscopy workflows. As shown in Fig. 1, I will focus on three key areas: understanding order-disorder transitions, quantifying point defects, and achieving truly device-scale microscopy. First, I will demonstrate the power of multi-modal knowledge graphs for integrating diverse microscopy data. By combining imaging, spectroscopy, and diffraction data, these graphs provide a holistic view of material behavior, capturing the intricate relationships between different modalities [1,2]. I will present a case study on how these models illuminate the structural and chemical changes associated with irradiation in oxide thin films, revealing critical insights for designing materials for extreme environments like spaceflight and nuclear energy. Specifically, I will show how multi-modal analysis clarifies the evolution of order-disorder transitions under irradiation, a key factor influencing material performance in these applications. Next, I will address the challenge of quantifying point defects in 2D materials. We demonstrate the application of computer vision and transfer learning to accurately identify and classify various defect types, such as vacancies and substitutional atoms, and to quantify their concentrations. This information is crucial for understanding and tailoring the properties of 2D materials for applications in electronics, optoelectronics, and catalysis. For example, I will show how our models can characterize the topological distribution of point defects in MXene transition metal carbides, providing valuable insights for optimizing their performance in energy storage and separation science. Finally, I will discuss our progress toward autonomous device-scale microscopy [3,4]. We are fundamentally redesigning electron microscopes around the principles of machine reasoning, enabling automation beyond basic tasks like sample navigation and data acquisition to include sophisticated experimental design. This approach paves the way for truly reproducible and massively scaled analysis campaigns. I will emphasize the importance of autonomous microscopy platforms for high-throughput materials discovery and characterization, facilitating the rapid screening of materials for a broad range of applications and accelerating the development of next-generation technologies.

36 MATERIALS SCIENCE↗

Toward Revealing Microcystin Distribution in Mouse Liver Tissue Using MALDI-MS Imaging

Cyanotoxins can be found in water and air during cyanobacterial harmful algal blooms (cHABs) in lakes and rivers. Therefore, it is very important to monitor their potential uptake by animals and humans as well as their health effects and distribution in affected organs. Herein, the distribution of hepatotoxic peptide microcystin-LR (MC-LR) is investigated in liver tissues of mice gavaged with this most common MC congener. Preliminary matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) imaging experiments performed using a non-automated MALDI matrix deposition device and a MALDI-time-of-flight (TOF) mass spectrometer yielded ambiguous results in terms of MC-LR distribution in liver samples obtained from MC-LR-gavaged mice. The tissue preparation for MALDI-MS imaging was improved by using an automated sprayer for matrix deposition, and liver sections were imaged using an Nd:YAG MALDI laser coupled to a 15 Tesla Fourier-transform ion cyclotron resonance (FT-ICR)-mass spectrometer. MALDI-FT-ICR-MS imaging provided unambiguous detection of protonated MC-LR (calculated m/z 995.5560, z = +1) and the sodium adduct of MC-LR (m/z 1017.5380, z = +1) in liver sections from gavaged mice with great mass accuracy and ultra-high mass resolution. Since both covalently bound and free MC-LR can be found in liver of mice exposed to this toxin, the present results indicate that the distribution of free microcystins in tissue sections from affected organs, such as liver, can be monitored with high-resolution MALDI-MS imaging.

59 BASIC BIOLOGICAL SCIENCES↗

Setup and Testing of PSEC5 ASIC Boards

The PSEC5 ASIC is a high-speed waveform sampling chip developed for precise measurements. This report presents the design review, test board configurations, and results from functional validation of the PSEC5 device. Key aspects examined include power integrity, voltage-controlled oscillator (VCO) behavior, SPI register functionality, clock division characteristics, readout performance, and analog biasing response. Tests were conducted across two boards under varied voltage conditions and signal configurations. Notable observations include robust VCO output, SPI communication irregularities, and anomalous readout conditions. The findings support design iterations for improved ASIC operability and firmware integration.

Fahey, Alexander [North Central Coll.]↗

Multi-contrast machine learning improves schistosomiasis diagnostic performance

Schistosomiasis currently affects over 250 million people and remains a public health burden despite ongoing global control efforts. Conventional microscopy is a practical tool for diagnosis and screening ofSchistosoma haematobium, but identification of eggs requires a skilled microscopist. Here we present a machine learning (ML)-based strategy for automated detection ofS. haematobiumthat combines two imaging contrasts, brightfield (BF) and darkfield (DF), to improve diagnostic performance. We collected BF and DF images of urine samples, many of them containingS. haematobiumeggs, during two different field studies in Côte d’Ivoire using a mobile phone-based microscope, the SchistoScope. We then trained separate egg-detection ML models and compared the patient-level performance of BF and DF models alone to combinations of BF and DF models, using annotations from trained microscopists as the gold standard. We found that models trained on DF images, and almost all BF and DF combinations, performed significantly better than models trained on BF images only. When models were trained on images from the first field study (n = 349 patients, 748 images of each contrast), patient-level classification performance on patient images from the second study (n = 375 patients, 752 images of each contrast) met the WHO Diagnostic Target Product Profile (TPP) sensitivity and specificity for the monitoring and evaluation use case (sensitivity for all models and combinations was >75% when evaluated at a confidence score threshold that resulted in specificity >96.5%). When we used images from both field studies for the training set, performance of the models was improved. Overall, this work shows that the use of DF and BF increases the performance of ML models on images from devices with low-cost optics, while retaining the portability, power, and time-to-results of the WHO’s diagnostic TPP. DF requires no additional sample preparation and does not increase the complexity of the imaging system. It thus offers a practical means to improve performance of automated diagnostics forS. haematobiumas well as other microscopy-based diagnostics.

