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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This presentation provides an overview of recent wide bandgap device radiation hardness assurance activities at NASA and via NASA-funded grant vehicles. Devices include enhancement mode power GaN HEMTs, RF GaN HEMTs, and SiC MOSFETs and JBS diodes.
Emerging operations involving Advanced Air Mobility (AAM), such as Urban Air Mobility (UAM), pose a challenge to safety assurance and to accessibility within the National Airspace System (NAS).In particular, the public has a low tolerance for risk in aviation and the current NAS tends to be labor-intensive with limited ability to scale up for UAM. In response to this landscape, NASA is collaborating with industry to define a Concept of Operations (ConOps) for In-time System-Wide Safety Assurance (ISSA) for scalable UAM involving a service-oriented architecture. This architecture focuses safety investments for technological solutions that can overcome safety related barriers for emerging operations. By working with industry, consensus can be reached on desirable system traits that are based on integration and fusion of data and leverage increasingly autonomous and automated systems. These complex systems can identify anomalies, precursors, and trends that together enable more proactive management of operational risks. AAM and UAM elevate the need for risk management in relation to increasing density and heterogeneity of vehicles and operations. Whereas safety in today’s NAS is built on a history of programs and technologies that react to incidents and accidents, AAM presents an opportunity to leverage that experience and its implications and proactively integrate safety into the earliest designs of vehicles and systems. In a perfect world AAM and UAM would not be inherently dangerous but until then ensuring the highest quality of safety requirements is the bridge to mitigating risks.
To provide delay corrections to single frequency users, wide area differential GPS systems depend upon accurate determination of ionospheric total electron content (TEC).
The Federal Aviation Administration's wide-area augmentation system (WAAS) for GPS positioning requires near real-time calibration of ionospheric vertical delays at a set of Earth-fixed grid points.
The Wide-Field Infrared Explorer (WIRE) spacecraft was launched into sunsynchronous orbit on March 4, 1999.
A powerful technique to compute precise GPS satellite orbits for the FAA Wide-Area Augmentation System (WAAS) has been evaluated. This dynamical technique estimates GPS satellite states from a long history of measurements not only yields accurate orbit solutions, but it enables separation of orbit and satellite clock errors and yields orbit accuracies of better than one meter within the service volume, as compared to the JPL precise ephemerides.
An active wide-band fiber optic frequency distribution system employing a thermally controlled phase compensator to stabilize phase variations induced by environmental temperature changes is described.
Natural Phenomena Hazards of the INL that are used to make the INL/BEA site wide safety case for nuclear facilities is presented for Canadian National Laboratory counterparts.
The characterization of liquid hydrogen (LH2) releases has been identified as an international research priority to expand the safe use of hydrogen as an energy carrier. Empirical field measurements such as those afforded by Hydrogen Wide Area Monitoring (HyWAM) can elucidate the behavior of LH2 releases, which can then be used to support and validate dispersion models. HyWAM can be defined as the quantitative three-dimensional spatial and temporal profiling of planned or unintentional hydrogen releases. The NREL Sensor Laboratory developed a HyWAM based upon a distributed array of hydrogen Sensors. The NREL Sensor Laboratory and Health and Safety Executive (HSE) formally committed to collaborate on profiling GH2 and LH2 releases, which allowed for the integration of the NREL HyWAM into the HSE LH2 release behavior investigation supported by the FCH JU Prenormative Research for the Safe Use of Liquid Hydrogen (PRESLHY) program. A HyWAM system consisting of 32 hydrogen measurement points and co-located temperature sensors were distributed downstream of the LH2 release apparatus developed by HSE. In addition, there were proximal wind and weather monitors. In a separate presentation at this conference "HSE SD Experimental Summary for the Characterisation, Dispersion and Electrostatic Hazards of LH2 for the PRESLHY Project" HSE researchers summarize the experimental apparatus and experimental protocols utilized in the HSE LH2 releases that were performed under the auspices of PRESLHY. To supplement the HSE presentation, this presentation will focus on the spatial and temporal behavior LH2 releases as measured by the NREL HyWAM. Correlations to ambient conditions, such as wind speed and direction, plume temperature and hydrogen concentrations will be discussed in addition to the design and performance of the NREL HyWAM, and its potential for improving hydrogen facility safety.
Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.
