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At least 379 records · Page 21

Atomic-scale control of tunneling in donor-based devices

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Boosting Hydrogenation of CO 2 Using Cationic Cu Atomically Dispersed on 2D γ‐Al 2 O 3 Nanosheets

The continuous development of novel catalytic approaches is crucial for advancing efficient CO 2 hydrogenation processes. Drawing inspiration from single-atom catalysis and 2D materials, we designed a new 2D single-atom catalyst with excellent thermal stability by thermally treating Cu-adsorbed γ-AlOOH nanosheets, which yielded a Cu/γ-Al 2 O 3 catalyst with high activity in the hydrogenation of CO 2 -yielding methanol (CH 3 OH), dimethyl ether (DME), and CO as products. The active Cu sites are monodispersed and highly stable due to their cationic oxidation state and their substitution for pentacoordinated aluminum (Al P ) sites on particle surfaces. This study demonstrates an efficient approach for achieving a high CO 2 hydrogenation rate (30.45 mol mol −1 h −1 ) using a catalyst system that lacks metallic Cu centers, traditionally considered essential for H₂ dissociation, and employs what was previously thought to be an inert metal oxide (γ-Al 2 O 3 ) for CO and CH 3 OH production. Ongoing mechanistic studies aim to elucidate the synergy between cationic Cu single atoms and γ-Al 2 O 3 , a Lewis acid support, in facilitating hydrogen (H 2 ) activation and methanol formation.

2D catalyst↗

Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLSs). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by “surface engineering” (i.e., replacing the uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher intrinsic quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages accelerated neutral atom beam (ANAB) technology at 300 mm wafer scale. This ANAB is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 to 6 nm depending on ANAB process parameters. The modeling of variable-energy x-ray photoelectron spectroscopy data confirms the thickness and compositional control of Nb surface oxide by the ANAB process. Furthermore, these results correlate well with those from transmission electron microscopy and x-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.

36 MATERIALS SCIENCE↗

Development of Automated Atom Probe Tomography capability to study the influence of applied voltage and laser power on the final apparent composition of the analyzed specimen

This study presents the development and implementation of an autonomous Bayesian optimization (BO) framework for controlling and optimizing experimental parameters in Atom Probe Tomography (APT). Using commercial silicon needle samples as a benchmark system, we demonstrate that BO can efficiently navigate the complex parameter space of voltage and laser power to achieve target charge state ratios (specifically Si + /(Si + +Si 2+ )) with minimal experimental evaluations. Our implementation integrates Gaussian Process modeling with the CAMECA atom probe control framework, enabling autonomous adjustment of experimental conditions in real-time. Results show that the algorithm successfully converges to target ratios under different scenarios: maintaining a reference ratio, increasing the ratio (favoring Si 1+ ), and decreasing the ratio (favoring Si 2+ ). The system adapts to specimen evolution during analysis, compensating for changes in apex geometry while maintaining optimization targets. This work establishes a proof of concept for AI-driven optimization in APT, addressing the traditional challenges of manual parameter tuning and paving the way for applications to more complex materials where compositional accuracy is critical.

36 MATERIALS SCIENCE↗

Understanding the Mechanism of Light and Elevated Temperature Induced Degradation of p-type Silicon Solar Cells (Final Report)

