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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Doping in Efficient Polycrystalline CdSeTe Solar Cells via AsCl 3 Vapor Annealing

Doping in cadmium telluride (CdTe) thin-film solar cells is a critical step in producing highly efficient CdTe solar modules. To date, copper (Cu) ex-situ diffusion doping and group V in situ doping (such as arsenic, As) have been effectively used in manufacturing CdTe solar modules. However, Cu doping is prone to rapid degradation, whereas the low activation ratio of the dopants constrains group V in situ doping. Recently, ex-situ group V doping has been developed, showing an improved doping activation ratio through a solution process. Here, in this study, we developed a vapor-based AsCl 3 doping method for diffusion doping of polycrystalline CdSeTe devices. AsCl 3 vapor annealing can promote the diffusion of As into the bulk CdSeTe through a surface chemical reaction between CdTe and AsCl 3 . This approach has led to a long carrier lifetime of over 72 ns, V oc of 850 mV, and power conversion efficiency of ~18% with Au metal electrodes. The vapor-based ex situ group V doping approach offers an effective means to perform group V diffusion doping into the CdSeTe device.

14 SOLAR ENERGY↗
NASA NTRS2001

Flight Computer Processing Avionics for Space Station Microgravity Experiments: A Risk Assessment of Commercial Off-the-Shelf Utilization

NASA/Marshall Space Flight Center (MSFC) is continually looking for ways to reduce the costs and schedule and minimize the technical risks during the development of microgravity programs. One of the more prominent ways to minimize the cost and schedule is to use off-the-shelf hardware (OTS). However, the use of OTS often increases the risk. This paper addresses relevant factors considered during the selection and utilization of commercial off-the-shelf (COTS) flight computer processing equipment for the control of space station microgravity experiments. The paper will also discuss how to minimize the technical risks when using COTS processing hardware. Two microgravity experiments for which the COTS processing equipment is being evaluated for are the Equiaxed Dendritic Solidification Experiment (EDSE) and the Self-diffusion in Liquid Elements (SDLE) experiment. Since MSFC is the lead center for Microgravity research, EDSE and SDLE processor selection will be closely watched by other experiments that are being designed to meet payload carrier requirements. This includes the payload carriers planned for the International Space Station (ISS). The purpose of EDSE is to continue to investigate microstructural evolution of, and thermal interactions between multiple dendrites growing under diffusion controlled conditions. The purpose of SDLE is to determine accurate self-diffusivity data as a function of temperature for liquid elements selected as representative of class-like structures. In 1999 MSFC initiated a Center Director's Discretionary Fund (CDDF) effort to investigate and determine the optimal commercial data bus architecture that could lead to faster, better, and lower cost data acquisition systems for the control of microgravity experiments. As part of this effort various commercial data acquisition systems were acquired and evaluated. This included equipment with various form factors, (3U, 6U, others) and equipment that utilized various bus structures, (VME, PC104, STD bus). This evaluation of hardware was performed in conjunction with a trade study that considered over twenty (20) different factors relevant to the selection of an optimum design approach. These factors included; safety, sizing and timing, radiation hardness and single event upset, power consumption, heat dissipation, size and volume, expected service life, maintainability, heritage, operating systems, requirements for software reuse, availability of compatible interface boards, relative cost, schedule, reliability, EMI/EMC factors, "hot swap" capability, standards for conduction cooling, I/O capabilities, unique carrier requirements and operating system considerations. The approach to evaluate Safety as part of this study included a review of the Preliminary Hazard Analysis (PHA) for each of the experiment designs and a determination of how each hazard could be addressed and eliminated when different processors were selected. This included evaluating various design approaches and trade-offs between fault tolerant designs and fail-safe designs in accordance with NSTS 1700.7B. This will include the results of radiation testing where available. Various operating systems, such as VxWorks, Linux, QNX, and Embedded NT are evaluated and the advantages and disadvantages of their utilization are also addressed. Design implementation strategies for the various operating systems are considered and discussed. This paper presents the results and recommendations from this trade study. Preliminary conclusions from this study are that safety concerns from lack or radiation testing on COTS equipment can be addressed by additional testing and design considerations, the PC104 bus provided adequate I/O for the SDLE and EDSE microgravity experiments, and PC104 bus components offered significant advantages over VME and cPCI for weight and space reductions.

