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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Enhancing Oxygen Stability in Low-Cobalt Layered Oxide Cathode Materials by Three-Dimensional Targeted Doping

In this project, we propose to develop a new concept and a generic platform that can lead to the greatly enhanced stabilization of all high-energy cathode materials, and in particular high-nickel (Ni) and low-cobalt (Co) oxides. The new concept is a 3D doping technology that hierarchically combines surface and bulk doping. We will use surface doping to stabilize the surface of primary particles and also introduce dopants in the bulk to further enhance oxygen stability, conductivity, and structural stability in low-Co oxides under high voltage and deep discharging operating conditions. This new concept not only will deliver a low-cost, high-energy cathode but also will provide a generic method that can stabilize all high-energy cathodes. The proposed novel 3D doping approach is poised to resolve some longstanding challenges in fundamental doping effects on battery materials as well as to reduce Li-ion batteries’ cost and improve their safety, energy density, and lifetime. To tackle this problem, we have formed a highly complementary multi-university/national labs/industry team to enable a doping-central and systematic investigation of low-Co materials and create a knowledge base for many electrode materials to be used in advanced electric vehicles. The successful execution of the proposed project relies on five components that can be carried out by the complementary team members: (1) a theoretical investigation of the surface and bulk stabilizing dopants (Persson), (2) a precise synthesis of materials with targeted doping (Lin and Xin), (3) development of electrolytes for high-Ni low-Co oxides (Xu), (4) multi-scale characterization of the structures and their interfaces by scanning transmission electron microscopy (SEM) and synchrotron X-ray imaging and spectroscopy tools (Xin and Lin), and (5) pouch cell-level integration (Fan). The UCI-led project will enable a doping-central and systematic investigation of low-Co materials and create a knowledge base for many electrode materials to be used in advanced electric vehicles.

25 ENERGY STORAGE↗
DOE OSTI2023

On the confluence of ultrafast high-temperature sintering and flash sintering phenomena

Ultrafast high-temperature sintering (UHS) and flash sintering are novel methods for rapid sintering of ceramics, often completed in just a few seconds. Here, we show that both also share two additional features: an abrupt rise in electrical conductivity, which is electronic, and electroluminescence. More fundamentally, both are related to phonon physics where MD calculations have shown that proliferation of phonons at the edge of the Brillouin zone can induce Frenkel pairs without the application of electrical fields. Here, we show that, indeed, heating without the application of electric field, can also induce flash: Rapid heating processes of thin films of an oxide-salt deposited on silk fibers, with a propane torch, are shown to induce electronic conductivity, electroluminescence, and rapid sintering of the oxide. Further, the discussion in this article harkens back to two inventions, more than a century ago, which can now be related to flash and UHS: (i) the Nernst glow lamp circa 1900, made from zirconia, and (ii) the Welsbach mantle, constituted from ceria doped thorium oxide, in the late nineteenth century. Thus, the confluence between high heating rate and electric field induced flash phenomena links the past to the new. The emerging question is how injection of phonons that has been shown to create Frenkels can further induce high electronic conductivity and electroluminescence in oxides. Both electronic conductivity and luminescence are likely related to the generation of electron–hole pairs.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Effect of microstructure and composition on the improvement of n-type SiGe/GaP material

Experimental and theoretical work has been conducted at the Jet Propulsion Laboratory to improve the thermoelectric properties of n-type SiGe materials. Particular emphasis has been placed upon the understanding of the differences in dopant solid solubilities when multidoping with both Ga and P instead of P alone, as in standard SiGe alloys. A set of various experimental techniques for obtaining heavily doped hot-pressed samples coupled with thermodynamic theoretical considerations was used to relate microstructure and composition to electrical and thermal transport properties. Application of these results to high-temperature heat treatments of several SiGe/GaP samples achieved substantial improvements of the thermoelectric figure of merit Z, with average values close to 1 x 10-3K-1 over the 600-1000 C temperature range. A set of systematic anneals on heavily doped SiGe/GaP materials is reported in an attempt to consistently reproduce the optimized thermoelectric properties.

