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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Considerations for Corridor and Community DC Fast Charging Complex System Design

The Idaho National Laboratory (INL), a U.S. Department of Energy (DOE) national laboratory located in Idaho Falls, Idaho, has been DOE’s lead laboratory for the field testing of light-duty plug-in electric vehicles (PEVs), charging infrastructure, and other alternative vehicle technologies for 25 years. INL has tested and collected data from more than 17,000 charging stations, documenting efficiencies, charge profiles, and PEV drivers’ behaviors when using charging infrastructure. Based on the experience of INL staff and support personnel, DOE requested that INL perform three tasks: • Identify pertinent lessons learned from previous direct current (DC) fast charger (DCFC) deployment and data collection activities in order to perform an analysis of the experience to date with DC fast charging systems • Establish the criteria for siting DC fast charging systems, including access to current or future sizeable penetrations of PEVs and existing power, the potential to be used by local (intracity) as well as pass-through (intercity) PEV drivers, expandability, and accessible to the federal highway system • Develop a draft system specification that lists the components that will be incorporated in a DC fast charging complexes.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2016

Exchange magnon induced resistance asymmetry in permalloy spin-Hall oscillators

We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping spin-transfer torque, we observe a change in resistance which we ascribe mainly to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Temperature dependent localized surface plasmon resonance properties of supported gold nanoparticles

The well known localized surface plasmon resonance (LSPR) of gold nanoparticles (AuNPs) supported on a dielectric substrate depends on the particle shape, size and type of dielectric material. The particle size and shape mainly vary with the method of preparation and the parameters involved there in. In this report, we show preparation of AuNPs supported on quartz substrate by direct current sputtering followed by thermal annealing at an optimized temperature of 400 °C. The samples were characterized using optical absorption spectra, scanning electron microscopy (SEM) and the energy dispersive x-ray spectrum. The LSPR position could be tuned by varying annealing temperature. The LSPR was found to be blue shifted up to 10 nm with annealing temperature varying from 400 °C to 800 °C. The change in LSPR was ascribed to the morphology of AuNPs over quartz.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{sup −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Breakdown of atmospheric pressure microgaps at high excitation frequencies

Microwave (mw) breakdown of atmospheric pressure microgaps is studied by a one-dimensional Particle-in-Cell Monte Carlo Collisions numerical model. The effect of both field electron emission and secondary electron emission (due to electron impact, ion impact, and primary electron reflection) from surfaces on the breakdown process is considered. For conditions where field emission is the dominant electron emission mechanism from the electrode surfaces, it is found that the breakdown voltage of mw microdischarge coincides with the breakdown voltage of direct-current (dc) microdischarge. When microdischarge properties are controlled by both field and secondary electron emission, breakdown voltage of mw microdischarge exceeds that of dc microdischarge. When microdischarge is controlled only by secondary electron emission, breakdown voltage of mw microdischarge is smaller than that of dc microdischarge. It is shown that if the interelectrode gap exceeds some critical value, mw microdischarge can be ignited only by electrons initially seeded within the gap volume. In addition, the influence of electron reflection and secondary emission due to electron impact is studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures

Germanium, silicon, gallium arsenide, and indium antimonide n-type crystals on the metal side of the insulator–metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Systematic review of biological effects of exposure to static electric fields. Part II: Invertebrates and plants

Highlights: • Environmental impacts of static EF were assessed in invertebrate and plant studies. • Invertebrates are able to perceive the presence of static EF near HVDC power lines. • No evidence for adverse effects on physiological functions at HVDC field levels. • Corona-action appears to cause adverse biological effects at very high field levels. • Methodological flaws in all reviewed studies lowered credibility in the results. The construction of high-voltage direct current (HVDC) lines for the long-distance transport of energy is becoming increasingly popular. This has raised public concern about potential environmental impacts of the static electric fields (EF) produced under and near HVDC power lines. As the second part of a comprehensive literature analysis, the aim of this systematic review was to assess the effects of static EF exposure on biological functions in invertebrates and plants and to provide the basis for an environmental impact assessment of such exposures.