Abstract In the field of non‐fullerene organic solar cells (OSCs), compared to the rapid development of non‐fullerene acceptors, the progress of high‐performance donor polymers is relatively slow. The property and performance of donor polymers in OSCs are often sensitive to the molecular weight of the polymers. In this study, a chlorinated donor polymer named D18‐Cl is reported, which can achieve high performance with a wide range of polymer molecular weight. The devices based on D18‐Cl show a higher open‐circuit voltage ( V OC ) due to the slightly deeper energy levels and an outstanding short‐circuit current density ( J SC ) owing to the appropriate long periods of blend films and less ([6,6]‐phenyl‐C71‐butyric acid methyl ester) (PC 71 BM) in mixed domains, leading to the higher efficiency of 17.97% than those of the D18‐based devices (17.21%). Meanwhile, D18‐Cl can achieve high efficiencies (17.30–17.97%) when its number‐averaged molecular weight ( M n ) is ranged from 45 to 72 kDa. In contrast, the D18‐based devices only exhibit relatively high efficiencies in a narrow M n range of ≈70 kDa. Such property and performance make D18‐Cl a promising donor polymer for scale‐up and low‐cost production.
Two-dimensional (2D) hybrid halide perovskites with the formula (A') 2 (A) n-1 Pb n I 3n+1 have remarkable stability and promising efficiency in photovoltaic and optoelectronic devices, yet fundamental understanding of film formation, key to optimizing these devices, is lacking. In this study, in-situ grazing-incidence wide-angle X-ray scattering (GIWAXS) is used to monitor film formation during spin-coating. This elucidates the general film formation mechanism of 2D halide perovskites during one-step spin-coating. There are three stages of film formation: sol-gel, oriented 3D, and 2D. Three precursor phases form during the sol-gel stage and transform to perovskite, first giving a highly oriented 3D-like phase at the air/liquid interface followed by subsequent nucleations forming slightly less oriented 2D perovskite. Furthermore, heating before crystallization leads to fewer nucleations and faster removal of the precursors, improving orientation. This outlines the primary causes of phase distribution and perpendicular orientation in 2D perovskite films and paves the way for rationally designed film fabrication techniques.
Heterogeneous integration of microelectronic components provides a pathway to improve circuit/component performance; however, this comes with assembly challenges, in particular due to complex interfaces via subsurface bump bonds. The ability of these bonds to transmit electrical signals and conduct heat to the carrier substrate limits component performance. In this work, hyperspectral frequency‐domain thermoreflectance (FDTR) imaging is demonstrated as a robust technique for evaluating the quality of subsurface indium bump bonds in a surrogate microelectronic sample. By performing microscale FDTR imaging with coarse motion image stitching, thermal phase maps that cover a 4 mm by 4 mm field‐of‐view with subsurface feature sensitivity at depths greater than 50 µm are obtained. The resulting FDTR hyperspectral data contains more than three million pixels and reveal the quality of subsurface microbump arrays. Wide‐field analysis of bonded versus gap regions is enabled by deep neural network feature reconstruction, that after training, rapidly provides an interpretable representation of bond quality. Utility of noisy higher frequency FDTR phase maps, i.e., near the computationally predicted sensing depth limit, results in an average prediction error of 11%. Taken together, FDTR with neural network‐based analysis demonstrates subsurface bond monitoring at length scales relevant for heterogeneously integrated microelectronics.
Abstract Computers, televisions, and smartphones are revolutionized by the invention of InGaN blue light-emitting diode (LED) backlighting. Yet, continual exposure to the intense blue LED emission from these modern displays can cause insomnia and mood disorders. Developing “human-centric” backlighting that uses a violet-emitting LED chip and a trichromatic phosphor mixture to generate color images is one approach that addresses this problem. The challenge is finding a blue-emitting phosphor that possesses a sufficiently small Stokes’ shift to efficiently down-convert violet LED light and produce a narrow blue emission. This work reports a new oxynitride phosphor that meets this demand. K 3 AlP 3 O 9 N:Eu 2+ exhibits an unexpectedly narrow (45 nm, 2206 cm -1 ), thermally robust, and efficient blue photoluminescence upon violet excitation. Computational modeling and temperature-dependent optical property measurements reveal that the narrow emission arises from a rare combination of preferential excitation and site-selective quenching. The resulting chromaticity coordinates of K 3 AlP 3 O 9 N:Eu 2+ lie closer to the vertex of the Rec. 2020 than a blue LED chip and provides access to ≈10% more colors than a commercial tablet when combined with commercial red- and green-emitting phosphors. Alongside the wide gamut, tuning the emission from the violet LED and phosphor blend can reduce blue light emissions to produce next-generation, human-centric displays.
