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At least 379 records · Page 21

Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

Electronic-grade GaN (0001) epilayers have been grown directly on Al{sub 2}O{sub 3} (0001) substrates by reactive direct-current-magnetron sputter epitaxy (MSE) using a liquid Ga sputtering target in an Ar/N{sub 2} atmosphere. The as-grown GaN epitaxial films exhibit low threading dislocation density on the order of {<=}10{sup 10} cm{sup -2} determined by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow full-width at half maximum (FWHM) of 1054 arc sec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSE-grown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

36 MATERIALS SCIENCE↗

In‐Operando Spatiotemporal Imaging of Coupled Film‐Substrate Elastodynamics During an Insulator‐to‐Metal Transition

Abstract The drive toward non‐von Neumann device architectures has led to an intense focus on insulator‐to‐metal (IMT) and the converse metal‐to‐insulator (MIT) transitions. Studies of electric field‐driven IMT in the prototypical VO 2 thin‐film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding TiO 2 substrate is often overlooked, since it is nominally expected to be electrically passive and elastically rigid. Here, in‐operando spatiotemporal imaging of the coupled elastodynamics using X‐ray diffraction microscopy of a VO 2 film channel device on TiO 2 substrate reveals two new surprises. First, the film channel bulges during the IMT, the opposite of the expected shrinking in the film undergoing IMT. Second, a microns thick proximal layer in the substrate also coherently bulges accompanying the IMT in the film, which is completely unexpected. Phase‐field simulations of coupled IMT, oxygen vacancy electronic dynamics, and electronic carrier diffusion incorporating thermal and strain effects suggest that the observed elastodynamics can be explained by the known naturally occurring oxygen vacancies that rapidly ionize (and deionize) in concert with the IMT (MIT). Fast electrical‐triggering of the IMT via ionizing defects and an active “IMT‐like” substrate layer are critical aspects to consider in device applications.

36 MATERIALS SCIENCE↗

Study on mechanism of photocatalytic performance of La-doped TiO{sub 2}/Ti photoelectrodes by theoretical and experimental methods

TiO{sub 2} photoelectrodes with various nanostructures have been successfully prepared by the anodization method. The morphology, microstructure and optical properties of as-prepared photoelectrodes were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), ultraviolet/visible light diffuse reflectance spectra (UV/vis/DRS), surface photovoltage spectroscopy (SPS) and photocurrent. The electronic structure and optical properties of La doped/undoped TiO{sub 2} photoelectrodes with different crystal structures were calculated by the density function theory. The photocatalytic and photoelectrocatalytic activities of as-prepared photoelectrodes were evaluated. The results showed that the anodization potentials played a crucial role in the surface morphology and microstructure. Both results of theoretical calculations and experimental tests demonstrated that La-doped photoelectrodes were more sensitive to light than undoped one. The difference of photoelectrodes performance was ascribed to the crystal configuration, impurity energy levels and long-range orientation moving of photogenerated carriers. - Graphical abstract: Photophysical chemistry processes in as-prepared TiO{sub 2} photoelectrodes. Overall scheme of TiO{sub 2} photoelectrodes: (A) movement of photoelectrons and holes without bias potentials; (B) movement of photoelectrons and holes at applied bias potentials; (a) and (b) were the transmission of photogenerated electrons and holes of local enlargement of (A) (black open circle): (a) photoelectrons movement in P-TiO{sub 2} photoelectrodes and La-TiO{sub 2} photoelectrodes, the red dot line denotes the top of valence band (VB) and the bottom of conduction band (CB) of pure photoelectrodes; (b) photoelectrons movement in P-160 and La-160 TiO{sub 2} photoelectrodes (mixed crystal phase). The number refers to as follows: (1) transmission process of photoelectrons and holes; (2) recombination process of photoelectrons and holes. Arrows represent the moving direction of photoelectrons. Highlights: Black-Right-Pointing-Pointer Morphology and structure of La-doped photoelectrodes. Black-Right-Pointing-Pointer Band gap and electric structure of La-doped and undoped photoelectrodes. Black-Right-Pointing-Pointer Optical, PECH, PC and PEC properties of La-TiO{sub 2} photoelectrodes. Black-Right-Pointing-Pointer Transmission process of photoelectron-hole pairs in La-TiO{sub 2} photoelectrodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Imaging in real and reciprocal space at the Diamond beamline I13