63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗
DOE OSTI2015

Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sup x}:H (0 < x < 2)

Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO{sup 2}) and amorphous (a-SiO{sup x}:H) matrices are reviewed. The effect of radio-fre- quency (RF) and direct-current (dc) discharge modulation on the growth kinetics of ncl-Si is considered. The results of infrared spectroscopy, mass spectrometry, and laser-beam scanning of the plasma composition are analyzed. The behavior of nanoparticles is described depending on their charge and size in plasma under the effect of electric, magnetic, and gravity forces and under the influence of the dynamics of gases contained within the plasma. Infrared spectroscopy data on the a-SiO{sup x}:H film matrix are analyzed. The photoluminescence properties of ncl-Si fabricated using different techniques are described.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Studies on VO{sub x} thin films deposited over Si{sub 3}N{sub 4} coated Si substrates

Vanadium oxide (VO{sub x}) thin films were deposited on to the silicon nitride (Si{sub 3}N{sub 4}) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (T{sub s}). The deposited films were characterized for their structural, morphological, optical and electrical properties. The average grain size of the deposited films was in the range of 95 to 178 nm and the strain varied from 0.071 to 0.054 %. The optical bandgap values of the films were evaluated using UV-Vis spectroscopy and lies in the range of 2.46 to 3.88 eV. The temperature coefficient of resistance (TCR) for the film deposited at 125 °C was -1.23%/°C with the sheet resistivity of 2.7 Ω.cm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Structural, mechanical, and magnetic properties of GaFe{sub 3}N thin films

Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe{sub 3}N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe{sub 3}N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe{sub 3}N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Sustenance of inhomogeneous electron temperature in a magnetized plasma column

This paper presents the equilibrium properties of a magnetized plasma column sustained by direct-current (dc) operated hollow cathode discharge in conjunction with a conducting end-plate, acting as the anode. The survey of radial plasma characteristics, performed in argon plasma, shows hotter plasma in the periphery as compared to the central plasma region; whereas the plasma density peaks at the center. The off-centered peak in radial temperature is attributed due to inhomogeneous power deposition in the discharge volume in conjunction with short-circuiting effect by the conducting end plate. A theoretical model based on particle flux and energy balance is given to explain the observed characteristics of the plasma column.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Effect of electrodeposition temperature on grain orientation and corrosion resistance of nanocrystalline pure nickel

The nanocrystalline pure nickels with different grain orientations were fabricated by direct current electrodeposition process. The grain size slightly decreased with the increasing of electrodeposition solution temperature. However, grain orientation was affected significantly. Comparing with samples obtained at 50 °C and 80 °C, sample obtained at 20 °C had the strongest (111) orientation plane which increased electrochemical corrosion resistance of this sample. At the same time, the lowest (111) orientation plane deteriorated electrochemical corrosion resistance of sample obtained at 50 °C. - Graphical abstract: The increased electrodeposition temperature promoted slightly grain refinement. The grain orientation was affected significantly by electrodeposition solution temperature. The (111) orientation plane of sample increased significantly corrosion resistance. Display Omitted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Empirical analysis of electric vehicle fast charging under cold temperatures

This paper presents an empirical analysis of the effects of temperature on Direct Current Fast Charger (DCFC) charging rate and discusses the impact of such effects on wider adoptions of electric vehicles (EVs). The authors conducted statistical analysis on the effects of temperature and constructed an electric vehicle charging model that can show the dynamics of DCFC charging process under different temperatures. The results indicate that DCFC charging rate can deteriorate considerably in cold temperatures. These findings may be used as a reference to identify and assess the regions that may suffer from slow charging. In conclusion, the problems associated with temperature effects on DCFC charging deserve greater attention as electrification of motor vehicles progresses and DCFC usage increases in the future.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2017

A Generalized Precharging Strategy for Soft Startup Process of the Modular Multilevel Converter-Based HVDC Systems