Infectious Diseases↗

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Abstract The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibility inherent to these three-dimensional device geometries necessitates direct measurement of their deformation. Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing mechanisms at different length scales contributing to the deformation. One is consistent with the in-plane elastic relaxation due to the Ge lattice mismatch with the surrounding Si. The second is associated with the out-of-plane layering of the Si and SiGe regions at a length scale of film thickness. Complementary mechanical modeling corroborated the qualitative aspects of the deformation profiles observed across a variety of nanosheet sample widths. However, greater deformation is observed in the SiGe layers of the nanosheets than the predicted distributions. These insights could play a role in predicting carrier mobilities of future devices.

Murray, Conal E. (ORCID:0000000199014290)↗

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗

Growth of GaAs on single-crystal layered-2D Bi 2 Se 3

This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi 2 Se 3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi 2 Se 3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi 2 Se 3 to form Ga 2 Se 3 , which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi 2 Se 3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

14 SOLAR ENERGY↗

A quantum hamiltonian simulation benchmark

Hamiltonian simulation is one of the most important problems in quantum computation, and quantum singular value transformation (QSVT) is an efficient way to simulate a general class of Hamiltonians. However, the QSVT circuit typically involves multiple ancilla qubits and multi-qubit control gates. In order to simulate a certain class of n-qubit random Hamiltonians, we propose a drastically simplified quantum circuit that we refer to as the minimal QSVT circuit, which uses only one ancilla qubit and no multi-qubit controlled gates. We formulate a simple metric called the quantum unitary evolution score (QUES), which is a scalable quantum benchmark and can be verified without any need for classical computation. Under the globally depolarized noise model, we demonstrate that QUES is directly related to the circuit fidelity, and the potential classical hardness of an associated quantum circuit sampling problem. Under the same assumption, theoretical analysis suggests there exists an ‘optimal’ simulation time t opt ≈ 4.81, at which even a noisy quantum device may be sufficient to demonstrate the potential classical hardness.

97 MATHEMATICS AND COMPUTING↗

High-accuracy absolute magnetometry with application to the Fermilab Muon g-2 experiment

We present details of a high-accuracy absolute scalar magnetometer based on pulsed proton NMR. The B-field magnitude is determined from the precession frequency of proton spins in a cylindrical sample of water after accounting for field perturbations from probe materials, sample shape, and other corrections. Features of the design, testing procedures, and corrections necessary for qualification as an absolute scalar magnetometer are described. The device was tested at B = 1.45 T but can be modified for a range exceeding 1–3 T. The magnetometer was used to calibrate other NMR magnetometers and measure absolute magnetic field magnitudes to an accuracy of 19 parts per billion as part of a measurement of the muon magnetic moment anomaly at Fermilab.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

An Adaptive-Importance-Sampling-Enhanced Bayesian Approach for Topology Estimation in an Unbalanced Power Distribution System

The reliable operation of a power distribution system relies on a good prior knowledge of its topology and its system state. Although crucial, due to the lack of direct monitoring devices on the switch statuses, the topology information is often unavailable or outdated for the distribution system operators for real-time applications. Apart from the limited observability of the power distribution system, other challenges are the nonlinearity of the model, the complicated, unbalanced structure of the distribution system, and the scale of the system. To overcome the above challenges, we, in this paper, propose a Bayesian-inference framework that allows us to simultaneously estimate the topology and the state of a three-phase, unbalanced power distribution system. Specifically, by using the very limited number of measurements available that are associated with the forecast load data, we efficiently recover the full Bayesian posterior distributions of the system topology under both normal and outage operation conditions. This is performed through an adaptive importance sampling procedure that greatly alleviates the computational burden of the traditional Monte-Carlo (MC)-sampling-based approach while maintaining a good estimation accuracy. The simulations conducted on the IEEE 123-bus test system and an unbalanced 1282-bus system reveal the excellent performances of the proposed method.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Mass Spectral Imaging to Map Plant–Microbe Interactions