The Diamond Imaging and Coherence beamline I13 consists of two independent branchlines for imaging in real and reciprocal space. Different microscopies are available providing a range of spatial resolution from 5µm to potentially 5nm. The beamline operates in the energy range of 6-35keV covering different scientific areas such as biomedicine, materials science and geophysics. Several original devices have been developed at the beamline, such as the EXCALIBUR photon counting detector and the combined robot arms for coherent X-ray diffraction.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Phase relations in a barium-rich high-temperature region (25-45 mol% CuO, 900-1100 deg. C) of the BaO-CuO{sub x} system

The phase relations have been studied in the BaO-CuO{sub x} system in the range of 25.0-45.0 mol% CuO at 900-1100 deg. C at P(O{sub 2})=21 kPa (air) by visual polythermal analysis (VPA), powder X-ray diffraction (XRD), electron diffraction (ED) with simultaneous energy-dispersive X-ray (EDX) elemental analysis in a transmission electron microscope (TEM), and iodometric chemical analysis. The discrete deviations 2.02 (101:50), 2.04 (102:50), 2.10 (105:50) of Ba/Cu (Ba:Cu) composition from the stoichiometric ratio 2:1 have been found for the known Ba{sub 2}CuO{sub 3+{delta}} oxides in the subsolidus region 900-970 deg. C. Unit cell parameters of the 101:50 orthorhombic oxide, 102:50 tetragonal one, 105:50 orthorhombic one are, respectively, a=4.049, b=3.899, c=13.034 A; a=3.985, c=12.968 A; a=4.087, b=3.897 and c=12.950 A. ED patterns of the 101:50, 102:50, 105:50 oxides show characteristic supercell reflections with the respective vector 1/60[5 4 0], {approx}2/11<1 1 0> and 1/6[2 0 0]. Oxides of the 2:1, 7:4, 5:3 and 23:20 compositions have been found in the crystallization region 970-1050 deg. C. Unit cell parameters of the 2:1 orthorhombic oxide are a=4.095, b=3.795, c=13.165 A. Interplanar spacings and X-ray characteristic peak intensities of the 7:4, 5:3 and 23:20 oxides are given. Oxides 2:1 and 7:4 melt pseudocongruently at 1020 and 1005 deg. C, oxides 5:3 and 23:20 melt incongruently at 995 and 980 deg. C, respectively. A diagram of the phase relations in the studied region of the BaO-CuO{sub x} system has been constructed, whose structure is considered as the total projection of phase states of the system existing for different x. - Graphical Abstract: A diagram of phase relations in the BaO-CuO{sub x} system in the range of 30.0-45.0 mol% CuO at 900-1050 deg. C at P(O{sub 2})=21 kPa (air) constructed on the data obtained by visual polythermal analysis (the liquidus line), XRD and ED with elemental analysis. Highlights: > A combination of physical-chemical and structural methods was used. > New discrete oxides have been found. > The diagram reflects the total projection of phase states at different x.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Synthesis of Cu Nanowires with Polycarbonate Template

Copper nanowires were fabricated into arrays of pores on ion-track etched polycarbonate membrane, using electrodeposition technique. We coated Au thin film layer on one side of membrane in order to have electrical contact. X-ray diffraction analysis shows that the Au layer has a strong (111) texture. The pores which have cylindrical shape with 6 micron length and 30 nm diameter were filled by copper atoms, fabricating Cu nanowires. Energy Disperse Spectrometry (EDS) indicated the picks of copper which filled the pores of substrate. The morphology and structure of Cu nanowires were characterized by SEM, TEM and XRD, respectively. The results show that although all the nanowires do not have uniform diameter, but all of them are continuous along the length.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Laguerre–Gauss and Hermite–Gauss soft X-ray states generated using diffractive optics

