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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Solar power satellite

The solar power satellite (SPS) concept, under evaluation by NASA since 1974, is discussed. A typical system providing a total of 10,000 MW of electrical power to the ground receiving stations is considered. Energy conversion systems, including the photovoltaic device category using single-crystal silicon cells, are taken into account, as are the 2.45-GHz microwave power-transmission link and the ground receiver (or rectenna). Concepts involving space construction of the satellite's large structures (5 x 25 km) are described, noting that a process similar to the familiar roll-forming of light sheet metal parts has been adapted to the space environment. Transportation vehicles are discussed, including the Space Shuttle planned to reach 60 flights per year by the mid 1980's. Electrical power forecasts and advanced systems cost projections are analyzed, together with a description of costs estimates. The indirect economics of energy research and development, and the present NASA/DOE SPS program are noted.

Davis, H. P.↗
NASA NTRS1978

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.↗
NASA NTRS1978

The effects of copper and titanium on silicon solar cells

Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.

Salama, A. M.↗
NASA NTRS1979

In situ oxygen conditioning of /001/ MgO thin film substrates for film growth studies by electron microscopy

It was found that the in situ treatment of 001-plane single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver.

Moorhead, R. D.↗
NASA NTRS1979

Transformation pressure of ZnS by a new primary pressure technique

An experiment designed to measure the transformation pressure of zinc sulfide by a primary pressure method using an indentor-anvil system made of single-crystal diamond is discussed. A nonsorting electrode-grid which can be applied directly to the anvil using optical lithography is described, together with the procedures used for positioning.

Ruoff, A. L.↗
NASA NTRS1980

The random walk of a drilling laser beam

The disregistry of holes drilled with a pulse laser beam in 330-micron-thick single-crystal silicon-on-sapphire wafers is examined. The exit positions of the holes were displaced from the hole entrance positions on the opposing face of the wafer, and this random displacement increased with the number of laser pulses required. A model in which the bottom of the drill hole experiences small random displacements during each laser pulse is used to describe the experimental observations. It is shown that the average random displacement caused by each pulse is only a few percent of the hole diameter and can be reduced by using as few laser pulses as necessary while avoiding the cracking and spalling of the wafer that occur with a hole drilled with a single pulse.

Anthony, T. R.↗
NASA NTRS1980

Fracture toughness of silicon

The paper presents a study to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. It is shown that bar specimens cracked by Knoop microhardness indentation and tested to fracture under four-point bending at room temperature were used to determine the fracture toughness values. It is found that the lowest fracture toughness value of single crystal silicon was 0.82 MN/m to the 3/2 in the 111 plane type orientation, although the difference in values in the 111, 110, and 100 planes was small.

Chen, C. P.↗
NASA NTRS1980

Shock effects in olivine and implications for Hugoniot data

New observations of shock deformation in single-crystal olivine are presented for the range in peak pressures from about 16 to 75 GPa. A nonequilibrium model is suggested for the behavior of olivine under shock which explains the densification associated with a mixed-phase region and which is consistent with all available observations, yet which bears little similarity to the equilibrium behavior of olivine at high pressure.

Jeanloz, R.↗
NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗
NASA NTRS1980

Tribological properties of silicon carbide in metal removal process

This paper reviews material properties of adhesion, friction and wear of single-crystal silicon carbide in contact with metals and alloys involved in a metal removal process such as grinding. The tribological properties in the metal removal processes are divided into properties which remove metal by adhesion between sliding surfaces, and metal removal by silicon carbide sliding against a metal, indenting it, and plowing a series of grooves or furrows. The paper also deals with fracture and deformation characteristics of the silicon carbide surface; the adhesion, friction and metal transfer to silicon carbide is related to the relative chemical activity of the metals. Atomic size and content of alloying elements play a dominant role in controlling adhesion and friction properties of alloys. The friction and abrasive wear decrease as the shear strength of the bulk metal increases.

