Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon Carbide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Transformational Challenge Reactor Safety Design and Radionuclide Retention Strategy

An integrated safety design and radionuclide (RN) retention strategy is developed to support the Transformational Challenge Reactor (TCR) demonstration. This demonstration aims to showcase viability for rapid deployment of a novel reactor by leveraging the advances in materials, manufacturing, and computational sciences through a highly integrated and agile design and development approach. This strategy provides a logical description and understanding of how RNs are contained within the facility. Rather than discussing fission product barriers individually between separate design and safety basis reports, this paper provides a consistent description and narrative to better facilitate regulatory interactions and focus safety design efforts. The principal barriers credited include the various coating layers in the tristructural isotropic (TRISO) fuel particle, the silicon carbide (SiC) matrix hosting the particles within the fuel element, the helium pressure boundary, and the confinement system. The choice and assumed performance of the credited barriers are highly conservative, which is a direct reflection of the low hazard that the TCR demonstration presents and the need to simplify and focus the safety review process accordingly. However, the strategy and the associated framework are generalized and may be adopted and tailored to support other advanced reactor demonstration efforts.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2022

Ordered Particle Packing in Dense TRISO/SiC Fuel Elements and Preliminary Assessment of Neutronic and Thermomechanical Characteristics

Detailed analysis of the particle distribution in Transformational Challenge Reactor fuel elements indicates that particle packing is not random; instead, it follows a relatively ordered structure near fuel element surfaces. Discrete particle neutronic simulations indicate that the core reactivity is not impacted when assuming homogenization of particles with the silicon carbide matrix. However, the neutronic power distribution resulting from the ordered packing structure indicates that the highest-power particles reside at the top and bottom of the fuel elements and nearest the YH 1.85 moderator rods. The power distribution results were applied to thermo-mechanical simulations using mesh-based power distributions. Previous results indicated high stress at the bottom of the fuel element, where packing is most ordered. Additionally, to reduce this stress concentration, additively manufactured protrusions were added to the bottom of a test fuel element to disrupt dense particle packing. These protrusions reduced the overall power peaking, but the thermomechanical simulations did not indicate a significant change in the fuel element’s maximum stress or failure probability.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Stress Profile in Coating Layers of TRISO Fuel Particles in Contact with One Another

This work presents a discussion on a series of finite element analyses that assess stress evolution in the coating layers of tristructural isotropic (TRISO) particles in contact with each other while embedded in a matrix. The initial simulations were of applied uniaxial pressure versus matrix elastic modulus. These simulations predicted increasing stress in the silicon carbide coating layers of the TRISO particles with decreasing matrix elastic modulus. The second set of simulations focused on the effects of heating and cooling and the associated dimensional change on the state of stress in the coating layers. The general finding was that there was no significant difference below the coating layer’s deposition temperature. Although, above the deposition temperature, the contacting particles had higher stress compared with those that were separated. The third set of simulations focused on the effects of irradiation, specifically, creep, dimensional change, and swelling. An interface debonding model was introduced since these potential effects have a significant bearing on predicted stresses.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Coolant Channel Design for Additively Manufactured Reactor Cores

Additive manufacturing (AM) methods are currently being explored for applications in nuclear reactors to make advanced reactors more efficient, safe, and reliable. The Transformational Challenge Reactor (TCR) program has explored AM for nuclear by designing a high-temperature gas reactor (HTGR) using an AM silicon carbide fuel form with uranium nitride–tristructural isotropic fuel. In this study, we detail the design process for the TCR fuel form’s coolant channels using computational fluid dynamics models with conjugate heat transfer. Additionally, this work discusses how these models were interfaced with other design teams, project milestones, and the agile design method used to mature the reactor design. The methodology deployed was able to create a channel design with lower maximum fuel temperatures and thermal stresses in the fuel form over traditional channel designs that can be manufactured subtractively. These results were achieved with only small manufacturing penalties. Results are discussed and presented on lessons learned for designing AM components for nuclear reactors. Finally, areas of opportunity are discussed for advanced design tools to further automate design activities and optimize reactors with fewer built-in assumptions.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2023