Light’s capacity to carry angular momentum is integral to our knowledge of physics and ability to probe matter. In addition to spin, photons can occupy free-space orbital angular momentum eigenstates. Visible light orbital angular momentum is used in quantum information experiments, super-resolution microscopy, optical tweezers and angular momentum transfer to atoms in optical lattices. Soft X-ray orbital angular momentum applications, slowed by the lack of suitable optics and the rarity of coherent X-ray sources, could enable the direct alteration of atomic states through orbital angular momentum exchange, and methods to study the electronic properties of quantum materials. We have made soft X-ray diffractive optics that generate single Laguerre–Gauss modes, observed carrying up to 30$\hbar$ angular momentum per photon, or their superpositions. We also present Hermite–Gauss diffractive optics and a soft X-ray orbital angular momentum analyser. Finally, these tools could enable both the manipulation and finer characterization of topologically complex electronic matter, such as magnetic skyrmions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Glancing-incidence focussed ion beam milling: A coherent X-ray diffraction study of 3D nano-scale lattice strains and crystal defects

Here, this study presents a detailed examination of the lattice distortions introduced by glancing incidence Focussed Ion Beam (FIB) milling. Using non-destructive multi-reflection Bragg coherent X-ray diffraction we probe damage formation in an initially pristine gold micro-crystal following several stages of FIB milling. These experiments allow access to the full lattice strain tensor in the micro-crystal with ~25 nm 3D spatial resolution, enabling a nano-scale analysis of residual lattice strains and defects formed. Our results show that 30 keV glancing incidence milling produces fewer large defects than normal incidence milling at the same energy. However the resulting residual lattice strains have similar magnitude and extend up to ~50 nm into the sample. At the edges of the milled surface, where the ion-beam tails impact the sample at near-normal incidence, large dislocation loops with a range of Burgers vectors are formed. Further glancing incidence FIB polishing with 5 keV ion energy removes these dislocation loops and reduces the lattice strains caused by higher energy FIB milling. However, even at the lower ion energy, damage-induced lattice strains are present within a ~20 nm thick surface layer. These results highlight the need for careful consideration and management of FIB damage. They also show that low-energy FIB-milling is an effective tool for removing FIB-milling induced lattice strains. This is important for the preparation of micro-mechanical test specimens and strain microscopy samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reuniting crystallography with real space: Ab initio structure elucidation with 4D-STEM

Structure elucidation via single-crystal methods has historically lacked experimental access to real-space information, instead relying exclusively on diffraction-space measurements of Bragg reflections. Here we exploit the dual-space imaging power of 4D scanning transmission electron microscopy to meaningfully integrate real-space information into the crystallographic workflow. We show that virtual apertures assembled by segmentation of high-angle annular dark-field images enable i) pixel-by-pixel separation of coherent Bragg signal from clusters of closely spaced nanocrystals and ii) selective extraction of integrated intensities from thinner subregions of individual specimens, facilitating retroactive tuning of multiple scattering artifacts. This strategy empowers us to simply pick and choose whichever nanoscale regions of interest generate the highest-quality diffraction patterns, allowing us to solve several independent structures of the metal-organic framework UiO-66 from specimens whose agglomerated morphology proved intractable for conventional microcrystal electron diffraction. Our method is compatible with both rotational and serial approaches to data processing, ultimately divulging the first scanning nanobeam electron diffraction structures determined by direct methods at subangstrom resolution.