Light- and elevated-temperature-induced degradation (LeTID) was first discovered in multicrystalline Si (mc-Si) solar cells and was initially attributed to metal impurities. Later, LeTID was reported in Czochralski (Cz) and float-zone (FZ) Si, and is considered as an important efficiency loss mechanism in p-type passivated emitter rear contact (p-PERC) Cz Si solar cells. LeTID causes ~10% relative and permeant efficiency losses in these cells in warmer climate regions where the module temperature is > 50 °C. Unlike light-induced degradation (LID), which is also observed in p-PERC cells, LeTID is slower and takes weeks to months in the field to saturate. Another difference compared to LID is that regeneration in LeTID proceeds very slowly, and field regeneration could take > 25 years — essentially the life of the module. Unlike B-O defects that are responsible for LID, neither B nor O impurities are directly involved in LeTID. LeTID appears to be unique to p-type Si, and is also observed in Ga-doped Si. Currently, most experimental evidence relates LeTID to the injection of hydrogen present in the dielectric surface passivation layers, such as SiN x and Al 2 O 3 , into the monocrystalline Si (c-Si) bulk during the fast-firing step. The involvement of hydrogen is further strengthened by controlled studies that show that increasing the amount of hydrogen in the dielectric during fast-firing increases the degree of LeTID. Similar to LID, a regeneration process has been discovered for LeTID. Regeneration of LeTID defects occurs when samples are exposed to 2–4 Suns illumination at elevated temperatures of 140–220 °C for 2–15 hr. Given the slower kinetics of LeTID and sample regeneration compared to LID, this poses a challenge for the manufacturing and field reliability of p-PERC cells, which will be the leading photovoltaic technologies over the next decade. Therefore, there is a need to understand LeTID and develop strategies to mitigate this effect. The defect responsible for LeTID has been extensively studied with over 100 publications, but direct spectroscopic evidence of this defect’s structure is lacking. Without an atomistic understanding of the LeTID defect, it is difficult to assess the long-term efficacy of the current industrial mitigation strategies. This, in turn, has implications on energy production for tens of gigawatts of these cells that will be deployed yearly worldwide. Using electron paramagnetic resonance, we identified a defect associated with LeTID with a g-value of 2.006, which we attribute to an Si dangling bond in an extended defect such as a vacancy agglomerate with H possibly within or in close vicinity. These vacancy agglomerates are likely created during the firing process, during which time H atoms are also injected into the bulk from the hydrogenated SiN x dielectric layer. Our atomistic-level insight shows that the LeTID defect can be mitigated by targeted intrinsic defect engineering of the c-Si material through a slower pull rate of the Cz ingot or 1000 °C oxygen ambient processing of the Si wafer to reduce the vacancy concentration. This project was a collaborative effort between the Colorado School of Mines and the National Renewable Energy Laboratory.

14 SOLAR ENERGY↗

Solid-State Sintering of Core-Shell Ceramic Powders Fabricated by Particle Atomic Layer Deposition

The properties of technical ceramics are highly dependent on their microstructure, which evolves during sintering. Sintering is the process by which ceramic parts are subjected to high temperatures to activate chemical diffusion and the consumption of porosity. During the initial stage of sintering, interparticle necks between neighboring particles form and subsequently increase in size, consuming porosity as the particle centers move closer together. To experimentally determine how this process depends on particle surface composition, particle atomic layer deposition (ALD) was used to deposit a thin film of amorphous aluminum oxide (Al2O3) onto yttria-stabilized tetragonal zirconia (3YSZ) particles, producing core-shell structured powders. The uniformity of the Al2O3 film was confirmed with transmission electron microscopy and energy dispersive spectroscopy. Scanning electron microscopy was used to observe microstructural evolution during sintering, and the dihedral angles of Al2O3 and 3YSZ grains were measured to determine the ratio of interfacial energies between the 3YSZ|3YSZ, 3YSZ|Al2O3, and Al2O3|Al2O3 interfaces. Analysis of the densification kinetics revealed that the initial stage of densification is dependent on the material at the surface of the particles (ie, the Al2O3 film) and is controlled by the diffusion of Al3+ cations through Al2O3. Once the Al2O3 film has coalesced, the sintering behavior is controlled by the densification of the core material (3YSZ). Thus, core-shell powders fabricated by particle ALD sinter by a two-step process where the kinetics are dependent on the material present at interparticle contacts.

alumina↗

Evolution of size-selected Pt cluster catalysts on prototypical oxide supports

The current quest for new pathways into sustainable, efficient and durable energy conversion technologies makes the used for a fundamental understanding of the atomic-scale phenomena underlying catalytic processes ever more pressing. In this context, characterizing catalyst particles in situ provides valuable information about the evolution of their composition, structure, oxidation state and charge state during an ongoing process. To disentangle the influence of individual parameters – temperature, pressure, gas composition, cluster size, as well as support acidity, redox state and defect density – it is crucial to control them precisely and separately in experiments. At the example of size-selected Pt n clusters – i.e. sub-nm particles defined to the exact number of atoms – on flat oxide supports, we follow their rich evolution phenomena via (synchrotron-based) X-ray photoelectron spectroscopy (XPS) and scanning tunnelling microscopy (STM) during temperature ramps and in various gas environments. Here, we present our experience with these highly defined, yet complicated-to-create samples in ultra-high vacuum (UHV) and at mbar pressures. We discuss their stability during transport to synchrotrons and under reaction conditions on three prototypical oxide supports and show the various phenomena that can be disentangled. Ptn clusters on the non-reducible silicon dioxide, SiO 2 , remain size-selected and show remarkable stability. Doping strongly influences the size-dependent binding energy shifts and changes the Pt response to oxidative and reaction conditions, which we attribute to different cluster geometries: p-type doping leads to wetting, enhanced sinter resistance and a diminished response to oxidative environments, compared to clusters on n-type doped samples. We compare the system with our previous findings of a similar change in dimensionality for Pt 20 clusters on the reducible ceria, CeO 2 (111), support, induced by modulation of its O vacancy density. The Pt n /CeO 2 system is particularly interesting for strategies to stabilize and redisperse Pt clusters dynamically. Finally, we study the evolution of Pt n clusters on another reducible oxide support, magnetite, Fe 3 O 4 (001), in 0.1 mbar alternating redox conditions at RT and elevated temperature. In analogy to findings previously reported for Pt/TiO 2 (110), the clusters either become encapsulated by a thin oxide film via strong metal–support interaction (SMSI) or deeply buried in the magnetite. Overall, our approach of following the evolution of size-selected clusters on oxide supports leads to fundamental atomic-scale insights on nano-scale catalyst materials, on our path to sustainable, dynamic and self-repairing catalysts.