Fleurial, Jean-Pierre↗
DOE OSTI2025

Polaron Delocalization and Transport in Doped Graphene Nanoribbon Thin Films

Graphene nanoribbons (GNRs) are quantum-confined π-conjugated monolayer semiconductors with attractive properties for optoelectronic applications. However, the ground- and excited-state properties of charge carriers in GNRs are still poorly understood, particularly with regards to the coupling between charges and the GNR lattice and the degree to which this coupling impacts local and macroscopic charge transport. To address this issue, we systematically correlate carrier density-dependent charge transport with spectroscopic modulations in chemically doped thin films of armchair graphene nanoribbons (9-aGNRs). This study combines Fourier transform infrared (FTIR) and ultraviolet−visible−near-infrared (UV−vis−NIR) spectroscopy with both local and macroscopic conductivity measurements to arrive at a full and self-consistent picture of transport in doped GNR thin films. Using three different molecular p-type dopants (i.e., oxidants), we demonstrate that hole polarons are the dominant quasi-particle determining charge transport in GNRs and that the degree of polaron delocalization depends sensitively on the dopant and the hole density. For all three dopants, the local conductivity probed by microwave spectroscopy substantially exceeds the long-range conductivity obtained by four-point probe measurements. Interestingly, the dopant size substantially influences charge transport at high hole densities. We ascribe this effect to different propensities for forming bipolarons with lower mobilities than polarons. Comparison of GNR transport and spectral properties to other prototypical π-conjugated semiconductors (e.g., semiconducting polymers or carbon nanotubes) benchmark the charge transport properties of GNR thin films for optoelectronic devices and applications.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells

State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2024

Multinonmetal-Doped V 2 O 5 Nanocomposites for Lithium-Ion Battery Cathodes

Lithium-ion batteries (LIBs) are critical for portable electronics and electric vehicles, demanding higher energy density to meet increasing energy storage needs. Current commercial cathode materials, such as LiFePO 4 and LiCoO 2 , are limited by a single electron transfer, restricting their energy density. Vanadium pentoxide (V 2 O 5 ) emerges as a promising high-capacity cathode due to its high theoretical capacity of 443 mA h g –1 with three Li storage capacities, significantly surpassing conventional materials. However, the practical application of V 2 O 5 is hindered by a large structural evolution and rapid capacity fading during full lithium intercalation. Here, this study introduces a multinonmetal doping (MNM) strategy to enhance V 2 O 5 cathodes by incorporating all-nonmetal dopants (B, P, and Si) and graphene (G). MNM-V 2 O 5 -G exhibits increased surface oxygen defects, improving charge transfer kinetics and thus enhancing the rate performance and cycling stability. Our results provide valuable insights into the role of surface oxygen defects in stabilizing V 2 O 5 with element doping. This research highlights the potential of multinonmetal doping to improve LIB cathode materials, offering a promising pathway for design of high-energy-density V 2 O 5 cathodes and advancing the development of next-generation energy storage solutions.

25 ENERGY STORAGE↗
DOE OSTI2023

The onset of selective laser flash sintering in undoped and doped lanthanum chromite

Previous studies have shown that selective laser flash sintering (SLFS) can be initiated in dielectrics that exhibit ionic or electronic conduction at high temperature. These materials required high laser powers to reach the temperatures where electrical conduction is sufficient to initiate SLFS. In this study, SLFS in lanthanum chromite (LC), an intrinsic electronic conductor with high conductivity, and lanthanum strontium chromite (LSC), which is doped to further increase electronic conductivity, were investigated with a focus on understanding the initiation mechanisms. Results show that the initiation of SLFS in LC and LSC occurs when electronic charge carriers are activated and flow to the electrode where the current is measured. A combination of carriers produced at the electrode, temperature-activated intrinsic charge carriers, and extrinsic charge carriers present in LSC due to doping are responsible for the facile initiation of SLFS.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Structural and Dynamic Disorder, Not Ionic Trapping, Controls Charge Transport in Highly Doped Conducting Polymers

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Electrically controllable chirality in a nanophotonic interface with a two-dimensional semiconductor

Chiral nanophotonic interfaces enable propagation direction-dependent interactions between guided optical modes and circularly dichroic materials. Electrical tuning of interface chirality would aid active, switchable non-reciprocity in on-chip optoelectronic and photonic circuitry, but remains an outstanding challenge. Here, in this paper, we report electrically controllable chirality in a nanophotonic interface with atomically thin monolayer tungsten diselenide (WSe 2 ). Titanium dioxide waveguides are directly fabricated on the surface of low-disorder, boron nitride-encapsulated WSe 2 . Following integration, photoluminescence from excitonic states into the waveguide can be electrically switched between balanced and directionally biased emission. The operational principle leverages the doping-dependent valley polarization of excitonic states in WSe 2 . Furthermore, the nanophotonic waveguide can function as a near-field source for diffusive exciton fluxes, which display valley and spin polarizations that are inherited from the interface chirality. Our versatile fabrication approach enables the deterministic integration of photonics with van der Waals heterostructures and could provide optical control over their excitonic and charge-carrier behaviour.

