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At least 379 records · Page 21

Narrowing the band gap and suppressing electron–hole recombination in β-Fe 2 O 3 by chlorine doping

Here, the effects of halogen (F, Cl, Br, I, and At) doping in the direct-band-gap β-Fe 2 O 3 semiconductor on its band structures and electron–hole recombination have been investigated by density functional theory. Doping Br, I, and At in β-Fe 2 O 3 leads to transformation from a direct-band-gap semiconductor to an indirect-band-gap semiconductor because their atomic radii are too large; however, F- and Cl-doped β-Fe 2 O 3 remain as direct-band-gap semiconductors. Due to the deep impurity states of the F dopant, this study focuses on the effects of the Cl dopant on the band structures of β-Fe 2 O 3 . Two impurity levels are introduced when Cl is doped into β-Fe 2 O 3 , which narrows the band gap by approximately 0.3 eV. After doping Cl, the light-absorption edge of β-Fe 2 O 3 redshifts from 650 to 776 nm, indicating that its theoretical solar to hydrogen efficiency for solar water splitting increases from 20.6% to 31.4%. In addition, the effective mass of the holes in halogen-doped β-Fe 2 O 3 becomes significantly larger than that in undoped β-Fe 2 O 3 , which may suppress electron–hole recombination.

30 DIRECT ENERGY CONVERSION↗

Hauser-Feshbach Analysis of Fast Neutron-Induced Reactions on Chlorine

Neutron-induced reactions on 35Cl have recently been measured and analyzed in a Hauser-Feshbach framework at Los Alamos National Laboratory. Particular focus has been applied to the “fast” energy range above 100 keV, where these reactions become important for applications like CLYC (Cs 2 LiYCl 6 :Ce) detector characterization and the development of molten chloride fast reactors. However, challenges to applying a purely statistical analysis to this mass range have presented themselves in the form of cross section fluctuations and deviations due to low-mass structure. In this paper, these challenges and their current solutions will be highlighted, as well as preliminary extensions of the analysis to neighboring isotopes and future plans to extend the measurements down to thermal energies.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

High-precision Penning trap mass measurements of neutron-rich chlorine isotopes at the 𝑁 = 28 shell closure

Although it is known that the N = 28 spherical shell closure erodes, the strength of the closure with decreasing proton number Z < 20 is an open question in nuclear structure. Here, in this region of interest, high-precision mass measurements of neutron-rich 43-45 Cl isotopes were performed at the Low Energy Beam and Ion Trap (LEBIT) when coupled to the National Superconducting Cyclotron Lab. The resulting mass excesses (MEs) are ME(⁴³Cl) = -24114.4(1.7) keV, ME(⁴⁴Cl) = -20450.8(10.6) keV, and ME(⁴⁵Cl) = -18240.1(3.7) keV, and improve the uncertainty of these masses by up to a factor of ∼40 compared to the previous values reported in the 2020 Atomic Mass Evaluation. Comparison to ab initio calculations using the Valence-Space In-Medium Similarity Renormalization Group (VS-IMSRG) shows good agreement up to and including the closure.

Erington, H. [Michigan State Univ., East Lansing, ↗

Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine

Addition of oxygen was used to control the in-plasma photo-assisted etching (PAE) of p-type Si(100) and poly-Si in a high density, inductively coupled, Faraday-shielded, Ar/Cl 2 (225/25 SCCM), 60 mTorr plasma. After etching, samples were transferred under vacuum to an UHV x-ray photoelectron spectroscopy chamber for surface analysis. Samples etched under PAE conditions (ion energies below the ionassisted etching, IAE, threshold) had a thicker surface oxide and lower [Cl] surface concentration, when compared to samples etched under IAE conditions (ion energies above the IAE threshold). PAE was found not to be affected by 0.1 or 0.25 SCCM O 2 addition, while etching stopped with more than 0.5 SCCM O 2 addition. IAE with RF power on the sample stage, resulting in -65 V self-bias, was not affected by up to 2 SCCM of oxygen addition but decreased rapidly when more than 5 SCCM O 2 was added to the plasma. These results imply that PAE may be completely suppressed, while IAE occurs unobstructed. The implications of these findings are discussed in view of applications involving continuous wave and pulsed-plasma processes.