Falling, Lorenz J. [Technical Univ. of Munich (Ger↗

Diffusion quantum Monte Carlo approach to the polaritonic ground state

Making and using polaritonic states (i.e., hybrid electron-photon states) for chemical applications has recently become one of the most prominent and active fields that connects the communities of chemistry and quantum optics. Modeling of such polaritonic phenomena using ab initio approaches calls for new methodologies, leading to the reinvention of many commonly used electronic structure methods, such as Hartree-Fock, density functional, and coupled cluster theories. Here in this work, we explore the formally exact diffusion quantum Monte Carlo approach to obtain numerical solutions to the polaritonic ground state during the dissociation of the H 2 molecular system. Here, we examine various electron-nuclear-photon properties throughout the dissociation, such as changes to the minimum of the cavity Born-Oppenheimer surface, the localization of the electronic wave function, and the average mode occupation. Finally, we directly compare our results to that obtained with state-of-the-art, yet approximate, polaritonic coupled cluster approaches.

74 ATOMIC AND MOLECULAR PHYSICS↗

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes

Highly selective plasma etching of silicon nitride (Si 3 N 4 ), while not etching silicon dioxide (SiO 2 ), is a critical step in the fabrication of microelectronics devices. In many applications, this etching must be damage-free and isotropic, which then motivates the use of remote plasmas where the reactants interacting with the substrate are dominantly neutral species. In this paper and Paper II, mechanisms for highly selective Si 3 N 4 etching in remote plasmas are discussed based on results from experiments and simulations. It has been shown experimentally that high Si 3 N 4 /SiO 2 etch selectivity (≈380) can be achieved in the downstream effluent of an NF 3 /N 2 /O 2 /H 2 plasma. The authors found that H2 plays a principal role in the reaction mechanism as Si 3 N 4 /SiO 2 selectivity shows a sharp maximum as a function of the H2 flow rate. Based on this observation, and measured densities of F-atoms and H2 in the process chamber, a mechanism of selective Si 3 N 4 /SiO 2 etching is proposed in which HF molecules in vibrationally excited states accelerate etching reactions. A reaction mechanism for NF 3 /N 2 /O 2 /H 2 plasmas and its afterglow was developed to computationally determine the species densities and fluxes on the wafer level, validated by comparing with experimentally measured F-atom and H 2 densities. The calculated species densities and fluxes were used as input to an analytical model of Si 3 N 4 and SiO 2 etching based on the results of quantum chemistry simulations. This paper presents experimental results (etching data and species densities), the reaction mechanism for NF 3 /N 2 /O 2 /H 2 plasmas, and the results of simulations of gas phase chemistry. Quantum chemistry simulations of elementary etching reactions, description of the analytical model of Si 3 N 4 and SiO 2 etching, calculations of the etch rates, and Si 3 N 4 and SiO 2 selectivity with this model are presented in Paper II.

42 ENGINEERING↗

Biomolecular complex viewed by dynamic nuclear polarization solid-state NMR spectroscopy

Solid-state nuclear magnetic resonance (ssNMR) is an indispensable tool for elucidating the structure and dynamics of insoluble and non-crystalline biomolecules. The recent advances in the sensitivity-enhancing technique magic-angle spinning dynamic nuclear polarization (MAS-DNP) have substantially expanded the territory of ssNMR investigations and enabled the detection of polymer interfaces in a cellular environment. This article highlights the emerging MAS-DNP approaches and their applications to the analysis of biomolecular composites and intact cells to determine the folding pathway and ligand binding of proteins, the structural polymorphism of low-populated biopolymers, as well as the physical interactions between carbohydrates, proteins, and lignin. Furthermore, these structural features provide an atomic-level understanding of many cellular processes, promoting the development of better biomaterials and inhibitors. It is anticipated that the capabilities of MAS-DNP in biomolecular and biomaterial research will be further enlarged by the rapid development of instrumentation and methodology.