The modular multilevel converter (MMC) has become one of the most promising converter technologies for medium/high-power applications, specifically for highvoltage direct current (HVDC) transmission systems. One of the technical challenges associated with the operation and control of the MMC-based system is to precharge the submodule (SM) capacitors to their nominal voltage during the startup process. In this paper, considering various SM circuits, a generalized precharging strategy is proposed for the MMC-based systems, which can implement soft stratup from dc or ac side. Furthermore, the proposed precharging strategy can be applicabe for various SM circuits and MMC configurations. The proposed startup strategy does not require extra measurements and/or auxiliary power supplies. The charging current is controlled by adjusting the changing rate of the number of blocked and bypassed SM capacitors. Based on the proposed startup strategy, the startup processes of MMC/MMC-HVDC systems based on various SM circuits are analyzed and a generalized startup procedure for various MMC-HVDC systems is proposed. In addition, the uncontrollable steady-state SM capacitor voltages of various MMC-based systems are analyzed and determined, potentially useful in SM design. Our performance of the proposed strategy for various MMC-HVDC systems is evaluated based on time-domain simulation studies in the PSCAD/EMTDC software environment and experimental results based on a scaled-down prototype.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2015

Electrochemical strain microscopy time spectroscopy: Model and experiment on LiMn{sub 2}O{sub 4}

Electrochemical Strain Microscopy (ESM) can provide useful information on ionic diffusion in solids at the local scale. In this work, a finite element model of ESM measurements was developed and applied to commercial lithium manganese (III,IV) oxide (LiMn{sub 2}O{sub 4}) particles. ESM time spectroscopy was used, where a direct current (DC) voltage pulse locally disturbs the spatial distribution of mobile ions. After the pulse is off, the ions return to equilibrium at a rate which depends on the Li diffusivity in the material. At each stage, Li diffusivity is monitored by measuring the ESM response to a small alternative current (AC) voltage simultaneously applied to the tip. The model separates two different mechanisms, one linked to the response to DC bias and another one related to the AC excitation. It is argued that the second one is not diffusion-driven but is rather a contribution of the sum of several mechanisms with at least one depending on the lithium ion concentration explaining the relaxation process. With proper fitting of this decay, diffusion coefficients of lithium hosts could be extracted. Additionally, the effect of phase transition in LiMn{sub 2}O{sub 4} is taken into account, explaining some experimental observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Considerations for Corridor and Community DC Fast Charging Complex System Design

As auto manufacturers bring vehicles to market with large batteries that provide over 200 miles of driving range, interest in faster charging options for plug-in electric vehicles (PEVs) is intensifying. This report focuses on direct current fast charger (DCFC) systems and how they can be deployed to provide convenient charging for PEV drivers. First, lessons learned from previous DCFC deployment and data collection activities are shared to describe consumer experience with DCFC systems to date. Second, considerations and criteria are established for designing and upgrading DCFC complexes that provide fast-charging opportunities for PEV drivers in urban communities and on rural corridors. Third, cost estimates are shared for hypothetical high-power DCFC complexes that meet simplified design requirements. Finally, results for a business case analysis are presented that shed light on the financial challenges associated with DCFCs.

25 ENERGY STORAGE↗
DOE OSTI2018

Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Platinum, Palladium, Silver, and Yttrium

The dependence of the characteristics of hydrogen sensors based on thin Pt/Pd/SnO{sub 2}:Sb, Ag, Y and Ag/SnO{sub 2}:Sb, Ag, Y films obtained by the method of magnetron sputtering at a direct current on the humidity level of the gas mixture during operation in thermal cyclic mode is investigated. The analysis of the experimental data was carried out using the expressions obtained on the basis of the dissociative adsorption model of hydrogen and water molecules on the SnO{sub 2} surface, taking into account the presence of three types of adsorbed particles: O{sup –}, OH, OН{sup –}. The use of complex modifiers Pt/Pd, Ag on the surface and Ag + Y in the bulk of tin dioxide films allows to reduce the influence of humidity on the characteristics of sensors. The role of these modifying additives in the process of dissociative adsorption of hydrogen molecules on the surface of SnO{sub 2} films in humid environment is established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