36 MATERIALS SCIENCE↗

Deep potential molecular dynamics simulations of ion-enhanced etching of silicon by atomic chlorine

The continued development of plasma-assisted processing techniques requires a fundamental understanding of plasma-surface interactions. Molecular dynamics (MD) simulations have been employed to complement experimental studies and better understand the properties of such systems. Recently, machine learning (ML) methods have enabled the development of ab initio-based interatomic potentials, which can be generalized to complex combinations of multiple atom types. In this work, we use ML potentials developed using the Deep Potential Molecular Dynamics (DeepMD) framework to provide a model of ion-enhanced etching of Si by Cl atoms. We demonstrate the importance of proper selection of the training data set to the accuracy of the DeepMD model and compare our results to MD results using empirical potentials, as well as to experimental measurements. Exposure of undoped Si at 300 K to thermal Cl atoms yields a steady-state Cl coverage of 1.25 monolayers, which is slightly lower than the value obtained in previous experimental studies. Predictions of Si etch yields by simultaneous Cl atom and Ar + ion impacts as a function of ion energy, neutral to ion flux ratio, and angle of incidence of the ions are in reasonably good agreement with classical MD results and experimental measurements. Finally, etch yields and SiCl x mixed layer thicknesses during simultaneous bombardment of the Si(100) surface by Cl atoms and Cl + ions are in good agreement with experimental data. In conclusion, the present work is a necessary condition for the extension of the DeepMD procedure to more complex systems of interest in plasma-surface interactions.

Artificial neural networks↗

Fouling-resistant, chlorine-tolerant zwitterionic membranes for treatment of produced water in the Permian Basin

ZwitterCo, Inc. performed a two-year study on the use of its superfiltration membrane products for the treatment of produced water from the Permian Basin, including pilot testing using actual produced water samples. The results showed a highly competitive techno-economic analysis compared to existing produced water treatment options and show a path towards beneficial reuse of produced water.

04 OIL SHALES AND TAR SANDS↗

Chlorine Worth Study in Support of PF-4 Operations [Slides]

The primary concern of this study is if experiments can be designed/conducted to provide technical justification to NCS in order to increase mass limits. This goal is in direct support of 30 pits per year mission, one of the top priorities for NNSA. The accelerated timeline is as follows: Initial tasking, June 2020; preliminary design completion (CED-1 equivalent), November 2020; final design completion (CED-2 equivalent), March 2021; part receipt and inspection completion (CED-3a equivalent), October 2021; experiment execution (CED-3b equivalent), December 2021; experiment documentation write-up completion (start CED-4a equivalent), January 2022; and ICSBEP target (CED-4a equivalent), Fall 2022.

2019 ARCHIMEDES LDRD project↗

Peening Techniques for Mitigating Chlorine-Induced Stress Corrosion Cracking of Dry Storage Canisters for Nuclear Applications

Fusion-welded austenitic stainless steel (ASS) was predominantly employed to manufacture dry storage canisters (DSCs) for the storage applications of spent nuclear fuel (SNF). However, the ASS weld joints are prone to chloride-induced stress corrosion cracking (CISCC), a critical safety issue in the nuclear industry. DSCs were exposed to a chloride-rich environment during storage, creating CISCC precursors. The CISCC failure leads to nuclear radiation leakage. Therefore, there is a critical need to enhance the CISCC resistance of DSC weld joints using promising repair techniques. This review article encapsulates the current state-of-the-art of peening techniques for mitigating the CISCC in DSCs. More specifically, conventional shot peening (CSP), ultrasonic impact peening (UIP), and laser shock peening (LSP) were elucidated with a focus on CISCC mitigation. The underlying mechanism of CISCC mitigation in each process was summarized. Finally, this review provides recent advances in surface modification techniques, repair techniques, and developments in welding techniques for CISCC mitigation in DSCs.

Chemistry↗