36 MATERIALS SCIENCE↗

Rapid Generation of a Macroscopic Schrödinger Cat State of Atoms with Parity-Independent Orientation

We show that using the process of one-axis-twist squeezing in an echo configuration, it is possible to control the orientation of the macroscopic magnetic moment of a large number of atoms by manipulating the quantum state of a single atom that is physically isolated from the ensemble. With this control technique, it is also possible to entangle an ensemble with a single atom deterministically, which mimics the thought experiment known as the Schrödinger cat. In addition, this technique would make it possible to generate a mesoscopic Schrödinger cat state for a large number of atoms far more rapidly that the conventional process for generating such a state, with an orientation that is independent of the parity of the number of atoms. Apart from the echo configuration, we have also investigated the behavior of one-axis-twist squeezing for some special values of the squeezing parameter. We find that the squeezing propagator can be expressed as the sum of n rotation operators if the product of n and the squeezing parameter equals pi, where n is a non-zero integer. A direct consequence of this property of one-axis-twist squeezing is that there is a hidden order in a squeezed state generated under this condition even if its Husimi quasi-probability distribution looks irregular.

Li, Jinyang↗

Iron-Imprinted Single-Atomic Site Catalyst-Based Nanoprobe for Detection of Hydrogen Peroxide in Living Cells

Fe-based single-atomic site catalysts (SASCs), with the natural metalloproteases-like active site structure, have attracted widespread attention in biocatalysis and biosensing. Precisely, controlling the isolated single-atom Fe-N-C active site structure is crucial to improve the SASCs’ performance. In this work, we use a facile ion-imprinting method (IIM) to synthesize isolated Fe-N-C single-atomic site catalysts (IIM-Fe-SASC). With this method, the ion-imprinting process can precisely control ion at the atomic level and form numerous well-defined single-atomic Fe-N-C sites. The IIM-Fe-SASC shows better peroxidase-like activities than that of non-imprinted references. Due to its excellent properties, IIM-Fe-SASC is an ideal nanoprobe used in the colorimetric biosensing of hydrogen peroxide (H 2 O 2 ). Using IIM-Fe-SASC as the nanoprobe, in situ detection of H 2 O 2 generated from MDA-MB-231 cells has been successfully demonstrated with satisfactory sensitivity and specificity. This work opens a novel and easy route in designing advanced SASC and provides a sensitive tool for intracellular H 2 O 2 detection.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Atomic-scale insights into topotactic transformations in an extra-large-pore zeolite using time-resolved 3D electron diffraction

Understanding the atomic-scale structural dynamics of phase transformations is crucial for developing materials and tailoring their properties. However, many materials are obtained as polycrystalline powders with large unit cells and/or complex structures, making it challenging to investigate detailed structural changes using conventional X-ray diffraction techniques. Here we employ time-resolved three-dimensional electron diffraction to reveal the topotactic reactions and transformations that convert the extra-large-pore silicate zeolite ECNU-45 into ECNU-46. ECNU-45 features three-dimensional interconnecting 24 × 10 × 10-ring channels, while ECNU-46 consists of one-dimensional 24-ring channels connected to 10-ring pockets. ECNU-45 and ECNU-46 are both examples of pure silicate zeolites with pore openings larger than 22-ring. Our findings indicate changes at six distinct tetrahedral silicon sites, involving atom displacement, addition and removal of framework atoms through bond breakage and formation. This work presents the synthesis of zeolites and also provides atomic-level insights into the dynamic processes of topotactic reactions. Our results have implications for advancing materials engineering and understanding complex solid-state reactions at an atomic scale.

