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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1999

Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

Nguyen, Hung D.↗

NASA NTRS2008

Intelligent Memory Module Overcomes Harsh Environments

Solar cells, integrated circuits, and sensors are essential to manned and unmanned space flight and exploration, but such systems are highly susceptible to damage from radiation. Especially problematic, the Van Allen radiation belts encircle Earth in concentric radioactive tori at distances from about 6,300 to 38,000 km, though the inner radiation belt can dip as low as 700 km, posing a severe hazard to craft and humans leaving Earth s atmosphere. To avoid this radiation, the International Space Station and space shuttles orbit at altitudes between 275 and 460 km, below the belts range, and Apollo astronauts skirted the edge of the belts to minimize exposure, passing swiftly through thinner sections of the belts and thereby avoiding significant side effects. This radiation can, however, prove detrimental to improperly protected electronics on satellites that spend the majority of their service life in the harsh environment of the belts. Compact, high-performance electronics that can withstand extreme environmental and radiation stress are thus critical to future space missions. Increasing miniaturization of electronics addresses the need for lighter weight in launch payloads, as launch costs put weight at a premium. Likewise, improved memory technologies have reduced size, cost, mass, power demand, and system complexity, and improved high-bandwidth communication to meet the data volume needs of the next-generation high-resolution sensors. This very miniaturization, however, has exacerbated system susceptibility to radiation, as the charge of ions may meet or exceed that of circuitry, overwhelming the circuit and disrupting operation of a satellite. The Hubble Space Telescope, for example, must turn off its sensors when passing through intense radiation to maintain reliable operation. To address the need for improved data quality, additional capacity for raw and processed data, ever-increasing resolution, and radiation tolerance, NASA spurred the development of the Radiation Tolerant Intelligent Memory Stack (RTIMS).

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NASA NTRS2012

Experimental Investigation of a Direct-drive Hall Thruster and Solar Array System at Power Levels up to 10 kW

As NASA considers future exploration missions, high-power solar-electric propulsion (SEP) plays a prominent role in achieving many mission goals. Studies of high-power SEP systems (i.e. tens to hundreds of kilowatts) suggest that significant mass savings may be realized by implementing a direct-drive power system, so NASA recently established the National Direct-Drive Testbed to examine technical issues identified by previous investigations. The testbed includes a 12-kW solar array and power control station designed to power single and multiple Hall thrusters over a wide range of voltages and currents. In this paper, single Hall thruster operation directly from solar array output at discharge voltages of 200 to 450 V and discharge powers of 1 to 10 kW is reported. Hall thruster control and operation is shown to be simple and no different than for operation on conventional power supplies. Thruster and power system electrical oscillations were investigated over a large range of operating conditions and with different filter capacitances. Thruster oscillations were the same as for conventional power supplies, did not adversely affect solar array operation, and were independent of filter capacitance from 8 to 80 ?F. Solar array current and voltage oscillations were very small compared to their mean values and showed a modest dependence on capacitor size. No instabilities or anomalous behavior were observed in the thruster or power system at any operating condition investigated, including near and at the array peak power point. Thruster startup using the anode propellant flow as the power 'switch' was shown to be simple and reliable with system transients mitigated by the proper selection of filter capacitance size. Shutdown via cutoff of propellant flow was also demonstrated. A simple electrical circuit model was developed and is shown to have good agreement with the experimental data.

Snyder, John S.↗

NASA NTRS1995

Enhanced Low Dose Rate Effects in Bipolar Circuits: A New Hardness Assurance Problem for NASA

Many bipolar integrated circuits are much more susceptible to ionizing radiation at low dose rates than they are at high dose rates typically used for radiation parts testing. Since the low dose rate is equivalent to that seen in space, the standard lab test no longer can be considered conservative and has caused the Air Force to issue an alert. Although a reliable radiation hardness assurance test has not yet been designed, possible mechanisms for low dose rate enhancement and hardness assurance tests are discussed.

bipolar integrated circuits↗

NASA NTRS2011

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Scardelletti, Maximilian C.↗