Miyoshi, K.↗
NASA NTRS1980

Verification of elastic-wave static displacement in solids

The solution of the nonlinear differential equation which describes an initially sinusoidal finite-amplitude elastic wave propagating in a solid contains a static-displacement term in addition to the harmonic terms. The static-displacement amplitude is theoretically predicted to be proportional to the product of the squares of the driving-wave amplitude and the driving-wave frequency. The first experimental verification of the elastic-wave static displacement in a solid (the 111 direction of single-crystal germanium) is reported, and agreement is found with the theoretical predictions.

Cantrell, J. H., Jr.↗
NASA NTRS1980

Titanium dioxide antireflection coating for silicon solar cells by spray deposition

A high-speed production process is described for depositing a single-layer, quarter-wavelength thick antireflection coating of titanium dioxide on metal-patterned single-crystal silicon solar cells for terrestrial applications. Controlled atomization spraying of an organotitanium solution was selected as the most cost-effective method of film deposition using commercial automated equipment. The optimal composition consists of titanium isopropoxide as the titanium source, n-butyl acetate as the diluent solvent, sec-butanol as the leveling agent, and 2-ethyl-1-hexanol to render the material uniformly depositable. Application of the process to the coating of circular, large-diameter solar cells with either screen-printed silver metallization or with vacuum-evaporated Ti/Pd/Ag metallization showed increases of over 40% in the electrical conversion efficiency. Optical characteristics, corrosion resistance, and several other important properties of the spray-deposited film are reported. Experimental evidence indicates a wide tolerance in the coating thickness upon the overall efficiency of the cell. Considerations pertaining to the optimization of AR coatings in general are discussed, and a comprehensive critical survey of the literature is presented.

Kern, W.↗
NASA NTRS1981

Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

Vasquez, R. P.↗
NASA NTRS1981

Silicide surface phases on gold

The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

Green, A. K.↗
NASA NTRS1981

Evaluation and verification of epitaxial process sequence for silicon solar-cell production

To achieve the program goals, 28 minimodules were fabricated and tested, using 600 cells made from three-inch-diameter wafers processed by the sequence chosen for this purpose. Of these 600 cells, half were made from epitaxially grown layers on potentially low-cost substrates. The other half were made from commercial semiconductor-grade (SG), single-crystal silicon wafers that served as controls. Cell processing was normally performed on mixed lots containing significant numbers of each of these two types of wafers. After evaluation of the performance of all cells, they were separated by types for incorporation into modules that were to be tested for electrical performance and response to environmental stress. A simplified flow chart displaying this scheme, for quantities representing half of the planned total to be processed, is presented.

Redfield, D.↗
NASA NTRS1981

High efficiency thin-film GaAs solar cells

The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

Zwerdling, S.↗
NASA NTRS1981

Tribological properties and surface chemistry of silicon carbide at temperatures to 1500 C

Silicon carbide surfaces were heated to 1500 C in a vacuum and analyzed at room temperature with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The basic unit of the surfaces was considered as a plane of a tetrahedron of either SiC4 and CSi4 composition. AES spectra were obtained from 250-1500 C, with an analysis depth of 1 nm revealed the presence of little Si and mostly graphite. XPS analysis depth was 2 nm or less, and Si was found in the second 1 nm. Sliding friction tests with single-crystal silicon carbide in contact with iron in a vacuum were characterized by a stock-slip value. The coefficient of friction increased with increasing temperature up to 400 C, then decreased with increasing temperature from 400-600 C. Reheating surfaces to 800 C after preheating them to that temperature produced no changes in AES readings. It is concluded that the maximum density of silicon and silicon-carbide is at 800 C, and the higher the sliding temperature, the more metal that is transferred.

Miyoshi, K.↗
NASA NTRS1981

Anisotropic tribological properties of silicon carbide

The effects of crystallographic orientation on the tribological properties of single-crystal silicon carbide surfaces in contact with various solids are investigated for adhesive and abrasive wear processes. In the adhesive wear process, the adhesion and wear of silicon carbide is found to be markedly dependent on crystallographic orientation. The force resisting shearing fracture of the adhesive bonds at the interface is lower in preferred crystallographic direction of slip. In the abrasive wear process, the 1 0 -1 0 direction on the basal plane of silicon carbide exhibits the lowest coefficient of friction and the greatest resistance to abrasion.

Miyoshi, K.↗