Preliminary Neutronics Design and Analysis of the Fast Modular Reactor

General Atomics is developing a new 100-MW(thermal) fast modular reactor (FMR) that provides safe, carbon-free electricity and is capable of incremental capacity additions. The modular design allows it to be factory built and assembled onsite to keep the capital cost low, while the use of dry cooling facilitates siting to complement renewables in nearly any location. The FMR uses high-assay low-enriched uranium-dioxide fuel encapsulated by recognized irradiationresistant silicon carbide composite (SiGA®) cladding that is derisked in the current accident-tolerant fuel program. The FMR fuel assembly is a hexagonal fuel bundle of 120 fuel rods. The total length of the fuel assembly is less than 4 m, with an active fuel length of 1.8 m. The fuel assemblies are configured in an annular core that is located and supported by the reactor internals. The coolant material is helium at a normal operating pressure of 7 MPa. The core is surrounded by zirconium silicide (Zr 3 Si 2 ) and graphite reflector blocks. The fuel, coolant, internals, and reflectors are contained within a reactor pressure vessel. Here, the preliminary nuclear design and analysis established the arrangement of the active core and reflector blocks. The nuclear design analyses of the FMR defined the design parameters, such as fuel enrichments, excess reactivity, fueling scheme, fuel cycle, power distribution, and control rod worth. The preliminary conceptual design determined the three-batch fueling scheme with the allowable total power peaking factor of 1.5. The average discharge burnup is 100 GW days per ton of uranium.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2023

TRISO Burnup-Dependent Failure Analysis of a HTGR Design-Basis Accident Using BISON

Here, this work assesses the failure behavior of the silicon carbide (SiC) layer in TRIstructural ISOtropic (TRISO) fuel particles with BISON during both steady-state and transient conditions for the MHTGR-350 design by General Atomics. A one-dimensional BISON model for a uranium oxycarbide–bearing TRISO is developed to simulate a power level of 50 mW/particles up to 12.4% fissions per initial metal atom (FIMA). Stress predictions for the materials of interest are presented as a function of burnup, along with the SiC failure probability computed using Weibull statistics under the assumption of realistic SiC quality.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

A Standardized Analysis Process Using Digital Image Correlation to Calculate In Situ Cladding Strain from Modified Burst Tests for Fuel Performance Code Validation

Historical data collection on nuclear fuel cladding materials has focused on generating a statistically significant amount of data to assess the material and its failure behavior. Furthermore, data generated to support material model and failure criteria development were previously posttest evaluations, so a large number of tests was required to gain new understanding. A way to expedite this process is to develop techniques capable of generating large, high-fidelity data sets from a single test with lower uncertainty or quantified uncertainty. One such example of this approach is Oak Ridge National Laboratory’s use of modified burst tests (MBTs) to analyze the mechanical behavior and failure conditions of cladding during a simulated reactivity-initiated accident (RIA). Each test incorporates digital image correlation (DIC) analysis techniques that are used to assess the accumulated strain in situ, as well as eventual cladding failure. This work has been fruitful in defining strain-to-failure conditions for materials like silicon carbide (SiC) fiber–reinforced/SiC matrix composite tubes (SiC/SiC), iron-chromium-aluminum (FeCrAl) alloy tubes, and chromium-coated Zircaloy-4 tubes. However, there are numerous DIC software available, including open-source and proprietary software. The different DIC software use various algorithms to process images and calculate displacement values. Using these different software and algorithms can lead to varying results, and perhaps larger-than-expected uncertainties. In the present study, previously published MBT data encompassing a variety of test conditions were reanalyzed with two different DIC software to assess the variance in the calculated strain results. The data consisted of SiC/SiC, FeCrAl, and chromium-coated Zircaloy-4 tubes. Plots of the calculated strains during the transient revealed good agreement between the two DIC software. The average root-mean-square errors between the two software was 0.20% strain, which is slightly larger than a previously reported error value for these tests. In conclusion, this variance in results is low enough that this analysis method can be used for code validation.

Reactivity-initiated accident↗
DOE OSTI2026

Perturbative second-order optical susceptibility of bulk materials: a symmetry-enforced return to non-orthogonal localized basis sets

The second-order optical susceptibility of semiconductors $\chi^{(2)}_{ijk}(-2\omega;\omega,\omega)$ finds application in metrology, spectroscopy, telecommunications, material characterization, and quantum information. Pioneering calculations of $\chi^{(2)}_{ijk}(-2\omega;\omega,\omega)$ utilized non-orthogonal Gaussian orbitals centered at atoms. That formulation transitioned into plane-wave-based algorithms as time went by. As of late, nevertheless, multiple tools for calculating optical susceptibilities have recast the problem using Wannier (i.e. localized) orbitals, making a comeback onto frameworks based on localized basis sets. Here, in this work, we present an approach for calculating $\chi^{(2)}_{ijk}(-2\omega;\omega,\omega)$ reliant on numerical pseudo-atomic orbitals (PAOs) within perturbation theory in the velocity gauge. Its salient feature is a calculation of ‘Slater–Koster-like’ two-center integrals of the momentum operator in between PAOs identified by symmetry. The approach was successfully tested on paradigmatic cubic silicon carbide (3C-SiC) and gallium arsenide, for which linear responses are contributed as well.