42 ENGINEERING↗
DOE OSTI2023

Electrical Analysis of Pulsed Laser Annealed Poly-Si: Ga/SiOx Passivating Contacts

In this contribution, we examine Ga hyper-doped poly-Si/SiOx contacts realized by pulsed laser melting (PLM). Here, we use Ga as a novel p-type dopant and B as a conventional dopant to induce non-equilibrium doping using an excimer laser. We perform simulations to visualize the maximum melt depth profiles within the poly-Si, with a goal of distributing dopants close to the tunneling oxide, but at the same time preserving the passivation. Hall measurements show that sheet resistance for B is lower than Ga due to its higher solid solubility limit in Si. After comparing the Hall active dopant concentration with the chemical concentration obtained by SIMS measurement, we show nearly 100% activation B activation reaching 10^21 cm-3, while only ~20% activation for Ga. Nevertheless, we achieve active doping concentrations of Ga in poly-Si six times higher than its solid solubility limit in Si (~10^19 cm-3). We compare our Hall mobilities with values in the literature for c-Si and show that B mobilities in laser-treated poly-Si are close to that of the literature value for B, while Ga mobilities are lower, possibly due to additional scattering channels within grain boundaries and deformed lattice. We also compare our results on PLM samples with conventional furnace annealed samples, and we show much higher percent activation and mobilities. Previously, we showed a low contact resistivity of 35.5 +/- 2.4 m..omega..cm2. Here, we further confirm this result by scanning spreading resistance microscopy and Kelvin force nanoprobe microscopy. We demonstrate that our poly-Si: Ga/nCz contact exhibits large drift and diffusion currents under normal cell operating voltage, which widens the laser processing window for a good metal/poly-Si/c-Si contact.

high-efficiency solar cells↗
NASA NTRS1978

Properties of GaN grown on sapphire substrates

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

Crouch, R. K.↗
NASA NTRS1999

Effect of Interface Shape and Magnetic Field on the Microstructure of Bulk Ge:Ga

Thermal and compositional gradients induced during the growth process contribute significantly to the development of defects in the solidified boule. Thermal gradients and the solid-liquid interface shape can be greatly effected by ampoule material. Compositional gradients are strongly influenced by interface curvature and convective flow in the liquid. Results of this investigation illustrate the combined influences of interface shape and convective fluid flow. An applied magnetic field was used to reduce the effects of convective fluid flow in the electrically conductive melt during directional solidification. Several 8 mm diameter boules of Ga-doped Ge were grown at different field strengths, up to 5 Tesla, in four different ampoule materials. Compositional profiles indicate mass transfer conditions ranged from completely mixed to diffusion controlled. The influence of convection in the melt on the developing crystal microstructure and defect density was investigated as a function of field strength and ampoule material. Chemical etching and electron backscattered electron diffraction were used to map the crystal structure of each boule along the center plane. Dislocation etch pit densities were measured for each boule. Results show the influence of magnetic field strength and ampoule material on overall crystal quality.

Cobb, S. D.↗
NASA NTRS2007

Array of Bolometers for Submillimeter- Wavelength Operation

A feed-horn-coupled monolithic array of micromesh bolometers is undergoing development for use in a photometric camera. The array is designed for conducting astrophysical observations in a wavelength band centered at 350 m. The bolometers are improved versions of previously developed bolometers comprising metalized Si3N4 micromesh radiation absorbers coupled with neutron- transmutation-doped Ge thermistors. Incident radiation heats the absorbers above a base temperature, changing the electrical resistance of each thermistor. In the present array of improved bolometers (see figure), the thermistors are attached to the micromesh absorbers by indium bump bonds and are addressed by use of lithographed, vapor-deposited electrical leads. This architecture reduces the heat capacity and minimizes the thermal conductivity to 1/20 and 1/300, respectively, of earlier versions of these detectors, with consequent improvement in sensitivity and speed of response. The micromesh bolometers, intended to operate under an optical background set by thermal emission from an ambient-temperature space-borne telescope, are designed such that the random arrival of photons ("photon noise") dominates the noise sources arising from the detector and readout electronics. The micromesh is designed to be a highly thermally and optically efficient absorber with a limiting response time of about 100 s. The absorber and thermistor heat capacity are minimized in order to give rapid speed of response. Due to the minimization of the absorber volume, the dominant source of heat capacity arises from the thermistor.

Bock, James↗
NASA NTRS2014

High Sensitivity Stress Sensor Based on Hybrid Materials

A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.

Cao, Xian-An↗
DOE OSTI2019

Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Lin, T. L.↗
NASA NTRS1989

Alternating gradient photodetector

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Overhauser, Albert W.↗