NASA NTRS2004

Multisensor Arrays for Greater Reliability and Accuracy

Arrays of multiple, nominally identical sensors with sensor-output-processing electronic hardware and software are being developed in order to obtain accuracy, reliability, and lifetime greater than those of single sensors. The conceptual basis of this development lies in the statistical behavior of multiple sensors and a multisensor-array (MSA) algorithm that exploits that behavior. In addition, advances in microelectromechanical systems (MEMS) and integrated circuits are exploited. A typical sensor unit according to this concept includes multiple MEMS sensors and sensor-readout circuitry fabricated together on a single chip and packaged compactly with a microprocessor that performs several functions, including execution of the MSA algorithm. In the MSA algorithm, the readings from all the sensors in an array at a given instant of time are compared and the reliability of each sensor is quantified. This comparison of readings and quantification of reliabilities involves the calculation of the ratio between every sensor reading and every other sensor reading, plus calculation of the sum of all such ratios. Then one output reading for the given instant of time is computed as a weighted average of the readings of all the sensors. In this computation, the weight for each sensor is the aforementioned value used to quantify its reliability. In an optional variant of the MSA algorithm that can be implemented easily, a running sum of the reliability value for each sensor at previous time steps as well as at the present time step is used as the weight of the sensor in calculating the weighted average at the present time step. In this variant, the weight of a sensor that continually fails gradually decreases, so that eventually, its influence over the output reading becomes minimal: In effect, the sensor system "learns" which sensors to trust and which not to trust. The MSA algorithm incorporates a criterion for deciding whether there remain enough sensor readings that approximate each other sufficiently closely to constitute a majority for the purpose of quantifying reliability. This criterion is, simply, that if there do not exist at least three sensors having weights greater than a prescribed minimum acceptable value, then the array as a whole is deemed to have failed.

Immer, Christopher↗

NASA NTRS1975

Three types of solid state remote power controllers

Three types of solid state Remote Power Controller (RPC) circuits for 120 Vdc spacecraft distribution systems have been developed and evaluated. Both current limiting and noncurrent limiting modes of overload protection were developed and were demonstrated to be feasible. A second generation of circuits was developed which offers comparable performance with substantially less cost and complexity. Electrical efficiency for both generations is 98.5 to 99%. This paper describes various aspects of the circuit design, trade-off studies, and experimental test results. Comparisons of design parameters, component requirements, and engineering model evaluations will emphasize the high efficiency and reliability of the designs.

Baker, D. E.↗

NASA NTRS1982

Cost effective development of a Shuttle-based astronomical instrument control system

The high level language FORTH is used for the electronic control of the Space Shuttle-based Ultraviolet Imaging Telescope, in a flight computer system which minimizes costs. The greater part of the breadboard version of the flight computer is assembled from commercially available components, reducing novel circuit design features and permitting simultaneous development of both hardware and software. The commercial boards are then refabricated on aluminum core heat conducting stock, using high reliability parts to produce the flight versions of the system. The system's ground support equipment employs a MINC-25 minicomputer which performs such functions as flight computer software development, PROM programming, test and integration support, and flight operations support. The implementation of these concepts in flight computer telescope controls is described.

Parise, R. A.↗

NASA NTRS1985

High-Frequency, High-Power Capacitor

Capacitor increases efficiency of high-frequency circuits. High-powercapacitor design uses split foil and floating foil plus multiple coils to reduce voltage drop across film and increases lifetime (10 years). Capacitor reliably operates at high frequency in environments normally not hospitable to electronic components.

White, C. W.↗

NASA NTRS1983

Practical preventive reliability using matrix forms

This paper describes a practical new tool to improve the reliability of equipment. It uses a matrix form to help monitor anticipated component faults precisely. The tool provides the practical measures necessary to generate matrix tables that accurately display all causes of failure and all planned programmatic analyses, tests, processes, and inspections. When completed, the matrix tables give users in-depth visibility of the degree of protection against component failure that is provided by the program's preventive measure plans. The matrix form is an excellent technique for tracking, and thereby influencing, the reliability of nonelectronic spacecraft subsystems or components. No electronic applications have been tried, but the procedure can be useful in the electronics field, e.g., in integrated circuit production planning, and perhaps in process control, inspection or test lines for other electronic components. The drawing of forms, and the recording/manipulation of the data can be computerized.