Huamán, Angiolo [Univ. of Arkansas, Fayetteville, ↗
DOE OSTI2023

Deterministic nanoscale quantum spin-defect implantation and diffraction strain imaging

Abstract Local crystallographic features negatively affect quantum spin defects by changing the local electrostatic environment, often resulting in degraded or varied qubit optical and coherence properties. Few tools exist that enable the deterministic synthesis and study of such intricate systems on the nano-scale, making defect-to-defect strain environment quantification difficult. In this paper, we highlight state-of-the-art capabilities from the U.S. Department of Energy’s Nanoscale Science Research Centers that directly address these shortcomings. Specifically, we demonstrate how complementary capabilities of nano-implantation and nano-diffraction can be used to demonstrate the quantum relevant, spatially deterministic creation of neutral divacancy centers in 4H silicon carbide, while investigating and characterizing these systems on the ≤ 25 nm scale with strain sensitivities on the order of 1 × 10 − 6 , relevant to defect formation dynamics. This work lays the foundation for ongoing studies into the dynamics and deterministic formation of low strain homogeneous quantum relevant spin defects in the solid state.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Comprehensive new insights on the potential use of SiC as plasma-facing materials in future fusion reactors

Abstract The performance of silicon carbide as an alternative plasma facing material (PFM) was studied at various irradiation conditions relevant to ion energies and fluxes of a fusion reactor. This analysis involves detailed modeling of subsurface plasma/material interactions, sputtered particle transport above the surface and redeposition, and related changes in material composition and microstructure induced by steady-state and Edge Localized Mode ion fluxes. Transition of a crystalline SiC surface to semi-crystalline and amorphous phases was analyzed based on advanced modeling of DIII-D tokamak experiments where SiC was irradiated in single- and multiple- L-mode and H-mode discharges. This analysis shows that displacement damage, particle deposition/redeposition, and D accumulation on the SiC divertor surface can lead to significant microstructural changes that result in enhanced sputtering erosion in comparison with the original crystalline material. However, the resulting total net erosion rate for a full-coverage, advanced tokamak, SiC coated divertor may well be acceptably low. Moreover, the C sputtering yield from the evolved SiC surface can be seven times lower than from a pure graphite surface; this would imply significantly reduced tritium co-deposition rates in a D-T tokamak reactor, compared with a pure carbon surface. It was also determined that chemical sputtering of both C and Si should not result in any noticeable effect on the net erosion, for attached plasma regimes. Our results thus show encouraging results overall for use of SiC as a PFM in tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Atomic force microscopy phase imaging of epitaxial graphene films

Abstract Dynamic mode atomic force microscopy phase imaging is known to produce distinct contrast between graphene areas of different atomic thickness. But the intrinsic complexity of the processes controlling the tip motion and the phase angle shift excludes its use as an independent technique for a quantitative type of analysis. By investigating the relationship between the phase shift, the tip-surface interaction, and the thickness of the epitaxial graphene areas grown on silicon carbide, we shed light on the origin of such phase contrast, and on the complex energy dissipation processes underlying phase imaging. In particular, we study the behavior of phase shift and energy dissipation when imaging the interfacial buffer layer, single-layer, and bilayer graphene regions as a function of the tip-surface separation and the interaction forces. Finally, we compare these results with those obtained on differently-grown quasi free standing single- and bilayer graphene samples.

Lavini, Francesco (ORCID:0000000257223040)↗
DOE OSTI2025

High-throughput spin-bath characterization of spin defects in semiconductors

Detailed knowledge of the local environments of spin defects in semiconductors, such as nitrogenvacancy (NV) centers in diamond or divacancies in silicon carbide, is crucial for optimizing control and entanglement protocols in quantum sensing and information applications. However, at present a direct experimental characterization of individual defect environments is not scalable, as conventional spin-bath measurements are time consuming and difficult to automate. Achieving high-throughput characterization requires short experiments to probe the spin bath. However, with fewer and noisier measurements, the inverse problem of recovering spin-bath properties from measured data becomes ill posed, with multiple spin baths having a high likelihood of yielding the same data. In this work, we present a set of computational tools to resolve the ill-posed inverse problem of recovering the atomic positions and hyperfine couplings of random nuclei surrounding spin defects from sparse, noisy experimental coherence data, which can be obtained in hours. Here, we use a trans-dimensional Bayesian approach that incorporates ab initio data to yield full posterior distributions over nuclear spin environments, enabling robust recovery from limited data. We also provide practical tools and guidelines to determine the limits of detectability for hyperfine couplings under specific dynamical decoupling sequences and sampling conditions. In addition, we demonstrate how the tools developed here, in combination with ab initio simulations of spin baths, can guide the design of efficient experimental protocols for application-specific high-throughput screening. To showcase the utility of our approach, we apply it to design fast dynamical decoupling experiments to characterize the spin baths often individual NV centers in diamond. While the primary focus is on accelerating spin-bath characterization of spin defects, this Bayesian approach also lays the foundation for digital-twin studies of spin defects, where a virtual model of the spin-defect system evolves in real time with ongoing experimental measurements. Together, the set of tools we designed and applied paves the way for scalable deployment of spin defects in semiconductors for quantum sensing and information applications.