Inorganic chemistry↗

𝐴𝑏 initio density-matrix approach to exciton coherence: Phonon scattering, Coulomb interactions, and radiative recombination

Relaxation processes following light excitation in semiconductors are key in materials-based quantum technology applications. These processes are broadly studied in atomically thin transition-metal dichalcogenides, quasi-two-dimensional excitonic semiconductors in which atomistic design allows for tunable excited-state properties, such as relaxation lifetimes and photoinduced coherence. In this work, we present a density-matrix-based approach to compute exciton relaxation within a many-body ab initio perspective. We expand our previously developed Lindblad density-matrix formalism to capture multichannel electron-hole pair relaxation processes, including phonon and Coulomb scattering as well as radiative recombination, and we study their effect on the time-resolved excited-state propagation. Using monolayer MoSe 2 as a prototypical example, we examine many-body effects on the time-dependent dynamics of photoactive excitations, exploring how the electron-hole pair interactions are reflected in variations of the excitation energy, spectral signature, and state coherence. In conclusion, our method supplies a detailed understanding of exciton relaxation mechanisms in realistic materials, offering a previously unexplored pathway to study excited-state dynamics in semiconductors from first principles.

Band structure methods↗

Optimizing lossy state preparation for quantum sensing using Hamiltonian engineering

One of the most prominent platforms for demonstrating quantum sensing below the standard quantum limit is the spinor Bose–Einstein condensate. While a quantum advantage using several tens of thousands of atoms has been demonstrated in this platform, it faces an important challenge: atom loss. Atom loss is a Markovian error process modeled by Lindblad jump operators, and a no-go theorem, which we also show here, states that the loss of atoms in all spin components reduces the quantum advantage to a constant factor. Here, we show that this no-go theorem can be circumvented if we constrain atom losses to a single spin component. Moreover, we show that in this case, the maximum quantum Fisher information with N atoms scales as N 3/2 , establishing that a scalable quantum advantage can be achieved despite atom loss. Although Lindblad jump operators are generally non-Hermitian and non-invertible, we use their Moore–Penrose inverse to develop a framework for constructing several states with this scaling of Fisher information in the presence of losses. We use Hamiltonian engineering with realistic Hamiltonians to develop experimental protocols for preparing these states. Finally, we discuss possible experimental techniques to constrain the losses to a single spin mode.

74 ATOMIC AND MOLECULAR PHYSICS↗

Machine learning-based multidomain processing for texture-based image segmentation and analysis

Atomic and molecular resolved atomic force microscopy (AFM) images offer unique insights into materials' properties such as local ordering, molecular orientation, and topological defects, which can be used to pinpoint physical and chemical interactions occurring at the surface. Utilizing machine learning for extracting underlying physical parameters increases the throughput of AFM data processing and eliminates inconsistencies intrinsic to manual image analysis, thus enabling the creation of reliable frameworks for qualitative and quantitative evaluation of experimental data. Here, we present a robust and scalable approach to the segmentation of AFM images based on flexible pre-selected classification criteria. The usage of supervised learning and feature extraction allows us to retain the consideration of specific problem-dependent features (such as types of periodical structures observed in the images and the associated numerical parameters: spacing, orientation, etc.). We highlight the applicability of this approach for the segmentation of molecular resolved AFM images based on the crystal orientation of the observed domains, automated selection of boundaries, and collection of relevant statistics. Finally, we outline a general strategy for machine learning-enabled analysis of nanoscale systems exhibiting periodic order that could be applied to any analytical imaging technique

36 MATERIALS SCIENCE↗

Navigating high-dimensional process-structure–property relations in nanocrystalline Pt-Au alloys with machine learning

For decades, materials scientists have relied on the process-structure–property paradigm to guide investigations into material behaviors. Traditional studies often examine a limited number of process-structure–property variables, striving to elucidate mechanisms governing material response. However, this approach is time consuming and can limit exploration, as well as the discovery of process-structure–property relations in novel materials. In this paper, we combined combinatorial sputter deposition and multi-modal high-throughput materials characterization with feedforward neural networks to establish high-dimensional process-structure–property relations in Pt-Au alloys, yielding nanocrystalline alloys with high hardness and low resistivity relevant to electrical contact switch applications. We mapped three indicators of process conditions (composition and two atomic deposition characteristics) onto four indicators of material structure (X-ray diffraction, film thickness, density, and surface roughness) and two indicators of material properties (hardness and resistivity), resulting in 784 unique combinations evaluated over a 13-dimensional space. The neural networks predicted Pt-Au alloys with 18–24 at.% Au, when deposited at specific conditions, to have a nanoindentation hardness up to 7.2 GPa. This high hardness value, comparable to some steels, represents a 3-fold improvement in hardness over “hard gold”, a commonly used electrical contact alloy, while maintaining requisite electrical conductivity. The neural network models provide an avenue to identify expected process windows capable of maximizing material performance.

Electrical contact materials↗