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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Prospective memory in dynamic environments: effects of load, delay, and phonological rehearsal

A new paradigm was developed to examine prospective memory performance in a visual-spatial task that resembles some aspects of the work of air traffic controllers. Two experiments examined the role of workload (number of aeroplanes that participants directed), delay (between receipt of prospective instructions and execution), and phonological rehearsal. High workload increased prospective memory errors but increasing delay from 1-3 or 5 minutes had no effect. Shadowing aurally presented text reduced prospective memory performance, presumably because it prevented verbal rehearsal of the prospective instructions. However, performance on the foreground task of directing aeroplanes to routine destinations was affected only by workload and not by opportunity for rehearsal. Our results suggest that ability to maintain performance on a routine foreground task while performing a secondary task--perhaps analogous to conversation--does not predict ability to retrieve a prospective intention to deviate from the routine.

Aerospace Medicine↗
DOE OSTI2014

Nanometer-scale temperature imaging for independent observation of Joule and Peltier effects in phase change memory devices

This paper reports a technique for independent observation of nanometer-scale Joule heating and thermoelectric effects, using atomic force microscopy (AFM) based measurements of nanometer-scale temperature fields. When electrical current flows through nanoscale devices and contacts the temperature distribution is governed by both Joule and thermoelectric effects. When the device is driven by an electrical current that is both periodic and bipolar, the temperature rise due to the Joule effect is at a different harmonic than the temperature rise due to the Peltier effect. An AFM tip scanning over the device can simultaneously measure all of the relevant harmonic responses, such that the Joule effect and the Peltier effect can be independently measured. Here we demonstrate the efficacy of the technique by measuring Joule and Peltier effects in phase change memory devices. By comparing the observed temperature responses of these working devices, we measure the device thermopower, which is in the range of 30 ± 3 to 250 ± 10 μV K{sup −1}. This technique could facilitate improved measurements of thermoelectric phenomena and properties at the nanometer-scale.

42 ENGINEERING↗
DOE OSTI2018

Effect of Plane Strain Compression and Subsequent Recrystallization Annealing on Microstructures and Phase Transformation of NiTiFe Shape Memory Alloy

The effect of plane strain compression and subsequent recrystallization annealing on microstructures and phase transformation of NiTiFe shape memory alloy (SMA) is investigated. Inhomogeneous plastic deformation at various deformation degrees occurs in NiTiFe SMA during plane strain compression. Nanocrystalline phase and amorphous phase increase as the deformation degree increases. B2 austenite, B19′ martensite, nanocrystalline and amorphous phases coexist in the NiTiFe samples subjected to large plastic strain. The static recrystallization mechanisms depend on the microstructures of the deformed NiTiFe samples. The static recrystallization mechanisms deal with nucleation and growth of the recrystallized grains, growth of nanocrystalline phase and crystallization of amorphous phase. Grain size, subgrain boundaries, geometrically necessary dislocation density and Schmid factor are captured on the basis of electron backscattered diffraction data. The process of recrystallization annealing cannot eliminate the deformation texture completely. The slip direction [110] is the most favorable slip direction in the recrystallized NiTiFe sample. Plane strain compression along with subsequent recrystallization annealing changes the phase transformation path of as-rolled NiTiFe SMA, and it results in the decreasing martensite transformation start temperature. The three annealed NiTiFe samples exhibit the similar phase transformation behavior since complete recrystallization annealing leads to the similar microstructures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Phenomenological Modeling of Magnetocaloric Effect for Ni{sub 58}Fe{sub 26}Ga{sub 28} Alloy

The magnetocaloric effect (MCE) of shape memory Ni{sub 58}Fe{sub 26}Ga{sub 28} has been investigated. A phenomenological model is used for simulation of magnetization dependence on temperature variation to investigate magnetocaloric properties such as magnetic entropy change and heat capacity change. The results indicate the potential of Ni{sub 58}Fe{sub 26}Ga{sub 28} alloy to achieve the MCE at temperatures near Curie temperature. This alloy presents a good-looking approach for cooling applications in its prospective candidate for a cooling system in a wide temperature interval including room temperature. The results also confirmed that the phenomenological model is useful for prediction of the MCE for magnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Martensitic fcc-hcp transformation pathway in solid krypton and xenon and its effect on their equations of state

The martensitic transformation is a fundamental physical phenomenon at the origin of important industrial applications. However, the underlying microscopic mechanism, which is of critical importance to explain the outstanding mechanical properties of martensitic materials, is still not fully understood. This is because for most martensitic materials the transformation is a fast process that makes in situ studies extremely challenging. Noble solids krypton and xenon undergo a progressive pressure-induced face-centered cubic (fcc) to hexagonal close-packed (hcp) martensitic transition with a very wide coexistence domain. Here, we took advantage of this unique feature to study the detailed transformation progress at the atomic level by employing in situ x-ray diffraction and absorption spectroscopy. We evidenced a four-stage pathway and suggest that the lattice mismatch between the fcc and hcp forms plays a key role in the generation of strain. We also determined precisely the effect of the transformation on the compression behavior of these materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2018

Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect

A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

Li, Yue↗
DOE OSTI2018

Endogenous amyloid-β mediates memory forgetting in the normal brain

Highlights: • Injection of anti-Aβ antibody into the ventricles prolonged object recognition memory. • It was also effective when injected after memory consolidation. • Genetic deletion of FcγRIIb, an Aβ receptor, prolonged object recognition memory. Amyloid beta (Aβ) is known to be one of the strong candidate molecules for initiating Alzheimer's disease and has been extensively studied in the light of disease pathophysiology. However, it is still elusive what roles Aβ play in the normal brain. In this study, we report that Aβ is required for memory forgetting in the normal brain. We monitored object recognition memory, and in order to quench soluble Aβ, we microinjected anti-Aβ antibody (4G8) into the ventricles after memory acquisition. Microinjection of anti-Aβ antibody prolonged the maintenance of object recognition memory. This effect appeared not to be due to modulation of memory consolidation since antibody injection after memory consolidation still had a similar effect on memory maintenance. Furthermore, the maintenance of object recognition memory was prolonged in Fcgr2b KO mice, which lacks IgG Fcγ receptor II-b (FcγRIIb), a receptor for soluble Aβ oligomers. Taken together, these findings suggest that endogenous Aβ is involved in memory forgetting in the normal brain.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Magnetic and magneto-transport studies of substrate effect on the martensitic transformation in a NiMnIn shape memory alloy

The effect of substrates on the magnetic and transport properties of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} ultra-thin films were studied theoretically and experimentally. High quality 8-nm films were grown by laser-assisted molecular beam epitaxy deposition. Magneto-transport measurements revealed that the films undergo electronic structure transformation similar to those of bulk materials at the martensitic transformation. The temperature of the transformation depends strongly on lattice parameters of the substrate. To explain this behavior, we performed DFT calculations on the system and found that different substrates change the relative stability of the ferromagnetic (FM) austenite and ferrimagnetic (FiM) martensite states. We conclude that the energy difference between the FM austenite and FiM martensite states in Ni{sub 2}Mn{sub 1.5}In{sub 0.5} films grown on MgO (001) substrates is ΔE = 0.20 eV per NiMnIn f.u, somewhat lower compared to ΔE = 0.24 eV in the bulk material with the same lattice parameters. When the lattice parameters of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} film have values close to those of the MgO substrate, the energy difference becomes ΔE = 0.08 eV per NiMnIn f.u. These results suggest the possibility to control the martensitic transition in thin films through substrate engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2001

Space Radiation Effects in Advanced Flash Memories

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

Johnston, A. H.↗
DOE OSTI2018

Performance Assessment of Emerging Memories Through FPGA Emulation

Emerging memory technologies offer the prospect of large capacity, high bandwidth, and a range of access latencies ranging from DRAM-like to SSD-like. In this paper, we evaluate the performance of parallel applications on CPUs whose main memories sweep a wide range of latencies within a bandwidth cap. We use an FPGA emulator, the logic in memory emulator (LiME) to accelerate evaluation. The LiME framework uses a multiprocessor system on chip (MPSoC) combining multicore CPU, integrated memory controller, and FPGA fabric, and enables emulation orders of magnitude faster than software simulation. This work highlights the performance impact of higher latency on concurrent applications and identifies conditions under which future high latency memories can effectively be used as main memory.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Models for Total-Dose Radiation Effects in Non-Volatile Memory

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

On the elastocaloric effect in CuAlBe shape memory alloys: A quantitative phase-field modeling approach

We report the reversible stress-induced phase transformation in shape memory alloys (SMAs) is a dissipative process during which heat is absorbed or released. The inherent temperature variations inside the material has an elastocaloric effect (eCE) with appealing applications in solid-state cooling technology such as compact and efficient on-board refrigeration system for eletronic devices. In this manuscript, we conduct the first study of eCE of CuAlBe SMAs utilizing phase-field modeling. For an applied stress of 500 MPa, the results for polycrystalline Cu-Al11-2Be (at. %) show a minimum adiabatic unloading temperature change of -10 K over a pseudoelastic window of 40 K. In the absence of plastic deformation, the material demonstrates good reproducibility of the eCE over a few loading–unloading cycles. The presence of plastic deformation is found to cause functional fatigue that deteriorates the cooling capacity; however, the coefficient of performance only decreases from 9.04 to 8.03, which is still a very good value. These results place CuAlBe as a frontrunner SMA for solid-state cooling compared to the expensive NiTi.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.

Liu, Yidong↗
DOE OSTI2015

Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10{sup 4}. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of different stages of deformation on the microstructure evolution of Ti-rich NiTi shape memory alloy

The main objective of this work was to investigate the thermomechanical behavior and microstructural changes of a Ti-rich NiTi shape memory alloy (SMA). The microstructural and texture evolution of aged NiTi alloy at different degrees of deformation were elicited by transmission electron microscopy (TEM). An effort was made to correlate results obtained from the tensile test with results from microstructure studies. The undeformed sample reveals a self-accommodated morphology with straight and well defined twin boundaries. At different stages of deformation, diverse mechanisms were involved. These mechanisms include marstraining, detwinning accompanied by dislocation movement, and finally, severe plastic deformation, subdivision and amorphization of the matrix. Under increasing strains, high density lattice defects were generated and the morphology of B19’ became disordered. - Graphical abstract: The summary of microstructure changes of the martensite twins during tensile deformation in polycrystalline NiTi SMAs. - Highlights: • Initial elastic response, dislocation avalanche and deformation bands were studied. • < 011 > Type II twin accompanied by detwinned area after 2% cold work was observed. • Visible parallel fine stacking faults showed plastic flow of the material. • At higher strains, subgrains changed to recrystallized, finely amorphous structure.

36 MATERIALS SCIENCE↗