Johnson, S. A.↗

NASA NTRS2000

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗

NASA NTRS1979

Circuit Connectors

The U-shaped wire devices in the upper photo are Digi-Klipsm; aids to compact packaging of electrical and electronic devices. They serve as connectors linking the circuitry of one circuit board with another in multi-board systems. Digi-Klips were originally developed for Goddard Space Flight Center to meet a need for lightweight, reliable connectors to replace hand-wired connections formerly used in spacecraft. They are made of beryllium copper wire, noted for its excellent conductivity and its spring-like properties, which assure solid electrical contact over a long period of time.

Source record↗

NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗

NASA NTRS2019

Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs

Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to calculate a cumulative density function for the fluence of the environment. The lethal ion method is then used to determine what proportion of the environment will cause single-event-burnout. The operating voltage determines the lowest linear-energy-transfer particle that will cause single-event-burnout and that should be included in the environment distribution. The shielding and mission length also determine the final environment distribution of the mission fluence. Through calculating the reliability for different operating voltages, shielding, and mission length for a specific device, it is shown that shielding thickness and operating voltage have a large effect on reliability and can be traded off during the design.

Heavy ion↗

NASA NTRS1997

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗

NASA NTRS2001

Comparison of the Experimental Performance of Ferroelectric CPW Circuits with Method of Moment Simulations and Conformal Mapping

Experimental measurements of coplanar waveguide (CPW) circuits atop thin films of ferroelectric Ba(x)Sr(1-x)TiO3 (BST) were made as a function bias from 0 to 200 V and frequency from 0.045 to 20 GHz. The resulting phase shifts are compared with method of moments electromagnetic simulations and a conformal mapping analysis to determine the dielectric constant of the BST films. Based on the correlation between the experimental and the modeled data, an analysis of the extent to which the electromagnetic simulators provide reliable values for the dielectric constant of the ferroelectric in these structures has been performed. In addition, to determine how well the modeled data compare with experimental data, the dielectric constant values were also compared to low frequency measurements of interdigitated capacitor circuits on the same films. Results of these comparisons will be presented.

VanKeuls, Fred W.↗

NASA NTRS1987

Deterioration of ZnO/SiO2 diode packages in high humidity

A case study is reported in which the ZnO/SiO2 glass used to package a power rectifier combined with the design to produce a catastropic corrosion failure of the system. Metallic Zn inclusions, present in the glass, played a critical role in creating a conductive path for corrosion currents. Actual equipment failure was the result of an open circuit trace created by corrosion. It is concluded that the presence of Zn inclusions in the glass of this type of package may result in long-term reliability problems for equipment used in high humidity environments.

Evans, John↗

NASA NTRS1990

256 x 256 PACE-1 PV HgCdTe focal plane arrays for medium and short wavelength infrared applications

The development of two 256 by 256 hybrid HgCdTe focal plane array (FPA) families is described, and their performance is discussed. The hybrid FPAs employ a PV HgCdTe detector array and custom Si CMOS readouts. The PACE-1 process was used to fabricate the detectors, whereby the liquid phase epitaxial growth of HgCdTe occurs on sapphire substrates buffered by a layer of CdTe. The performance characteristics of the detector arrays are given. A tactical 256 by 256 CMOS readout is tested, in which a high functional yield was achieved. Updated test results are given for a 256 by 256 readout circuit developed for use in an orbital replacement instrument for the Hubble Space Telescope. The characterizations of several MWIR and SWIR FPAs were thorough and shown to be reliable. The pixel yield, maximum FPA responsivity nonuniformity, and SWIR FPA read noise for the tests are given. The high contrast and insignificant fixed pattern noise of the imagery from the MWIR 256 by 256 FPA are emphasized. These qualities were obtained when the device was operating at 80 k and utilizing f/2 optics with an 8-in. focal length and a 4.4 micron high pass filter.

Kozlowski, L. J.↗