Plant–microbe interactions are of rising interest in plant sustainability, biomass production, plant biology, and systems biology. These interactions have been a challenge to detect until recent advancements in mass spectrometry imaging. Plants and microbes interact in four main regions within the plant, the rhizosphere, endosphere, phyllosphere, and spermosphere. This mini review covers the challenges within investigations of plant and microbe interactions. We highlight the importance of sample preparation and comparisons among time-of-flight secondary ion mass spectroscopy (ToF-SIMS), matrix-assisted laser desorption/ionization (MALDI), laser desorption ionization (LDI/LDPI), and desorption electrospray ionization (DESI) techniques used for the analysis of these interactions. Using mass spectral imaging (MSI) to study plants and microbes offers advantages in understanding microbe and host interactions at the molecular level with single-cell and community communication information. More research utilizing MSI has emerged in the past several years. We first introduce the principles of major MSI techniques that have been employed in the research of microorganisms. An overview of proper sample preparation methods is offered as a prerequisite for successful MSI analysis. Traditionally, dried or cryogenically prepared, frozen samples have been used; however, they do not provide a true representation of the bacterial biofilms compared to living cell analysis and chemical imaging. New developments such as microfluidic devices that can be used under a vacuum are highly desirable for the application of MSI techniques, such as ToF-SIMS, because they have a subcellular spatial resolution to map and image plant and microbe interactions, including the potential to elucidate metabolic pathways and cell-to-cell interactions. Promising results due to recent MSI advancements in the past five years are selected and highlighted. The latest developments utilizing machine learning are captured as an important outlook for maximal output using MSI to study microorganisms.

59 BASIC BIOLOGICAL SCIENCES↗

Magnetic force microscopy revealing long-range room temperature stable molecule bridge-induced magnetic ordering on magnetic tunnel junction (MTJ) pillars

Magnetic tunnel junctions (MTJs) can integrate novel single molecular device elements to overcome long-standing fabrication challenges, thus unlocking their novel potential. This study employs magnetic force microscopy (MFM) to demonstrate that organometallic molecules, when placed between two ferromagnetic electrodes along cross-junction shaped MTJ edges, dramatically altered the magnetic properties of the electrodes, affecting areas several hundred microns in size around the molecular junction vicinity at room temperature. These findings are supported by magnetic resonance and magnetometer studies on ∼7000 MTJ pillars. MFM on the pillar sample showed an almost complete disappearance of the magnetic contrast. The spatial magnetic image suggests that molecular channels significantly impacted the spin density of states in the ferromagnetic electrodes. This advancement in MTJ-based molecular devices paves the way for a new generation of commercially viable logic and memory devices controlled by molecular quantum states at near-room temperatures.

Tyagi, Pawan (ORCID:0000000275411344)↗

Surface chemistry of neutron irradiated tungsten in a high-temperature multi-material environment

Deuterium retention was measured on neutron irradiated tungsten samples where one side of the samples had a visually clean metallic luster and the opposite side appeared to have a reacted surface film. Deuterium plasma exposure and subsequent thermal desorption from the reacted surface side produced spectra with larger total deuterium desorption at lower temperatures than from the clean surface side. For neutron irradiation, these W disk samples were installed in an irradiation capsule in such a way that one side of W sample was in contact with the surface of another W sample, and the opposite side was in contact with a SiC temperature monitor. The composition of the reacted surface was investigated using X-ray photoelectron spectroscopy and showed that SiC had interdiffused into the W samples. Neutron enhanced diffusion likely contributed to this as SiC and W are stable at temperatures exceeding the irradiation temperature. Results highlight the need to consider the surface chemistry of samples in drawing conclusions on hydrogen isotope retention of W materials and also illustrate the complexity of multi-material nuclear environments expected in fusion devices.

36 MATERIALS SCIENCE↗

High- Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO 2

Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. In this work, we developed an integrated photonics platform based on templated atomic layer deposition of TiO 2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.

42 ENGINEERING↗

A transmission electron microscopy study of dislocation propagation and filtering in highly mismatched GaSb/GaAs heteroepitaxy

Monolithic integration of lattice-mismatched semiconductor materials opens up access to a wide range of bandgaps and new device functionalities. However, it is inevitably accompanied by defect formation. A thorough analysis of how these defects propagate and interact with interfaces is critical to understanding their effects on device parameters. In this study, we present a comprehensive study of dislocation networks in the GaSb/GaAs heteroepitaxial system using transmission electron microscopy (TEM). Specifically, the sample analyzed is a GaSb film grown on GaAs using dislocation–reduction strategies such as interfacial misfit array formation and introduction of a dislocation filtering layer. Using various TEM techniques, it is shown that such an analysis can reveal important information on the dislocation behavior including filtering mechanism, types of dislocation reactions, and other interactions with interfaces. A novel method that enables plan-view imaging of deeply embedded interfaces using TEM and a demonstration of independent imaging of different dislocation types are also presented. While clearly effective in characterizing dislocation behavior in GaSb/GaAs, we believe that the methods outlined in this article can be extended to study other heteroepitaxial material systems.

36 MATERIALS SCIENCE↗