Estes, Howard↗
NASA NTRS1994

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Weinberg, I.↗
NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
DOE OSTI2023

Sub‐Nanosecond Reconfiguration of Ferroelectric Domains in Bismuth Ferrite

Abstract Domain switching is crucial for achieving desired functions in ferroic materials that are used in various applications. Fast control of domains at sub‐nanosecond timescales remains a challenge despite its potential for high‐speed operation in random‐access memories, photonic, and nanoelectronic devices. Here, ultrafast laser excitation is shown to transiently melt and reconfigure ferroelectric stripe domains in multiferroic bismuth ferrite on a timescale faster than 100 picoseconds. This dynamic behavior is visualized by picosecond‐ and nanometer‐resolved X‐ray diffraction and time‐resolved X‐ray diffuse scattering. The disordering of stripe domains is attributed to the screening of depolarization fields by photogenerated carriers resulting in the formation of charged domain walls, as supported by phase‐field simulations. Furthermore, the recovery of disordered domains exhibits subdiffusive growth on nanosecond timescales, with a non‐equilibrium domain velocity reaching up to 10 m s −1 . These findings present a new approach to image and manipulate ferroelectric domains on sub‐nanosecond timescales, which can be further extended into other complex photoferroic systems to modulate their electronic, optical, and magnetic properties beyond gigahertz frequencies. This approach could pave the way for high‐speed ferroelectric data storage and computing, and, more broadly, defines new approaches for visualizing the non‐equilibrium dynamics of heterogeneous and disordered materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSe x Te 1-x , leading to microsecond charge carrier lifetimes. In undoped Al 2 O 3 -passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm 2 /(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <; 100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding “recombination lifetime” limitation and in the near future will transition to improving other aspects of device design.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Temperature Coefficients of Perovskite Photovoltaics for Energy Yield Calculations

Temperature coefficients for maximum power (TPCE), open circuit voltage (VOC), and short circuit current (JSC) are standard specifications included in data sheets for any commercially available photovoltaic module. To date, there has been little work on determining the TPCE for perovskite photovoltaics (PV). We fabricate perovskite solar cells with a TPCE of -0.08 rel %/°C and then disentangle the temperature-dependent effects of the perovskite absorber, contact layers, and interfaces by comparing different device architectures and using drift-diffusion modeling. A main factor contributing to the small TPCE of perovskites is their low intrinsic carrier concentrations with respect to Si and GaAs, which can be explained by its wider band gap. In this work, we demonstrate that the unique increase in Eg with increasing temperatures seen for perovskites results in a reduction in JSC but positively influences VOC. The current limiting factors for the TPCE in perovskite PV are identified to originate from interfacial effects.

14 SOLAR ENERGY↗
NASA NTRS1982

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗
NASA NTRS1986

Effects of impurities on silicon solar-cell performance

Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

Hopkins, R. H.↗
NASA NTRS1986

Impurity effects in silicon for high efficiency solar cells

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Hopkins, R. H.↗
NASA NTRS1987

The effect of internal stresses on solar cell efficiency

Diffusion induced stresses in silicon are shown to result in large localized changes in the minority carrier mobility which in turn have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses appear to be much more effective in altering cell performance. While most stress related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation.