Saha, Ambarneil↗

Characterization of Large Grain Nb Ingot Microstructure Using EBSP Mapping and Laue Camera Methods

Large grain/single crystal Nb is currently being examined for fabricating superconducting radiofrequency (SRF) cavities as an alternative to using rolled sheet. Three ingot slices from different suppliers have been characterized and are compared. It is desirable to know the grain orientations of an ingot slice before fabrication. Characterization of an ingot slice has been done using electron backscattered pattern (EBSP) orientation imaging microscopy (OIM), which requires cutting out pieces from the slice, a destructive technique. Use of a Laue camera allows nondestructive characterization of grain orientations. The OIM method was used to examine ingot slices from CBMM and Ningxia, while the Laue method was used to examine a Heraeus ingot slice. The three ingot slices are compared in terms of their crystal orientations and grain boundary misorientations, indicating no obvious commonalities. The Laue method has practical advantages over OIM for evaluating ingot slices during the manufacturing process.

36 MATERIALS SCIENCE↗

Hybrid molecular beam epitaxy of germanium-based oxides

Abstract Germanium-based oxides such as rutile GeO 2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn 1- x Ge x O 2 and SrSn 1- x Ge x O 3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn 1- x Ge x O 2 on TiO 2 (001) substrates up to x = 0.54 and coherent perovskite SrSn 1- x Ge x O 3 on GdScO 3 (110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films.

36 MATERIALS SCIENCE↗

Electrical Properties of Barium and Zirconium Modified NBT Ferroelectric Ceramics

Recently a new wave of interest has risen on relaxor ferroelectrics with complex perovskite structure due to their wide use in fabrication of multilayer ceramic capacitors, electrostrictive actuators, and electromechanical transducers. The polycrystalline 0.93(Bi{sub 0.5}Na{sub 0.5})Ba{sub 0.07}Z{sub 0.04}T{sub 0.96}O{sub 3}(0.07BNBZT) ceramic material, which is in the vicinity of the morphotropic phase boundary (MPB) has been prepared by using high temperature solid state reaction method. The tolerance factor has been estimated and found to be 0.815. XRD analysis revealed a rhombohedral perovskite type structure. SEM micrographs showed highly dense grains with rectangular shape. The average grain size is found to be 1.51{mu}m. Dielectric studies in the material ha indicated relaxor behaviour with diffuse phase transition. High value of {epsilon}{sub m}>1958 is found at 1kHz, Tm (phase transition temperature) 335 deg. C, The diffuseness parameter was established to be 1.60 revealing the relaxor behaviour. Further, to confirm the relaxor behaviour in the material, Vogel-Fulcher (V-F) relation has been used. Estimated V-F parameters are found to be T{sub f} = 138 deg. C, E{sub a} = 0.080 eV and {nu}{sub o} = 2.32x10{sup 8} Hz. Cole-Cole analysis has shown a non-Debye type relaxation in the system. Conductivity studies in the material obeyed the Jonscher's power law in frequency range of (45Hz-5MHz) and temperature range of (35 deg. C - 600 deg. C). The electric conduction in the system may be due to hopping/mobility/ transportation of charge carriers.

36 MATERIALS SCIENCE↗

Ternary Feldspar Within Felste Clasts From Apollo Impact Melt Breccia 72255

Granitic clasts with unique ternary feldspar compositions have been identified within samples of the layered impact melt breccia from Apollo 17 Station 2 Boulder 1 (72215, 72235, 72255 and 72275), and in a felsite clast from station 3 (73215). These “ternary” compositions seemingly plot within the miscibility gap of the albite-anorthite-orthoclase (Ab-An-Or) system. Feldspars with these compositions have not been identified in terrestrial samples, and equilibrium feldspar compositions from laboratory experiments indicate they would not be thermodynamically stable. Thus, the physiochemical processes involved in forming these unique ternary feldspars remain poorly understood. To better constrain the formation of ternary feldspar within lunar breccias, we have undertaken a coordinated scanning electron microscope (SEM)-based coupled electron backscatter diffraction (EBSD) and energy dispersive spectrometry (EDS), electron microprobe analyzer (EPMA) wavelength dispersive spectrometry, and transmission electron microscopy (TEM) study. The goals of this study are twofold: 1) confirm whether ternary feldspar is present as coherent, single-crystals or sub-microscopic intergrowths of normal compositions, and 2) better constrain the formation conditions of clasts containing ternary feldspar.