Abstract A major challenge in the pursuit of higher‐energy‐density lithium batteries for carbon‐neutral‐mobility is electrolyte compatibility with a lithium metal electrode. This study demonstrates the robust and stable nature of a closo ‐borate based gel polymer electrolyte (GPE), which enables outstanding electrochemical stability and capacity retention upon extensive cycling. The GPE developed herein has an ionic conductivity of 7.3 × 10 −4 S cm −2 at room temperature and stability over a wide temperature range from −35 to 80 °C with a high lithium transference number ( = 0.51). Multinuclear nuclear magnetic resonance and Fourier transform infrared are used to understand the solvation environment and interaction between the GPE components. Density functional theory calculations are leveraged to gain additional insight into the coordination environment and support spectroscopic interpretations. The GPE is also established to be a suitable electrolyte for extended cycling with four different active electrode materials when paired with a lithium metal electrode. The GPE can also be incorporated into a flexible battery that is capable of being cut and still functional. The incorporation of a closo ‐borate into a gel polymer matrix represents a new direction for enhancing the electrochemical and physical properties of this class of materials.
Abstract Ultra‐wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, B x Al 1− x N, are much less studied despite their ability to offer tunable properties by adjusting x . In this article, the electronic properties of 17 recently predicted ground states of B x Al 1− x N in the x = 0 − 1 range are predicted using first‐principles density functional theory and many‐body perturbation theory within GW approximation. All the B x Al 1− x N structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite‐phase ( w ) AlN (6.19 eV) to that of w ‐BN (7.47 eV). The bandstructures of B x Al 1− x N show that a direct‐to‐indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that B x Al 1− x N alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ 0 or BN = 7.3 ɛ 0 ), with values reaching as high as 12.1 ɛ 0 . These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm −1 with a linear dependence on x . This work provides the much needed advancement in the understanding of the properties of B x Al 1− x N to aid their application in next‐generation devices.
Understanding the behavior of lithium-ion batteries (LIBs) under extreme conditions, for example, low temperature, is key to broad adoption of LIBs in various application scenarios. LIBs, poor performance at low temperatures is often attributed to the inferior lithium-ion transport in the electrolyte, which has motivated new electrolyte development as well as the battery preheating approach that is popular in electric vehicles. A significant irrevocable capacity loss, however, is not resolved by these measures nor well understood. Herein, multiphase, multiscale chemomechanical behaviors in composite LiNi x Mn y Co z O 2 (NMC, x + y + z = 1) cathodes at extremely low temperatures are systematically elucidated. The low-temperature storage of LIBs can result in irreversible structural damage in active electrodes, which can negatively impact the subsequent battery cycling performance at ambient temperature. Furthermore, beside developing electrolytes that have stable performance, designing batteries for use in a wide temperature range also calls for the development of electrode components that are structurally and morphologically robust when the cell is switched between different temperatures.
Conducting polymers are of interest for a broad range of applications from bioelectronics to thermoelectrics. The factors that govern their complex charge transport physics include the structural disorder present in these highly doped polymer films and the Coulombic interactions between the electronic charge carriers and the dopant counterions. Previous studies have shown that at low doping levels carriers are strongly trapped in the vicinity of the counterions, while at high doping levels charge transport is not limited by Coulombic trapping, which manifests itself in the conductivity being independent of the size of the dopant counterion. Here a recently developed ion exchange doping method is used to investigate the ion size dependence of a semicrystalline polythiophene–based model system across a wide range of conductivities. It is found that the regime in which the charge and thermoelectric transport is not or only weakly dependent on ion size, extends to surprisingly low conductivities. This surprising observation is explained by a heterogeneous doping that involves doping of the amorphous domains to high doping levels first before doping of the ordered, crystalline domains occurs. The study provides new insights into how the thermoelectric physics of conducting polymers evolves as a function of doping level.