Bayesian methods↗
DOE OSTI2022

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Phonon-assisted optical absorption of SiC polytypes from first principles

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have existed for more than 50 years, theoretical investigations of phonon-assisted absorption have been hampered by their excessive computational cost. Here, in this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H, 6H, and 15R), using first-principles approaches based on density functional theory and related techniques. We show that our results agree with experimentally determined absorption coefficients in the spectral region between the direct and indirect band gaps. The temperature dependence of the spectra can be well predicted with taking the temperature dependence of the band gaps into account. Lastly, we compare the spectra obtained with second-order perturbation theory to those determined by the special displacement method and we show that the full consideration of the electronic energy renormalization due to temperature is important to further improve the prediction of the phonon-assisted absorption in SiC. Our insights can be applied to predict the optical spectra of the less common SiC polytypes and other indirect-gap semiconductors in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional scattering mechanisms such as, for example, impurity and grain-boundary scattering. Here, in this paper, we investigate the effect of ionized-impurity scattering on the carrier mobility. We model the analytical impurity potential parameterized from first principles by a collection of randomly distributed Coulomb scattering centers, and we include this relaxation channel into the ab initio Boltzmann transport equation, as implemented in the EPW code. We demonstrate this methodology by considering silicon, silicon carbide, and gallium phosphide, for which detailed experimental data are available. Our calculations agree well with experiments over a broad range of temperatures and impurity concentrations. For each compound investigated here, we compare the relative importance of electron-phonon scattering and ionized-impurity scattering, and we critically assess the reliability of Matthiessen's rule. We also show that an accurate description of dielectric screening and carrier effective masses can improve quantitative agreement with experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Interplay between charge and spin noise in the near-surface theory of decoherence and relaxation of C 3 v symmetry qutrit spin-1 centers

Decoherence and relaxation of solid-state defect qutrits near a crystal surface, where they are commonly used as quantum sensors, originate from charge and magnetic field noise. A complete theory requires a formalism for decoherence and relaxation that includes all Hamiltonian terms allowed by the defect's point-group symmetry. This formalism, presented here for the C 3 v symmetry of a spin-1 defect in a diamond, silicon carbide, or similar host, relies on a Lindblad dynamical equation and clarifies the relative contributions of charge and spin noise to relaxation and decoherence, along with their dependence on the defect spin's depth and resonant frequencies. The calculations agree with the experimental measurements of Sangtawesin [], and corroborate the importance of charge noise. Published by the American Physical Society 2024

Materials Science↗
DOE OSTI2020

Full characterization of ultrathin 5-nm low-k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties

Ultrathin films and multilayers, with controlled thickness down to single atomic layers, are critical for advanced technologies ranging from nanoelectronics to spintronics to quantum devices. However, for thicknesses less than 10 nm, surfaces and dopants contribute significantly to the film properties, which can differ dramatically from that of bulk materials. Therefore, for amorphous films being developed as low dielectric constant interfaces for nanoelectronics, the presence of surfaces or dopants can soften films and degrade their mechanical performance. Here we use coherent short-wavelength light to fully and nondestructively characterize the mechanical properties of individual films as thin as 5 nm within a bilayer. In general, we find that the mechanical properties depend both on the amount of doping and the presence of surfaces. In very thin (5-nm) silicon carbide bilayers with low hydrogen doping, surface effects induce a substantial softening - by almost an order of magnitude - compared with the same doping in thicker (46-nm) bilayers. These findings are important for informed design of ultrathin films for a host of nano- and quantum technologies, and for improving the switching speed and efficiency of next-generation electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Rapid Prototyping Techniques for Organic Direct-Bonded-Copper Power Modules

Organic Direct-Bonded-Copper (ODBC) is a novel packaging technology for power modules which allows higher flexibility in layout design. In this work, a set of rapid prototyping techniques are developed for ODBC modules based on a polyimide dielectric material. These techniques enable fast and low-cost fabrication of modules with 3-Dimensional (3D) layout features. An example half-bridge (HB) silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) module is designed and prototyped using the proposed techniques aiming at ultra-low power loop inductance. Finite element analysis (FEA)-circuit co-simulations results and experimental results validate an approximately 0.71nH power loop inductance for the example module design.

36 MATERIALS SCIENCE↗