Weizer, Victor G.↗
NASA NTRS1990

Effect of neutron irradiation on the thermoelectric properties of SiGe alloys

Zone-leveled and hot-pressed n- and p-type Si80Ge20 alloys were irradiated with neutrons to a fluence of 4 x 1018 n/sq cm and to a fluence of 5.4 x 1019 n/sq cm at a temperature of approximately 200-300 C. The effect of neutron irradiation on the thermoelectric properties of these alloys was evaluated. The carrier concentration and mobility (and hence the resistivity) were measured at room temperature while the thermal diffusivity was measured at 177-192 C both before and after the irradiation and after each subsequent 2-h heat treatment at 350 C, 600, and 1000 C. The irradiation increased the resistivity significantly, but the thermal conductivity decreased only by about 10-15 percent. This tends to indicate that the radiation produced only small defects (single pairs and small vacancy chains). The samples all returned to almost exactly their preirradiation state after the 1000 C anneal. This indicates that SiGe alloys can be operated in this neutron fluence at high temperatures without a degradation of thermoelectric properties.

Vandersande, Jan W.↗
NASA NTRS1987

Piezoresistance and solar cell efficiency

Diffusion-induced stresses in silicon are shown to result in large localized changes in the minority-carrier mobility which in turn can have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses in the base appear to be much more effective in altering cell performance than do compressive stresses. While most stress-related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic-induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation.

Weizer, Victor G.↗
DOE OSTI2021

Revealing momentum-dependent electron–phonon and phonon–phonon coupling in complex materials with ultrafast electron diffuse scattering

Abstract Despite their fundamental role in determining many important properties of materials, detailed momentum-dependent information on the strength of electron–phonon and phonon–phonon coupling across the entire Brillouin zone has remained elusive. Ultrafast electron diffuse scattering (UEDS) is a recently developed technique that is making a significant contribution to these questions. Here, we describe both the UEDS methodology and the information content of ultrafast, photoinduced changes in phonon-diffuse scattering from single-crystal materials. We present results obtained from Ni, WSe 2 , and TiSe 2 , materials that are characterized by a complex interplay between electronic (charge, spin) and lattice degrees of freedom. We demonstrate the power of this technique by unraveling carrier–phonon and phonon–phonon interactions in both momentum and time and following nonequilibrium phonon dynamics in detail on ultrafast time scales. By combining ab initio calculations with ultrafast diffuse electron scattering, insights into electronic and magnetic dynamics that impact UEDS indirectly can also be obtained. Graphic Abstract

Dürr, Hermann A. (ORCID:0000000196808730)↗
NASA NTRS1982

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Ho, C.-T.↗
DOE OSTI2022

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V for . However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Origins of anisotropic linear magnetoresistance with isotropic mobility in Cd 3 As 2 films on GaAs$[110]$

Thin film synthesis allows for the potential to orient crystals in different orientations, permitting measurement of orientation-dependent material aspects such as band structures and transport anisotropy. Here, Dirac semimetal Cd 3 As 2 films are epitaxially grown on GaAs$[110]$ substrates, which has a $[001]$ orientation in-plane. Films contain domains of two different c-axis orientations resulting from an aligned a-axis in-plane. Magnetoresistance measurements performed along both $[1\bar{1}0]$ and $[001]$ substrate directions reveal similar mobility and carrier concentration, but much larger magnetoresistance along the $[001]$ direction, which can be explained by the guiding center diffusion model as arising from anisotropic disorder and different atomic spacings.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Disorder recovers the Wiedemann-Franz law in the metallic phase of VO 2

At temperatures higher than 341 K, vanadium dioxide (VO 2 ) is a strongly correlated metal with resistivity exceeding the Mott-Ioffe-Regel limit. Its electronic thermal conductivity is lower than that predicted by the Wiedemann-Franz (WF) law, and can be explained by nonquasiparticle transport where heat and charge currents follow separate diffusive modes. In contradiction, the Wiedemann-Franz law is a direct consequence of quasiparticle transport where charge carriers are elastically scattered. In this work, we enhance elastic electron scattering in VO 2 by introducing atomic disorder with ion irradiation. Furthermore, a gradual and eventually full recovery of the WF law is observed at high defect densities. This observation provides an example that connects hydrodynamic quasiparticle transport to nonquasiparticle transport in metallic systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