T. M. Erickson↗

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells

InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core–shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here, in this study, we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In 0.2 Ga 0.8 As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core–shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Three dimensions, two microscopes, one code: Automatic differentiation for x-ray nanotomography beyond the depth of focus limit

Conventional tomographic reconstruction algorithms assume that one has obtained pure projection images, involving no within-specimen diffraction effects nor multiple scattering. Advances in x-ray nanotomography are leading toward the violation of these assumptions, by combining the high penetration power of x-rays, which enables thick specimens to be imaged, with improved spatial resolution that decreases the depth of focus of the imaging system. We describe a reconstruction method where multiple scattering and diffraction effects in thick samples are modeled by multislice propagation and the 3D object function is retrieved through iterative optimization. We show that the same proposed method works for both full-field microscopy and for coherent scanning techniques like ptychography. Our implementation uses the optimization toolbox and the automatic differentiation capability of the open-source deep learning package TensorFlow, demonstrating a straightforward way to solve optimization problems in computational imaging with flexibility and portability.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Structural Changes as a Function of Thickness in [(SnSe) 1+δ ] m TiSe 2 Heterostructures

Single- and few-layer metal chalcogenide compounds are of significant interest due to structural changes and emergent electronic properties on reducing dimensionality from three to two dimensions. To explore dimensionality effects in SnSe, a series of [(SnSe) 1+δ ] m TiSe 2 intergrowth structures with increasing SnSe layer thickness (m = 1-4) were prepared from designed thin-film precursors. In-plane diffraction patterns indicated that significant structural changes occurred in the basal plane of the SnSe constituent as m is increased. Scanning transmission electron microscopy cross-sectional images of the m = 1 compound indicate long-range coherence between layers, whereas the m >/= 2 compounds show extensive rotational disorder between the constituent layers. For m >/= 2, the images of the SnSe constituent contain a variety of stacking sequences of SnSe bilayers. Density functional theory calculations suggest that the formation energy is similar for several different SnSe stacking sequences. The compounds show unexpected transport properties as m is increased, including the first p-type behavior observed in (MSe)m(TiSe 2 ) n compounds. The resistivity of the m >/- 2 compounds is larger than for m = 1, with m = 2 being the largest. At room temperature, the Hall coefficient is positive for m = 1 and negative for m = 2-4. The Hall coefficient of the m = 2 compound changes sign as temperature is decreased. The room-temperature Seebeck coefficient, however, switches from negative to positive at m = 3. These properties are incompatible with single band transport indicating that the compounds are not simple composites.

36 MATERIALS SCIENCE↗

Studies on Stuctural and Electrical Properties of (1-X)Ba(Fe{sub 0.5}Nb{sub 0.5})O{sub 3}-xSrTiO{sub 3}, with X = 0, 0.05 Ceramics

A polycrystalline ceramics of (1-x)Ba(Fe{sub 0.5}Nb{sub 0.5})O{sub 3}-xSrTiO{sub 3}, with x = 0, 0.05 was synthesized by high temperature solid-state reaction technique. X-ray diffraction analysis of the powders suggests the formation of a single-phase material with monoclinic structure. SEM images exhibit the uniform distribution of grains of the sample. Sintered pellets were investigated for its dielectric ({epsilon} and tan{delta}) properties in the temperature range of 30 deg. C - 270 deg. C and in the frequency range of 100Hz-5MHz suggest that the compound do not have dielectric anomaly in the studied frequency and temperature ranges.

36 MATERIALS SCIENCE↗